silicon nanowires
A simple route to annihilate defects in silicon nanowires
... morphology of theannealed nanowires is shown in Fig. 1. From thisimage, most of the nanowires can be seen to con-sist of straight and smoothly curved parts. Thediameters of the nanowires are around ... of silicon with a dia-mond structure. Analysis using energy dispersiveX-ray spectroscopy (EDS) attached to the TEMcon®rmed that the nanowires have a crystalline Sicore and an amorphous silicon ... Kowloon, Hong KongReceived 14 April 2000AbstractDefects inside silicon nanowires (SiNW) could be signi®cantly reduced by annealing the nanowires at 1100° C for 6h. High-resolution transmission electron...
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Carbon assisted synthesis of silicon nanowires
... 2003AbstractCarbon-assisted synthesis of silicon nanowires has been accomplished with silicon powders as well as solid sub-strates. The method involves heating an intimate mixture of silicon powder and activated ... product. These nanowires have diameters ranging from 50 to 700nm, with several tens of microns in length. A low-magnification TEM image of the nanowires isshown in Fig. 3c. The nanowires are ... species isgenerated by other means.4. ConclusionsSiNWs have been obtained by reacting silicon powder or silicon substrates with carbon in aninert atmosphere. Carbothermal reduction of thesilica...
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Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism
... usingFig. 1. Synthesis of Si nanowires using Au and Pt as catalysts. (a) Vertically-aligned Si nanowires using Au. (b) Vertically-aligned Si nanowires using Pt. Si nanowires using Ptare longer ... research.4. SummarySi nanowires were successfully synthesized using Au and Pt viathe VLS mechanism. The growth rate of Si nanowires using Pt was2.3 times faster than that of Si nanowires using Au. ... Si nanowires with Au was 5.20lm/min while Pt showed a 2.28 times fastergrowth rate (11.86lm/min), with a 20 sccm SiCl4flow rate in bothcases.Fig. 3 shows the growth rate of the Si nanowires...
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Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism
... Si nanowires 12 , however, such aphotoluminescence from the a-SiNWs was ascribedas arising from defect centers in the amorphous SiOxlayer sheathing the nanowires as well.The silicon nanowires ... 6 produced Si nanowires with VLS growthinduced by a Au metal layer on a Si surface. Re-wxcently, Yu 7 reported on the production of verypure, ultrafine, freestanding silicon nanowires usingan ... 2000Ž.Chemical Physics Letters 323 2000 224–228www.elsevier.nlrlocatercplettGrowth of amorphous silicon nanowires via asolid–liquid–solid mechanismH.F. Yana, Y.J. Xinga,b, Q.L. Hanga, D.P....
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Growth of amorphous silicon nanowires
... crystalline state silicon nanowires with a thin oxide outer layer. Amorphous state silicon nanowires have been reported very slightly.Recently, Yan et al. [16] have prepared amor-phous silicon nanowires ... vertically aligned amorphous silicon nanowires on Au±Pd co-deposition silicon oxide substrate bythermal chemical vapor deposition using SiH4gas at 800°C. The diameter of silicon nanowires is in the ... the nanowires is 30 nm. The alignmentof the nanowires is improved.Compared with our previously work [17], wegot amorphous aligned silicon nanowires insteadof the randomly distributed nanowires. ...
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Highly efficient and stable photoluminescence from silicon nanowires coated with sic
... and hydrogen ions react with silicon oxide to form carbon oxide and silicon car-bide. The carbon oxide gas was pumped out while silicon carbide remained on the silicon nanowire.Fig. 2b shows ... intensive studies on porous silicon related nano-technology have been stimu-lated by its potential applications in silicon- basedoptoelectronic devices [1±12]. One-dimensional silicon nanowire in the ... cubic silicon carbide layer has beenformed just outside the silicon nanowire. TheHRTEM images (Fig. 3b,c) show that a few b-SiCnanoparticles contact the core of the SiNW di-rectly for some nanowires...
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Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane
... were employed as a catalyst for the growth of silicon nanowires (SiNWs).Transmission electron microscopy studies of the materials showed that the nanowires have a diameter of 50–70 nm and a length ... nanowires have excellent single-crys-tal characteristics. Both the CNTs and Fe play a key role in the growth process of the SiNWs. A growth mechanism was proposedfor the growth of silicon nanowires ... temperature was 1100–1400 °Cand the nanowires growth temperature was selected as900–1100 °C. In general, when using pure Fe metal asa catalyst for the growth of silicon nanowires, almostall methods...
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Morphology and growth mechanism study of self assembled silicon nanowires synthesized by thermal evaporation
... methods is the formation of asucient amount of silicon atoms and/or silicon oxide clusters in gas phase from the target powdersof silicon or silicon oxide by laser ablation or hightemperature ... vapor-phase silicon atoms and/or sili-con oxide clusters. When the Ni(Fe)Si2dropletreaches supersaturation after dissolving sucient silicon atoms from the gas phase, precipitation of silicon nanowires ... silicon bulbs are found at the tips of theSiNWs sub-branches.Z. Zhang et al. / Chemical Physics Letters 337 (2001) 18±24 21Morphology and growth mechanism study of self-assembled silicon nanowires...
