Hot carrier mechanisms in advanced NMOS transistors 9

... Conclusion 198 the gate current is mainly responsible for the shift in the worst-case hot- carrier degradation The reduction in the oxide potential barrier as indicated by the slope n, again lending support ... applied to the substrate In order to establish the main hot- carrier degradation mechanism in strained-Si, the effects related to the underlying SiGe is studied in deta...

Ngày tải lên: 14/09/2015, 14:03

... Chapter 1. 1 INTRODUCTION Impact of CMOS Technology Scaling on the Hot- Carrier Effects 1. 1 .1 Bulk Si CMOS Technology Trend 1. 1.2 The Change in CMOS Scaling Approach 1. 1.3 Hot- Carrier Degradation in ... 19 1. 2.2 Current Enhancement in Strained-Si NMOSFET 21 1.2.3 The Self-Heating Effect 27 1. 2.4 Process Induced Strain Relaxation 29 1. 3 Hot- Carrier Degradation...

Ngày tải lên: 14/09/2015, 14:03

... enhancement in strained-Si (b) improvement of Ion-Ioff characteristics in the strained-Si [71] Chapter Introduction 25 NMOS µ eff enhancement 2. 4 2. 2 2. 0 1.8 1.6 1.4 1 .2 Calculated 1.0 0.0 0.1 0 .2 0.3 ... wave function in the inversion layer than that in the bulk Si In other words, a thinner inversion layer is formed in the former [69][70] Reduction in intervalley...

Ngày tải lên: 14/09/2015, 14:03

... in the channel Thus, the incremental increase in charge-pumping current is interpreted as the interface traps present in that portion of the channel This technique was well received for hot- carrier ... probe the hot- carrier damage in regions under the spacer and that in the gate overlap The principle of this method is based on the change in resistance in the channel and...

Ngày tải lên: 14/09/2015, 14:03

... trap assisted tunneling in thin oxides by means of substrate hot electron injection experiments,” in Proc Int Electron Devices Meeting Tech Digest, pp 159-162, 2002 Chapter Hot- carrier Mechanism ... “Mechanism for hot- carrier- induced interface trap generation in MOS transistors, ” in Proc Int Electron Devices Meeting Tech Digest, pp 85-88, 1999 [27] Z Chen, P Ong, A K Myli...

Ngày tải lên: 14/09/2015, 14:03

... [22][23] This finding indicates that the SCE plays a major role in suppressing the injection of HETE in strained-Si NMOSFET Chapter Importance of Dopant Profile in Strained-Si/SiGe NMOSFET Threshold ... Profile in Strained-Si/SiGe NMOSFET 112 4.3 Injection Efficiency of High-Energy Tail Electrons As mentioned in section 3.3, the hot- carrier induced damage in bulk Si arising f...

Ngày tải lên: 14/09/2015, 14:03

... 1 36 The parameter h can be obtained by plotting Id(Vd0,Ta) as a function of Ta, and taking the slope of the linear regression line Now, assuming in the same Ta range, the drain current is a linear ... = 1.8 V) In the case for strained-Si, R increases non-linearly as Wp reduces The ratio R in strained-Si is also much larger than unity for all Wp values indicating self-heating is causin...

Ngày tải lên: 14/09/2015, 14:03

... vol 48, pp 671 - 678 , Apr 2001 Chapter Spatial Interface Damage Due to Self-heating [14] 179 D S Ang and C H Ling, A new assessment of the self-limiting hot- carrier degradation in LDD NMOSFET's ... Devices Meeting Tech Digest, pp 177 -180, 2003 [4] M F Lu, S Chiang, A Liu, S H Lu, M S Yeh, J R Hwang, T H Tang, and W T Shiau, Hot carrier degradation in novel strained-Si nMOSFETs,”...

Ngày tải lên: 14/09/2015, 14:03

... (SOI) In chapter five, the extracted value of Tch arising from this self-heating effect is ~760 °C during hot- carrier stress In the following experiment, the Ge concentration near the strained-Si ... of severe channel heating on the strained-Si/SiGe interface Thus, it is essential to examine this interface when the transistor is subjected to hot- carrier stress condition In this...

Ngày tải lên: 14/09/2015, 14:03

... The parameters of these tested wind turbines are listed in table 246 Fundamental and Advanced Topics in Wind Power Parameters wind turbine A wind turbine B wind turbine C Pitch type Fixed-pitch ... 234 Fundamental and Advanced Topics in Wind Power Vertical-axis wind turbine 2.1 Basic principle of vertical axis-machine Wind machine is a kind of energ...

Ngày tải lên: 19/06/2014, 21:20

... of infrared drying are available by Lampinen et al ( 199 1); Sakai & Hanzawa ( 199 4), Ratti & Mujumdar ( 199 5), Nowak & Lewicki ( 199 8) 332 Advanced Topics in Mass Transfer 3.7 Ultrasonic drying ... the changes in intercellular spaces during OD (Fito, 199 4; 330 Advanced Topics in Mass Transfer Fito & Pastor, 199 4; Chiralt & Fito, 2003) In figure 12, HDM is schema...

Ngày tải lên: 19/06/2014, 23:20

... University, April 199 6 Goodman D J., Borràs J., Mandayam N B & Yates R D ( 199 7), INFOSTATIONS: A New System Model for Data and Messaging Services, 47th IEEE VTC 97 , pp 96 9 -97 3, May 199 7 Grossglauser ... of the real-time and/or 298 Advanced Trends in Wireless Communications conversational/streaming part of these applications With this in mind, the spatial and temporal in...

Ngày tải lên: 19/06/2014, 23:20

... documents.4 SQL to XML As of Oracle version 9, Oracle s SQL contained functions that allow SQL programmers to generate and accept XML XML may be generated in result sets from native types in tables using ... ways of converting SQL tables into XML formats include using the functions XMLAttribute and XMLForest.5 XML to SQL Creating a SQL structure from an XML document ma...

Ngày tải lên: 08/08/2014, 18:21

... columnar-lined (Barrett’s) esophagus Comparison of population-based clinical and autopsy findings Gastroenterology 199 0 ;99 :91 8–22 32 Prach AJ, MacDonald TA, Hopwood DA, et al Increasing incidence ... for the rise in cardia cancer incidence J Natl Cancer Inst 199 9 ;91 :786 90 19 Spechler SJ Short and ultrashort Barrett’s esophagus: what does it mean? Semin Gastrointest Dis 199 7;8: 59...

Ngày tải lên: 11/08/2014, 01:22

... common indications SF in Telangiectasias and Reticular Veins J.P Henriet (30), in 199 7, first reported about the utilization of foam of POL in telangiectasias He started using it in 199 5 and reported ... GSVs treated with echo-guided injection of standardized microfoam (2) The method has been already described in a Spanish publication in 199 3 (35) In 199 9, the first paper in...

Ngày tải lên: 14/08/2014, 07:20