... , and in the right triangles PNQ and MNP, angle N = angle N Since all right angles are equal, and since triangles with two equal angles are similar, triangle MPQ is similar to triangle MNP and ... x-intercept -4 and y-intercept We know that b = and that the line crosses the axes at (-4, 0) and (0, 6) Use these two intercepts to find the slope m m= 6-0 = = - (-4) Thus the equation for the line ... Turn Find the equation (in slope-intercept form) of the line through (2, 9) and (5, 3) First find the slope 3-9 -6 = = -2 5-2 Now use the point-slope form, with ( x1, y1) = (5, 3) m= y - y1 = m(
Ngày tải lên: 20/08/2020, 11:45
... PNQ, and MNP are right triangles by construction In triangles MPQ and MNP, angle M = angle M , and in the right triangles PNQ and MNP, angle N = angle N Since all right angles are equal, and ... x-intercept -4 and y-intercept We know that b = and that the line crosses the axes at (-4, 0) and (0, 6) Use these two intercepts to find the slope m m= 6-0 = = - (-4) Thus the equation for the line ... form y - = -2( x - 1) y = -2 x + + y = -2 x + 16 The line goes through (2, 4), with slope m = -1 Use point-slope form y - = -1( x - 2) y - = -x + y = -x + 17 The line goes through (-5, - 7) with
Ngày tải lên: 20/08/2020, 11:45
Test bank for finite mathematics and calculus with applications 10th edition by lial
... Test Bank for Finite Mathematics and Calculus with Applications 10th Edition by Lial Full file at https://TestbankDirect.eu/ 135) The following are the temperatures on randomly chosen days and the ... Test Bank for Finite Mathematics and Calculus with Applications 10th Edition by Lial Full file at https://TestbankDirect.eu/ Find the correlation coefficient 127) Consider the data points with the ... https://TestbankDirect.eu/ y 10 x Test Bank for Finite Mathematics and Calculus with Applications 10th Edition by Lial Full file at https://TestbankDirect.eu/ 125) 125) For the following table of data,
Ngày tải lên: 27/08/2020, 14:01
Solution manual for finite mathematics and calculus with applications 9th edition by lial
... , and in the right triangles PNQ and MNP, angle N = angle N Since all right angles are equal, and since triangles with two equal angles are similar, triangle MPQ is similar to triangle MNP and ... x-intercept -4 and y-intercept We know that b = and that the line crosses the axes at (-4, 0) and (0, 6) Use these two intercepts to find the slope m m= 6-0 = = - (-4) Thus the equation for the line ... Turn Find the equation (in slope-intercept form) of the line through (2, 9) and (5, 3) First find the slope 3-9 -6 = = -2 5-2 Now use the point-slope form, with ( x1, y1) = (5, 3) m= y - y1 = m(
Ngày tải lên: 27/08/2020, 15:46
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 1 potx
... Capacitor Applications 16 1 4.7 Nonuniformly Doped Substrate and Flat Band Voltage 16 2 4.7 .1 Temperature Dependence of Vfb 16 3 References 16 5 5 Threshold Voltage 16 7 5 .1 MOSFET with ... References 534 11 SPICE Diode and MOSFET Models and Their Parameters 536 11 .1. .. The understanding of my wife Suprabha, and the cooperation of my son Surendra and daughter Shilpa all were ... devices are built with these technologies The modeling of power MOSFETs is not covered in this book [13 ,14 ] 1. 1 Circuit Design and MOSFETs 3 1. 1 Circuit Design with MOSFETs For today’s
Ngày tải lên: 13/08/2014, 05:22
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 2 ppt
... and p n Junction Theory 38 Similarly for holes we have (2. 38b) where R, and G are recombination and generation rates for holes These , equations are called continuity equations for ... Semiconductor and pn Junction Theory 0 FREE ELECTRON (-) 0 HOLE (+I Fig. 2.1 Energy band diagram of a semiconductor (silicon) separate bands of allowed energies, called the valence band and ... density versus resistivity at 23 °C for silicon doped with phosphorous and boron (After Muller and Kamins [S].) not uniform, such as would occur for ion imp1anted"j or diffused layers
Ngày tải lên: 13/08/2014, 05:22
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 3 docx
... assumes E, = 1.1 1 eV for silicon, 0.67 eV for Germanium, and 0.69 eV for SBD. The temperature exponent factor p equals 3 for silicon and germanium while for SBD its value is 2. ... (2.76) for Qdif and Id is given by Eq. (2.82). Using Eqs. (2.74) and (2.75) for Cj we get IOVd vd ' Fc($bi. (2.86) 64 2 Basic Semiconductor and pn Junction Theory ... diode current I, and I, for the two different structures as a function of voltage and knowing A,, Pa, A, and P, for the two structures, we can calculate I,,,, and Iperi using
Ngày tải lên: 13/08/2014, 05:22
