kouyama t mihashi k 1981 fluorimetry study of n 1 pyrenyl iodoacetamide labelled f actin local structural change of actin protomer both on polymerization and on binding of heavy meromyosin european journal of biochemistry 114 33 38
Study of drop on demand inkjet printing technology with application to organic light emitting diodes
Ngày tải lên :
11/09/2015, 10:17
... Basis Function Networks 17 0 6.2 .1 Basic Theory 17 0 6.2.2 Training of Radial Basis Function Networks 17 4 6.3 Normalization of Experimental Data 17 7 6.4 Results and Discussion 18 1 V Table of Contents ... family and close friends for their blessings and moral support to give me courage and patience to face the obstacles in life I Table of Contents TABLE OF CONTENTS ACKNOWLEDGEMENTS TABLE OF CONTENTS ... 6.4 .1 Representation and Mapping of Dried Droplet Profiles 18 2 6.4.2 Evaluation of Generated RBFN Models 18 8 6.5 Conclusion 19 5 CHAPTER CONCLUSIONS AND FUTURE WORK 19 6 7 .1 Conclusions 19 6 7.2 Future...
- 257
- 545
- 0
Design, fabrication, and characterization of a solenoidsystem to generate magnetic field for an ECR proton source
Ngày tải lên :
22/12/2013, 08:58
... environment The successful operation of an ECR source greatly depends on the quality of the magnetic elements and uniformity in the magnetic field (better than G) Imperfections in 466 S K Jain, ... magnetic field lines and thereby shield the adjacent components The use of electromagnet has wide flexibility of tuning the plasma to get the best operating conditions The use of electromagnet (instead ... current of 2·5 mA was extracted, with two-electrode extraction geometry, at 15 keV beam energy Design, fabrication, and characterization of a solenoid system 467 Figure The variation of the magnetic...
- 8
- 650
- 0
fabrication and characterization of anodic titanium oxide nanotube arrays of controlled
Ngày tải lên :
19/03/2014, 16:48
... NH 4F electrolyte in EG at four concentrations to anodize Ti foil with anodization for various durations Figure shows the variation of length of TiO2 NT as a function of period of anodization (the ... According to Grimes and co-workers ,14 ,17 the formation of ATO NT involves fluoride ions: the lengths of these tubes were proportional to the fluoride concentration and to the duration of anodization We ... greatest reported efficiency of NT-DSSC under backside illumination is 6.89% .17 In the present work, we controlled the lengths of ATO NT from to 41 µm while varying the concentration of NH 4F electrolyte...
- 7
- 445
- 0
Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc
Ngày tải lên :
20/06/2014, 23:20
... said that graphene is the most suitable material for a counter electrode, followed by carbon nanocomposites and SWNTs Conclusion In this report, we demonstrated the fabrication of carbon nanomaterials ... of the h and FF of the counter electrodes with three different carbon-based materials measured under similar deposition conditions of optical transmittance showed that graphene is the most suitable ... second circle is related to the TiO2/electrolyte interface As shown in the figure, the resistances (Rct1) between the electrolyte and the graphenes, SWNTs, and carbon nanocomposite counter electrodes...
- 4
- 376
- 0
báo cáo hóa học:" Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" pot
Ngày tải lên :
21/06/2014, 17:20
... said that graphene is the most suitable material for a counter electrode, followed by carbon nanocomposites and SWNTs Conclusion In this report, we demonstrated the fabrication of carbon nanomaterials ... of the h and FF of the counter electrodes with three different carbon-based materials measured under similar deposition conditions of optical transmittance showed that graphene is the most suitable ... second circle is related to the TiO2/electrolyte interface As shown in the figure, the resistances (Rct1) between the electrolyte and the graphenes, SWNTs, and carbon nanocomposite counter electrodes...
- 4
- 361
- 0
báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt
Ngày tải lên :
21/06/2014, 17:20
... results in Table 1, we propose a formation model of the ultra-sharp nanotip array Figure shows the schematic representation of nanotip formation at different etching times The coated PR on top of ... silicon substrate is etched away to form the nanotip The field emission property of the ultra-sharp nanotip is measured, and the turn -on field and work function of the ultra-sharp nanotip was estimated ... illustrates the FN plot of the pyramid-like tip and sharpened nanotip The FN plots show a linear relationship, implying that the quantum tunneling effect is the main mechanism for the FE The extracted...
- 15
- 259
- 0
Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells
Ngày tải lên :
09/09/2015, 11:15
... contact area fractions, and compared to conventional heterojunction silicon wafer solar cells and conventional diffused solar cells for both the front emitter and rear emitter configurations ... cells for both the front emitter and rear emitter configurations, and varying rear contact area fractions from a full-area heterojunction rear contact to point contacts This solar cell architecture ... short-wavelength photons On the other hand, a significant amount of the front optical losses is contributed by the front TCO and the doped silicon films These heterojunction films need to be optimised...
