hastelloy® x alloy by selective laser melting technology

Phase transition of Cu2O to CuO nanocrystals by selective laser heating

... in the product, which may exist in form of Cu2O/CuO core/shell structure as suggested by Raman spectra with different excitation wavelength Rapid thermal treatment by laser seems to be a good way ... post annealing was done by shining a laser beam of high density on the sample and the phase transition was observed – in situ by Raman spectra The main advantage that laser annealing offers over ... cubic law [15] or most recently by the logarithmic law suggested by Zhu et al [16] The logarithmic oxidation rate law results from grain-boundary diffusion in the oxide layers According to Zhu et...

4
139
0

Tài liệu selective catalytic reduction technology for the control of nitrogen oxide ppt

Danh mục: Hóa học - Dầu khí

...

28
452
2

beam propagation modeling of modified volume fresnel zone plates fabricated by femtosecond laser direct writing

Danh mục: Vật lý

... experiments are explained in [2] The actual phase modulation induced by each FZP is the amount of refractive index change multiplied by the thickness of the FZP layer, which depends on the laser ... numerical method for simulation of focusing by VFZPs The 10 P Srisungsitthisunti, O K Ersoy, and X Xu, “Volume Fresnel zone plates fabricated by femtosecond laser direct writing,” Appl Phys Lett 90, ... integral Therefore, FZP diffraction by the Hankel BPM can be veriﬁed by comparing it to the RS diffraction result The RS integral is given by [9] U͑P0͒ = j␭ ͵͵ U͑P1͒ exp͑jkr͒ r ជ ជ cos͑n,r͒ds ͑2͒ s...

7
348
1

measurement of solid liquid interface temperature during pulsed excimer laser melting of polycrystalline silicon films

Danh mục: Vật lý

... Comparison between the measured and calculated melting duration ͑c͒ Calculated maximum melting velocity and ͑d͒ calculated maximum melting depth at different laser ﬂuences duration Here we compare the ... slightly with ﬂuence; the excess laser energy is consumed by the latent heat of vaporization The experimental results show that the maximum surface temperature at the laser ﬂuence of 0.95 J/cm2 ... sample is examined by measuring the surface reﬂectance The surface reﬂectivity measurement also yields the melting duration due to a large reﬂectance increase of silicon upon melting The melting...

3
170
0

origin of coherent phonons in bi2te3 excited by ultrafast laser pulses

Danh mục: Vật lý

... 33 Y.-Y Li, G Wang, X. -G Zhu, M.-H Liu, C Ye, X Chen, Y.-Y Wang, K He, L.-L Wang, X. -C Ma, H.-J Zhang, X Dai, Z Fang, X. -C Xie, Y Liu, X. -L Qi, J.-F Jia, S.-C Zhang, and Q.-K Xue, Adv Mater 22, ... the possibility that the observed A1g modes are generated by initially excited Eg phonons or directly excited by the polarization force, experiments were carried out on samples with thinner thicknesses, ... are the maximum temperature and the initial temperature, respectively The maximum electron temperature Te, max is then estimated as Te, max = [4εF αF /π ne δs ]1/2 /kB , where Te, max is assumed...

6
345
0

origin of coherent phonons in bi2te3 excited by ultrafast laser pulses

Danh mục: Vật lý

... 33 Y.-Y Li, G Wang, X. -G Zhu, M.-H Liu, C Ye, X Chen, Y.-Y Wang, K He, L.-L Wang, X. -C Ma, H.-J Zhang, X Dai, Z Fang, X. -C Xie, Y Liu, X. -L Qi, J.-F Jia, S.-C Zhang, and Q.-K Xue, Adv Mater 22, ... the possibility that the observed A1g modes are generated by initially excited Eg phonons or directly excited by the polarization force, experiments were carried out on samples with thinner thicknesses, ... are the maximum temperature and the initial temperature, respectively The maximum electron temperature Te, max is then estimated as Te, max = [4εF αF /π ne δs ]1/2 /kB , where Te, max is assumed...