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 4 doc
... Structure and Operation (primary substrate p-type for nMOST and n-well for pMOST) or a p-well process (primary substrate n-type for pMOST and p-well for nMOST). Another alternative is to form ... contact via and the channel region, p, is the sheet resistance per square (n/o) and W is device width. For a typical 1 pm CMOS technology, p, = 30 and 60R/O for n+ and p+ regions, ... structure for n- channel MOSFET is formed by implanting phosphorous (P) and arsenic (As) into the source-drain region. A lightly doped n-region (n-) is first formed using P and then
Ngày tải lên: 13/08/2014, 05:22
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx
... threshold voltage V,, for n- and p-channel MOSFETs as a function of substrate doping N, for n+ polysilicon gate (left scale) and p+ polysilicon gate (right scale) for three different ... fabricated with p+ polysilicon gate while nMOSTs are with n+ polysilicon gates. With p+ polysilicon gate, pMOST has channel implant of the same type as substrate and therefore, from a ... criteria for strong inversion have been suggested for non-uniformly doped substrates [2], [33]-[36]. Some of these are: I. The classical criterion given by Eq. (5.12) is still used for non-uniformly
Ngày tải lên: 13/08/2014, 05:22
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 7 doc
... devices are with n+ polysilicon gates. While curves (a), (b) and (c) are for channel implanted devices, curve (d) is for uniformaly doped device. Although both curves (b) and (c) are for enhance- ... capacitance and is obtained by differentiating the bulk charge Qb. For example, for a uniformly doped substrate, we can write (5.110) YCOX Cd = 2d+Ti,b' On the other hand, Yang and Chaterjee's ... voltage with drain voltage at two different back bias V,, = 0 and 3 V with channel length as a parameter for a typical n-channel 1 pm CMOS process A slightly different form for the
Ngày tải lên: 13/08/2014, 05:22
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx
... and have made use of Eq. (6.23) for y and Eq. (6.22) for Vq!. Remembering that Vcb(y = 0) = V,b and Vcb(y = L) = V,b+ V,,, the inversion charge Qis and Qid at the source and ... associated with this trap is in parallel with the depletion layer capacitance cd, and therefore Eq. (6.102) becomes (6.103) This is the equation for r] used in SPICE model Levels 2 and ... between 0 and 0.5 and represents the contribution to the field due to drain voltage The exponent v is approximately 0.25 for n-channel and 0.15 for p-channel devices [SO] For devices
Ngày tải lên: 13/08/2014, 05:22
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 9 potx
... X,, and X,, are the source and drain depletion widths, respectively, at the surface, given by Leff = L - Xs, - X,, (6.211b) and (6.211~) [...]... uniformly and nonuniformly ... model... on MOS device and circuit performance’, IEEE Trans Electron Devices, ED-31, pp 138 6-1 396 ( 198 4) [90 ] B Hoefflinger, H Sibbert, and G Zimmer, ‘Model and performance of hot electron ... and M Sharma, MOSFET substrate current model for circuit simulation , IEEE Trans Electron Devices, ED-38, pp 1 39 2-1 398 ( 199 1) 1 891 C G Sodini, P K KO ,and J... J Solid-state and
Ngày tải lên: 13/08/2014, 05:22
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 10 pot
... normalized source and drain charges, Qs and Qd, respectively, as a function of Vds for different Vgs, with and without velocity saturation... V,, = 4.6 and 3.8 V and V,, = OV for a typical ... integration formula. Note The subscript j stands for G, S, D or B for the charge Q and capacitance C, as we are now dealing with the total charge or total capacitance. However, for ... L, and V = Vd,, so that we have Now combining Eq. (7.53) with Eqs. (7.50) and (7.54) and carrying out the integration, we get after lengthy algebra the following expression for QD and
Ngày tải lên: 13/08/2014, 05:22
Building Software for Simulation: Theory and Algorithms, with Applications in C++ doc
... Cataloging-in-Publication Data: Nutaro, James J. Building software for simulation: theory and algorithms with applications in C++ / James J. Nutaro p. cm. Includes bibliographical references and index. ISBN 978-0-470-41469-9 ... components to inputs for its other components and outputs from itself, and for transforming its inputs into input for its components. Algorithms for event scheduling, numerical integration, and other necessary ... implemented by the software that uses the simulation engine. This Building Software for Simulation: Theory and Algorithms, with Applications in C++, By James J. Nutaro Copyright C 2011 John Wiley...
