... groups of rwx: r stands for read permission, w stands for write permission, and x stands for execute permission The three groups represent the permissions for the owner, the group and others respectively ... (I can read and execute the program, and nobody else can anything with it) The permissions for the draft document would be rw-r - (I can read and write, the group can read, and others can’t ... 17:00:47 The Complete FreeBSD (filesys.mm), page 195 195 Chapter 10: File systems anddevices FreeBSD devices UNIX refers to devices in the same manner as it refers to normal files By contrast to normal...
... 2 List the seven layers of the OSI model and the encapsulation unit used to describe the data grouping at each layer Also list the networking devices that operate at each layer, if applicable ... devices that operate at each layer, if applicable Layer # Name Encapsulation Unit or Logical Grouping Devices or Components that Operate at this Layer 2-2 CCNA 1: Networking Basics v 3.0 - Lab 2.3.7...
... 2 List the seven layers of the OSI model and the encapsulation unit used to describe the data grouping at each layer Also list the networking devices that operate at each layer, if applicable ... devices that operate at each layer, if applicable Layer # Name Encapsulation Unit or Logical Grouping Devices or Components that Operate at this Layer 2-2 CCNA 1: Networking Basics v 3.0 - Lab 2.3.7...
... associated with Mn and Co The most likely candidates in that sense are the absorption bands at 1.9 and eV and the red MCL bands at 1.84 and 1.89 eV The absorption and the MCL bands seem to be closely ... flux and the Ag islands appears to result in surface and subsurface oxygen diffusion in the metal island, perhaps involving the intermediate formation of Ag2O Zn atoms impinging on the Ag island ... absorption bands anywhere but at the bandedge region The first 27 28 Y.W Heo et al / Materials Science and Engineering R 47 (2004) 1–47 band observed with the threshold near 0.75 eV and the second...
... parameter and EAO and EZnO are the band-gap energies of compounds AO and ZnO, respectively While adding Mg or Be to ZnO results in an increase in band gap, and adding Cd leads to a decrease in band ... between perfect single crystals and nanoparticles [29-31] as well as to predict and to realize in nanoparticles and perfect bulk crystals new and interesting properties and applications as the advanced ... crystals and nanopar‐ ticles as well as to predict and to realize in nanoparticles and perfect bulk crystals new inter‐ esting properties and applications The long-term ordering of doped GaP and other...
... Acoustic Waves: Theory andDevices hereinafter referred to as the "Work"; and Whereas, the Assignor retains the right to print, publish and sell the Work solely on an on-demand" basis and the Assignee ... eJ%, and BH are unit vectors in the directions of E and H, respectively, and the Poynting vector is (because E and H are orthogonal) P=-EoHo (1.26) Furthermore the E and H fields are in phase and ... 10 and 11)** 1 optics and piezoelectricity acousto-optics (Chapter 4)** (Chapters and 8) acousto-optic interaction (Chapter 9)** + thickness and lateral field coupling constants; single- and...
... discussed in (4) and (3,does not occur Thus, if for mild-steel plates and rivets, a 1% (4.5) Jointsand connections 80 we can disregard the modes of failure discussed in (4) and (5) In the case ... d andf; r = 0.050 m For bolts g and h, r = g C = a C = 0.0902m Then 23 = 4(0.0902)' + 2(0.050)' = 0.0376 m' Now e = 0.225m and P=5OlcN Pe = (0.225) (50 x lo3) = 11.25 x lo3Nm Then 85 Jointsand ... bolts and the plates may become excessive; the total bearing load taken by a bolt is Pb, Figure 4.3, so that the average bearing pressure between a bolt and its surrounding hole is Pb td Joints and...
... protein-chips and labon-a-chip devices are more challenging compared to gene-chips and these devices are anticipated to play an important role in medicine of the future, which will be personalised and ... with understanding these effects and their influence on material properties Nanotechnology aims to exploit these effects to create structures, devices, and systems with novel properties and functions ... and in vivo in dogs (thrombogenicity) and demonstrated reduced thrombogenicity and improved mechanical properties, i.e better recovery to original shape, very good handling characteristics, and...
... internists; and (2) telephone or in-person individual interviews and focus groups of type and type diabetes patients who had used inhaled and pump delivered insulin in either the U.S or Australia, and ... experts and patients received an honorarium for their participation in the interviews Data from all interviews were coded and hand sorted and qualitatively analyzed to identify common themes and ... drug and treatment delivery system is multifaceted To fully understand these impacts, the patient's perceptions of the impact of treatment on functioning and well-being must be identified and...
... 5, and (b) Iridium polymers andand platinum polymer were irradiated at 462 and 433 nm, respectively (metallopolymers 5, were 0.05 g/L and metallopolymers were 0.5 g/L) Synthesis, and Photo- and ... 10 and 12 and platinum polymers 11 and 13 were irradiated at 462 and 433 nm, respectively (at 0.5 g/L) EL behavior of the metallopolymers EL behavior of devices containing the metallopolymers and ... was efficiently combined to the ligand polymers after polymerization The procedures of the ligand polymers andand metallopolymers 10-13 are shown in Schemes and The conjugated polymer was prepared...
... for (a) devices M, O and R, (b) devices N, P and U, of which the structures are shown in Table (at 4.0, 4.0, 8.0, 8.0, 10.0, and 10.0 V, respectively) The origin of the small luminescnet bands from ... dichloromethane shows the typical allowed bands at 465 and 398 nm, and the much weaker forbidden bands at 347 and 280 nm, respectively, which display vibronic structure and are distinctly shifted to lower ... for DPhDPF, and 364 nm for SDPF, respectively The PL spectrum of the DPF, DPhDPF, and SDPF and films shows blue emission peaks at 421, 422, and 422 nm in solution, and 460, 465, and 465 nm in...
