MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 4 doc

... expression for Rsp, based on the assumption of uniform doping 128 4 MOS Capacitor I- -t > O O+ -0 .6 1 A1 (p-Si n+ Po~y(p-si) -o-8 -I .o Nb (~rn-~) _t Fig. 4. 5 Work ... Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. 3.3 1 Cross-section showing overlap capacitances between the source/drain and the g...

Ngày tải lên: 13/08/2014, 05:22

... aEsi - 2.1 0 -4 ~ eSi dT for silicon, we obtain Cj, at any temperature T in terms of a known temperature To as Cjo(T) = Cjo(To) 4bi(T) - @bi(TO)]] 4. 1 0 -4 (T- To) - 4bi(TO) ... punchthrough 64 2 Basic Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2...

Ngày tải lên: 13/08/2014, 05:22

... (2.38) (6.4a) an 1 - = ~ V. J, - R, + G, at 4 - aP = - -V.J, 1 - R, + G, (holes). at 4 (electrons) (6.4b) As was pointed out earlier, modeling a MOSFET is a 3-dimensional ... Trans. Electron Devices, ED- 34, pp. 247 6-2 48 4 (1987). [68] K. K. Hsueh, J. J. Sanchez, T. A. Demassa, and L. A. Akers, ‘Inverse-narrow-width effect...

Ngày tải lên: 13/08/2014, 05:22

... followed by the - ' A 1 14 3 :4 10 .4 10 .4 10 14 2 14 1 .4 5 .4 5 .4 5 .4 3 .4 1 .4 2 .4 WIDTH / LENGTH (pm/Nm I Fig. 11.6 Comparison of 4 different MOSFET models, Levels 1 -4 . (After ... IEEE Int. Conf. on Computer-Aided Design, ICCAD- 84, pp. 18 4- 1 51 (19 84) . [13] S. L. Wong and C. A. T. Salama, ‘Improved simulation of...

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... 48 4- 4 88 intrinsic capacitances, 47 7 -4 84 on-chip, 47 7 -4 8 1 off-chip, 48 1 -4 84 current method, 44 8 -4 52 split C-V method, 45 2 -4 57 saturation voltage, 47 2 -4 77 inversion layer mobility: 582 ... length: 48 9 -4 91 current methods, 45 8 -4 67 capacitance method, 46 8 -4 70 effective channel width, 47 0 -4 72 flat band voltage, 44 5 gate curr...

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... 135 4. 2.3 Inversion 138 4. 3.1 Low Frequency C-V Plot 153 4. 3.2 High Frequency C-V Plot 1 54 4. 3.3 Deep Depletion C-V Plot 155 4. 4 Deviation from Ideal C-V Curves 156 4. 5 Anomalous C-V Curve ... Measurements 40 2 9.1 Data Acquisition 40 3 9.1.1 Data for DC Models 41 0 9.1.2 Data for AC Models 41 4 9.1.3 MOS Capacitor C-V Measurement 41 8 9.2 Gate-Oxide Capacitance...

Ngày tải lên: 13/08/2014, 05:22

... quasi-Fermi potentials for electrons and holes corresponding to the quasi-Fermi level 5, and 2Fp respectively, then under 44 2 Basic Semiconductor and pn Junction Theory b( - X,) ... conditions is given by the Fermi-Dirac At 77K ni for silicon is -1 0-2 0cm-3, while at 40 0K its value is -1 O'*~m-~ 28 2 Basic Semiconductor and pn Junctio...

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... 143 Using Eq. (4. 29) for Qb and Eq. (4. 39) for Q,, we get the inversion charge Qi from Eq. (4. 40) as Qi = - , /-[ , /4, + Vte(4s-2$f)'"t - A] (C/cm2). (4. 41) ... (5. 14) Substrate Vfb df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for m...

Ngày tải lên: 13/08/2014, 05:22

... 0.6 0 > 4 0.5 0 >" ;- I 5 0 .4 lY I bO.3 195 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10'"cm-3 - - - - - W=20 m - f"\L "A&ING ... qNb(Xdm - xi) - qNsXi. (5 .42 ) Combining Eqs. (5 .41 ) and (5 .42 ) and using the resulting equation for Qb in Eq. (5.7), with ap...

Ngày tải lên: 13/08/2014, 05:22

... 1) is a short-channel factor. This value of Qb when used in Eq. (6 .43 ) yields QdY) = - FfyCoxJ24f + Vsb + V(y) Qi(Y) = - CoxCVp - vfb - 24f - FlYJ24f + Vs, - (1 + Fly ... to a first approximation, we can write 111 - -+ - Peff Ps 4, - - (6.1 64) A slightly different form for peff has also been used [ 24] , [46 ], [68]...

Ngày tải lên: 13/08/2014, 05:22