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quasi - one dimensional metal oxide semiconductors

quasi - one dimensional metal oxide semiconductors

Vật lý

... the top or the bottom of the catalyst cluster and as reported in Fig 2, a catalyst cluster can give rise to single or multiple nanowires growth The catalyst can be found at the bottom or top ... fairly good conductor in N2 and is converted into an insulator in presence of sufficient oxygen This behavior is attributed to ionized oxygen vacancy that acts as surface acceptor state CO, a reducing ... are reported to have high affinities to organic amines and they have tested gas-sensing properties towards ammonia, 1-propanol, toluene, 1-butylamine diluted in ambient air Response to 10 ppm of...
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electrochemistry at metal and semiconductor electrodes

electrochemistry at metal and semiconductor electrodes

Hóa học - Dầu khí

... potential energy of atomic oxygen nucleus; r = distance from atomic nucleus As two atoms X and Y form a molecule XY, the atom-atom interaction splits each atomic frontier orbital into two molecular ... Bands of Semiconductors 2.4 Electrons and Holes in Semiconductors 2.4.1 Intrinsic semiconductors 2.4.2 n-type and p-type semiconductors 2.5 Energy Levels of Electrons in Semiconductors 2.6 Metal ... reactions 10.2 Photopotential 10.3 Photoexcited Electrode Reactions 10.3.1 Photoexcited electrode reaction current (Photocurrent) 10.3.2 The range of electrode potential for photoelectrode reactions...
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Defect engineering in the formation of ultra shallow junctions for advanced nano metal oxide semiconductor technology

Defect engineering in the formation of ultra shallow junctions for advanced nano metal oxide semiconductor technology

Thạc sĩ - Cao học

... world into a technology era [Transistorized, 2007] IC placed the previously separated transistors, resistors, capacitors and all the connecting wiring onto a single crystal semiconductor material ... His enthusiasm for new knowledge, passion towards education and research has always motivated me to never stop learning I wish to extend my appreciation to Dr Akkipeddi Ramam of IMRE at Singapore, ... due to this reason, semiconductor industry is making phenomenal growth and delivering exponential increase in the number of transistors integrated into single chip at lower cost (per transistor)...
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Characterization and numerical simulation of gallium nitride based metal oxide semiconductor high electron mobility transistor with high k gate stack

Characterization and numerical simulation of gallium nitride based metal oxide semiconductor high electron mobility transistor with high k gate stack

Tổng hợp

... Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal-Oxide-Semiconductor Field Effect Transistor MESFET Metal-Semiconductor Field ... Field Effect Transistor such as GaN based Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) and Metal-Semiconductor Field Effect Transistor (MESFET) However, due to the immaturity of ... susceptible to these defects These transistors are also commonly known as Modulation Doped Field Effect Transistors (MODFETs) or High Electron Mobility Transistors (HEMTs) The MODFET generally refers to...
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Characterization and numerical simulation of gallium nitride based metal oxide semiconductor high electron mobility transistor with high k gate stack

Characterization and numerical simulation of gallium nitride based metal oxide semiconductor high electron mobility transistor with high k gate stack

Cao đẳng - Đại học

... Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal-Oxide-Semiconductor Field Effect Transistor MESFET Metal-Semiconductor Field ... Field Effect Transistor such as GaN based Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) and Metal-Semiconductor Field Effect Transistor (MESFET) However, due to the immaturity of ... susceptible to these defects These transistors are also commonly known as Modulation Doped Field Effect Transistors (MODFETs) or High Electron Mobility Transistors (HEMTs) The MODFET generally refers to...
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Photocatalytic treatment of wastewater contaminated with organic waste and heavy metal from semiconductor industry

Photocatalytic treatment of wastewater contaminated with organic waste and heavy metal from semiconductor industry

Tổng hợp

... recyclable They are able to mineralize various refractory organic compounds Semiconductors are also capable of extended use without substantial loss of photocatalytic activity Semiconductor particles recovered ... photons with sufficient energy, the band gap energy is exceeded and an electron is promoted from the valence band to the conduction band For photons to possess the sufficient energy, according to ... Syringe Pump) was used in this study to produce a quantifiable and relatively steady volumetric flow rate A custom-made syringe rotator was driven by a stepping motor to actively rotate the syringe...
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Vi mạch họ CMOS, cấu tạo và chức năng hoạt động.

Vi mạch họ CMOS, cấu tạo chức năng hoạt động.