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Optical spectroscopy of silicon nanowires
... Raman scattering spectra of theSiNWs and crystal silicon. A very sharp andFig. 1. A typical SEM image of the morphology of aligned silicon nanowires of uniform diameter distribution on a silicasubstrate.Fig. ... results on the silica nanowires [5] that was ascribed to originate fromthe oxygen vacancies, while the band peaked at525 nm is close to the results reported for as-grown silicon nanowires [6]. According ... crystalline silicon, and D is the size of crystal. Eq. (1) was used to fitthe Raman spectra. The continuous line in Fig. 3shows the best-fit result, and the average crystalsize of nanowires D...
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Oriented silicon nanowires on silicon substrates from oxide assisted growth and gold catalysts
... Oriented silicon nanowires on silicon substrates fromoxide-assisted growth and gold catalystsYuan Yaoa, Fanghua ... 2005Available online 25 March 2005AbstractHigh-density, oriented silicon nanowires (SiNWs) array were fabricated on (0 0 1) silicon substrates by the oxide-assisted growthmethod assisted with ... many unique propertiesnot found in the bulk materials. Silicon nanowires (SiNWs) are a particularly important 1D nanomaterialbecause silicon is most widely used in electronic indus-try. Besides...
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Polymer assisted synthesis of aligned amorphous silicon nanowires and their core shell structures with au nanoparticles
... Chemical Physics Letters 397 (2004) 128–132Polymer-assisted synthesis of aligned amorphous silicon nanowires and their core/shell structures with Au nanoparticlesXing-bin Yana,b, Tao Xua, ... Conse-quently, a great deal of effort has been made in fabricat-ing Si-based nanostructures, especially silicon nanowires (SiNWs). Upto now, several methods have been em-ployed to produce SiNWs, including ... characteristic of a silicon structure, corresponding tothe second-order transverse acoustic phonon mode(2TA), and the first-order transverse optical phononmode (TO) of silicon, respectively....
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Silicon nanowires as chemical sensors
... interactions between gas molecules and silicon nanowires, as well as the effect of silicon oxide sheath on the sensitivity and the mechanisms of gas sensing with silicon nanowires are discussed.Ó 2003 ... sensitivity of silicon nanowires bundles has been studied. Upon exposure to ammonia gas and water vapor,the electrical resistance of the HF-etched relative to non-etched silicon nanowires sample ... phenomenon serves as the basis for a new kind of sensor based on silicon nanowires. The sensor, made by a bundle of etched silicon nanowires, is simple and exhibits a fast response, highsensitivity...
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Silicon nanowires grown on si(1 0 0) substrates via thermal reactions with carbon nanoparticles
... amount of SiO2and C isS. Botti et al. / Chemical Physics Letters 371 (2003) 394–400 395 Silicon nanowires grown on Si(1 0 0) substrates viathermal reactions with carbon nanoparticlesS. Bottia,*, ... lmwith strongly reduced SiO2content with silicon wires of diameter ranging between 30 and 50 nm decorating the pyramidwalls. The nucleation of the Si nanowires occurs via reduction of the native ... used in similar techniques.Ó 2003 Elsevier Science B.V. All rights reserved.1. Introduction Silicon nanowires with diameter of several tensof nanometers and length of tens of micrometers,exhibit...
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Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation
... correspondingcorrelation between morphology and diameter of nanowires. Nanowires of larger diameter (100–150nm) were inclined to be octopus-shaped, while nanowires of smaller diameter (10–15 nm) wereinclined ... the nanowires in this zone is vapor–liquid–solid (VLS)growth [18]. Energy dispersive spectroscopy (EDS)analysis indicated that the nanoparticles at the tipsof the nanowires only contained silicon ... the silicon nanoparticle chains. They proposed thatnucleation and growth occurring alternatively re-sulted in the formation of chains of silicon nano-particles. The formation of the kinks of silicon nanoparticle...
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Temperature dependence of the quality of silicon nanowires produced over a titania supported gold catalyt
... temperature is 500 °C. Silicon nanowires produced at this temperature have a well-crystal-lized silicon core with a very thin amorphous sili-con dioxide outer layer. The length of the nanowires is in ... (2003) 377–383and silicon tetrachloride (SiCl4). Westwater et al.[7,8] have reported that the use of silane as Sisource to prepare silicon nanowires via CVD yieldsmuch thinner nanowires than ... silicon nanowires produced at four different temperatures. Raman spectra of sil-icon wafer and of the fresh Au/TiO2catalyst are also includedfor comparison. Lower panel: Raman spectra of silicon...
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