Hot carrier mechanisms in advanced NMOS transistors 2

... enhancement in strained-Si (b) improvement of Ion-Ioff characteristics in the strained-Si [71] Chapter Introduction 25 NMOS µ eff enhancement 2. 4 2. 2 2. 0 1.8 1.6 1.4 1 .2 Calculated 1.0 0.0 0.1 0 .2 0.3 ... wave function in the inversion layer than that in the bulk Si In other words, a thinner inversion layer is formed in the former [69][70] Reduction in intervalley...

Ngày tải lên: 14/09/2015, 14:03

... Chapter 1. 1 INTRODUCTION Impact of CMOS Technology Scaling on the Hot- Carrier Effects 1. 1 .1 Bulk Si CMOS Technology Trend 1. 1.2 The Change in CMOS Scaling Approach 1. 1.3 Hot- Carrier Degradation in ... 19 1. 2.2 Current Enhancement in Strained-Si NMOSFET 21 1.2.3 The Self-Heating Effect 27 1. 2.4 Process Induced Strain Relaxation 29 1. 3 Hot- Carrier Degradation...

Ngày tải lên: 14/09/2015, 14:03

... in the channel Thus, the incremental increase in charge-pumping current is interpreted as the interface traps present in that portion of the channel This technique was well received for hot- carrier ... probe the hot- carrier damage in regions under the spacer and that in the gate overlap The principle of this method is based on the change in resistance in the channel and...

Ngày tải lên: 14/09/2015, 14:03

... trap assisted tunneling in thin oxides by means of substrate hot electron injection experiments,” in Proc Int Electron Devices Meeting Tech Digest, pp 159-162, 2002 Chapter Hot- carrier Mechanism ... “Mechanism for hot- carrier- induced interface trap generation in MOS transistors, ” in Proc Int Electron Devices Meeting Tech Digest, pp 85-88, 1999 [27] Z Chen, P Ong, A K Myli...

Ngày tải lên: 14/09/2015, 14:03

... [22][23] This finding indicates that the SCE plays a major role in suppressing the injection of HETE in strained-Si NMOSFET Chapter Importance of Dopant Profile in Strained-Si/SiGe NMOSFET Threshold ... Profile in Strained-Si/SiGe NMOSFET 112 4.3 Injection Efficiency of High-Energy Tail Electrons As mentioned in section 3.3, the hot- carrier induced damage in bulk Si arising f...

Ngày tải lên: 14/09/2015, 14:03

... 1 36 The parameter h can be obtained by plotting Id(Vd0,Ta) as a function of Ta, and taking the slope of the linear regression line Now, assuming in the same Ta range, the drain current is a linear ... = 1.8 V) In the case for strained-Si, R increases non-linearly as Wp reduces The ratio R in strained-Si is also much larger than unity for all Wp values indicating self-heating is causin...

Ngày tải lên: 14/09/2015, 14:03

... vol 48, pp 671 - 678 , Apr 2001 Chapter Spatial Interface Damage Due to Self-heating [14] 179 D S Ang and C H Ling, A new assessment of the self-limiting hot- carrier degradation in LDD NMOSFET's ... Devices Meeting Tech Digest, pp 177 -180, 2003 [4] M F Lu, S Chiang, A Liu, S H Lu, M S Yeh, J R Hwang, T H Tang, and W T Shiau, Hot carrier degradation in novel strained-Si nMOSFETs,”...

Ngày tải lên: 14/09/2015, 14:03

... (SOI) In chapter five, the extracted value of Tch arising from this self-heating effect is ~760 °C during hot- carrier stress In the following experiment, the Ge concentration near the strained-Si ... of severe channel heating on the strained-Si/SiGe interface Thus, it is essential to examine this interface when the transistor is subjected to hot- carrier stress condition In this...

Ngày tải lên: 14/09/2015, 14:03

... Conclusion 198 the gate current is mainly responsible for the shift in the worst-case hot- carrier degradation The reduction in the oxide potential barrier as indicated by the slope n, again lending support ... applied to the substrate In order to establish the main hot- carrier degradation mechanism in strained-Si, the effects related to the underlying SiGe is studied in deta...

Ngày tải lên: 14/09/2015, 14:03

... differentiation and equating the result to zero as: dP dV2  V1 d [V1  V2  V1  V2 ] S dV2   d [ V 12  V2 V1  V2 ] S dV2   S[ V 12  V2  2V2 V1  V2 ]   S(V 12  V 22  2V1V2  2V2 )  ... Fig Pressure and speed variation in an ideal model of a wind turbine V2 S2 22 Fundamental and Advanced Topics in Wind Power (6) P   SV (V1  V2 ) The power...

Ngày tải lên: 19/06/2014, 21:20

... 1995) Hereby no moving parts pass through the solution, but the 44 Mass Transfer Advanced Topics in Mass Transfer solution itself is pumped through small openings causing jet mixing in the system ... operating conditions of the jet systems are described in table Fig Definition diagram of a jet array, showing the single jet discharges and their merging  12 54 Mass Transfe...

Ngày tải lên: 19/06/2014, 23:20

... √ Mγ (t2 /2) F1 πΓ (2Lμ + 1) 2 , Lμ, Lμ; 2Lμ + 1; , 2 + At2 + Bt2 (18) whereas (17) is reduced to: uvMγ ( u +v ) u2 + Au2 ( 3) F , , 1, 1, Lμ, Lμ; 2Lμ + ; 2 u + v2 + Au2 + Av2 2 (u2 + v2 )(4Lμ ... M2 −1) I Q b= Mγ u2 sin2 θ dθ (15) 6r ( M2 −1)+r ( M2 −1) I Q Using the result in (7), the integral J (t) can be easily evaluated in terms of the Lauricella functions as: 52 Advanced...

Ngày tải lên: 19/06/2014, 23:20

... (Copyright © 20 02, Oracle Corporation, Redwood Shores, CA.) 52 Chapter | Chapter The Analytical Functions in Oracle (Analytical Functions I) What Are Analytical Functions? Analytical functions were introduced ... let’s begin with the row numbering and ranking functions The Row-numbering and Ranking Functions There is a family of analytical functions that allows us to sho...

Ngày tải lên: 08/08/2014, 18:21

... To our Figure Inhibition of trypsin-induced cyclooxidase-2 (COX-2) expression by proteinase-activated receptor- 2-inhibiting peptide (PAR2-IP) in human synoviosarcoma cells Human synoviosarcoma ... Inhibition of trypsin-induced nuclear factor (NF)-B activation by proteinase-activated receptor- 2-inhibiting peptide (PAR2-IP) in synovial cells Human primary synovial...

Ngày tải lên: 10/08/2014, 05:21

... al, 1998 12 Total No of Procedures 20 0 21 4 145 30 150 169 1 12 2 12 1 ,23 2 NA = not available; VATS = video-assisted thoracic surgery Incidences of Cancer 171 168 103 15 123 1 42 99 21 2 1,033 Incidences ... 55 19 24 54 17 20 50 NA NA 21 24 35 39 28 10 10 64 20 40 33 NA 11 24 35 72 1 32 30 17 36 124 63 157 11 (5 yr) 28 (5 yr) NA (5 yr) 32 25 (3.5 yr) 20 (3 yr) 31 (5...

Ngày tải lên: 11/08/2014, 01:22