6
370
0

thermoelastic wave induced by pulsed laser heating

Danh mục: Vật lý

... T β ˙ + = + (I(t) + τq I(t)) e− x α ∂t α ∂t x k BβT T0 ∂ u ∂3u − + τq , k x t x t ∂2u ∂2u ∂T = B+ G − BβT ∂t x x ˙ (β/k)τq I(t) exp(− x) , which is induced by the non-Fourier effect, and ... extra source terms in (1a) One is θ =0 ∂θ =0 ∂t u=0 ∂u =0 ∂t ∂θ =0 x ∂u + νθ = x at t = 0, x ≥ , (3a) at t = 0, x ≥ , (3b) at t = 0, x ≥ , (3c) at t = 0, x ≥ , (3d) at x = 0, t > , (3e) at x ... γ(I(t) + τq I(t)) e− x + α ∂t α ∂t x ∂2u ∂3u − εT − εT τq , x t x t 2 ∂ u ∂θ ∂ u = +ν ∂t ce x x (2a) (2b) The initial and boundary conditions described above are expressed as Theoretical...

8
497
0

volume fresnel zone plates fabricated by femtosecond laser direct writing

Danh mục: Vật lý

... sample was irradiated by 90 fs pulses delivered by a Ti:sapphire ampliﬁed laser system at a central wavelength of 800 nm and kHz repetition rate The laser beam was attenuated by a polarizer before ... the index of refraction was induced over a long length which is determined by the Rayleigh range,8 i.e., a 100 ␮m-long ﬁlament of refractive index change was produced by each pulse The maximum ... and writing speed We fabricated phase zone plates by utilizing the change of the index of refraction induced in the medium by the femtosecond laser beam Using the 5ϫ objective lens, we fabricated...

3
185
0

controllable growth offlowerlike zno nanostructures by combining laser direct

Danh mục: Cao đẳng - Đại học

... [23] Guo XD, Li RX, Hang Y, Xu ZZ, Yu BK, Dai Y, et al Appl Phys A 2009;94:423–6 [24] Guo XD, Li RX, Hang Y, Xu ZZ, Yu BK, Ma HL, et al Mater Lett 2008;62:1769–71 [25] Xu F, Lu YN, Xie Y, Liu ... obtained ﬂower was approximately 10 μm and the ﬂower consisted of 2D nanosheets Here, the substrate was irradiated by 20 fs laser pulses with an energy of μJ There were laser induced nanoripples ... while the laser wavelength is 800 nm, thus two-photon absorption took place during the irradiation of laser pulses The PMMA at the laser illuminated regions was ablated, thus GaN was exposed to...

5
269
0

SEMICONDUCTOR LASER DIODE TECHNOLOGY AND APPLICATIONS potx

Danh mục: Điện - Điện tử

... (m/s) 3, 0x1 0 -3 GaN x= 0.2 x= 0.4 x= 0.5 x= 0.6 x= 0.8 AlN 2, 5x1 0 x= 1 x= 0.8 x= 0.6 x= 0.5 x= 0.4 x= 0.2 x= 0 2, 0x1 0 1, 5x1 0 1, 0x1 0 200 400 600 800 Applied electric field (kV/cm) 1000 5, 0x1 0 50 100 150 200 250 ... 3, 5x1 0 3, 5x1 0 InGaN, T=77 K InGaN, T=500 K 5 3, 0x1 0 Electron drift velocity (m/s) Electron drift velocity (m/s) 3, 0x1 0 2, 5x1 0 x= 1 x= 0.8 x= 0.6 x= 0.5 x= 0.4 x= 0.2 x= 0 2, 0x1 0 1, 5x1 0 1, 0x1 0 5, 0x1 0 ... 5 2, 5x1 0 2, 0x1 0 1, 5x1 0 1, 0x1 0 3, 5x1 0 200 400 600 800 3, 0x1 0 2, 5x1 0 2, 0x1 0 5 AlGaN, T=1000 K 5 1, 5x1 0 GaN x= 0.2 x= 0.4 x= 0.5 x= 0.6 x= 0.8 AlN AlGaN, T=700 K Electron drift velocity (m/s) 3, 0x1 0 Electron...

