metabolic map of grr1δ cells grown on 2 glucose previous page gene and protein expression measurements were overlaid onto a metabolic map of s cerevisiae metabolism enzymes are represented by nodes with the color of the node denot
Báo cáo Y học: The mechanism of nitrogen monoxide (NO)-mediated iron mobilization from cells NO intercepts iron before incorporation into ferritin and indirectly mobilizes iron from ferritin in a glutathione-dependent manner pot
... 30 24 0 at 37 °C The media and cells were separated and the 59Fe levels in each assessed Cells were lysed and the cytosols subjected to native PAGE- 59Fe-autoradiography (see Materials and methods) ... cells were separated and the 59Fe levels in each assessed Cells were lysed and the cytosols subjected to native PAGE- 59Fe-autoradiography (see Materials and methods) (B) Native PAGE- 59Fe-autoradiographs ... levels in each assessed Cells were lysed and the cytosols subjected to native PAGE- 59Feautoradiography (see Materials and methods) (B) Native PAGE- 59Fe-autoradiographs of cellular cytosols treated...
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Báo cáo y học: " Impact of concomitant DMARD therapy on adherence to treatment with etanercept and infliximab in rheumatoid arthritis. Results from a six-year observational study in southern Sweden" docx
... In approximately 2% of the withdrawal cases, the cause of cessation was registered as both treatment failure and AE; for these patients, the cause of withdrawal was subsequently classified as an ... registered: health assessment questionnaire (HAQ) score, patient-scored visual analogue scale for pain (VASpain) and general health (VASglobal), physician 's global assessment of disease activity ... retrieved results for this study Statistical analysis Baseline clinical characteristics were analysed by the KruskalWallis and Mann-Whitney U tests for comparison of groups for continuous variables, whereas...
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Báo cáo y học: " Binary gene induction and protein expression in individual cells" pptx
... induction, most of the cells are still in the transcriptionally inactive state and no protein is synthesized; they constitute the left-peak population in the histogram As soon as the gene template ... level as described in the present study; the other is binary activation of TA in response to upstream signaling With stochastic gene activation, the all-or-none response of protein expression lies ... lifetime and high detection sensitivity favor the appearance of binary protein expression The reverse conditions favor the appearance of graded protein expression Binary responses observed with commonly-used...
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The study of gene and protein vaccines for allergic diseases in mice
... 1.8 .2. 1 Array Fabrication 1.8 .2. 2 Probe Preparation and Hybridization 1.8 .2. 3 Data Collection and Analysis 1.8 .2. 4 Data Validation, Quality, and Statistical Issues 1.8 .2. 5 Limitations of Expression ... asthma and atopic dermatitis), late phase reactions are pronounced The late phase manesfestion includes These responses are caused by the activation of allergen-specific T cells after hours to days, ... the respiratory tract Inhalation of dust mite allergens by sensitive individuals can cause allergy diseases such as bronchial asthma, allergic rhinitis, atopic eczema, and are occasionally fatal...
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Tài liệu Báo cáo Y học: Targeting of malate synthase 1 to the peroxisomes of Saccharomyces cerevisiae cells depends on growth on oleic acid medium pptx
... isocitrate lyase and malate synthase The S cerevisiae enzymes Icl1p, Mls1p, Mdh2p, Cit1p, and Aco1p are noted, these being essential for growth of yeast cells on C2 carbon sources such as ethanol ... in cells grown on media supplemented with ethanol or oleic acid MATERIALS AND METHODS Strains, plasmid constructions and gene disruptions S cerevisiae strains, plasmids and oligonucleotides used ... mitochondrial citrate synthase encoded by CIT1 (and possibly also by CIT3), cytosolic Mdh2p, and extraperoxisomal Aco1p As mentioned previously, malate synthase catalyses the formation of malate...
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Báo cáo "The effect of Cu concentration in soil and phosphorous fertilizer on plant growth and Cu uptake by Brassia juncea L. grown on contaminated soils " doc
... also the role of phosphate in reducing the uptake of Cu by Brassica juncea L 2. 2 Sampling and chemical analysis Plant and soil samples were taken and analysed at the harvest time (45 days after ... plant height and biomass Total Cu in soil and plant tissues, Cu2+ (HNO3 0.43N) in soil was determined by Atomic Absorption Spectroscopy (AAS) Materials and methods Results and discussion 2. 1 Pot experiments ... Effects of Cu application on plan growth and Cu accumulation in plant The results of the effects of added Cu on plant growth and heavy metal accumulation in Brassica juncea L plants are presented...
