MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx

... Temperature Coefficient SID 12 I Overview 13 1 c 41 I 51 16 1 17 1 18 1 19 1 c1 01 11 21 c1 31 11 41 c1 51 c1 91 E. H. Snow, A. S. Grove, B. E. Deal, and C. T. Sah, ‘Ion transport ... integration’, ibid, ED- 31, pp. 15 5 5 -1 5 61 (19 84). 1. 1 Circuit Design and MOSFETs 3 1. 1 Circuit Design with MOSFETs For today’s circuit design, computer-...

Ngày tải lên: 13/08/2014, 05:22

... for silicon can be modeled using the following polynomial equation [ 151 1 .20 6 -2 .73 x lOP4T (2. 2a) 1.178 5-9 . 025 x 1 0-5 T-3.05 x 10p7T2 (2. 2b) 1.17+ 1.059 x 10p5T-6.05 x 1 0-7 T2 ... Fermi-Dirac At 77K ni for silicon is -1 0 -2 0cm-3, while at 400K its value is -1 O'*~m-~ 28 2 Basic Semiconductor and pn Junction Theory none...

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... + + pMOST - - - + terminal voltages as drain-source voltage Vds( = V, - VJ, gate-source voltage V,,( = V, - V,), and bulk-source voltage vb,( = vb - Vs). For normal DC ... has heavily doped p+ source and drain regions with 80 Z 4 LL 0 - W/L = to, = V. 3 MOS Transistor Structure and Operation -4 .0 -3 .2 -2 .4 -1...

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... expression for Rsp, based on the assumption of uniform doping 128 4 MOS Capacitor I- -t > O O+ -0 .6 1 A1 (p-Si n+ Po~y(p-si) -o-8 -I .o Nb (~rn-~) _t Fig. 4. 5 Work ... Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. 3.3 1 Cross-section showing overlap capacitances between the source/drain and the...

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... Eq. (5. 14) Substrate Vfb df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for ... frequency MOS capacitance’, Solid-state Electron., 17, pp. 73 5- 7 42 (1974). ED-32, pp. 61 7-6 21 (I 9 85) . 5. 1 MOSFET with Uniformly Doped Sub...

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... (a) - - - 16 -3 A Nb=1.71 x 10 cm x Nb = 1.5 6 x 1Ol6c m3 N 4-2 5 x 1 0'6cm-3 0. 3- 2 6 10 I& I8 2 WIDTH (pm) (b) Fig. 5.21 (a) Aker's model for ... 0.0 u- 0.7 W Q !i 0 .6 0 > 4 0.5 0 >" ;- I 5 0.4 lY I bO.3 195 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10&apo...

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... Devices, ED-33, pp. 174 5-1 75 2 (1986). [77 ] S. C. Jain and P. Balk, ‘A unified analytical model for drain-induced barrierlowering and drain-induced high electric field in a short-channel MOSFET , ... MOSFET , Solid-State pp. 11 8-1 27 (1989). Electron., 30, pp. 50 3-3 11 (19 87) . [78 ] Y. Omura and K. Ohwada, ‘Threshold voltage theory for short-channe...

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... Qb = - cuxY = - cuxY (6 .88 ) Further, since Qi << Qb, we have Q, z Qb, so that Eq. (6.19) becomes Qb Vgb = Vfb + 4ss - CUX Solving Eqs. (6 .88 ) and (6 .89 ) for 4,s ... &eff as (6.1 48) where 5 = 0.5 for n-channel devices, and 5 = 0.25 - 0.30 for p-channel devices." Using Qb from Eq. (6. 78) and Qi from Eq....

Ngày tải lên: 13/08/2014, 05:22

... Lett., EDL-2, pp. 46 6-4 68 ( 199 0). [80] N. Kotani and S. Kawazu, ‘Computer analysis of punch-through in MOSFETs’, Solid-state Electron., 22, pp. 6 3-7 0 ( 197 9). ED-36, pp .96 3 -9 67 ( 198 9). ( 199 0). ... Masetti. ‘A .CAD-oriented analytical MOSFET model for 34 5-3 55 ( 197 8). 99 1 -9 97 ( 197 9). L_. high-accuracy applications’, IEEE Trans. Computer-Aided De...

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... 32, pp. 5 7-6 3 (1989). [l5] R. Gharabagi and A. El-Nokali, ‘A charge-based model for short-channel MOS transistor capacitances’, IEEE Trans. Electron Devices, ED-37, pp. 106 4-1 072 (1990). ... conservative MOSFET model’, IEEE Trans. Computer-Aided Design, CAD-7, [14] R. Gharabagi and A. El-Nokali, ‘A model for the intrinsic gate capacitances of short-channel MOSFETYs’,...

Ngày tải lên: 13/08/2014, 05:22

... Modeling Hot-Carrier Effects For n-channel MOSFETs, I,, or (Ib/Id) is a well accepted monitor for hot- carrier induced degradation. However, for p-channel MOSFETs both 1, [45] and ... prediction method for hot-carrier-stressed p-MOS transistors’, IEEE IEDM-91, Tech. Dig., pp. 52 5-5 28 (1988). [45] W. Weber and F. Lau, ‘Hot-carrier drifts in submicrometer p-ch...

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... depletion HF C-V curve from an MOS capacitor. 29 __ _- 1-9 g-lng-1 1-9 416 9 Data Acquisition and Model Parameter Measurements I TEST SIGNAL - GROUND HP4275A LCR METER - Fig. ... 0" W 0 2 - 2 2 4 0 W I- < W I I I I -5 .0 -3 .0 -1 .0 1.0 3.0 5 GATE VOLTAGE V,,(V) Fig. 9.14 Typical high-frequency C-V plot of an MOS...

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... 12), North-Holland, New York, 1989. [13a] K. R. Mistry and B. Doyle, ‘AC versus DC hot-carrier degradation in n-channel MOSFETs’, IEEE Trans. Electron Devices, ED-40, pp. 9 6-1 04 (1993). ... measurement’, Solid-state Electron., 27, pp. 95 3-9 62 (1984). See also related papers, ibid, pp. 96 3-9 75 and pp. 97 7-9 88 (1984). [17] M. Kuhn, ‘A quasi-static technique f...

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... 10.6 Parameter Extraction Using Optimizer 53 1 lo-' 1 0-2 1 0-3 9 lo4 I 0-5 1 0-6 1 lo-' 1 0-2 1 0-3 9 lo4 I 0-5 1 0-6 1 0-7 10" 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 ... [l] G. T. Wright and H. M. A. Gaffur, ‘Preprocessor modeling of parameter and geometry dependence of short and narrow MOSFET for VLSI circuit simula...

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... manage- able form, if the following substitutions are made (1 1.26a) 538 11 SPICE Diode and MOSFET Models s - 1 0-4 u 1 0-5 3 1 0-6 0 U z U U 0 I %= 8.99 1 0-1 4 A r,= 15. 88R ... IEEE Int. Conf. on Computer-Aided Design, ICCAD-84, pp. 18 4-1 51 (1984). [13] S. L. Wong and C. A. T. Salama, ‘Improved simulation of p- and n-channel M...

Ngày tải lên: 13/08/2014, 05:22