MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 4 doc

... expression for Rsp, based on the assumption of uniform doping 128 4 MOS Capacitor I- -t > O O+ -0 .6 1 A1 (p-Si n+ Po~y(p-si) -o-8 -I .o Nb (~rn-~) _t Fig. 4. 5 Work ... Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. 3.3 1 Cross-section showing overlap capacitances between the source/drain and the gate which give rise to C,,, and CGDo ... @m - (x, + Eg + q4f) (V) (4. 6) or Oms = -0 .51 - 4f (V) p-type Si. I (4. 7) Since CDf is typically 0.3V, am, is a negative number. Similarly for an Al-Si0,-Si(n-type)...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 3 docx

... aEsi - 2.1 0 -4 ~ eSi dT for silicon, we obtain Cj, at any temperature T in terms of a known temperature To as Cjo(T) = Cjo(To) 4bi(T) - @bi(TO)]] 4. 1 0 -4 (T- To) - 4bi(TO) ... punchthrough 64 2 Basic Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2 = (1 - F,)l+m F, = 1 - F,(1 + ... has heavily doped p+ source and drain regions with 80 Z 4 LL 0 - W/L = to, = V. 3 MOS Transistor Structure and Operation -4 .0 -3 .2 -2 .4 -1 .6 -0 .8 0 0.8 1.6 GATE VOLTAGE,...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 7 doc

... (2.38) (6.4a) an 1 - = ~ V. J, - R, + G, at 4 - aP = - -V.J, 1 - R, + G, (holes). at 4 (electrons) (6.4b) As was pointed out earlier, modeling a MOSFET is a 3-dimensional ... Trans. Electron Devices, ED- 34, pp. 247 6-2 48 4 (1987). [68] K. K. Hsueh, J. J. Sanchez, T. A. Demassa, and L. A. Akers, ‘Inverse-narrow-width effects and small-geometry MOSFERT threshold ... (6.27) becomes (6 .44 ) Combining Eq. (6 .43 ) and (6 .44 ) we get Qi(Y) = - CoxCVgs - vth - v(Y)I (6 .45 ) where V,, is the threshold voltage defined as [cf. Eq. (5. 14) ] vth = vfb +...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 15 doc

... followed by the - ' A 1 14 3 :4 10 .4 10 .4 10 14 2 14 1 .4 5 .4 5 .4 5 .4 3 .4 1 .4 2 .4 WIDTH / LENGTH (pm/Nm I Fig. 11.6 Comparison of 4 different MOSFET models, Levels 1 -4 . (After ... IEEE Int. Conf. on Computer-Aided Design, ICCAD- 84, pp. 18 4- 1 51 (19 84) . [13] S. L. Wong and C. A. T. Salama, ‘Improved simulation of p- and n-channel MOSFETs using an enhanced SPICE ... more manage- able form, if the following substitutions are made (1 1.26a) 538 11 SPICE Diode and MOSFET Models s - 1 0 -4 u 1 0-5 3 1 0-6 0 U z U U 0 I %= 8.99 1 0-1 4 A r,=...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 16 doc

... 48 4- 4 88 intrinsic capacitances, 47 7 -4 84 on-chip, 47 7 -4 8 1 off-chip, 48 1 -4 84 current method, 44 8 -4 52 split C-V method, 45 2 -4 57 saturation voltage, 47 2 -4 77 inversion layer mobility: 582 ... length: 48 9 -4 91 current methods, 45 8 -4 67 capacitance method, 46 8 -4 70 effective channel width, 47 0 -4 72 flat band voltage, 44 5 gate current, 41 0 -4 12 gate overlap capacitances, 48 4- 4 88 intrinsic ... profile: C-V method (MOS capacitor), 42 8 -4 34 C-V method (MOSFET) , 43 4- 4 36 DC method (MOSFET) , 43 6 -4 38 four-point probe method, 42 7 spreading resistance method, 42 8 SIMS method, 42 8 optical...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 1 potx

... 135 4. 2.3 Inversion 138 4. 3.1 Low Frequency C-V Plot 153 4. 3.2 High Frequency C-V Plot 1 54 4. 3.3 Deep Depletion C-V Plot 155 4. 4 Deviation from Ideal C-V Curves 156 4. 5 Anomalous C-V Curve ... Measurements 40 2 9.1 Data Acquisition 40 3 9.1.1 Data for DC Models 41 0 9.1.2 Data for AC Models 41 4 9.1.3 MOS Capacitor C-V Measurement 41 8 9.2 Gate-Oxide Capacitance Measurement 42 1 9.2.1 ... Model 244 6 .4. 2 Bulk-Charge Model 251 6 .4. 3 Square-Root Approximation 253 6 .4. 4 6 .4. 5 Subthreshold Region Model 259 6 .4. 6 Limitations of the Model 267 Drain Current Equation with Square-Root...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 2 ppt

... quasi-Fermi potentials for electrons and holes corresponding to the quasi-Fermi level 5, and 2Fp respectively, then under 44 2 Basic Semiconductor and pn Junction Theory b( - X,) ... conditions is given by the Fermi-Dirac At 77K ni for silicon is -1 0-2 0cm-3, while at 40 0K its value is -1 O'*~m-~ 28 2 Basic Semiconductor and pn Junction Theory nonequilibrium condition ... resistance and p- and n- bulk (or neutral) regions resistance is negligible (see discussion in section 3.2.1, Eq. 2. 64) . 22 = ni exp [& (4 - 4, )] (cm-3) 2 Basic Semiconductor and...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 5 ppsx

... 143 Using Eq. (4. 29) for Qb and Eq. (4. 39) for Q,, we get the inversion charge Qi from Eq. (4. 40) as Qi = - , /-[ , /4, + Vte(4s-2$f)'"t - A] (C/cm2). (4. 41) ... (5. 14) Substrate Vfb df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for p+ ... Eq. (4. 15) that (Ei - Ef) I 64 4 MOS Capacitor N~ = 3.3 to,=300 A n' POLY-Si GATE p-SUBSTRATE -0 .7 t 0 DATA - MODEL (4. 80) Eq. (4. 69) -1 -5 0 100 200 300 40 0 TEMPERATURE,T...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx

... 0.6 0 > 4 0.5 0 >" ;- I 5 0 .4 lY I bO.3 195 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10'"cm-3 - - - - - W=20 m - f"\L "A&ING ... qNb(Xdm - xi) - qNsXi. (5 .42 ) Combining Eqs. (5 .41 ) and (5 .42 ) and using the resulting equation for Qb in Eq. (5.7), with appropriate sign changes, yields the following equation for p-channel ... (a) - - - 16 -3 A Nb=1.71 x 10 cm x Nb = 1.5 6 x 1Ol6c m3 N 4- 2 5 x 1 0'6cm-3 0. 3- 2 6 10 I& I8 2 WIDTH (pm) (b) Fig. 5.21 (a) Aker's model for...

MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx

... 1) is a short-channel factor. This value of Qb when used in Eq. (6 .43 ) yields QdY) = - FfyCoxJ24f + Vsb + V(y) Qi(Y) = - CoxCVp - vfb - 24f - FlYJ24f + Vs, - (1 + Fly ... to a first approximation, we can write 111 - -+ - Peff Ps 4, - - (6.1 64) A slightly different form for peff has also been used [ 24] , [46 ], [68] (6.165) which has been generally ... (6. 145 ) and (6. 146 ) for cYxl and cYX2 and substituting in Eq. (6. 144 ) yields (6. 147 ) Thus is related to the bulk depletion charge Qb and to the inversion charge Qi. This equation for...

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