use of supported thin films of peptide amphiphiles as model systems of the extracellular matrix to study the effects of structure function phenomena on cell adhesion
... excess of one electron beyond the bonding octet can be promoted into the conduction band Asthe name implies, semiconductors lie between metals and insulators insofar as their ability to conduct ... reduces the net component of electron motion in the direction ofthe applied electric field Onthe other hand, in ionic and semiconductor solids production of more charge carriers is the result of ... atom, the electron energy levels are discrete, as shown onthe right-hand side of Fig 1-8a Asthe atoms approach one another, the individual levels split, as a consequence of an extension of the...
... respectively The measured PL excitation spectra corresponding tothe two emission bands allows to fix the excitation wavelength at ca 369 nm suitable tothe CdS thinfilms under consideration The typical ... obtained in the bath with ml of 1M CdSO4 solution for h In this case, the slow deposition rate led tothe small uniform grain size and shape and the good adhesiontothe substrate Onthefilms deposited ... all samples To vary the composition ofthe films, different concentrates ofthe CdSO4 and thiourea are used The CdS formation is detailed in the following series of chemical reactions: CdSO +...
... the oxide matrix along the depth ofthe films The incident angle variation changes the penetration depth of X-rays which increases with the increase in the value ofthe incident angle The XRD patterns ... with the vacancies/defects can easily migrate within thematrix thereby leading to extrinsic electronic conductivity The electron concentration in the oxide matrix is more or less proportional to ... low concentration but the uniformity ofthe aluminium distribution along the depth in the TiO2 matrix cannot be ensured Nevertheless, the GAXRD results indicate that thematrix is non-stochiometric...
... CE(λ) was 35 cm2 C− for the pure WO3 thin film which decreased to cm2 C− by increasing the gold concentration in the film to 6.4 mol% This reduction agrees with the decrease of ΔOD, asthe Au concentration ... porosity [44,46] of WO3 film and addition of conducting materials to it [47] facilitate the diffusion of Li+ tothe layer Thus, more penetrative ions cause stronger change in the color ofthe film, during ... increasing the coloring voltage, the transmittance ofthe colored films decreased and the rate ofthe coloration increased When the coloring voltage exceeds a certain value, the transmission of the...
... and conditions of film preparation Further studies to optimize the microstructure from these viewpoints would be necessary As mentioned above, incorporation of SiO2 in the WO3 sensing film to form ... concentrations for the films of pure WO3 and SiO2 (5%)–WO3 at 350°C are shown in Fig Rg/Ra was almost linear tothe NO2 concentration and the slope of SiO2 (5%)–WO3 was almost twice as steep as that of ... considered that the saturation ofthe first type adsorption at a low concentration of NO2 gives rise tothe inflection mentioned above It follows that these two types differ in adsorption kinetics,...
... investigate the effect ofthe Ar to O2 gas ratio onthe microstructure ofthe undoped ZnO thin films, the oxygen concentration in the Ar/O2 mixture was varied from 10 to 90% The chamber was evacuated with ... response of ZnO films sputtered onto microarrays in response to changes in the concentrations of reducing and oxidizing gases was examined and compared to other gas sensor materials (with focus on ... magnetron sputtering using a Zn metal target with 200 °C heating ofthe substrate Asthe O2/Ar gas ratio was increased, the intensity ofthe peak was increased and the value of FWHM was decreased...
... FESEM images as shown in Figure The morphology ofthefilms was found to be continuous and dense The average particle sizes varied in the range of 27.2 to 69.4 nm The crystallinity ofthefilms improved, ... 0.384° to 0.141° asthe deposition temperatures increased from 100°C to 350°C However, the FWHM value ofthe film prepared at 400°C increased to 0.154°, indicating the deterioration ofthe crystallinity ... composition evolved with the growth temperatures However, asthe substrate temperature increased to 400°C, the Zn/S ratio ofthefilms also increased to 1.04 This increase can be attributed to the...
... fully ionized, and condense as droplets as they leave the plasma region In addition to nanoparticle synthesis, thermal plasma CVD has also found success in ZnO thin film synthesis at a subatmospheric ... we introduce a thermal plasma CVD process using only solid zinc asthe source material, thereby simplifying the design ofthe synthesis system We demonstrate the deposition of conformal, nanocrystalline ... the experiments; Curtis Hilger for his work onthe implementation and tuning ofthe control system; and Mark Brunson for a portion ofthe data collection work Acknowledgment is made tothe Donors...
... In contrast, the rate capability and cyclic performance ofthe AlF3- and LaF3coated films were superior to those ofthe pristine film Figures 2b to 2d illustrate the voltage profiles ofthe pristine ... surface ofthe pristine LiCoO2 film from the reactive electrolyte Introduction Lithium-ion batteries are used as power sources for a wide range of applications such as cellular phones, personal ... the surface ofthe LiCoO2 cathode film from the acidic electrolyte attack, thus preventing the deterioration ofthe cathode interface This is possibly the reason for the enhancement ofthe rate...
