automatic test pattern generation vlsi design

... Li’l Abner. The test plots may have received their name because they resembled shmoos. See Baker and van Beers, “Shmoo Plotting: The Black Art of IC Testing,” IEEE Design and Test of Computers, ... ell p-select n-select metal1 active contact V DD CHAPTER 4 SOLUTIONS 9 4.11 D = N(GH) 1/N + P. Compare in a spreadsheet. Design (b) is fastest for H = 1 or 5. Design (d) is fastest for H = 20 because it has a lower logical effort and more stages ... 40960. The best number of stages is log 4 F = 7.66, so try an 8-stage design: NAND3-INV-NAND2- INV-NAND2-INV-INV-INV. This design has an actual logical effort of G = (5/3) * (4/3) * (4/3) = 2.96,...

Ngày tải lên: 19/02/2014, 15:20

... ACM 978-1-59593-734-6/07/0007 $5.00. Keywords: directed random testing, database applica- tions, automatic test generation, concolic testing. 1. INTRODUCTION Programs that interact with database ... augmented with automatically generated tests. Automatic test gen- eration has received a lot of research attention, and there are several algorithms and implementations that generate test suites. ... and a tool for the automatic generation of test input data for database applications. Given a program which makes calls to a database through an API, we automatically generate test inputs for the...

Ngày tải lên: 07/03/2014, 14:20

... CMOS VLSI Design A Circuits and Systems Perspective, Addison Wesley, 2010 2. Tống Văn On, Thiết kế vi mạch CMOS VLSI - tập 1, NXB Phương Đông, 2007 3. Tống Văn On, Thiết kế vi mạch CMOS VLSI ... Office: 116B1, IC Design Lab, Monday 9-11am 2 Bộ môn Kỹ Thuật Điện Tử Course Outcomes • Understand CMOS transistor • Understand transistor layout and fabrication • Able to design logic gates ... fabrication • Able to design logic gates from transistors • Able to design a CMOS IC with Verilog language • Able to optimize architecture of the design 5 Bộ môn Kỹ Thuật Điện Tử Course Preparation • Textbooks: –...

Ngày tải lên: 10/03/2014, 08:20

... conducting manufacturing related test and so on. Third, design target is different. In reuse-based design, design for reuse becomes a critical design objective for all designs. As suggested in the ... Redundant pattern encoding “wallpapers” the original image with the Design Security: from the Point of View of An Embedded System Designer 7 made the greatest contribution in improving the design ... their applicability to VLSI design IP protection. 1. Network Security and Privacy Protection The reuse-based design methodology forces designers to cooperate beyond their design team/company. The...

Ngày tải lên: 16/03/2014, 12:20

... process CMOS VLSI Design 4th Ed. 0: Introduction 31 Polysilicon Patterning  Use same lithography process to pattern polysilicon Polysilicon p substrate Thin gate oxide Polysilicon n well CMOS VLSI Design ... oxide n well n+n+ n+ p+p+p+ Contact CMOS VLSI Design 4th Ed. 0: Introduction 40 Simplified Design Rules  Conservative rules to get you started CMOS VLSI Design 4th Ed. 0: Introduction 6 nMOS ... Diffusion p+ Diffusion n well CMOS VLSI Design 4th Ed. 0: Introduction 35 N-diffusion cont.  Strip off oxide to complete patterning step n well p substrate n+n+ n+ CMOS VLSI Design 4th Ed. 0: Introduction...

Ngày tải lên: 19/03/2014, 10:20

... VLSI Design 4th Ed. 1: Circuits & Layout 2 Outline  A Brief History  CMOS Gate Design  Pass Transistors  CMOS Latches & Flip-Flops  Standard Cell Layouts  Stick Diagrams CMOS VLSI ... transistors Courtesy Texas Instruments [Trinh09] © 2009 IEEE. CMOS VLSI Design 4th Ed. 1: Circuits & Layout 39 Example: Inverter CMOS VLSI Design 4th Ed. 1: Circuits & Layout 37 Nonoverlapping ... flip-flop Flop CLK D Q D CLK Q CMOS VLSI Design 4th Ed. 1: Circuits & Layout 5 Annual Sales  >10 19 transistors manufactured in 2008 – 1 billion for every human on the planet CMOS VLSI Design 4th Ed. 1:...

Ngày tải lên: 19/03/2014, 10:20

... CMOS VLSI DesignCMOS VLSI Design 4th Ed. 3: CMOS Transistor Theory 6 nMOS Cutoff  No channel  I ds ≈ 0 + - V gs = 0 n+ n+ + - V gd p-type body b g s d CMOS VLSI DesignCMOS VLSI Design 4th ... ∆V – Capacitance and current determine speed Lecture 3: CMOS Transistor Theory CMOS VLSI DesignCMOS VLSI Design 4th Ed. 3: CMOS Transistor Theory 5 Terminal Voltages  Mode of operation depends ... operation – Cutoff – Linear – Saturation V g V s V d V gd V gs V ds + - + - + - CMOS VLSI DesignCMOS VLSI Design 4th Ed. 3: CMOS Transistor Theory 11 Carrier velocity  Charge is carried by...