... Material, Process andDevices (TGA) in N2 at a heating rate of 20 °C/min dendrimers TP1 and TP2 exhibit high glasstransition temperatures (Tg’s) at 142 and 130 °C, respectively, and decomposition ... synthesis, and also for both attaining sufficient solubility and avoiding the use of long alkyl chains The UV-vis absorption and 50 Organic Light Emitting Diode – Material, Process andDevices PL ... 76 and 80 Compared with that of pyrene 76, the absorption spectra of both 79 and 80 were broad and less well-resolved, and the longest-wavelength, -* transition absorption maximum of 79 and...
... consist of two cyclometalating ligands (C^N) and one ancillary ligand By changing the functional groups in the ancillary ligand or introducing a novel ancillary ligand, the photophysical properties ... with polypyridyl ligands was developed a long time ago in the framework of crystal field theory and ligand field theory 76 Organic Light Emitting Diode – Material, Process andDevices using quasi-octahedral ... with 5d-AOs and higher dipole moments Substitution of ligands can influence HOMO and LUMO energies and their mixing with metal 5d-AOs, thus modulating the phosphorescence lifetime and tuning of...
... PHOLEDs devices fabricated for the present study Devices A and B have a conventional multilayer structure containing hole and electron transport and injection, and hole blocking layers with CBP and ... the TCTA and CBP CCL layers devices, the deep HOMO and high LUMO levels of TCTA and CBP block the movement of holes and electrons at the Bebq2:Ir(piq)3/CCL interface Therefore, holes and electrons ... wide band-gap hole and electron transporting layers, narrow band-gap host and dopant materials, and charge control layers (CCL) Bis(10-hydroxybenzo[h] quinolinato)beryllium complex (Bebq2) and...
... the conduction and emission processes in single layer devices, we have fabricated following several devicesand investigated We have made devices C and D without Ir(piq)3 dopant and results were ... displayed in Fig 15, both devices C and D (undoped) show J-V characteristics similar to Ir(piq)3 doped devices A and B, respectively Furthermore in our devices A and B, hole and electron injection ... identical devices but with different dopant concentrations lying between 0.5 and wt%; 128 Organic Light Emitting Diode – Material, Process andDevices and, (3) the quenching of both luminance, and...
... ordered film structure, and very high electron mobility has been reported (Tatemichi et al., 2006) On the other hand, NPD and TAPC having triphenyl amine structure are very standard hole transporting ... for OLED devices They show comparably high hole mobility and good film formation Figure shows the hetero-layered structure OFET with top contact and the molecular structures of m-MTDATA and NPD ... m-MTDATA and NPD interfacial layer, and the single layer C60 OFETs on OTStreated, HMDS-treated, and non-treated substrates Also in this case, the ID – VG curves for the hetero-layered devices...
... Process andDevicesdevices with BCP their current efficiency significantly increase from 3.7 to 9.6 cd/A, and power efficiency increase from 0.87 to 1.46 lm/W (at 100 cd/m2) for devices without and ... Material, Process andDevices EL spectra were quite understandable (Wu et al, 2005) The highest EL intensity showed the devices with AcacZnBTz followed by those with Zn(BTz)2, Znq2, and Zn(NBTz)2 ... luminance/voltage and efficiency characteristics of four type identical devices with different EML It was established that the current densities and the luminescence decreased and the turn-on voltage of devices...
... Part OLED Processes andDevices Unconventional, Laser Based OLED Material Direct Patterning and Transfer Method 1Applied Seung Hwan Ko1 and Costas P Grigoropoulos2 Nano Tech and Science Lab, Department ... Emitting Diode – Material, Process andDevices Generally, organic materials have strong ultraviolet (UV) and infrared (IR) absorption bands attributed to electronic and vibrational transitions, respectively ... large-area displays, mask lifetime and cleaning, particle contamination, and thermal expansion effects In this chapter, unconventional OLED material direct patterning and transfer methods especially...
... masses of the valence band maximum(VBM) are consistent with the reported good conductivity, and (iv) the predicted indirect band gap and optical band gap of CuBO2 are 3.21 eV and ~5.1 eV, respectively ... giving an indirect band gap of 1.94 eV, with the smallest direct band gap situated at Γ and measuring 3.21 eV Fig GGA+U calculated bandstructure of CuBO2 The top of the valence band is set to eV ... three spectra, as shown in Fig A band gap was observed between the valence band edge in the PES spectrum and the conduction band edge in the IPES spectrum The band gap estimated was about 3.5 eV...
... Material, Process andDevices (ZITO, 6.1 eV), Ga-In-O (GIO, 5.2 eV), and Zn-In-O (ZIO, 5.2 eV) films composed with In, Sn, Ga, Zn, and O components have particularly interesting transparency and conducting ... N2, H2, and N2-H2 condition, or the insertion of an anode interfacial layer with insulating wide band gap between the HTL and the anode Fig 10 Kelvin probe current for a pristine ITO anode and an ... resistance and work functions of ITO(100 Ω/), ITO(12 Ω/), ZnO, AZO and polyaniline(PANI) films were measured as shown in Table 1.(Guan et al., 2009) And also, the effect that the dopant, solvent, and...