388
405
0

LASER SCANNER TECHNOLOGY potx

Danh mục: Kĩ thuật Viễn thông

... distortion B can be computed by the next expression B  ( xB  xc )( ki  kui ) , ki (16) From the terms si=(xA–xc) and Si=( XA –xc)-( XB –xc)=(xA–xc)+(A-B), the expression Si = si + (A-B) ... displacement is defined by Si=(XA – xc)-(XB – xc) Therefore, the projection ki Eq.(11) is rewritten by kui   ( X B  xc )hi  f [( X A  xc )  Si ]hi f (12) From Eq.(12) f, , xc, XA are constant ... ki   ( xB  xc )hi f  [( x A  xc )  si ]hi f (11) Foot Sole Scanning by Laser Metrology and Computer Algorithms Considering radial distortion, XA = xA + A and XB = xB + B, where x is the...

270
262
0

báo cáo khoa học: "Journal of Hematology & Oncology BioMed Central Short report Open Access Detection of NPM1 exon 12 mutations and FLT3 – internal tandem duplications by high resolution melting analysis in normal karyotype acute myeloid leukemia" docx

Danh mục: Báo cáo khoa học

... subjected to melting in the presence of a dye that only fluoresces when bound to double stranded DNA [11] As melting is sequence dependent, monitoring the precise melting behaviour by observing ... NPM1 mutations and FLT3-ITD using high resolution melting analysis (A) The melt curve of NPM1 exon 12 and (B) The difference plot of NPM1 exon 12 Six patient samples are shown in comparison to five ... (#33 and #43) are NPM1 mutation negative (C) The melt curve of FLT3 exon 14 and (D) The difference plot of FLT3 exon 14 - Six patient samples are shown in comparison to five normal controls Three...

5
236
0

Báo cáo y học: " Fibrolipoma of the lip treated by diode laser surgery: A case report" pps

Danh mục: Báo cáo khoa học

... only after histological examination Liposarcoma of the oral cavity is exceedingly rare [5], but this entity cannot be distinguished from its benign counterpart at clinical examination Therefore, ... surgery, laser excision seems more convenient in view of several intra-operative advantages (such as the lack of bleeding, no requirement for suture) and postoperative advantages (for example, ... thermal cut of the diode laser are usually negligible, as noted in the current study, thus allowing adequate histological examination and correct diagnosis Conclusion Diode laser surgery for the...

3
292
0

báo cáo khoa học: " Simultaneous mutation detection of three homoeologous genes in wheat by High Resolution Melting analysis and Mutation Surveyor®" pot

Danh mục: Báo cáo khoa học

... functional domain of all three homoeologous genes in hexaploid wheat HRM analysis is an extension of previous DNA melting (dissociation) analysis enabled by the new generation of fluorescent dsDNA dyes ... analysed by HRM using ABDF6 and ABDR1 as primers Each reaction was duplicated Figure shows the normalized melting curve, difference plot and derivative melting curve of ABD6-1 In the derivative melting ... SNPs among the three loci Despite the complex melting behavior, all mutants tested had shifts in melting peaks from that of the non-mutant The normalized melting curve (Figure 4A) and the difference...

12
468
0

Báo cáo khoa học:" The directionality of the nuclear transport of the influenza A genome is driven by selective exposure of nuclear localization sequences on nucleoprotein" pptx

Danh mục: Báo cáo khoa học

... Subsequently, the newlyassembled vRNPs use the cellular export receptor CRM1 to exit the nucleus through the nuclear pore complexes [11-13] Nuclear-exported vRNPs are different from incoming vRNPs in ... vRNPs by possessing differential exposure To test this hypothesis, we analyzed the exposure of the NLSs on NP in tissue culture cells infected with influenza A virus We found that an exposed ... once the progeny vRNPs undergo nuclear export Hidden NLSs on the nuclear-exported vRNPs prevents the nuclear re-entry of the progeny vRNPs This selective exposure and masking of NLS1 on vRNPs thus...