Điện - Điện tử

... lên làm tốc độ chuyển mạch chậm lại khiến số to tần số thấp (dưới 1MHz) vài chục, tần số cao số tạo giảm 10 Tính kháng nhiễu Về đặc tính chuyển (trạng thái) nói chung loại CMOS chuyển trạng thái ... tương đối điều kiện nguồn Vdd = 5V Hình bảng nêu thông số áp vào Riêng loại 74HCT CMOS tốc độ cao tương thích với TTL nên thông số giống bên TTL Dòng điện ngõ vào ngõ bảng so sánh dòng vào số ... NOT gồm transistor NMOS transistor PMOS hình 1.65 Hoạt động mạch tương tự NMOS Khi ngõ vào (nối chung cực cổng transistor) cao có Q1 dẫn mạnh áp lấy từ điểm chung cực máng transistor xấp xỉ 0V...
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Plasmonic Green Nanolaser Based on a Metal SemiconductorStructure

Plasmonic Green Nanolaser Based on a Metal SemiconductorStructure

Năng lượng

... measured Purcell factor (∼2.5) is relatively low in comparison with the conventional case of dielectric or semiconductor cavities One way to enhance the Purcell factor is to utilize high-quality ... of plamonic nanocavity due to the spatial proximity and close spectral match between the excitons in semiconductor and the SPPs excited in metal.20 As a result of excitonÀplasmon coupling, the ... H.; Yoshimoto, S.; Saito, H.; Jianglin, Y.; Tanaka, Y.; Noda, S Science 2008, 319, 445–447 (8) Tandaechanurat, A.; Ishida, S.; Guimard, D.; Nomura, M.; Iwamoto, S.; Arakawa, Y Nat Photonics 2011,...
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Water Splitting on Composite Plasmonic-Metal/SemiconductorPhotoelectrodes: Evidence for Selective Plasmon-Induced Formationof Charge Carriers near the Semiconductor Surface

Water Splitting on Composite Plasmonic-Metal/SemiconductorPhotoelectrodes: Evidence for Selective Plasmon-Induced Formationof Charge Carriers near the Semiconductor Surface

Năng lượng

... photocurrent by a factor of ∼10 On the other hand, the addition of Au nanoparticles has only a small effect on the photocurrent Figure shows the photocurrent enhancement for the Ag/NTiO2 photoelectrode ... employed as building blocks to create composite plasmonic-metal/semiconductor photoelectrocatalysts that exhibit enhanced water splitting performance relative to the semiconductor 5204 dx.doi.org/10.1021/ja200086g ... the increase in photon extinction in the sample due to the addition of Ag particles If we assume that every photon that is scattered by Ag is absorbed by N-TiO2 and converted to an eÀ/hþ pair,...
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cross plane electronic and thermal transport properties of p type la0.67sr0.33mno3 lamno3 perovskite oxide metal semiconductor superlattices

cross plane electronic and thermal transport properties of p type la0.67sr0.33mno3 lamno3 perovskite oxide metal semiconductor superlattices

Vật lý

... Jahn-Teller distorted orthorhombic phase to a hightemperature cubic semiconducting phase.13 The electrical properties are tunable by varying the oxygen stoichiometry to achieve a p-type semiconductor that ... performed to achieve metallic epitaxial thin films of LSMO on STO using a background O2 pressure of 50 mTorr, which yielded p-type semiconducting LMO The target was polished prior to each growth to ensure ... deposition controller to monitor Ti deposition thickness Each sample and the reference STO bare substrates were coated with Ti simultaneously to achieve the same thickness and tolerance The sample...
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cross plane thermoelectric transport in p type la0.67sr0.33mno3 lamno3 oxide metal semiconductor superlattices

cross plane thermoelectric transport in p type la0.67sr0.33mno3 lamno3 oxide metal semiconductor superlattices

Vật lý

... ferromagnetic conductor (LSMO) generates spin current These spin currents may be injected into the ferromagnetic semiconductor (LMO) due to lowering of the effective barrier height, which leads to a giant ... 210 mTorr that yielded a 100Â increase in electrical conductivity compared to high resistivity constituent material thin films grown at 52 mTorr oxygen partial pressure Downloaded 16 May 2013 to ... infrared pyrometer (STO emissivity of 0.8) The target was mechanically polished prior to each growth to achieve a uniform film Epitaxial high resistivity thin films of LSMO and LMO on STO were also deposited...
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semiconductor and metal nanocrystals, 2004, p.484

semiconductor and metal nanocrystals, 2004, p.484

Vật lý

... two-thirds HDA and one-third TOP), whereas the TOPO–TOP combination did not work for this material Indeed, the nature of the reaction product was very sensitive to the TOPO/TOP ratio Copyright 2004 ... agent seems to lead to more controlled shell growth; for example, TOPO is replaced with TOP in CdSe shell growth on InAs cores, where TOP (softer Lewis base) coordinates more tightly than TOPO (harder ... contribution to the energy gap is simply proportional to 1/R2 (Fig 1b) In addition to increasing energy gap, quantum confinement leads to a collapse of the continuous energy bands of the bulk material into...
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Báo cáo toán học:

Báo cáo toán học: " Strong coupling among semiconductor quantum dots induced by a metal nanoparticle" ppt