- 182
- 535
- 0
Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors
Ngày tải lên :
10/09/2015, 09:11
... EC is the conduction band offset at the AlxGa1-xN/GaN interface Fig 1. 4 plots the calculated ns of pseudomorphic AlGaN/GaN heterostructure as a function of Al content x of the AlxGa1 xN barrier ... Content x Fig 1. 4 The calculated density of 2-DEG ns of pseudomorphic AlGaN/GaN heterosture as a function of Al content x of the AlxGa1 xN barrier layer [10 ] conduction band edge energy, and ... in situ vacuum anneal and SiH4 treatment achieved current on/ off, Ion/Ioff, ratio of ~ 10 6 and sub-threshold swing S of less than 10 0 mV/decade [78] 17 Chapter demonstrates the integration of a...
- 204
- 436
- 0
Fabrication and characterization of germanium photodetectors
Ngày tải lên :
10/09/2015, 15:47
... diffusion Another advantage of the PIN structure is that the depletion-region thickness (the intrinsic layer) can be tailored to optimize both the quantum efficiency and response bandwidth In ... photodetectors 1. 3 .1 PIN Detectors PN junctions are one of the most commonly used configurations for semiconductor photodetectors The PIN diode with “I” stands for intrinsic, includes an intrinsic ... Ge-PIN photodetectors with Si-waveguide and study the influence of different dimensional parameters on the final 10 performance index of the photodetector (dark current, responsivity and response...
- 132
- 364
- 0
Fabrication and characterization of composite membranes for gas separation
Ngày tải lên :
12/09/2015, 11:24
... Law of mass diffusion Permeability coefficient product of diffusion and absorption coefficients Kayser (18 91) Demonstration of validity of Henry’s Law for the adsorption of carbon dioxide in rubber ... affinity constant (1/ atm) C Local penetrant concentration in the membrane (cm3 (STP)/cm3 (polymer)) CD Penetrant concentration in Henry’s sites (cm3 (STP)/cm3 (polymer)) CH Penetrant concentration ... of gas diffusion (Graham, 18 66a) and found out that the gas transport rate through the membrane did not correlate with the diffusion constant Based on this observation, he concluded that the transport...
- 277
- 406
- 0
Fabrication and characterization of luminescent silicon nanocrystal films
Ngày tải lên :
12/09/2015, 11:25
... photon energy K thermal conductivity n coefficient Rf reflection coefficient R flow ratio [N2 O]/[SiH4] t time T temperature Tr transmittance α absorption coefficient β real incident angle of the ... optical interconnects are investigated as an outstanding solution to the interconnect bottleneck posed by conventional metal lines Furthermore, Si NCs can exhibit large third-order optical non-linearity ... concentration of ~95 at % correspond to the Si substrate Thus, the film thickness is determined to be ~12 0 and 60 nm, respectively The Si concentration is almost constant along the film depth...
- 167
- 349
- 0
Fabrication and characterization of memory devices based on organic polymer materials
Ngày tải lên :
12/09/2015, 11:29
... Ht total density of traps I current Ion on current Ioff off current J current density k Boltzmann constant K stability constant l empirical parameter Nv density of states q elementary charge T ... on the ON state and OFF state 75 Figure 3.9: Ratio of the ON- to OFF-state current as a function of applied voltage 75 Figure 3 .10 : (a) Transient response of current density vs time, showing ... source to the drain and form the ON current (Ion) 1. 1 MOSFET and Moore’s Law Chapter 1: Introduction Since the invention of the first integrated circuit (IC) in 19 58, the semiconductor industry...
- 132
- 434
- 0
Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors
Ngày tải lên :
12/09/2015, 11:29
... roughness (Ra) and Mn 11 8 concentrations FIG 4.5 (a) and (b) normalized M -T curves of the samples with different Mn concentrations The ferromagnetic 11 9 to antiferromagnetic transition point for ... electron diffraction pattern taken from one of the bright spots in the dark-field image The rings are indexed as 11 1, 220, and 311 orientations xvii 11 5 List of figures of Ge crystallites The strong ... Chapter Introduction and literature survey 1. 4 Objectives and motivation In this study, we focused on the fabrication and characterization of two kinds of spintronic materials: Fe3O4 and Ge1-xMnx...
- 208
- 383
- 0
Fabrication and characterization of the ultrafiltration and nanofiltration membranes
Ngày tải lên :
12/09/2015, 11:29
... cations and can fractionate anions in the binary salt mixture solutions of NaCl/Na2SO4 Through adjusting vii Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes WANG KAI ... Separation 10 8 Conclusions 11 0 iv Fabrication and Characterization of Ultrafiltration and Nanofiltration Membranes Chapter WANG KAI YU Chemical Modification of PBI Nanofiltration Membranes ... 1. 2 Devalopment and Applications of Nanofiltration Membranes 15 1. 2 .1 Nanofiltration separation mechanisms 18 1. 2.2 Nanofiltration separation models 22 1. 2.3 Fabrication of nanofiltration...