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Báo cáo khoa học: Cytosolic phospholipase A2-a and cyclooxygenase-2 localize to intracellular membranes of EA.hy.926 endothelial cells that are distinct from the endoplasmic reticulum and the Golgi apparatus pdf
... and A5 49 cells [30] In order to establish the validity of the EA.hy. 926 cells as a model for studies on cPLA2 -a in endothelial cells, expression levels of cPLA2 -a in EA.hy. 926 cells and HUVECs were ... compared Equivalent amounts of protein were separated by SDS ⁄ PAGE and immunoblotted for cPLA2 -a Lysates from the parental A5 49 cell line and HeLa cells were also analysed The results (Fig 1A, B) ... and site of cPLA2 -a relocation Comparison of the location of cPLA2 -a in EA.hy. 926 endothelial cells with markers for specific cellular organelles The relocation of cPLA2 -a in endothelial cells...
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báo cáo hóa học:" Biocompatibility of Poly-ε-caprolactone-hydroxyapatite composite on mouse bone marrow-derived osteoblasts and endothelial cells" doc
... immunocytochemistry stains (Panel A, 20 0×) Alkaline phosphatase (ALP) activity of osteoblasts was assayed using an ALP kit and visualized as the pink color (Panel B, 20 0×) In addition, von Kossa staining was ... out the cell culture, scaffold preparation, biochemistry assessment, acquisition, and analysis of data SYY participated in the image and statistical analysis All authors read and approved the ... of the ALP assay was normalized against the amount of total DNA in each sample The nitric oxide generated by endothelial cells on scaffolds was assessed using the Nitric Oxide Colorimetric Assay...
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Báo cáo toán học: " The structural and optical properties of GaSb/InGaAs type- quantum dots grown on InP (100) substrate" ppt
... materials, such as GaSb/GaAs [8-10], InAlAs/InP [11], InP/InGaP [ 12, 13], InP/GaAs [14], GaAsSb/GaAs [15], and InAs/GaSb [16, 17] The reason is that they offer comparatively large bandgap energies ... height size distribution of GaSb/ InGaAs QDs on InP (100) substrate, the AFM and STEM measurements were carried out Figure shows the AFM and STEM images of GaSb/In0.53Ga0.47As QDs and the histogram ... and STEM images of GaSb/In0.53Ga0.47As QDs and histogram of the height of GaSb/In0.53Ga0.47As QDs (a) The AFM image of GaSb/In0.53Ga0.47As QDs, (b) histogram of the height of GaSb/In0.53Ga0.47As...
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Báo cáo hóa học: " Improved conversion efficiency of Ag2S quantum dot-sensitized solar cells based on TiO2 nanotubes with a ZnO recombination barrier layer" pdf
... this study, 2, 4, and cycles of Ag2 S deposition were performed (denoted as Ag 2S (2) , Ag 2S( 4), and Ag 2S( 8), respectively) Finally, the as-prepared samples were dried in a N2 stream The preparation ... spherical nanoparticles on the TNTs and the wall thickness of the Ag S( 4)/TNTs is similar to that of the plain TNTs In addition, a uniform distribution of the Ag 2S nanoparticles with diameters of approximately ... increase in the cycles of Ag 2S deposition, resulting from an increased amount of Ag 2S nanoparticles For the performance comparison of as-prepared Ag2Ssensitized TNT and ZnO/TNT electrodes, the...
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Báo cáo hóa học: " Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE" docx
... Authors’ contributions RHM carried out DLTS and LDLTS measurements, prepared figures and wrote the first draft MS, MA, AK and MH participated in the analysis of the data and the preparation of ... their argument Experimental details A set of six AlGaAs samples with different Be-doping concentrations grown by MBE on semi-insulating (100) and (311 )A GaAs substrates have been studied The samples, ... field-dependent studies that both charged and neutral like traps exist in the samples The traps showing the effect of electric field on the carrier emission rates are ionised after carrier emission and carry...
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Báo cáo hóa học: " Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)" pptx
... magnetic domains are randomly distributed in MFM images for MnAs films grown on both GaAs (110) and GaAs (001) We also observed the cross-sectional MFM images for MnAs/GaAs (001) and MnAs/GaAs ... films have a well-ordered crystal orientation and a sharp interface between MnAs and GaAs Judged from the chromatic aberration of MnAs and GaAs substrate, the thickness of the epitaxial MnAs film ... carried out the MFM and SQUID measurements, the statistical analysis and drafted the manuscript JZ conceived of the study and participated in its design and coordination All authors read and approved...