12
196
0

Instrumental and Chemometric Analysis of Automotive Clear Coat Paints by Micro Laser Raman and UV Microspectrophotometry

Danh mục: Y khoa - Dược

... Equation 1.1, where x and y are two points, (x – y)’ is the transpose of the matrix (x – y), and dxy is the distance between them.12,15 The smaller the value of 𝑑 𝑥𝑦 = �(𝑥 − 𝑦)′ (𝑥 − 𝑦) dxy, the more ... cross-linking hydroxyl-functional polymers.1,3 Figure 1.1 Examples of UV absorber types used in clear coats: (a) hydroxyphenylbenzotriazole; (b) benzophenone; (c) oxanilide; and (d) hydroxyphenyl-S-triazine ... differences in means by examining between-groups and within-groups variability.12,30 It determines whether the difference between sample means exceeds what can be explained by random error.26 ANOVA...

203
310
0

DEFECT INDUCED NOVEL ELECTRICAL, MAGNETIC AND OPTICAL PROPERTIES OF TIO2 THIN FILMS GROWN BY PULSED LASER DEPOSITION

Danh mục: Ngữ pháp tiếng Anh

... dioxide (TiO2) thin films grown by pulsed laser deposition (PLD) technique Single crystal TiO2 and tantalum (Ta) doped TiO2 (Ti1-xTaxO2) thin films of different thicknesses were grown epitaxially ... involved in the laser- target interaction is extremely complex It depends critically on the laser beam Laser Heater plume Target Substrate Figure : Schematic diagram of a pulsed laser deposition ... reported by Zhang25 They observed signatures of Kondo effect below 100 K in 5% Nb doped anatase TiO2 thin films grown under 10-4 Torr oxygen partial pressure by pulsed laser deposition (PLD) Using XAS...

142
339
0

Ultrafast dynamics and phase changes in phase change materials triggered by femtosecond laser

Danh mục: Cao đẳng - Đại học

... 5.6), corresponding to excitation fluence of 60, 45 and 20 mJ/cm2, respectively Note the logarithmic time xi List of Figures axis; the true zero delay (see text) is marked by an arrow ∆I=[I(t)-Ia]/Ia ... smaller than the laser beam size, this is because of the Gaussian distribution of the laser beam Figure 2.2 (b) shows the gaussain distribution of laser beam Intensity Laser power 10 mW Melting point ... ZnS has a large refractive index of 2.4 which permits better laser spot size resolution while its high melting point of 1700 °C ensures that it is not melted by the laser heat SiO2 is added into...

158
553
0

Structure and properties of lead zirconate titanate thin films by pulsed laser deposition

Danh mục: Cao đẳng - Đại học

... effect) is usually represented by d33, defined by Δz = d 33 E Z z0 (1.6) The elongation in the x- direction (for transverse effect) is given by d31, x ⎛ Δy ⎞ ⎜= ⎟ = d 31 E Z x0 ⎜ y ⎟ ⎝ ⎠ (1.7) Voltage ... due to the lack of suitable laser source Only after the advancement of the laser technology in the 1970’s, when powerful UV laser using excimer gases that has shorter laser pulse (< 10 ns) and ... Chapter Apparatus and experiment procedures cm The chamber can be pumped down to a vacuum of around 1×10-6 mbar by a turbo molecular pump backed by a rotary pump Mirror KrF Excimer Laser (248 nm) Lens...

119
604
0

Room temperature ferromagnetism study of tio2 based magnetic semiconductors by pulsed laser deposition

Danh mục: Kỹ thuật - Công nghệ

... certain growth condition, was reported by Zhang et al [90] Using X- ray absorption spectroscopy (XAS) and X- ray photoemission spectroscopy (XPS), supported by first-principles calculations, it is ... localized spin is introduced in the oxide semiconductor The choice of oxide hosts was motivated to a great extend by the prediction of a TC above 300K in Mn-doped ZnO by Dietl et al [22] This prediction ... issues In order to exclude the extrinsic room temperature ferromagnetic induced by magnetic metal dopants, recently, researchers focused on functional oxide semiconductors doped by the non-magnetic...

116
407
0