... functions of electrons inside the QCB andthe conduction band of NSTO can overlap and interact with each other The implications of this mechanism are far-reaching especially now the entire semiconductor ... ofthe band diagram ofthe device with no voltage bias The middle defect band represents the defect levels of LAO, which are widely distributed in the bandgap at ~2 eV below the conduction band ... by means of vacuum reduction or Argon-ion milling after the realization of atomically flat nanoscale film growth on LAO substrates In addition, we studied the origin ofthe 2DEG at the LAO/STO...
... with a slope of 21·5 G/A The ampere-turns were determined to produce the maximum possible magnetic field onthe axis The size andthe power consumption ofthe solenoid coils were the limiting ... investigate the plasma parameters to optimize the beam current A conventional ECR ion source uses theprincipleof adiabatic invariance for mirror reflection, and high magnetic field mode of operation to ... iron jacket, and amp-turns (NI) The optimum values of NI for the side and middle solenoid coils were obtained to be 12950 and 8250 respectively Based on these parameters, the total length of the...
... variation of length of TiO2 NT as a function of period of anodization (the corresponding SEM images of each datum showing the lengths ofthe tubes are given in the Supporting Information, Figures ... proportional to the fluoride concentration and to the duration of anodization We confirmed this correlation, but the tubes adhered more weakly to the substrate when the tubes grew longer To discover optimal ... shifts the conduction band potential of TiO2 toward negative and leads to the increase of VOC Furthermore, TBP suppressed the recombination between the injected electrons and triiodide anions that...
... Association (KOITA) Authors’ contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging ofthe solar cells SH and YK helped design the experimental study ... illumination of100 mW/cm2 under an open-circuit condition and in a frequency range of 0.1 Hz to 100 KHz Results and discussion Figure shows the FE-SEM images of deposited (a) graphenes, (b) SWNTs, and ... onthe FTO substrates Deposited graphenes (a) were identified by their different contrasts, and they showed the presence of graphene wrinkles formed during the EPD deposition In the case of the...
... Association (KOITA) Authors’ contributions HK fabricated the cells and wrote the paper HK and HC did the characterization and imaging ofthe solar cells SH and YK helped design the experimental study ... illumination of100 mW/cm2 under an open-circuit condition and in a frequency range of 0.1 Hz to 100 KHz Results and discussion Figure shows the FE-SEM images of deposited (a) graphenes, (b) SWNTs, and ... onthe FTO substrates Deposited graphenes (a) were identified by their different contrasts, and they showed the presence of graphene wrinkles formed during the EPD deposition In the case of the...
... contamination Onthe other hand, the current ofthe oxide-capped nanotip retains a sharp curve Furthermore, the turn -on field ofthe oxide-capped sample is slightly improved compared with the uncapped one ... Medvid A, Onufrijevs P, Alexan Mychko A: Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons Nanoscale ... formation at different etching times The coated PR on top ofthe tips serves as the shielding mask to protect the underlying silicon (Figure 2a) The etching depth of silicon is increased upon etching...
... photons due to their much higher absorption depth as compared to short-wavelength photons Onthe other hand, a significant amount ofthe front optical losses is contributed by the front TCO andthe ... the voltage applied to the parallel plates, and accelerated towards the substrate Through the interaction of ion bombardment, adsorption, migration anddissociationofthe species, a series of ... films, the optimisation ofthe deposition conditions is required to achieve films with low defect densities andthe above-mentioned properties Chapter will provide details onthe optimisation process...
... result of electron energy losses in thin films demonstrating the existence of plasmon mode near the surface ofmetal This study represents thefirst theoretical description of surface plasmons In ... the excitation wavelength ofthe laser and overlapping with an electronic absorption band of interest Finally, this thesis demonstrated the design and fabrication of a periodic array of Au nanorods ... gratings, and attributed it to the excitation of surface plasmon resonances onthe gratings A major contribution to thestudyof surface plasmons was made in 1968 when Andreas Otto [16] and Erich...
... is the outer dimension ofthe SRR unit cell, p the period ofthe SRRs metamaterials, w the line width ofthe SRR structure, and t the thickness ofthe SRR It should be noticed that the resonance ... current path ofthe SRR and capacitance LC is mainly determined by the gap size ofthe SRR andthe dielectric properties ofthe surrounding environment [44] With the polarization ofthe electric ... relationship between the resonance frequency (fR) andthe structural size ( ab ) is no longer held due to the saturation ofthe limited free electron kinetic energy [6] The strength ofthe resonance...
... function of Al content x ofthe AlxGa1 xN barrier layer [10] conduction band edge energy, and EC is the conduction band offset at the AlxGa1-xN/GaN interface Fig 1.4 plots the calculated ns of ... circuit ofthe metal- oxide-semiconductor structure, showing the oxide capacitance Cox, the capacitance ofthe depletion region Cd, the capacitance Cit and resistance Rit ofthe interface states, and ... electron velocity (3 × 107 cm/s) and saturation electron velocity (1.5 × 107 cm/s) [4] These GaN properties together with the combination of a large conduction band offset and a high electron mobility...
