... Reference Data in Enterprise Databases: Binding Corporate Data to the Wider WorldMalcolm Chisholm Data Mining: Conceptsand Techniques JiaweiHanandMicheline Kamber Understanding SQL and Java ... Series in Data Management SystemsSeries Editor: Jim Gray, Microsoft Research Data Mining: Conceptsand Techniques, Second Edition Jiawei HanandMicheline Kamber Querying XML: XQuery, XPath, and SQL/XML ... Foundations of DataMining 66511.3.2 Statistical DataMining 66611.3.3 Visual and Audio DataMining 66711.3.4 DataMiningand Collaborative Filtering 67011.4 Social Impacts of DataMining 67511.4.1...
... ComponentsOracle9i DataMining has two main components:■Oracle9i DataMining API ■ Data Mining Server (DMS)1.2.1 Oracle9i DataMining APIThe Oracle9i DataMining API is the component of Oracle9i DataMining ... faster than the viii Basic ODM Concepts 1-11Basic ODM Concepts Oracle9i DataMining (ODM) embeds datamining within the Oracle9i database. The data never leaves the database — the data, data ... SQL/MM for Data Mining. JDM has also influenced these standards. Oracle9i DataMining will comply with the JDM standard when that standard is published.1.2.2 DataMining ServerThe Data Mining...
... (Estonia), EVCA (Europe), FVCA (Finland), HVCA (Hungary), IVCA (Ireland), LTVCA (Lithuania), NVCA (Norway), NVP (the Netherlands), PPEA (Poland), SECA (Switzerland), SEEPEA (South Eastern Europe), ... 14 16 18UK & Ireland DACH Nordics France & Benelux Southern Europe CEE€ billion by country of management by country of originDACH: Austria, Germany, Switzerland Southern Europe: Greece, ... 58.865.410.313.525.90102030405060Buyout€ billion Yearbook 2012 Activity Data on Fundraising, Investments and Divestments by Private Equity and Venture Capital Firms in Europe 9 May, 2012 | Creating...
... gate oxide by tunneling. This is a quantum mechanical effect, and the amount of current depends on the work function between the silicon and the insulator and the insulator thickness and the ... Tuning Using Adaptive Voltage and Body Biasing,” International Sympo-sium on Circuits and Systems, pp. 5–8, May 2005. [3] J. T. Kao, M. Miyazaki, and A. P. Chandrakasan, “A 175-mV Multiply-Accumulate ... current is due to band-to-band tunneling in the presence of high electric field and traps in the band gap. If the electric field is high enough, carriers can simply tunnel across the band gap. However,...
... process options and emerging design technologies. Basically, the assimilation of distinct high-performance, low operating power, and low standby power devices requires circuits and systems that ... [V]ABBmaxVthAVSminVth Figure 2.5 Frequency scaling and tuning for the 65nm LP-CMOS ringo. Let us now investigate the frequency-scaling and tuning ranges offered by AVS and ABB in 65nm LP-CMOS. For this purpose, ... leakage savings achieved by AVS and ABB are also impacted by process parameter variations. Subthreshold leakage strongly depends on process state, while gate-oxide leakage and GIDL are only weakly...
... both the active and the standby modes and raises VTH by 0.25V in the standby mode. Chapter 2 Technological Boundaries of Voltage and Frequency Scaling 45 based on voltage and frequency ... only by transistor size ratio and independent of VDD, temperature, and process variation. If Vb is generated by dividing voltages between VDD and VSS by resistors (Vb = λ VDD), and ... the lowest power supply voltage, Vmin, and k, k’, and γ are constants determined by design parameters. γ is larger than 1 and typically smaller than 2.5. The P–f curve is composed of two...
... 0.200.050.10.150.2VIN−NAND, VOUT−NORVOUT−NAND, VIN−NOR NANDNOR Figure 5.3a Butterfly plot of functional NAND and NOR gates. (â [2007] IEEE) 0 0.05 0.1 0.15 0.200.050.10.150.2VIN−NAND, ... combined to handle both static and dynamic variations in an efficient and low-overhead way. References [1] K. A. Bowman, S. G. Duvall, and J. D. Meindl, “Impact of die-to-die and within-die ... too slow, and RBB to reduce frequency and leakage power of dies that are too fast and leaky. Adaptive VCC+VBS, on the other hand, recovers these dies above the active power limit by (1) first...
... References [1] V. Gutnik and A. Chandrakasan, “Embedded power supply for low-power DSP,” IEEE Trans. VLSI Syst., vol. 5, no. 4, pp. 425–435, Dec. 1997. [2] A. Sinha and A. Chandrakasan, “Dynamic ... set, and in steady state, the ratio of the NMOS to PMOS ON-times is given by the following equation: DDDDBATPNVVV −=ττ (5.4) where τN and τP are the NMOS and PMOS ON-times and ... Naveen Verma, Anantha Chandrakasan the help of the automatic frequency scaler block. This block changes the switching frequency as the load power delivered changes, thereby reducing the switching...
... essentially an FET wire; and NAND and NOR gate paths consisting of a series of 4-high NAND and 3-high NOR gates respectively. Simulations were performed at two frequencies, F and F/3 where F was ... jitter, aging, and NBTI, have an uncorrelated, random component. A single critical path monitor can track these random changes if sampled over time as they will have a zero mean and constant ... less dependent on the integrated circuit’s design than system-atic noise and it is characterized by a number of statistics such as its mean and standard deviation. Systematic noise results from...
... result of having 15,878 critical paths rather than only one. On the other hand, the frequency island domains are penalized by a best case of 13.0% and worst case of 18.7%. The resulting mean speedups ... proposed by Butts and Sohi [5] and complements Wattch’s dynamic power model. The model uses estimates of the number of transistors (scaled by design-dependent factors) in each structure tracked by ... variations and looked at how different adaptive tech-niques help eliminate some of the margins. We categorized these techniques as “always-correct” and “error detection and correction” techniques. ...