Hot carrier mechanisms in advanced NMOS transistors 7

... vol 48, pp 671 - 678 , Apr 2001 Chapter Spatial Interface Damage Due to Self-heating [14] 179 D S Ang and C H Ling, A new assessment of the self-limiting hot- carrier degradation in LDD NMOSFET's ... Devices Meeting Tech Digest, pp 177 -180, 2003 [4] M F Lu, S Chiang, A Liu, S H Lu, M S Yeh, J R Hwang, T H Tang, and W T Shiau, Hot carrier degradation in novel strained-Si nMOSFETs,”...

Ngày tải lên: 14/09/2015, 14:03

... Chapter 1. 1 INTRODUCTION Impact of CMOS Technology Scaling on the Hot- Carrier Effects 1. 1 .1 Bulk Si CMOS Technology Trend 1. 1.2 The Change in CMOS Scaling Approach 1. 1.3 Hot- Carrier Degradation in ... 19 1. 2.2 Current Enhancement in Strained-Si NMOSFET 21 1.2.3 The Self-Heating Effect 27 1. 2.4 Process Induced Strain Relaxation 29 1. 3 Hot- Carrier Degradation...

Ngày tải lên: 14/09/2015, 14:03

... enhancement in strained-Si (b) improvement of Ion-Ioff characteristics in the strained-Si [71] Chapter Introduction 25 NMOS µ eff enhancement 2. 4 2. 2 2. 0 1.8 1.6 1.4 1 .2 Calculated 1.0 0.0 0.1 0 .2 0.3 ... wave function in the inversion layer than that in the bulk Si In other words, a thinner inversion layer is formed in the former [69][70] Reduction in intervalley...

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... in the channel Thus, the incremental increase in charge-pumping current is interpreted as the interface traps present in that portion of the channel This technique was well received for hot- carrier ... probe the hot- carrier damage in regions under the spacer and that in the gate overlap The principle of this method is based on the change in resistance in the channel and...

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... trap assisted tunneling in thin oxides by means of substrate hot electron injection experiments,” in Proc Int Electron Devices Meeting Tech Digest, pp 159-162, 2002 Chapter Hot- carrier Mechanism ... “Mechanism for hot- carrier- induced interface trap generation in MOS transistors, ” in Proc Int Electron Devices Meeting Tech Digest, pp 85-88, 1999 [27] Z Chen, P Ong, A K Myli...

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... [22][23] This finding indicates that the SCE plays a major role in suppressing the injection of HETE in strained-Si NMOSFET Chapter Importance of Dopant Profile in Strained-Si/SiGe NMOSFET Threshold ... Profile in Strained-Si/SiGe NMOSFET 112 4.3 Injection Efficiency of High-Energy Tail Electrons As mentioned in section 3.3, the hot- carrier induced damage in bulk Si arising f...

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... 1 36 The parameter h can be obtained by plotting Id(Vd0,Ta) as a function of Ta, and taking the slope of the linear regression line Now, assuming in the same Ta range, the drain current is a linear ... = 1.8 V) In the case for strained-Si, R increases non-linearly as Wp reduces The ratio R in strained-Si is also much larger than unity for all Wp values indicating self-heating is causin...

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... (SOI) In chapter five, the extracted value of Tch arising from this self-heating effect is ~760 °C during hot- carrier stress In the following experiment, the Ge concentration near the strained-Si ... of severe channel heating on the strained-Si/SiGe interface Thus, it is essential to examine this interface when the transistor is subjected to hot- carrier stress condition In this...

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... Conclusion 198 the gate current is mainly responsible for the shift in the worst-case hot- carrier degradation The reduction in the oxide potential barrier as indicated by the slope n, again lending support ... applied to the substrate In order to establish the main hot- carrier degradation mechanism in strained-Si, the effects related to the underlying SiGe is studied in deta...

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... Fundamental and Advanced Topics in Wind Power Gearbox issues background The insurance companies have displayed scrutiny in insuring wind power generation The insurers joined the rapidly-growing ... 1.65 /77 Spain 1.65 77 MTorres TWT 1.65/82 Spain 1.65 82 Leitwind LTW 77 Italy 1.5 76 .6 Leitwind LTW86 Italy 1.5 86.3 Germany 1.5 70 - 82 Company Clipper [Windpower] Marine...

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... 0.44 0. 87 0. 47 3.32 0.92 6.54 0.43 -0.102 0.44 0. 87 0.98 1.93 0.43 0 .73 3 0.5 0.98 1. 67 3.28 M34 M15 0.05 0 .76 0.088 0.088 0. 375 0. 375 0 .74 0 .74 0.88 0.49 1 .73 0. 97 M4 0.95 0. 279 0. 375 0 .74 0.62 ... 25-50-100-150 0.038 0. 076 0.1 07 0.165 57 114 161 2 47 75188 14 473 7 2048 87 313909 Table Experimental parameters for the two methods of injection 254 Advanced Topics...

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... coding Adaptive modulation and coding (AMC) is a technical term used in wireless communications to achieve maximum data throughput AMC denotes the matching of 216 Advanced Trends in Wireless Communications ... range wireless communication performance using adaptive frequency hopping, Proceeding of 4th IEEE International Conference on Wireless Communications, Networking an...

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... available in PL /SQL since Oracle In the O7 version of Oracle, TABLEs (aka INDEX-BY TABLEs) were introduced in PL /SQL The PL /SQL TABLE is much like the idea that programmers have of an array In ordinary ... Regular Expressions: String Searching and Oracle 10g Alternative Quoting Mechanism in Oracle 10 10g Anyone who has had to deal with quotes in character strings...

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... Interferon-␥ Macrophage chemoattractant protein-1 Interleukin-1␤ Interleukin-2 Interleukin-6 Interleukin-8 Interleukin-10 Interleukin-12 Interleukin-18 Macrophages, lymphocytes Lymphocytes Immune ... lung150–152 induces a rapid release of proinflammatory cytokines including tumor necrosis factor (TNF )- , interferon (IFN )- , IL-1␤, IL-6, membrane cofactor protein (MCP )-1 , and IL-8 (T...

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... longer-term wound-healing response ultimately lead to sustained collagen synthesis in the dermis This is in contradistinction to traditional techniques of laser resurfacing, which involve eliminating ... clinical study Lasers Surg Med 2000; 27: 362– 372 27 Trelles MA, Mordon S, Benitez V, Levy JL Er:YAG laser resurfacing using combined ablation and coagulation modes Dermatol Surg 2001;...

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