Hot carrier mechanisms in advanced NMOS transistors 8

... (SOI) In chapter five, the extracted value of Tch arising from this self-heating effect is ~760 °C during hot- carrier stress In the following experiment, the Ge concentration near the strained-Si ... of severe channel heating on the strained-Si/SiGe interface Thus, it is essential to examine this interface when the transistor is subjected to hot- carrier stress condition In this...

Ngày tải lên: 14/09/2015, 14:03

... Chapter 1. 1 INTRODUCTION Impact of CMOS Technology Scaling on the Hot- Carrier Effects 1. 1 .1 Bulk Si CMOS Technology Trend 1. 1.2 The Change in CMOS Scaling Approach 1. 1.3 Hot- Carrier Degradation in ... 19 1. 2.2 Current Enhancement in Strained-Si NMOSFET 21 1.2.3 The Self-Heating Effect 27 1. 2.4 Process Induced Strain Relaxation 29 1. 3 Hot- Carrier Degradation...

Ngày tải lên: 14/09/2015, 14:03

... enhancement in strained-Si (b) improvement of Ion-Ioff characteristics in the strained-Si [71] Chapter Introduction 25 NMOS µ eff enhancement 2. 4 2. 2 2. 0 1.8 1.6 1.4 1 .2 Calculated 1.0 0.0 0.1 0 .2 0.3 ... wave function in the inversion layer than that in the bulk Si In other words, a thinner inversion layer is formed in the former [69][70] Reduction in intervalley...

Ngày tải lên: 14/09/2015, 14:03

... in the channel Thus, the incremental increase in charge-pumping current is interpreted as the interface traps present in that portion of the channel This technique was well received for hot- carrier ... probe the hot- carrier damage in regions under the spacer and that in the gate overlap The principle of this method is based on the change in resistance in the channel and...

Ngày tải lên: 14/09/2015, 14:03

... trap assisted tunneling in thin oxides by means of substrate hot electron injection experiments,” in Proc Int Electron Devices Meeting Tech Digest, pp 159-162, 2002 Chapter Hot- carrier Mechanism ... “Mechanism for hot- carrier- induced interface trap generation in MOS transistors, ” in Proc Int Electron Devices Meeting Tech Digest, pp 85-88, 1999 [27] Z Chen, P Ong, A K Myli...

Ngày tải lên: 14/09/2015, 14:03

... [22][23] This finding indicates that the SCE plays a major role in suppressing the injection of HETE in strained-Si NMOSFET Chapter Importance of Dopant Profile in Strained-Si/SiGe NMOSFET Threshold ... Profile in Strained-Si/SiGe NMOSFET 112 4.3 Injection Efficiency of High-Energy Tail Electrons As mentioned in section 3.3, the hot- carrier induced damage in bulk Si arising f...

Ngày tải lên: 14/09/2015, 14:03

... 1 36 The parameter h can be obtained by plotting Id(Vd0,Ta) as a function of Ta, and taking the slope of the linear regression line Now, assuming in the same Ta range, the drain current is a linear ... = 1.8 V) In the case for strained-Si, R increases non-linearly as Wp reduces The ratio R in strained-Si is also much larger than unity for all Wp values indicating self-heating is causin...

Ngày tải lên: 14/09/2015, 14:03

... vol 48, pp 671 - 678 , Apr 2001 Chapter Spatial Interface Damage Due to Self-heating [14] 179 D S Ang and C H Ling, A new assessment of the self-limiting hot- carrier degradation in LDD NMOSFET's ... Devices Meeting Tech Digest, pp 177 -180, 2003 [4] M F Lu, S Chiang, A Liu, S H Lu, M S Yeh, J R Hwang, T H Tang, and W T Shiau, Hot carrier degradation in novel strained-Si nMOSFETs,”...

Ngày tải lên: 14/09/2015, 14:03

... Conclusion 198 the gate current is mainly responsible for the shift in the worst-case hot- carrier degradation The reduction in the oxide potential barrier as indicated by the slope n, again lending support ... applied to the substrate In order to establish the main hot- carrier degradation mechanism in strained-Si, the effects related to the underlying SiGe is studied in deta...

Ngày tải lên: 14/09/2015, 14:03

... 200 Fundamental and Advanced Topics in Wind Power In addition to Clipper Windpower, CWind of Ontario, Canada is introducing a MW, 8generator wind turbine design They were testing a 65 kW wind ... Monitoring andDetection in Structural Parts of Wind Turbines Monitoring and Damage Damage Detection in Structural Parts of Wind Turbines 1350 Wind turbine model Tower...

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... difference 288 Advanced Topics in Mass Transfer being less than 10% of total drying periods Nelson (1960) applied similar dimensional analysis and theory of similitude to study drying in deep bed grain ... ASAE, 3, 2, 81 -85 & 88 Nindo, C I.; Kudo, Y & Bekki, E (1995) Test model for studying sum drying of rough rice using far-infrared radiation Drying Technology, 13, 225-2 38 P...

Ngày tải lên: 19/06/2014, 23:20

... complexity and prediction accuracy An approach involving 2 48 Advanced Trends in Wireless Communications ray-tracing similar to the one presented in Matolak et al (2006) on the one hand produces ... parameter in uencing the algorithm It is common in most parts of the algorithm and hence introduced in the high level diagram Many parts of the algorithm also refer to it as n De...

Ngày tải lên: 19/06/2014, 23:20

... 00002202 089 4 986 5D61CEA4 586 86C25DFE27E28A2B1F4DF5 480 22F434BAE 584 6A01A4C74BB Smith 0000220208C3F 689 D219D24EA2A39D418A593968B71F4DF5 480 22F434BAE 584 6A01A4C74BB Kelly 00002202 080 B1E9F84B6EA44C 981 573524372C49991F4DF5 480 22F434BAE 584 6A01A4C74BB ... -Richard John 311 Collection and OO SQL in Oracle This approach is quite interesting because we are doing in PL /SQL what...

Ngày tải lên: 08/08/2014, 18:21

... 1996;14:26 38 45 89 McCaffrey JA, Mazumdar M, Bajorin DF, et al Ifosfamide- and cisplatin-containing chemotherapy as first-line salvage therapy in germ cell tumors: response and survival J Clin Oncol ... walls ranging in thickness less than FIGURE 3 5-1 1 Type II hydatid cyst showing daughter cysts and the cyst lining 4 38 / Advanced Therapy in Thoracic Surgery 10 mm.54 S...

Ngày tải lên: 11/08/2014, 01:22

... serves critical functions of enhancing optical coupling, minimizing reflections, and maintaining continuity of the index of refraction of the skin–air interface Clinical experience has also emphasized ... floating the crystal in gel Compressing this 2- to 3-mm layer of gel against the skin will result in crystal placement too close to the skin, thus, greatly increasing the risks of epide...

Ngày tải lên: 14/08/2014, 07:20