MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 16 doc

... small-signal capacitances, 14 9-1 50 in MOSFET, 171, 33 2-3 33, 347 Avalanche effect, 52 Back gate bias, 78 Band bending, 12 5-1 27 Band diagram, 16 Band gap, 1 6-1 7 Barrier lowering, 21 0-2 19, ... z1 and z2 can be written as (z: - 2rz,z2 + zi) . 1 1 f (z1,zd = exp[ -~ 2ltJF-F 2( 1 - r2) (H .16) 1 Simplifying equation (H .16) we get (...

Ngày tải lên: 13/08/2014, 05:22

... + + pMOST - - - + terminal voltages as drain-source voltage Vds( = V, - VJ, gate-source voltage V,,( = V, - V,), and bulk-source voltage vb,( = vb - Vs). For normal DC ... 2 Basic Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2 = (1 - F,...

Ngày tải lên: 13/08/2014, 05:22

... Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. 3.3 1 Cross-section showing overlap capacitances between the source/drain and the gate which give rise to C,,, and CGDo ... order expression for Rsp, based on the assumption of uniform doping 128 4 MOS Capacitor I- -t > O O+ -0 .6 1 A1 (p-Si n+ Po~y(p-si) -o...

Ngày tải lên: 13/08/2014, 05:22

... model for drain-induced barrierlowering and drain-induced high electric field in a short-channel MOSFET , Solid-State pp. 11 8-1 27 (1989). Electron., 30, pp. 50 3-3 11 (1987). [78] Y. Omura and ... (a) and (b) (Figs. 5.31 and 5.32) which are for Vsb = 3 V and 0 V, respectively. n-Channel Devices (nMOST). For n-channel enhancement devices (n' polysil...

Ngày tải lên: 13/08/2014, 05:22

... more manage- able form, if the following substitutions are made (1 1.26a) 538 11 SPICE Diode and MOSFET Models s - 1 0-4 u 1 0-5 3 1 0-6 0 U z U U 0 I %= 8.99 1 0-1 4 A r,= ... (11.28) (V, - $V2 - iX2)(X2 - V2) - +(yFJq)(X3 - Vi’2) U= Vl - (YFl/rl)X - x2 X4 + AX3 + BX2 + CX + D = 0 where the coefficients...

Ngày tải lên: 13/08/2014, 05:22

... available from the British Library. MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electronics and Technology Copyright 0 2007 by ... case permission to photocopy is not required from the publisher. ISBN-13 97 8-9 8 1-2 5 6-8 6 2-5 ISBN- 10 98 1 -2 5 6-8 62-X Disclaimer: This book was prepa...

Ngày tải lên: 13/08/2014, 05:22

... conditions is given by the Fermi-Dirac At 77K ni for silicon is -1 0-2 0cm-3, while at 400K its value is -1 O'*~m-~ 28 2 Basic Semiconductor and pn Junction Theory nonequilibrium condition ... - Vd); vd is positive for forward bias and negative for reuerse bias. If the applied forward voltage is exactly equal to the built-in voltage, there wi...

Ngày tải lên: 13/08/2014, 05:22

... df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for p+ polysilicon gate) (tax ... (4.48) is e-4s/vt and therefore in this regime Q, varies as Q, - ec4s/2vt (accumulation). (4.5 1 a) References 165 For an MOS capacitor with n...

Ngày tải lên: 13/08/2014, 05:22

... (a) - - - 16 -3 A Nb=1.71 x 10 cm x Nb = 1.5 6 x 1Ol6c m3 N 4-2 5 x 1 0'6cm-3 0. 3- 2 6 10 I& I8 2 WIDTH (pm) (b) Fig. 5.21 (a) Aker's model for ... 0.0 u- 0.7 W Q !i 0.6 0 > 4 0.5 0 >" ;- I 5 0.4 lY I bO.3 195 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10'&qu...

Ngày tải lên: 13/08/2014, 05:22

... form that at first glance appears different. 6.7 Short-Geometry Models 3 - 2- - a 9- W- (7 5 9 1.75 Q t- 6 !I 3 t- 6 fJY 0.5 293 I = 1.31 x 104V/cm a= 1.13 0 - ... write 111 - -+ - Peff Ps 4, - - (6.1 64) A slightly different form for peff has also been used [24], [46], [68] (6 .165 ) which has been generally expre...

Ngày tải lên: 13/08/2014, 05:22