automatic test pattern generation vlsi design

Tài liệu Solutions for CMOS VLSI Design 4th Edition (Odd). ppt

... Li’l Abner. The test plots may have received their name because they resembled shmoos. See Baker and van Beers, “Shmoo Plotting: The Black Art of IC Testing,” IEEE Design and Test of Computers, ... ellp-selectn-selectmetal1activecontactVDDCHAPTER 4 SOLUTIONS94.11 D = N(GH)1/N + P. Compare in a spreadsheet. Design (b) is fastest for H = 1 or 5. Design (d) is fastest for H = 20 because it has a lower logical effort and more stages ... 40960. The best number of stages is log4F = 7.66, so try an 8-stage design: NAND3-INV-NAND2-INV-NAND2-INV-INV-INV. This design has an actual logical effort of G = (5/3) * (4/3) * (4/3) = 2.96,...

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Dynamic Test Input Generation for Database Applications pot

Danh mục: Cơ sở dữ liệu

... ACM 978-1-59593-734-6/07/0007 $5.00.Keywords: directed random testing, database applica-tions, automatic test generation, concolic testing.1. INTRODUCTIONPrograms that interact with database ... augmentedwith automatically generated tests. Automatic test gen-eration has received a lot of research attention, and thereare several algorithms and implementations that generate test suites. ... and a tool for the automatic generation of test input data for database applications.Given a program which makes calls to a database through anAPI, we automatically generate test inputs for the...

VLSI DESIGN Thiết kế vi mạch số - Chapter 0: Course Introduction docx

Danh mục: Điện - Điện tử

... CMOS VLSI Design A Circuits and Systems Perspective, Addison Wesley, 20102. Tống Văn On, Thiết kế vi mạch CMOS VLSI - tập 1, NXB Phương Đông, 20073.Tống Văn On, Thiết kế vi mạch CMOS VLSI ... Office: 116B1, IC Design Lab, Monday 9-11am2Bộ môn Kỹ Thuật Điện TửCourse Outcomes• Understand CMOS transistor• Understand transistor layout and fabrication• Able to design logic gates ... fabrication• Able to design logic gates from transistors• Able to design a CMOS IC with Verilog language• Able to optimize architecture of the design 5Bộ môn Kỹ Thuật Điện TửCourse Preparation• Textbooks:–...

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INTELLECTUAL PROPERTY PROTECTION IN VLSI DESIGNS pdf

Danh mục: Cao đẳng - Đại học

... conducting manufacturingrelated test and so on. Third, design target is different. In reuse-based design, design for reuse becomes a critical design objective for all designs.As suggested in the ... Redundant pattern encoding “wallpapers” the original image with the Design Security: from the Point of View of An Embedded System Designer7made the greatest contribution in improving the design ... their applicabilityto VLSI design IP protection.1.Network Security and Privacy ProtectionThe reuse-based design methodology forces designers to cooperate beyondtheir design team/company. The...

CMOS VLSI Design - Lecture 1: Introduction ppt

Danh mục: Điện - Điện tử

... processCMOS VLSI Design 4th Ed.0: Introduction 31Polysilicon Patterning Use same lithography process to pattern polysiliconPolysiliconp substrateThin gate oxidePolysiliconn wellCMOS VLSI Design ... oxiden welln+n+n+p+p+p+ContactCMOS VLSI Design 4th Ed.0: Introduction 40Simplified Design Rules Conservative rules to get you startedCMOS VLSI Design 4th Ed.0: Introduction 6nMOS ... Diffusionp+ Diffusionn wellCMOS VLSI Design 4th Ed.0: Introduction 35N-diffusion cont. Strip off oxide to complete patterning stepn wellp substraten+n+n+CMOS VLSI Design 4th Ed.0: Introduction...

CMOS VLSI Design - Lecture 2: Circuits & Layout docx

Danh mục: Điện - Điện tử

... VLSI Design 4th Ed.1: Circuits & Layout 2Outline A Brief History CMOS Gate Design  Pass Transistors CMOS Latches & Flip-Flops Standard Cell Layouts Stick DiagramsCMOS VLSI ... transistorsCourtesy Texas Instruments[Trinh09]© 2009 IEEE.CMOS VLSI Design 4th Ed.1: Circuits & Layout 39Example: InverterCMOS VLSI Design 4th Ed.1: Circuits & Layout 37Nonoverlapping ... flip-flopFlopCLKD QDCLKQCMOS VLSI Design 4th Ed.1: Circuits & Layout 5Annual Sales >1019transistors manufactured in 2008– 1 billion for every human on the planetCMOS VLSI Design 4th Ed.1:...

CMOS VLSI Design - Lecture 3: CMOS Transistor Theory potx

Danh mục: Điện - Điện tử

... CMOS VLSI DesignCMOS VLSI Design 4th Ed.3: CMOS Transistor Theory 6nMOS Cutoff No channel Ids≈ 0+-Vgs = 0n+ n++-Vgdp-type bodybgsdCMOS VLSI DesignCMOS VLSI Design 4th ... ∆V– Capacitance and current determine speedLecture 3: CMOS Transistor TheoryCMOS VLSI DesignCMOS VLSI Design 4th Ed.3: CMOS Transistor Theory 5Terminal Voltages Mode of operation depends ... operation– Cutoff– Linear– SaturationVgVsVdVgdVgsVds+-+-+-CMOS VLSI DesignCMOS VLSI Design 4th Ed.3: CMOS Transistor Theory 11Carrier velocity Charge is carried by...

