building software for simulation theory and algorithms

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx

... threshold voltage V,, for n- and p-channel MOSFETs as a function of substrate doping N, for n+ polysilicon gate (left scale) and p+ polysilicon gate (right scale) for three different ... criteria for strong inversion have been suggested for non-uniformly doped substrates [2], [33]-[36]. Some of these are: I. The classical criterion given by Eq. (5.12) is still used for non-uniformly ... charge and hence threshold voltage. However, such complex models are not suitable for use in circuit simulators. For this reason they are not discussed here and details of the equations for

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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx

... and have made use of Eq. (6.23) for y and Eq. (6.22) for Vq!. Remembering that Vcb(y = 0) = V,b and Vcb(y = L) = V,b+ V,,, the inversion charge Qis and Qid at the source and ... between 0 and 0.5 and represents the contribution to the field due to drain voltage The exponent v is approximately 0.25 for n-channel and 0.15 for p-channel devices [SO] For devices ... (6.145) and (6.146) for cYxl and cYX2 and substituting in Eq (6.144) yields (6.147) Thus is related to the bulk depletion charge Qb and to the inversion charge Q i This equation for cYeff

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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 9 potx

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 9 potx

... X,, and X,, are the source and drain depletion widths, respectively, at the surface, given by Leff = L - Xs, - X,, (6.211b) and (6.211~) [...]... uniformly and nonuniformly ... model... on MOS device and circuit performance’, IEEE Trans Electron Devices, ED-31, pp 138 6-1 396 ( 198 4) [90 ] B Hoefflinger, H Sibbert, and G Zimmer, ‘Model and performance of hot electron ... and M Sharma, MOSFET substrate current model for circuit simulation , IEEE Trans Electron Devices, ED-38, pp 1 39 2-1 398 ( 199 1) 1 891 C G Sodini, P K KO ,and J... J Solid-state and

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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 10 pot

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 10 pot

... normalized source and drain charges, Qs and Qd, respectively, as a function of Vds for different Vgs, with and without velocity saturation... V,, = 4.6 and 3.8 V and V,, = OV for a typical ... integration formula. Note The subscript j stands for G, S, D or B for the charge Q and capacitance C, as we are now dealing with the total charge or total capacitance. However, for ... L, and V = Vd,, so that we have Now combining Eq. (7.53) with Eqs. (7.50) and (7.54) and carrying out the integration, we get after lengthy algebra the following expression for QD and

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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 12 ppt

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 12 ppt

... the following equation (9.10) where the + and - signs are for n- and p-substrate, respectively, and chfo and CLfo are values of chf and Ck, respectively, at V, = V,,. 4. Extract ... Eqs (2.15) and (4.74) and solving for the substrate concentration N yields (9.13) where A, is the MOS capacitor gate area This is a transcendental equation for N and therefore must be ... points line and defined as [cf Eq (6.148)] 1 (9.44) + iQi) g e f f == -( Qb EOEsi where [ = 0.5 for electrons (nMOST), 0.3 for holes (pMOST), and Qb and Qi are bulk and inversion

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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 13 ppsx

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 13 ppsx

... - 1.1 V for n-channel device with W/L = 510.25 pm) in C-V data for short-channel devices [90] Therefore, one can use Eq (9.75)... true for standard source/drain junctions for large ... by Terada and Muta 1601, was reformulated by Chern et al. [61] and later slightly modified by many others [62]-[68]. It is the most commonly used method for determining AL and has become ... 02 (9.66) where Q1 and d2 are the values for (do/po + R,) for the devices with channel length L,, and Lm2, respectively. In a method proposed by Suciu and Johnston [79], the

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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 14 potx

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 14 potx

... and gd,, we will have (10.57) where W, and W, are the relative weights for the current and conductance respectively, wi is the weight for each data point (current or conductance) and ... function For a specified probability and number of degrees of freedom, ie., given n and a, the integral equation (10.71) can be solved iteratively for a, - a (see Chapter 6... ,A, and ... A. Vladimirescu and S. Liu, ‘The simulation of MOS integrated circuits using SPICET, Memorandum No. UCB/ERL M80/7, Electronics Research Laboratory, University of California, Berkeley,