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Báo cáo hóa học: " Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates" pdf
... character of the grown SLEG Figure SEM images of a monolayer graphene islands grown on the C-face of an 8° off-axis 4H-SiC substrate (a, b) Images of the largest homogeneous SLEG islands, (c) early ... http://www.nanoscalereslett.com/content/6/1/141 Page of Figure AFM images of continuous and almost free standing monolayer graphene islands grown on the C-face of an 8° off-axis 4H-SiC substrate (a) at a ... shown the possibility to grow large islands of monolayer graphene on the C-face of on- axis and 8° off-axis commercial 4H-SiC wafers The graphene layers are continuous, almost free-standing and show...
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Báo cáo hóa học: " Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs " pot
... (311)B sample shows two peaks associated with defect states labelled EB1 and EB2 Trap EB1 appears as a shoulder of the main peak EB2 at temperature *390 K and is resolved by using LDLTS as shown ... 2. 6 2. 7 2. 8 2. 9 -1 1000/T (K ) Fig a DLTS spectra of GaAs/AlGaAs multi-quantum well structures grown on (100) and (311)B GaAs substrates The inset shows the peaks resolved by Laplace DLTS technique; ... the Al composition Their results show that the decrease in the thermal emission rates with increasing field is strongest for the layers having medium Al compositions (Al: 30–40%) and smallest for...
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báo cáo hóa học:" The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate" docx
... height size distribution of GaSb/InGaAs QDs on InP (100) substrate, the AFM and STEM measurements were carried out Figure shows the AFM and STEM images of GaSb/ In0.53Ga0.47 As QDs and the histogram ... GaSb/In0.53Ga0.47As QDs (a) The AFM image of GaSb/In0.53Ga0.47As QDs, (b) histogram of the height of GaSb/In0.53Ga0.47As QDs, and (c) the STEM image of GaSb/In0.53Ga0.47As QDs Shuhui et al Nanoscale Research ... histogram of the height of GaSb/In 0.53 Ga 0.47 As QDs As shown in Figure 1a, the statistical data indicate that the density of the QDs is approximately × 109 cm -2 and that the shape of GaSb QDs is rectangular-shaped...
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Báo cáo hóa học: "Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate" docx
... layer is grown on the GaAs(111)B substrate To ensure n-type doping of the buffer layer, a separate sample has been grown on the GaAs(111)B semi-insulating substrate at the same growth conditions ... oxygen plasma until the tips of GaAs NWs are exposed Conventional Ohmic contacts for the backside of n-type substrate are fabricated by electron-beam evaporating of AuGe (30 nm) and Ni/Au (10/150 ... we also present the schematics of device structure (Fig 1d) Results and Discussion I–V characteristics are measured using a Keithley 23 8 source meter The samples are placed on a copper base from...
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Báo cáo hóa học: " The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate" ppt
... height size distribution of GaSb/InGaAs QDs on InP (100) substrate, the AFM and STEM measurements were carried out Figure shows the AFM and STEM images of GaSb/ In0.53Ga0.47 As QDs and the histogram ... GaSb/In0.53Ga0.47As QDs (a) The AFM image of GaSb/In0.53Ga0.47As QDs, (b) histogram of the height of GaSb/In0.53Ga0.47As QDs, and (c) the STEM image of GaSb/In0.53Ga0.47As QDs Shuhui et al Nanoscale Research ... histogram of the height of GaSb/In 0.53 Ga 0.47 As QDs As shown in Figure 1a, the statistical data indicate that the density of the QDs is approximately × 109 cm -2 and that the shape of GaSb QDs is rectangular-shaped...
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Báo cáo hóa học: " Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates" potx
... shows AFM images of InAs QDs grown on (In)GaAs buffer layer grown on GaAs Fig AFM images for InAs/ (In)GaAs QDs grown on GaAs (311) B and (100) substrates a InAs/InGaAs (311) B; b InAs/ InGaAs (100); ... IF bonds consisted of In–Sb bonds rather than the Ga–As bonds [20 , 21 ] This is due to additional IF strain offered by the higher atom sizeof In and Sb than that of Ga and As However, one cannot ... of larger size on the GaAs (100) substrates than those on GaAs (311) B substrates The average density, height, and lateral size for these two samples are 4.8 108 cm -2 and Nanoscale Res Lett (20 09)...
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Báo cáo hóa học: " Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations" potx
... shown as a bright spot spontaneously by the formation of the IMF at the GaSb/ GaAs interface Further proof of spontaneous relaxation of IMF-based samples is provided via the SAED double spot pattern ... that the GaSb layer is completely relaxed Further proof of strain is also achieved from SAED measurements, which shows that GaSb and GaAs has lattice constants almost similar to the expected lattice ... atoms are deposited on Ga-rich GaAs surface before starting the growth of bulk GaSb epitaxial layer If Sb is deposited on As-rich GaAs surface instead of Ga-rich GaAs surface, the resulting epitaxial...
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