... that polymer conformation of PVK thinfilms was affected by the processing method as well as by the solvent's molecular structureas also indicated in PL results in Figure Based on these results, ... process, the blend ink was injected through the nozzle at a rate of 30 µl/min, and about kV was applied to break the meniscus formed at the tip ofthe nozzle The distance between the tip ofthe nozzle ... 180°C) is added to CB (ε = 5, boiling point = 130°C) [17] to balance solubility and droplet control The concentration of droplets at the time of deposition is then controlled by managing the droplet...
... reduction ofthe leakage current induced by doping and the formation of a solid solution In these investigations, the capacitor structure formed from the metal-insulator-metal structure is used ... Figure shows the dielectric constant and dielectric loss ofthe PZT/BFO multilayer thinfilmsas a functionofthe measuring frequency from kHz to MHz The relative dielectric constant decreased with ... measurement It should be noted that current measured in the capacitor structure includes contributions ofthe grain boundaries or a microstructure ofthefilms We have already reported on the...
... state to another where the overlapping of wave functions exists The difference in corresponding eigen energies is compensated by the absorption or emission of phonons Thus, the variation of electrical ... observed The copper and the carbon peaks correspond tothe carbon coated copper grid of TEM No peaks of other impurity have been detected Therefore, the EDX profile of sample (inset of Figure ... h; the smooth, uniform, and bright silver film has been obtained onthe quartz substrate due tothe evaporation ofthe solvent (ethanol) under reduced pressure The film shows good adhesionto the...
... which is based onthe shift ofthe TO3 peak towards that of stoichiometric SiO2 [13], the detection of Si excess is limited tothe Si atoms bonded to O, and does not take into account the agglomerated ... steps ofthestudy XP carried out the TEM experiments BG participated tothe finalization ofthe manuscript RR drafted the manuscript, together with contributions tothe analysis ofthe results ... profiles along almost the whole thickness demonstrates that the thickness ofthe material has no influence onthe stoichiometry ofthe deposited SiO x However, the x parameter was found to increase...
... single phase VO2(M) for all thefilms regardless of dopant element and concentration The dopants effectively decreased the transition temperature of VO whereas the thermochromism ofthefilms was markedly ... resistivity ofthefilms [26] The doping of VO increased the electron density in the film, which caused the Fermi energy level shift toward the conduction band Since intrinsic VO2 thin film is of n-type, ... through two gas mass flow controllers The deposition parameters chosen to deposit the three sets offilms are summarized in Table The doping ofthefilms was done by placing a number of high-purity...
... (ahν)2 as a functionof photon energy (hν) and extrapolating the linear region of (ahν) to energy axis where (ahν) corresponds to zero Figure 2b shows the plot of (ahν)2 as a functionof photon energy ... expressed as a linear The electrical resistivity, charge carrier concentration and Hall mobility as a functionofthe Pw, for GZO films deposited on glass, are shown in Figure The resistivity of GZO ... (hν) for GZO films From these plots, it can be seen that the value ofthe bandgap of GZO decreased from 3.73 eV (0.41 Pa) to 3.48 eV (0.86 Pa), which can be understood in the context ofthe Burstein...
... which the central zone was heated, was used for SiC film deposition The silicon wafer was placed on a graphite holder, with a thermocouple attached tothe end The sapphire tube was connected to a ... presents the peak position ofthe (aSi = 5.38 A TO- SiC peak as a functionof distance, x From this figure, the peak position varies from 794.5 cm-1 at the middle ofthe void to 793.5 cm-1 outside the ... can contribute tothe observed enhancement of Raman signal: (a) multiple reflection ofthe incident light inside the void, (b) multiple reflection ofthe Raman signal in the SiC layer on top of the...
... decreases on increasing Ga concentration This may be due tothe decrease in the grain size, the increase in the disorderedness of these systems This may also be due tothe increase in the density of ... pre-exponential factor are calculated The estimated value of activation energy decreases on increasing Ga content in the Se system Onthe basis of pre-exponential factor (r0), it is suggested that the ... content as shown in Table The addition of Ga in the glass structure causes deeper band tails extended in the gap and thereby, leading to a decrease in the value of optical band gap 123 ThinFilms of...
... shows the XRD patterns ofthe TiO2 thinfilmsas a functionofthe precursor temperature All the TiO2 thinfilms were deposited onthe glass substrate at 400°C Sample A showed the anatase phase ... amorphous phase ofthe TiO2 thinfilmsonthe glass substrate at 400°C exists up tothe precursor temperature of 60°C The anatase phase appears at a precursor temperature of 75°C The influence ofthe ... deposition, and the application to large-area deposition Also, this method is of low cost, and it is easy to control the deposition growth parameters Thus, the MOCVD method is well known as one of the...