Tài liệu tham khảo |
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Chi tiết |
[1] Nguyễn Văn Hiếu (2015) Dây Nano ôxít kim loại bán dẫn. NXB Bách Khoa Hà Nội Tài liệu tham khảo tiếng Anh |
Sách, tạp chí |
Tiêu đề: |
Dây Nano ôxít kim loại bán dẫn |
Nhà XB: |
NXB Bách Khoa Hà Nội Tài liệu tham khảo tiếng Anh |
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[2] Al-Asadi AS, Henley LA, Wasala M, Muchharla B, Perea-Lopez N, Carozo V, Lin Z, Terrones M, Mondal K, Kordas K, Talapatra S (2017) Aligned carbon nanotube/zinc oxide nanowire hybrids as high performance electrodes for supercapacitor applications. J Appl Phys, 121, pp. 124303 |
Sách, tạp chí |
Tiêu đề: |
Aligned carbon nanotube/zinc oxide nanowire hybrids as high performance electrodes for supercapacitor applications |
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[3] Arredondo B, Romero B, Beliatis MJ, del Pozo G, Martín-Martín D, Blakesley JC, Dibb G, Krebs FC, Gevorgyan SA, Castro FA (2018) Analysing impact of oxygen and water exposure on roll-coated organic solar cell performance using impedance spectroscopy. Sol Energy Mater Sol Cells, 176, pp. 397-404 |
Sách, tạp chí |
Tiêu đề: |
Analysing impact of oxygen and water exposure on roll-coated organic solar cell performance using impedance spectroscopy |
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[4] Aydin H, Bacaksiz C, Yagmurcukardes N, Karakaya C, Mermer O, Can M, Senger RT, Sahin H, Selamet Y (2018) Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes. Appl Surf Sci, 428, pp. 1010-1017 |
Sách, tạp chí |
Tiêu đề: |
Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes |
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[5] Baek D, Kim J (2017) Few-layered MoS 2 gas sensor functionalized by Pd for the detection of hydrogen. Sensors Actuators B Chem, 250, pp. 686-691 |
Sách, tạp chí |
Tiêu đề: |
Few-layered MoS"2" gas sensor functionalized by Pd for the detection of hydrogen |
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[6] Bahman Keramti and Jay N. Zemel (1982) Pd-thin-SiO 2 -Si diode.II. Theoretical modeling and the H 2 response. J Appl Phys, 53, pp. 1100-1109 |
Sách, tạp chí |
Tiêu đề: |
Pd-thin-SiO"2"-Si diode.II. Theoretical modeling and the H"2 "response |
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[7] Bartolomeo A Di (2016) Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction. Phys Rep, 606, pp.1-58 |
Sách, tạp chí |
Tiêu đề: |
Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction |
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[8] Bell RA (2015) Conduction in Carbon Nanotube Networks. Springer International Publishing Switzerland |
Sách, tạp chí |
Tiêu đề: |
Conduction in Carbon Nanotube Networks |
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[10] Brus VV. (2013) The effect of interface state continuum on the impedance spectroscopy of semiconductor heterojunctions. Semicond Sci Technol, 28, pp.25013 |
Sách, tạp chí |
Tiêu đề: |
The effect of interface state continuum on the impedance spectroscopy of semiconductor heterojunctions |
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[11] Chen G, Paronyan TM, Harutyunyan AR (2012) Sub-ppt gas detection with pristine graphene. Appl Phys Lett, 101, pp. 53119 |
Sách, tạp chí |
Tiêu đề: |
Sub-ppt gas detection with pristine graphene |
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[12] Chen G, Paronyan TM, Pigos EM, Harutyunyan AR (2012) Enhanced gas sensing in pristine carbon nanotubes under continuous ultraviolet light illumination. Sci Rep, 2, pp. 1-7 |
Sách, tạp chí |
Tiêu đề: |
Enhanced gas sensing in pristine carbon nanotubes under continuous ultraviolet light illumination |