- 210
- 402
- 0
Fabrication and characterization of AIGaN gan HEMTs
Ngày tải lên :
05/10/2015, 22:32
... and the material quality of the semiconductor, which determines the amount of defects and dislocations The effective electron concentration and ionized impurity concentration primarily affect the ... thickness and composition of the n- doped-nitride epi-layer and the annealing conditions, and annealing is essential to these solid-state reactions 38 Owing to the complexity of these reactions, ... interfacial resistance, given by the shunt conductance, is independent of the sheet resistance Rs of the semiconductor layer beneath the contact, and (b) only the horizontal current flows in the...
- 110
- 589
- 0
Fabrication and characterization of lateral spin valves
Ngày tải lên :
05/10/2015, 22:32
... represents a nonmagnet Schematic diagram of a ferromagnet (FM) in contact with a nonmagnet (NM) N and F represents the distance which spin accumulation exists in the nonmagnet and ferromagnet respectively ... injection and detection of both spin components, thus reducing the injection and detection efficiency [18 ] 2.3 Summary of work done on lateral spin valves In the past studies of lateral spin valves, ... depends on the cleanliness of the interface between the FM and NM Ku et al [16 ] attributed their high spin polarization of 26 % to the well-controlled interface treatment between FM and NM, whereby...
- 120
- 319
- 0
Fabrication and characterization of photonic crystals
Ngày tải lên :
05/10/2015, 22:32
... colloidal crystals was investigated by fabricating colloidal crystals in the presence of different surfactants with different concentrations by sedimentation The addition of surfactants affected the array ... Photonic bandgap (PBG) crystals have attracted great attention because of their potential applications in confining and controlling electromagnetic waves in all three directions of space Three-dimensional ... of atoms However, one big difference between them is the scale of the lattice constant In the case of ordinary crystals, the lattice constant is on the order of angstroms On the other hand, it...
- 92
- 292
- 0
Fabrication and characterization of planar hall devices
Ngày tải lên :
05/10/2015, 22:32
... effect depends on the relative orientation of magnetization between neighboring layers, therefore information on the direction of magnetization of each layers is not directly obtained PHE effect ... dependent on the relative magnetization directions of the ferromagnetic layers and not on the measuring current direction This is in contrast to the AMR effect where magnetization – current field ... mask consists of nine contact pad patterns as shown in Fig 3 .11 Fig 3 .11 Mask for the second layer of contact pads The first mask was used to form the first layer of patterns on the Si wafer followed...
- 102
- 312
- 0
Fabrication and characterization of tunneling field effect transistors (TFETs)
Ngày tải lên :
06/10/2015, 20:36
... GBTBT Band to band generation rate Dtunnel Band to band tunneling factor ABTBT Material related parameters for band to band tunneling BBTBT Material related parameters for band to band tunneling ... Dimension The body thickness of a TFET affects the distribution of electric potential in the channel region of the device This in turn affects the band-to-band tunneling rate at a given bias If ... energy Ttun Tunneling probability V Tunneling barrier height Ebar Energy of a tunneling electron nc Electron concentration at the node right behind EC front pv Hole concentration at the node behind...
- 114
- 385
- 0
Tìm thêm:
- hệ việt nam nhật bản và sức hấp dẫn của tiếng nhật tại việt nam
- xác định các mục tiêu của chương trình
- xác định các nguyên tắc biên soạn
- khảo sát các chuẩn giảng dạy tiếng nhật từ góc độ lí thuyết và thực tiễn
- khảo sát chương trình đào tạo của các đơn vị đào tạo tại nhật bản
- khảo sát chương trình đào tạo gắn với các giáo trình cụ thể
- xác định thời lượng học về mặt lí thuyết và thực tế
- tiến hành xây dựng chương trình đào tạo dành cho đối tượng không chuyên ngữ tại việt nam
- điều tra đối với đối tượng giảng viên và đối tượng quản lí
- điều tra với đối tượng sinh viên học tiếng nhật không chuyên ngữ1
- khảo sát thực tế giảng dạy tiếng nhật không chuyên ngữ tại việt nam
- khảo sát các chương trình đào tạo theo những bộ giáo trình tiêu biểu
- nội dung cụ thể cho từng kĩ năng ở từng cấp độ
- xác định mức độ đáp ứng về văn hoá và chuyên môn trong ct
- phát huy những thành tựu công nghệ mới nhất được áp dụng vào công tác dạy và học ngoại ngữ
- mở máy động cơ lồng sóc
- mở máy động cơ rôto dây quấn
- các đặc tính của động cơ điện không đồng bộ
- hệ số công suất cosp fi p2
- đặc tuyến hiệu suất h fi p2