MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 2 ppt
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 1 potx
... Temperature Coefficient
SID
12
I
Overview
13 1
c 41
I 51
16 1
17 1
18 1
19 1
c1 01
11 21
c1 31
11 41
c1 51
c1 91
E.
H.
Snow, A.
S.
Grove, B. E. Deal, and C.
T.
Sah, ‘Ion transport ... integration’, ibid, ED- 31, pp. 15 5 5 -1 5 61 (19 84).
1. 1
Circuit Design and MOSFETs
3
1. 1
Circuit Design with
MOSFETs
For today’s circuit design, computer-...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 2 ppt
...
for silicon can be modeled
using the following polynomial equation
[
151
1 .20 6 -2 .73
x
lOP4T (2. 2a)
1.178 5-9 . 025
x
1 0-5 T-3.05
x
10p7T2 (2. 2b)
1.17+ 1.059
x
10p5T-6.05
x
1 0-7 T2 ... Fermi-Dirac
At
77K
ni
for
silicon
is
-1 0 -2 0cm-3,
while
at
400K
its value is -1 O'*~m-~
28
2
Basic Semiconductor and
pn
Junction Theory
none...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 3 docx
...
+ +
pMOST
- -
-
+
terminal voltages as drain-source voltage
Vds(
=
V,
-
VJ,
gate-source voltage
V,,(
=
V,
-
V,),
and bulk-source voltage
vb,(
=
vb
-
Vs).
For
normal
DC ... has heavily doped
p+
source and drain regions with
80
Z
4
LL
0
-
W/L
=
to,
=
V.
3
MOS
Transistor Structure and Operation
-4 .0
-3 .2 -2 .4
-1...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 4 doc
... expression for
Rsp,
based on the assumption of uniform doping
128
4
MOS
Capacitor
I-
-t
>
O
O+
-0 .6
1
A1
(p-Si
n+
Po~y(p-si)
-o-8
-I
.o
Nb
(~rn-~)
_t
Fig.
4. 5
Work ... Structure and Operation
~i
1;
L
6i!
-
-
-
-
-
-
-
-
-
Fig.
3.3
1
Cross-section showing overlap capacitances between the source/drain and the...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 5 ppsx
...
Eq.
(5. 14)
Substrate
Vfb
df
Qh
Y
<h
VTO
nMOST p-type
-
+-
+++
pMOST n-type
-
-+ -
(for
metals and
n+
polysilicon
gate)
- -
(for metals and
n+
polysilicon gate)
+
(for ... frequency
MOS
capacitance’, Solid-state Electron., 17, pp. 73 5- 7 42 (1974).
ED-32,
pp. 61
7-6 21
(I
9 85) .
5. 1
MOSFET
with Uniformly Doped Sub...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx
...
(a)
-
-
-
16
-3
A
Nb=1.71
x
10
cm
x
Nb
=
1.5
6
x
1Ol6c
m3
N 4-2 5
x
1
0'6cm-3
0. 3-
2
6
10
I&
I8
2
WIDTH
(pm)
(b)
Fig. 5.21
(a)
Aker's model
for ...
0.0
u-
0.7
W
Q
!i
0 .6
0
>
4
0.5
0
>" ;-
I
5
0.4
lY
I
bO.3
195
1'1'1'1'1~1'1'1~
I
-
Nb
=
2
X
10&apo...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 7 doc
...
Devices, ED-33, pp. 174 5-1 75 2 (1986).
[77 ]
S.
C. Jain and
P.
Balk,
‘A
unified analytical model for drain-induced barrierlowering
and drain-induced high electric field in a short-channel MOSFET , ... MOSFET , Solid-State
pp. 11 8-1 27 (1989).
Electron., 30, pp. 50 3-3 11 (19 87) .
[78 ]
Y.
Omura and K. Ohwada, ‘Threshold voltage theory
for
short-channe...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx
...
Qb
=
-
cuxY
=
-
cuxY
(6 .88 )
Further, since
Qi
<<
Qb,
we have
Q,
z
Qb,
so that Eq. (6.19) becomes
Qb
Vgb
=
Vfb
+
4ss
-
CUX
Solving Eqs. (6 .88 ) and (6 .89 ) for
4,s ...