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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 15 doc

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 15 doc

... parameters which accounts for length and widths dependence of V F B ; that is, LVFB and WVFB are the corresponding L and W sensitiuityfuctors for V F B and have units of Volts.pm ... voltage (V,,, d f , y , K , and v ] ) and 4 for drain current (Po, U o , U , and n) However, 5 parameters ( v ] , Po, U o , U , and n) depend on bias voltages Vd, and V,, as follows: + ... deviation for each of the model parameters obtained from different dice and wafers Once the mean pi and the standard deviation si for each parameter p i is known, a test for 'outlier'

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DSpace at VNU: Building System for Simulation of Dynamics and Pollution Transport in Shallow Basins

DSpace at VNU: Building System for Simulation of Dynamics and Pollution Transport in Shallow Basins

... ritorial water and tidal affcct in small bays and coastal areas National Center for Science and Technology, Institute of Oceanography Aiarine Resources and Envi­ ronment, V III Sciencc and Techiiolog>- ... respectively and the Í value refer to the mesh center (Figure 1) Figure 1: Orthogonal grid for spatial and time discretisation 111 this case the finite difforcuce analogs of the equations ( ) (3) for ... cdy \ p pH (6) Building sy stem f o r sim ulation o f dynam ics and 13 and the equation of continuity in this case has the same form (3) If the free surface vrlocity is required for siibsoqiiout

Ngày tải lên: 11/12/2017, 12:05

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Building system for simulation of dynamics and pollution transport in shallow basins

Building system for simulation of dynamics and pollution transport in shallow basins

... ritorial water and tidal affcct in small bays and coastal areas National Center for Science and Technology, Institute of Oceanography Aiarine Resources and Envi­ ronment, V III Sciencc and Techiiolog>- ... respectively and the Í value refer to the mesh center (Figure 1) Figure 1: Orthogonal grid for spatial and time discretisation 111 this case the finite difforcuce analogs of the equations ( ) (3) for ... cdy \ p pH (6) Building sy stem f o r sim ulation o f dynam ics and 13 and the equation of continuity in this case has the same form (3) If the free surface vrlocity is required for siibsoqiiout

Ngày tải lên: 18/03/2021, 10:35

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Báo cáo y học: " EpiGRAPH: user-friendly software for statistical analysis and prediction of (epi)genomic data" pps

Báo cáo y học: " EpiGRAPH: user-friendly software for statistical analysis and prediction of (epi)genomic data" pps

... one-time-use scripts for data integration, statistical analysis and prediction (for example, [8-19]) Such manual analyses are time-consuming to perform, difficult to reproduce and require bioinformatic skills ... comparisons between positives and negatives, which were performed for each attribute using Wilcoxon's rank-sum test (for numerical attributes) and Fisher's exact test (for categorical attributes) ... regression; random forest; C4.5 tree generator; and naïve Bayes All of these are implemented using functions from the Weka package [48] with default parameters For comparison and to give a baseline for

Ngày tải lên: 14/08/2014, 21:20

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optical control plane theory and algorithms

optical control plane theory and algorithms

... PLANE: THEORY AND ALGORITHMS A Dissertation Submitted to the Graduate Faculty of the Louisiana State University and Agricultural and Mechanical College in partial fulfillment of the requirements for ... ProQuest Information and Learning Company. Acknowledgments I would like to express my sincere gratitude to Dr. Ahmed El-Amawy for being my research mentor. I am thankful for all the guidance and advice ... Trahan and Dr. J. Ramanujam for their helpful comments and pointers to inherent theoretical hurdles I encountered along the way. I also want to thank Dr. Hsiao-Chun Wu for his encouragement and

Ngày tải lên: 13/11/2014, 09:23

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The Significance Of The Language For Accounting Theory And Methodology

