MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 13 ppsx

... 12), North-Holland, New York, 1989. [13a] K. R. Mistry and B. Doyle, ‘AC versus DC hot-carrier degradation in n-channel MOSFETs’, IEEE Trans. Electron Devices, ED-40, pp. 9 6-1 04 (1993). ... measurement’, Solid-state Electron., 27, pp. 95 3-9 62 (1984). See also related papers, ibid, pp. 96 3-9 75 and pp. 97 7-9 88 (1984). [17] M. Kuhn, ‘A quasi-static technique f...

Ngày tải lên: 13/08/2014, 05:22

... df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for p+ polysilicon gate) (tax ... distribution and thickness of the inversion layer of a MOS field-effect transistor’, Solid-State Electron., 13, pp. 130 1-1 309 (1970). [I71 K. H. Zai...

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... case permission to photocopy is not required from the publisher. ISBN -1 3 97 8-9 8 1-2 5 6-8 6 2-5 ISBN- 10 98 1 -2 5 6-8 62-X Disclaimer: This book was prepared by the authors. Neither the Publisher ... available from the British Library. MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electro...

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... conditions is given by the Fermi-Dirac At 77K ni for silicon is -1 0-2 0cm-3, while at 400K its value is -1 O'*~m-~ 28 2 Basic Semiconductor and pn Junction Theory nonequilibrium condition ... - Vd); vd is positive for forward bias and negative for reuerse bias. If the applied forward voltage is exactly equal to the built-in voltage, there wi...

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... + + pMOST - - - + terminal voltages as drain-source voltage Vds( = V, - VJ, gate-source voltage V,,( = V, - V,), and bulk-source voltage vb,( = vb - Vs). For normal DC ... 2 Basic Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2 = (1 - F,...

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... Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. 3.3 1 Cross-section showing overlap capacitances between the source/drain and the gate which give rise to C,,, and CGDo ... order expression for Rsp, based on the assumption of uniform doping 128 4 MOS Capacitor I- -t > O O+ -0 .6 1 A1 (p-Si n+ Po~y(p-si) -o...

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... >" ;- I 5 0.4 lY I bO.3 195 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10'"cm-3 - - - - - W=20 m - f"\L "A&ING - I I 1 ... both pMOST and nMOST devices, a general expression for the threshold voltage can be written as (5.63) where the + and - signs are for n- and p-chan...

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... nonuniformly doped MOSFETs’, IEEE Trans. Electron Devices, ED-31, PP. 30 3-3 07 (1984). [13] P. Ratnam and C. A. T. Salama, ‘A new-approach to the modeling of nonuniformly doped short-channel ... model for drain-induced barrierlowering and drain-induced high electric field in a short-channel MOSFET , Solid-State pp. 11 8-1 27 (1989). Electron., 30, pp. 50 3-3 11 (1...

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... form that at first glance appears different. 6.7 Short-Geometry Models 3 - 2- - a 9- W- (7 5 9 1.75 Q t- 6 !I 3 t- 6 fJY 0.5 293 I = 1.31 x 104V/cm a= 1 .13 0 - ... needs 2- or 3-D analysis to account for short-channel and/ or narrow-width behavior. However, for circuit models we invariably modify the 1-D equations developed ear...

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... 308 3 .O 6 MOSFET DC Model I I 1 I I I pMOST toX = 105 A W,/L, = 10l0.5 v,, = -4 v h c E 4 v U I 1 .o I - -2 v 0.01 -1 - - 7- -1 - - i - I * " ... 6 MOSFET DC Model GATE SAT U R AT 10 N 4 DRAIN 1 L - - - - - - - - - - - D C 0 WY' L 4J-4 Fig. 6....

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