&eff
as
(6.1 48)
where
5
=
0.5
for n-channel devices, and
5
=
0.25
-
0.30 for p-channel
devices." Using
Qb
from Eq. (6. 78) and
Qi
from Eq....
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 9 potx
... Lett., EDL-2, pp. 46 6-4 68 ( 199 0).
[80] N. Kotani and
S.
Kawazu, ‘Computer analysis of punch-through in MOSFETs’,
Solid-state Electron., 22, pp. 6 3-7 0 ( 197 9).
ED-36, pp .96 3 -9 67 ( 198 9).
( 199 0). ...
Masetti. ‘A .CAD-oriented analytical MOSFET model for
34 5-3 55 ( 197 8).
99 1 -9 97 ( 197 9).
L_.
high-accuracy applications’, IEEE Trans. Computer-Aided De...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 10 pot
... 32, pp. 5 7-6 3 (1989).
[l5] R. Gharabagi and A. El-Nokali, ‘A charge-based model
for
short-channel MOS
transistor capacitances’, IEEE Trans. Electron Devices,
ED-37,
pp. 106 4-1 072 (1990). ... conservative MOSFET model’, IEEE Trans. Computer-Aided Design, CAD-7,
[14] R. Gharabagi and A. El-Nokali, ‘A model for the intrinsic gate capacitances of
short-channel MOSFETYs’,...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 11 pdf
...
Modeling
Hot-Carrier
Effects
For n-channel MOSFETs,
I,,
or
(Ib/Id)
is
a
well accepted monitor for hot-
carrier induced degradation. However, for p-channel MOSFETs both
1,
[45]
and ... prediction method for
hot-carrier-stressed p-MOS transistors’, IEEE IEDM-91,
Tech.
Dig.,
pp. 52 5-5 28
(1988).
[45] W. Weber and F. Lau, ‘Hot-carrier drifts in submicrometer p-ch...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 12 ppt
... depletion HF
C-V
curve from an
MOS
capacitor.
29
__ _-
1-9
g-lng-1 1-9
416
9
Data Acquisition and
Model
Parameter Measurements
I
TEST
SIGNAL
-
GROUND
HP4275A
LCR
METER
-
Fig. ...
0"
W
0
2
-
2
2
4
0
W
I-
<
W
I
I I
I
-5 .0 -3 .0 -1 .0 1.0 3.0
5
GATE VOLTAGE V,,(V)
Fig. 9.14 Typical high-frequency
C-V
plot of an MOS...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 13 ppsx
...
12), North-Holland, New York,
1989.
[13a]
K.
R.
Mistry and B. Doyle, ‘AC versus DC hot-carrier degradation in n-channel
MOSFETs’, IEEE Trans. Electron Devices, ED-40, pp. 9 6-1 04 (1993). ... measurement’, Solid-state Electron., 27, pp. 95 3-9 62 (1984). See
also related papers,
ibid,
pp. 96 3-9 75 and pp. 97 7-9 88 (1984).
[17]
M.
Kuhn,
‘A
quasi-static technique f...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 14 potx
... 10.6 Parameter Extraction Using Optimizer
53
1
lo-'
1 0-2
1 0-3
9
lo4
I
0-5
1 0-6
1
lo-'
1 0-2
1 0-3
9
lo4
I
0-5
1 0-6
1 0-7
10"
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 ...
[l]
G.
T. Wright and
H.
M. A. Gaffur, ‘Preprocessor modeling of parameter and geometry
dependence of short and narrow MOSFET for VLSI circuit simula...
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 15 doc
... manage-
able form, if the following substitutions are made
(1 1.26a)
538
11 SPICE Diode and
MOSFET
Models
s
-
1 0-4
u
1 0-5
3
1 0-6
0
U
z
U
U
0
I
%=
8.99
1 0-1 4
A
r,=
15. 88R ...
IEEE Int.
Conf.
on
Computer-Aided Design, ICCAD-84, pp. 18 4-1 51 (1984).
[13]
S.
L.
Wong and C. A.
T.
Salama, ‘Improved simulation
of
p-
and n-channel
M...