CMOS VLSI Design - Lecture 4: Nonideal Transistor Theory pdf

Danh mục: Điện - Điện tử

... EffectCMOS VLSI DesignCMOS VLSI Design 4th Ed.4: Nonideal Transistor Theory 16Body Effect Cont. For small source-to-body voltage, treat as linearCMOS VLSI DesignCMOS VLSI Design 4th Ed.4: ... voltageCMOS VLSI DesignCMOS VLSI Design 4th Ed.4: Nonideal Transistor Theory 8Mobility Degradation High Everteffectively reduces mobility– Collisions with oxide interfaceCMOS VLSI DesignCMOS VLSI ... 1.98 0 CT 1.8 70 CS 1.62 125 CCMOS VLSI DesignCMOS VLSI Design 4th Ed.4: Nonideal Transistor Theory 7Coffee Cart Analogy Tired student runs from VLSI lab to coffee cart Freshmen are...

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CMOS VLSI Design - Lecture 5: DC & Transient Response doc

Danh mục: Điện - Điện tử

... VLSI DesignCMOS VLSI Design 4th Ed.5: DC and Transient Response 36Layout Comparison Which layout is better?AVDDGNDBYAVDDGNDBYLecture 5: DC & Transient ResponseCMOS VLSI ... insightIdsnIdspVoutVDDVinCMOS VLSI DesignCMOS VLSI Design 4th Ed.5: DC and Transient Response 10Current vs. Vout, VinVin5Vin4Vin3Vin2Vin1Vin0Vin1Vin2Vin3Vin4Idsn, |Idsp|VoutVDDCMOS VLSI ... delay of a fanout-of-1 inverterCCR2C2CR21AYC2CC2CC2CRY21d = 6RCCMOS VLSI DesignCMOS VLSI Design 4th Ed.5: DC and Transient Response 33Delay Components Delay has two parts–...

CMOS VLSI Design - Lecture 6: Power potx

Danh mục: Điện - Điện tử

... body bias in active modeCMOS VLSI DesignCMOS VLSI Design 4th Ed.7: Power 2Outline Power and Energy Dynamic Power Static PowerCMOS VLSI DesignCMOS VLSI Design 4th Ed.7: Power 19Voltage ... determining if block will be usedLecture 6: PowerCMOS VLSI DesignCMOS VLSI Design 4th Ed.7: Power 15Switching ProbabilityCMOS VLSI DesignCMOS VLSI Design 4th Ed.7: Power 16Example A 4-input ... =∫CMOS VLSI DesignCMOS VLSI Design 4th Ed.7: Power 13Dynamic Power Reduction Try to minimize:– Activity factor– Capacitance– Supply voltage– Frequency2switching DDP CV fα=CMOS VLSI...

Báo cáo khoa học: "An Improved Extraction Pattern Representation Model for Automatic IE Pattern Acquisition" ppt

Danh mục: Báo cáo khoa học

... Predicate-Argument patterns and Chain-model patterns that contribute to the extraction task. (d) Subtreemodel patterns that contribute the extraction task.creases. In particular, many of the pattern candidatesoverlap ... extractionpatterns, if pattern A subsumes pattern B (say, A is(shoot ( C-PERSON -OBJ)(to death)) and B is (shoot ( C-PERSON -OBJ))), there is no added contribution forextraction by pattern matching ... document set fromthe one used for pattern learning. The pattern match-ing system, given a set of extraction patterns, clas-siﬁes a document as retrieved if any of the patternsmatch any portion of...

Báo cáo khoa học: Analysis of dopamine transporter gene expression pattern ) generation of DAT-iCre transgenic mice doc

Danh mục: Báo cáo khoa học

... cells [10].In the ventral tegmental area and the substantia ni-gra, the pattern of iCre expression was similar to the pattern of expression of the endogenous DAT genereported in previous in ... Authors Journal compilation ª 2007 FEBS 3573Analysis of dopamine transporter gene expression pattern ) generation of DAT-iCre transgenic miceMarc Turiault1,*, Se´bastien Parnaudeau1,*, Aude ... and A10 nuclei (Fig. 1B).Cre-mediated recombination pattern We investigated the distribution of Cre expression andthe DNA recombination pattern in the transgenicmouse line, by analyzing one...

vlsi design course lecture notes ch6

Danh mục: Vật lý

... QeECE 410, Prof. A. Mason Lecture Notes 6.31Junction Areas• Note: calculations assume following design rules–poly size, L = 2λ– poly space to contact, 2λ–contact size, 2λ–active overlap of...

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vlsi design course lecture notes ch12

Danh mục: Vật lý

... (ci+1Æ ci) • 4b Dynamic Manchester Carry Generation – minor ripple delay– threshold drop on propagate– very few transistorssingle bit carry generation indynamic logicaibicici+10 ... activex = disabledalternative design: - do not add pMOS M3- make W of M1 significantly larger than W of M4Æ Ciwill override VDD• Corrected Manchester Carry Generation CircuitM4M3M2M1ECE ... carry under certain conditions and skip the carry -generation block• recall ci+1= gi+ ci•pi, gi= ai•bi, pi= ai⊕ bi• note generation of piis more complex (XOR) than gi(AND)–so,...

vlsi design course lecture notes ch13

Danh mục: Vật lý

... outputs feed row drivers• buffers to drive large WL capacitance•Physical Design – layout scheme matches regular patterning shown in schematic• horizontal and vertical routingExpanded Core ... control voltageECE 410, Prof. A. Mason Lecture Notes 13.10SRAM Block Architecture• Example: 2-Core design –core width = k•n• n = SRAM word size; 8, 16, etc.• k = multiplier factor, 2,3,4,etc.– ... bitlinelines– Æ lower speed and higher power consumption• Multi-port SRAM options for ECE410 Design Project –Two ports• 1 port read and write• 1 port read only–Three ports• 2 ports for...