Toán học

... coupled to quantum dots Nature 2007, 450:402 Govorov AO, Bryant GW, Zhang W, Skeini T, Lee J, Kotov NA, Slocik JM, and Naik RR: Excitonplasmon interaction and hybrid excitons in semiconductor-metal ... applications in photonics and optoelectronics [1,2] Studies of these nanostructures are essential for further development of nanotechnology MNPs can be excited to produce surface plasmon polaritons (SPP) ... exciton lifetime of SQD placed in the vicinity of MNP The decrease is related to the distance between SQD and MNP as a result of the coupling of the exciton and SPP field [15] Moreover, the exciton...
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báo cáo hóa học:

báo cáo hóa học:" Strong coupling among semiconductor quantum dots induced by a metal nanoparticle" potx

Hóa học - Dầu khí

... coupled to quantum dots Nature 2007, 450:402 Govorov AO, Bryant GW, Zhang W, Skeini T, Lee J, Kotov NA, Slocik JM, and Naik RR: Excitonplasmon interaction and hybrid excitons in semiconductor-metal ... applications in photonics and optoelectronics [1,2] Studies of these nanostructures are essential for further development of nanotechnology MNPs can be excited to produce surface plasmon polaritons (SPP) ... exciton lifetime of SQD placed in the vicinity of MNP The decrease is related to the distance between SQD and MNP as a result of the coupling of the exciton and SPP field [15] Moreover, the exciton...
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Báo cáo hóa học:

Báo cáo hóa học: " Layers of Metal Nanoparticles on Semiconductors Deposited by Electrophoresis from Solutions with Reverse Micelles" pdf

Báo cáo khoa học

... peaks 107 and 109 correspond to silver isotopes Numbers above the peaks of Pd isotopes correspond to the natural isotopic ratios with number 100 assigned to the isotope with the largest natural ... approximately correct ratios of Pd isotopes 105, 106, 108 and 110 Pd isotope 104 interferes with an unidentified cluster ion The peak amplitude of the low ratio Pd isotope 102 (not shown in Fig 5) is ... nanoparticles deposited onto Si substrate 123 Fig SEM image of Pd nanoparticles deposited onto Si substrate Nanoscale Res Lett (2007) 2:450–454 453 smaller circular electrode was equal to 0.3 mm While...
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CHƯƠNG 4: HỌ VI MẠCH CMOS ppsx

CHƯƠNG 4: HỌ VI MẠCH CMOS ppsx

Cao đẳng - Đại học

... song song số điện dung tăng lên làm tốc độ chuyển mạch chậm lại khiến số to tần số thấp (dưới 1MHz) vài chục, tần số cao số tạo giảm 10 5.6 CÁC IC CỔNG LOGIC Có nhiều IC loại CMOS có mã số chức ... NOT gồm transistor NMOS transistor PMOS hình 4.2 4.2 Hoạt động mạch tương tự NMOS Khi ngõ vào (nối chung cực cổng transistor) cao có Q1 dẫn mạnh áp lấy từ điểm chung cực máng transistor xấp xỉ 0V ... Bài giảng Vi mạch 5.4.5 Hệ số tải Dòng CMOS lớn lúc điện trở vào CMOS lại lớn (thường khoảng 1012Ω) tức dòng vào rất nhỏ nên số to lớn Nhưng cổng CMOS có điện dung ngõ vào thường khoảng 5pF nên...
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Development of semiconductor metal oxide gas sensors modified by mesoporous silica materials

Development of semiconductor metal oxide gas sensors modified by mesoporous silica materials

Cao đẳng - Đại học

... is sensitive to many gaseous species, such as: H2 (25 to 650°C) [73], C2H5OH (25 to 500°C) [74], CO (131 to 570°C) [75], NOx (131 to 525°C) [76], CH4 (200 to 320°C) [77], SO2 (200 to 500°C) [78], ... interest to explore other mixing method to improve the dispersion of semiconductor oxide on mesoporous material in order to significantly improve the sensing properties of semiconductor oxide ... metals, or metal oxides These additives are added to improve the sensitivity to a particular gas, to minimize cross-sensitivity to other gases, and to reduce temperature of operation Such surface/bulk...
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Experimental  computational studies on transition metal silicides for novel applications in advance CMOS technologies

Experimental computational studies on transition metal silicides for novel applications in advance CMOS technologies

Tổng hợp

... potential is used to drive the ions towards the surface of the target causing atoms to be knocked off and condensed on the substrate surface The use of a RF generator is essential to maintain the ... down to a few atomic layers, electrical property and thermal stability will be different to thick silicide films due to quantum effects At the same time, new materials are being introduced into ... properties are related to total energies or to the difference between total energies For example, the equilibrium lattice constant of a crystal is the one that minimizes the total energy; and surfaces...
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