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[13] Chen PC, Shen G, Sukcharoenchoke S, Zhou C (2009) Flexibnle and transparent supercapacitor based on In 2 O 3 nanowire/carbon nanotube heterogeneous films.Appl Phys Lett, 94, pp. 2007-2010 |
Sách, tạp chí |
Tiêu đề: |
Flexibnle and transparent supercapacitor based on In"2"O"3" nanowire/carbon nanotube heterogeneous films |
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[14] Cheng CC, Wu CL, Liao YM, Chen YF (2016) Ultrafast and Ultrasensitive Gas Sensors Derived from a Large Fermi-Level Shift in the Schottky Junction with Sieve- Layer Modulation. ACS Appl Mater Interfaces, 8, pp. 17382-17388 |
Sách, tạp chí |
Tiêu đề: |
Ultrafast and Ultrasensitive Gas Sensors Derived from a Large Fermi-Level Shift in the Schottky Junction with Sieve-Layer Modulation |
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[15] Cheung SK, Cheung NW (1986) Extraction of Schottky diode parameters from forward current-voltage characteristics. Appl Phys Lett, 49, 85-87 |
Sách, tạp chí |
Tiêu đề: |
Extraction of Schottky diode parameters from forward current-voltage characteristics |
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[16] Cho B, Yoon J, Lim SK, Kim AR, Kim D-H, Park S-G, Kwon J-D, Lee Y-J, Lee K- H, Lee BH, Ko HC, Hahm MG (2015) Chemical sensing of 2D graphene/MoS 2heterostructure device. ACS Appl Mater Interfaces, 7, pp. 16775-16780 |
Sách, tạp chí |
Tiêu đề: |
Chemical sensing of 2D graphene/MoS"2 "heterostructure device |
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[17] Choi S, Fuchs F, Demadrille R, Gre B, Jang B, Lee S, Lee J, Tuller HL, Kim I (2014) Fast Responding Exhaled-Breath Sensors Using WO 3 Hemitubes Functionalized by Graphene-Based Electronic Sensitizers for Diagnosis of Diseases. ACS Appl Mater Interfaces, 6, pp. 9061-9070 |
Sách, tạp chí |
Tiêu đề: |
Fast Responding Exhaled-Breath Sensors Using WO"3" Hemitubes Functionalized by Graphene-Based Electronic Sensitizers for Diagnosis of Diseases |
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[18] Choi SW, Katoch A, Kim JH, Kim SS (2014) Prominent reducing gas-sensing performances of n-SnO 2 nanowires by local creation of p-n heterojunctions by functionalization with p-Cr 2 O 3 nanoparticles. ACS Appl Mater Interfaces, 6, pp.17723-17729 |
Sách, tạp chí |
Tiêu đề: |
Prominent reducing gas-sensing performances of n-SnO"2" nanowires by local creation of p-n heterojunctions by functionalization with p-Cr"2"O"3" nanoparticles |
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[20] Cowley AM, Sze SM (1965) Surface States and Barrier Height of MetalSemiconductor Systems. 36, pp. 3212-3220 |
Sách, tạp chí |
Tiêu đề: |
Surface States and Barrier Height of MetalSemiconductor Systems |
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[21] Dai M, Zhao L, Gao H, Sun P, Liu F, Zhang S, Shimanoe K, Yamazoe N, Lu G (2017) Hierarchical Assembly of α-Fe 2 O 3 Nanorods on Multiwall Carbon Nanotubes as a High-Performance Sensing Material for Gas Sensors. ACS Appl Mater Interfaces, 9, pp. 8919-8928 |
Sách, tạp chí |
Tiêu đề: |
Hierarchical Assembly of α-Fe"2"O"3" Nanorods on Multiwall Carbon Nanotubes as a High-Performance Sensing Material for Gas Sensors |
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[22] Das M, Datta J, Sil S, Dey A, Jana R, Halder S, Ray PP (2018) Equivalent circuit analysis of Al/rGO-TiO 2 metal- semiconductor interface via impedance spectroscopy: Graphene induced improvement in carrier mobility and lifetime.Mater Sci Semicond Process, 82, pp. 104-111 |
Sách, tạp chí |
Tiêu đề: |
Equivalent circuit analysis of Al/rGO-TiO"2" metal- semiconductor interface via impedance spectroscopy: Graphene induced improvement in carrier mobility and lifetime |
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