The Significance Of The Language For Accounting Theory And Methodology

... Significance of Language for Accounting Theory and Methodology Abstract Abstract The significance of language for accounting theory and methodology is investigated and discussed through three ... to return my gratitude to her in return for her selfless donation of time, effort and skill for me VI The Significance of Language for Accounting Theory and Methodology Acknowledgement Mr ... Language Variation and Change 41 VIII The Significance for Language for Accounting Theory and Methodology Bibliography Skyttner, Lars (2001), General Systems Theory; Ideas and Applications,

Ngày tải lên: 10/12/2016, 15:29

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Solution manual for simulation modeling and analysis 5th edition by law

Solution manual for simulation modeling and analysis 5th edition by law

... Problems in Chapter 1 of Simulation Modeling and Analysis, 5th ed., 2015, McGraw-Hill, New York by Averill M Law Full Download Solution Manual for Simulation Modeling and Analysis 5th Edition ... https://getbooksolutions.com/download/solution-manual-for-simulation-modeling-and-analysis-5th-edition-by-law or go to https://getbooksolutions.com and search text

Ngày tải lên: 01/03/2019, 09:04

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Building Software for Simulation: Theory and Algorithms, with Applications in C++ doc

Building Software for Simulation: Theory and Algorithms, with Applications in C++ doc

... components to inputs for its other components and outputs from itself, and for transforming its inputs into input for its components. Algorithms for event scheduling, numerical integration, and other necessary ... Cataloging-in-Publication Data: Nutaro, James J. Building software for simulation: theory and algorithms with applications in C++ / James J. Nutaro p. cm. Includes bibliographical references and index. ISBN 978-0-470-41469-9 ... for computing its output from its current state and for computing its next state from its current state and input. A network model has methods for retrieving its set of components, for transforming output...

Ngày tải lên: 29/03/2014, 22:20

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Mosfet Modeling for VLSI Simulation: Theory And Practices by N. Arora pot

Mosfet Modeling for VLSI Simulation: Theory And Practices by N. Arora pot

... physical process and geometry structure on the one hand and In the loving memory of my parents Hukamdevi and Guranditta Arora 16 2 Basic Semiconductor and pn Junction Theory 0 FREE ... record for this book is available from the British Library. MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electronics and Technology ... 2.1 Energy band diagram of a semiconductor (silicon) separate bands of allowed energies, called the valence band and the conduction band. The energy levels in the valence bands are mostly...

Ngày tải lên: 27/06/2014, 05:20

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MOSFET MODELING FOR VLSI SIMULATION Theory and Practice docx

MOSFET MODELING FOR VLSI SIMULATION Theory and Practice docx

... Consultant) and Dr. Llanda Richardson (Consultant) for their encouragement and assistance in writing this book. I am deeply indebted to Dr. F. Fox, Dr. D. Ramey, and Mr. K. Mistry for their ... editors and this monograph volume’s copy editor Mr. Tjan Kwang Wei at Singapore, led by Dr. Yubing Zhai at New Jersey, for their and her timely efforts, and Professor Kok-Khoo Phua, Founder and ... electrons in the conduction band and holes in the valence band is represented by the effective masses of the electrons (m:) and holes (m;) respectively, and by the equivalent positive...

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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 1 potx

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 1 potx

... Consultant) and Dr. Llanda Richardson (Consultant) for their encouragement and assistance in writing this book. I am deeply indebted to Dr. F. Fox, Dr. D. Ramey, and Mr. K. Mistry for their ... record for this book is available from the British Library. MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electronics and Technology ... Models for hot-electron effect, particularly substrate and gate current models, and device life-time models are covered in Chapter 8. The experimental setup, required for taking device data for...

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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 2 ppt

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 2 ppt

... and pn Junction Theory Similarly for holes we have (2.3 8 b) where R, and G, are recombination and generation rates for holes. These equations are called continuity equations for ... is positive for forward bias and negative for reuerse bias. If the applied forward voltage is exactly equal to the built-in voltage, there will be no barrier and therefore, there will ... carrier concentration is greatest. For example, for p+n junctions, N, >> N,, and therefore Eq. (2.56) 46 2 Basic Semiconductor and pn Junction Theory 2.6 Diode Current-Voltage...

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