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13/08/2014, 05:22
... Eqs (6.142), (6.174) and (6.204) for p,, Vds,, and ld, respectively The corresponding I d , - Vd, and I,, - Vgscharacteristics for n-channel device are shown in Figures 6.34b and 6.34c, respectively ... device and circuit performance’, IEEE Trans Electron Devices, ED-31, pp 1386-1396 (1984) [90] B Hoefflinger, H Sibbert, and G Zimmer, ‘Model and performance of hot electron MOS transistor for VLSI’, ... this is true only for a uniformly doped substrate For practical MOSFET’s which are nonuniformly doped, y is bias dependent as was discussed in Chapter Therefore, proper y value and derivative need...