Ngày tải lên: 19/03/2014, 10:20

... Effect CMOS VLSI DesignCMOS VLSI Design 4th Ed. 4: Nonideal Transistor Theory 16 Body Effect Cont.  For small source-to-body voltage, treat as linear CMOS VLSI DesignCMOS VLSI Design 4th Ed. 4: ... voltage CMOS VLSI DesignCMOS VLSI Design 4th Ed. 4: Nonideal Transistor Theory 8 Mobility Degradation  High E vert effectively reduces mobility – Collisions with oxide interface CMOS VLSI DesignCMOS VLSI ... 1.98 0 C T 1.8 70 C S 1.62 125 C CMOS VLSI DesignCMOS VLSI Design 4th Ed. 4: Nonideal Transistor Theory 7 Coffee Cart Analogy  Tired student runs from VLSI lab to coffee cart  Freshmen are...

Ngày tải lên: 19/03/2014, 10:20

... VLSI DesignCMOS VLSI Design 4th Ed. 5: DC and Transient Response 36 Layout Comparison  Which layout is better? A V DD GND B Y A V DD GND B Y Lecture 5: DC & Transient Response CMOS VLSI ... insight I dsn I dsp V out V DD V in CMOS VLSI DesignCMOS VLSI Design 4th Ed. 5: DC and Transient Response 10 Current vs. V out , V in V in5 V in4 V in3 V in2 V in1 V in0 V in1 V in2 V in3 V in4 I dsn , |I dsp | V out V DD CMOS VLSI ... delay of a fanout-of-1 inverter C C R 2C 2C R 2 1 A Y C 2C C 2C C 2C R Y 2 1 d = 6RC CMOS VLSI DesignCMOS VLSI Design 4th Ed. 5: DC and Transient Response 33 Delay Components  Delay has two parts –...

Ngày tải lên: 19/03/2014, 10:20

... body bias in active mode CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 2 Outline  Power and Energy  Dynamic Power  Static Power CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 19 Voltage ... determining if block will be used Lecture 6: Power CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 15 Switching Probability CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 16 Example  A 4-input ... = ∫ CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 13 Dynamic Power Reduction   Try to minimize: – Activity factor – Capacitance – Supply voltage – Frequency 2 switching DD P CV f α = CMOS VLSI...

Ngày tải lên: 19/03/2014, 10:20

... Predicate-Argument patterns and Chain-model patterns that contribute to the extraction task. (d) Subtree model patterns that contribute the extraction task. creases. In particular, many of the pattern candidates overlap ... extraction patterns, if pattern A subsumes pattern B (say, A is (shoot ( C-PERSON -OBJ)(to death)) and B is (shoot ( C- PERSON -OBJ))), there is no added contribution for extraction by pattern matching ... document set from the one used for pattern learning. The pattern match- ing system, given a set of extraction patterns, clas- sifies a document as retrieved if any of the patterns match any portion of...

Ngày tải lên: 23/03/2014, 19:20

... cells [10]. In the ventral tegmental area and the substantia ni- gra, the pattern of iCre expression was similar to the pattern of expression of the endogenous DAT gene reported in previous in ... Authors Journal compilation ª 2007 FEBS 3573 Analysis of dopamine transporter gene expression pattern ) generation of DAT-iCre transgenic mice Marc Turiault 1, *, Se ´ bastien Parnaudeau 1, *, Aude ... and A10 nuclei (Fig. 1B). Cre-mediated recombination pattern We investigated the distribution of Cre expression and the DNA recombination pattern in the transgenic mouse line, by analyzing one...

Ngày tải lên: 30/03/2014, 08:20

... Qe ECE 410, Prof. A. Mason Lecture Notes 6.31 Junction Areas • Note: calculations assume following design rules –poly size, L = 2λ – poly space to contact, 2λ –contact size, 2λ –active overlap of...

Ngày tải lên: 28/04/2014, 11:04

... (c i+1 Æ c i ) • 4b Dynamic Manchester Carry Generation – minor ripple delay – threshold drop on propagate – very few transistors single bit carry generation in dynamic logic a i b i c i c i+1 0 ... active x = disabled alternative design: - do not add pMOS M3 - make W of M1 significantly larger than W of M4 Æ C i will override VDD • Corrected Manchester Carry Generation Circuit M4 M3 M2 M1 ECE ... carry under certain conditions and skip the carry -generation block • recall c i+1 = g i + c i •p i, g i = a i •b i , p i = a i ⊕ b i • note generation of p i is more complex (XOR) than g i (AND) –so,...

Ngày tải lên: 28/04/2014, 11:04

... outputs feed row drivers • buffers to drive large WL capacitance •Physical Design – layout scheme matches regular patterning shown in schematic • horizontal and vertical routing Expanded Core ... control voltage ECE 410, Prof. A. Mason Lecture Notes 13.10 SRAM Block Architecture • Example: 2-Core design –core width = k•n • n = SRAM word size; 8, 16, etc. • k = multiplier factor, 2,3,4,etc. – ... bitlinelines – Æ lower speed and higher power consumption • Multi-port SRAM options for ECE410 Design Project –Two ports • 1 port read and write • 1 port read only –Three ports • 2 ports for...

Ngày tải lên: 28/04/2014, 11:04

Ngày tải lên: 28/04/2014, 11:04

Ngày tải lên: 28/04/2014, 11:04

Ngày tải lên: 28/04/2014, 11:04

Ngày tải lên: 28/04/2014, 11:04

Ngày tải lên: 28/04/2014, 11:04