... processor, which is the foundation of next-generation central-processing-unit (CPU) 1.6 Thesis Organization The organization ofthe thesis is divided in the following chapters In Chapter 2, the recent ... to the bandwidth-efficiency tradeoff This tradeoff results from the opposite requirement ofthe thickness ofthe photoabsorption layer for high bandwidth and high efficiency [2.29] hu SiO2 Metal ... single mode fiber is shown together To obtain the intrinsic characteristics ofthe Ge JFET, the contribution of source-drain current ofthe un-illuminated part ofthe channel in ID calculation...
... to this theory, the gas first adsorb onthe surface ofthe rubber depending onthe inherent properties ofthe gas, then the gas “comes to evaporate” and reappears onthe other side ofthe membrane ... Barrer=1X10-10cm3(STP)-cm/s-cm2-cmHg), the demonstration of temperature dependence of permeability and diffusivity follows the Arrhenius equation andthe dual mode concept of sorption in glassy polymers These models later ... unwavering and unconditional love andsupport My parents and parents’ in-law also deserve the special recognition for their love and continuous encouragement andsupport Lanying Jiang ii TABLE OF CONTENTS...
... found andthe Si4+ peak becomes stronger and shifts to 104.0 eV, which corresponds to SiO2 bonding [15] Figure 2.7 shows the depth profiles ofthe atomic concentration The points with high Si concentration ... formed in the films as a result of post-deposition thermal annealing in high vacuum and thermal oxidation The phase separation and Si NC formation in correlation with the optical properties ofthe ... postdeposition processing conditions onthe structures and PL properties of Si NCs were studied Based onthe post-deposition processing effects, the origins ofthe PL - 11 - Chapter 1: Introduction and...
... [30] 17 Chapter 1: Introduction The easiest and more compact solution is the integration of one diode in series with the cell, at least for the resistive type of memories, andthe use of intermediate ... Preparation and Characterization ofthe PKEu Copolymer 63 3.2.2 Device Fabrication and Characterization 64 3.3 Results and Discussions 65 3.4 Conclusion 77 Reference 78 CHAPTER Material Properties and ... enhance our understanding ofthe application of organic and polymer materials to the organic memory device and it may also contribute to further investigations onthe material selection for organic...
... Objectives and motivation In this study, we focused onthe fabrication and characterization of two kinds of spintronic materials: Fe3O4 and Ge1-xMnx The former is a kind of half metal, while the latter ... lack ofthe ability in charge control limits their further application At the same time, the semiconductors used for devices and integrated circuits not contain the magnetic ions and are nonmagnetic ... required Among many ofthe possible candidates, the idea of using spin in electronics, i.e., spintronics, has attracted great attention [3,4] Spintronics involves thestudyof active control and manipulation...
... 1991] Afronso and Pinho [2000] reported the transport flux of MgSO4, MgCl2 and Na2SO4 across the NF membrane, the effect ofthe anion valence andthe feed concentration onthe salt rejections They ... weaker, while the lower rejection of MgSO4 than Na2SO4 corresponds to the increasing order ofthe cations charge density When the concentration in the feed is low andthe concentration ofthe fixed ... the ion exclusion principleThe lower rejection of MgCl2 than MgSO4 corresponds to the decreasing order ofthe anion charge density, i.e the anion repulsion forces become 20 Introduction Chapter-I...
... measurements ofthe TLM device andonthe validity of assumptions made in the analysis For example, the resolutions ofthe dimensional measurements ofthe width and length ofthe contacts and their ... address the issues concerned in the formation of good ohmic contact onthe source and drain regions, andthe Schottky gate contact This is followed by the reporting ofthe successful fabrication of ... layer andthe channel layer: ρ(z) = e[n(z) – p(z) + NA – ND] (2.7) where n(z) and p(z) are the densities ofthe electrons and holes, and NA and ND are the densities ofthe ionized donors and acceptors,...
... of thesis 1.5 Organization of thesis References Chapter Literature Review 2.1 Introduction 2.2 Theory of lateral spin valves 2.2.1 Theory of spin injection, detection and accumulation 2.2.2 Theory ... interaction 42 Figure 4.1 SEM images ofthe two different kinds of lateral spin valve geometries fabricated andthe dimensions ofthe electrodes The inset shows the overview ofthe devices andthe ... field ofthe narrower electrode The magnetization states ofthe electrodes corresponding to the respective portions ofthe curve are shown in the red boxes The black (blue) curve corresponds to the...
... them is the scale ofthe lattice constant In the case of ordinary crystals, the lattice constant is onthe order of angstroms Onthe other hand, it is onthe order of wavelength ofthe relevant electromagnetic ... three-dimensional (3D) Photonic crystals can offer us one solution to the problem of optical control and manipulation If the dielectric constants ofthe materials in the crystals are different enough, and ... templating and to prove their stop bandgaps by optical characterization 19 1.3 Organization ofthe Thesis This thesis is structured as follows Thefirst chapter serves as introduction ofthe basics, the...
... direction 1.3 Organization of Thesis The outline ofthe thesis is as follows In chapter 1, the background andthe objectives of thesis will be stated The summary of theories for various MR effect and ... is added on to the GMR effect The GMR effect depends onthe relative orientation of magnetization between neighboring layers, therefore information onthe direction of magnetization of each layers ... electrons and Ar ions is spontaneously generated upon voltage application andthe Ar gas glows purple from the electronic excitations Argon ions are accelerated onto the target material, and by...