Ngày tải lên: 29/03/2014, 22:20
15 Estimation Theory and Algorithms: From Gauss to Wiener to Kalman
... isin a form ready to be processedby discrete-timeestimation algorithms; and (2) the mathematics associatedwith discrete-time estimation theory is simpler than with continuous- time estimation theory. ... with mean m x (0) and covariance P x (0), and x(0) is not correlated with w(k) and v(k). The dimensions of matrices , , , H, Q, and R are n × n, n × p, n × l, m × n, p × p, and m × m, respectively. ... is short for dx(t)/dt; both f and h are continuous and continuously differentiable with respect to all elements of x and u; w(t) is a zero-mean continuous-time white noise process, with E{w(t)w (τ...
Ngày tải lên: 08/11/2013, 12:15
SIEMENS - simatic standard software for S7-300 and S7-400 PID control ppt
... and input COM_RST is set to TRUE. Control Loop Block call and Connection Function Blocks vi Standard Software for S7-300 and S7-400 – PID Control C79000-G7076-C516-01 3-16 Standard Software for ... graphics/tables: A-2 Standard Software for S7-300 and S7-400 – PID Control C79000-G7076-C516-01 3-9 Standard Software for S7-300 and S7-400 – PID Control C79000-G7076-C516-01 3.2 Step Control with FB42 “CONT_S” FB42 ... block does not check for errors internally. The error output parameter RET_VAL is not used. Modes Error Information Function Blocks Index-2 Standard Software for S7-300 and S7-400 – PID Control C79000-G7076-C516-01 Index 3-17 Standard...
Ngày tải lên: 22/03/2014, 23:20
SIEMENS - simatic standard software for S7-300 and S7-400 standard functions part 2 ppt
... Information Example Table Functions 1-10 Standard Software for S7-300 and S7-400 Standard Functions Part 2 A5E00066867-03 Bit Lo g ic Functions 6-13 Standard Software for S7-300 and S7-400 Standard ... instruction executes without error; see Error Information for values other than W#16#0000 Description Parameters Convert Functions and Function Block 6-9 Standard Software for S7-300 and S7-400 Standard ... ENO is set to 0 and ERR_CODE is set equal to W#16#0009. Parameters Error Information Convert Functions and Function Block 6-10 Standard Software for S7-300 and S7-400 Standard Functions...
Ngày tải lên: 29/03/2014, 12:20
Nonlinear Model Predictive Control: Theory and Algorithms (repost)
... Ugrinovski and Andrey V. Savkin Model Reduction for Control System Design Goro Obinata and Brian D.O. Anderson Control Theory for Linear Systems Harry L. Trentelman, Anton Stoorvogel and Malo Hautus Functional ... (2.29) for x ∈ and t ≥ 0 together with the initial condition y(0,x) = y 0 (x) and the boundary conditions y(t,0) =y(0,L)=0. Here y t and y x denote the partial derivatives with respect to t and ... coordinates x 1 and x 2 correspond to the (transformed) x position of P and its velocity of the platform in direction x whereas x 3 and x 4 represent the (transformed) y position of P and the respective velocity....
Ngày tải lên: 11/06/2014, 08:23
Tài liệu Java EE 6 Cookbook for Securing, Tuning, and Extending Enterprise Applications docx
... performance and debugging of Java EE applications. The solutions described will help in understanding performance-related issues in a Java EE application and ways to identify the cause. Performance ... and configuration, and recipes that will help you debug problems and enhance the performance of your applications. What This Book Covers Chapter 1, Out with the Old, In with the New: This ... For More Information: www.packtpub.com/java-ee6-securing-tuning-extending-enterprise- applications- cookbook/book Chapter 8, Performance and Debugging: This chapter consists of recipes for...
Ngày tải lên: 22/02/2014, 00:20
Java EE 6 Cookbook for Securing, Tuning, and Extending Enterprise Applications pdf
... Performance and Debugging: This chapter consists of recipes for solving issues related to the performance and debugging of Java EE applications. The solutions described will help in understanding ... 4.0 and Oracle JDeveloper for J2EE Development, Processing XML documents with Oracle JDeveloper 11g, and EJB 3.0 Database Persistence with Oracle Fusion Middleware 11g. Out with the Old, In with ... requirement in many applications handling long-running tasks, or for tasks that are re -and- forget, where you might be able to increase response time: Justin Zealand assisted with the iOS section...
Ngày tải lên: 06/03/2014, 03:20
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