MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 15 doc
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 15 doc
... manage-
able form, if the following substitutions are made
(1 1.26a)
538
11 SPICE Diode and
MOSFET
Models
s
-
1 0-4
u
1 0-5
3
1 0-6
0
U
z
U
U
0
I
%=
8.99
1 0-1 4
A
r,=
15. 88R ...
IEEE Int.
Conf.
on
Computer-Aided Design, ICCAD-84, pp. 18 4-1 51 (1984).
[13]
S.
L.
Wong and C. A.
T.
Salama, ‘Improved simulation
of
p-
and n-channel
MO...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 3 docx
...
+ +
pMOST
- -
-
+
terminal voltages as drain-source voltage
Vds(
=
V,
-
VJ,
gate-source voltage
V,,(
=
V,
-
V,),
and bulk-source voltage
vb,(
=
vb
-
Vs).
For
normal
DC ...
2
Basic Semiconductor and
pn
Junction
Theory
The variables
F,,F,
and
F3
are
F,
=-
*bi
[l
-( 1
-
F,)&apos ;-& quot;]
(1
-4
F2
=
(1
-
F,...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 4 doc
... Structure and Operation
~i
1;
L
6i!
-
-
-
-
-
-
-
-
-
Fig.
3.3
1
Cross-section showing overlap capacitances between the source/drain and the
gate which give rise to
C,,,
and
CGDo ... order expression for
Rsp,
based on the assumption of uniform doping
128
4
MOS
Capacitor
I-
-t
>
O
O+
-0 .6
1
A1
(p-Si
n+
Po~y(p-si)
-o...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 7 doc
... model for drain-induced barrierlowering
and drain-induced high electric field in a short-channel MOSFET , Solid-State
pp. 11 8-1 27 (1989).
Electron., 30, pp. 50 3-3 11 (1987).
[78]
Y.
Omura and ...
(a) and (b) (Figs. 5.31 and 5.32) which are for
Vsb
=
3
V
and
0
V,
respectively.
n-Channel Devices
(nMOST). For n-channel enhancement devices
(n'
polysil...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 16 doc
... effect, 15 9-1 60
accumulation, 149
deviation from ideal, 15 6-1 59
depletion, 15 0- 152
deep depletion, 155
inversion, 152
high frequency, 154
low frequency, 153
measurement
of,
41 8-4 21
Channel ...
small-signal capacitances, 14 9-1 50
in
MOSFET,
171, 33 2-3 33, 347
Avalanche effect, 52
Back gate bias, 78
Band bending, 12 5-1 27
Band diagram, 16...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 1 potx
... Frequency C-V Plot 153
4.3.2 High Frequency C-V Plot 154
4.3.3 Deep Depletion C-V Plot 155
4.4 Deviation from Ideal C-V Curves 156
4.5 Anomalous C-V Curve (Polysilicon Depletion Effect) 159
4.6 ...
transistors
and related devices’, IEEE Trans. Electron Devices, ED-23, pp. 65 5-6 60 (1976);
J.
D. Meindl, ‘Ultralarge scale integration’, ibid, ED-31, pp. 155 5-1 561 (1984)....
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 2 ppt
...
1982 and given
in
many
textbooks) by as much as 50% for boron doped p-type silicon. For
phosphorous doped n-type silicon the difference is only
157 4.
Curves for
n-type are lower than p-doped ... conditions is given by the Fermi-Dirac
At
77K
ni
for
silicon
is
-1 0-2 0cm-3,
while
at
400K
its value is -1 O'*~m-~
28
2
Basic Semiconductor and
pn
Junc...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 5 ppsx
...
df
Qh
Y
<h
VTO
nMOST p-type
-
+-
+++
pMOST n-type
-
-+ -
(for
metals and
n+
polysilicon
gate)
- -
(for metals and
n+
polysilicon gate)
+
(for
p+
polysilicon gate)
(tax ... operation
for
a p-type substrate,
N,
=
5.1 015
cm-
’,
to,
=
300
A,
and
V,,
=
0
V
4.2
MOS
Capacitor at Non-Zero Bias
143
Using
Eq.
(4.29)
f...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx
...
>" ;-
I
5
0.4
lY
I
bO.3
195
1'1'1'1'1~1'1'1~
I
-
Nb
=
2
X
10'"cm-3
-
-
-
-
-
W=20
m
-
f"\L
"A&ING
-
I
I
1 ... both pMOST and nMOST devices, a general expression for
the threshold voltage can be written as
(5.63)
where the
+
and
-
signs are for
n-
and p-chan...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx
...
form that at first glance appears different.
6.7
Short-Geometry Models
3
-
2-
-
a
9-
W-
(7
5
9
1.75
Q
t-
6
!I
3
t-
6
fJY
0.5
293
I
=
1.31
x
104V/cm
a=
1.13
0
- ...
and
is often neglected. For p-channel devices improves the current-voltage
data fit. The SPICE MOSFET Levels 3 and 4 models use 0,=0 in
Eq. (6 .153 ) for both
p-
and...
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