| Tài liệu tham khảo |
Loại |
Chi tiết |
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Sách, tạp chí |
| Tiêu đề: |
Emerging memories: resistive switching mechanisms and current status,” "Reports Prog. Phys |
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Sách, tạp chí |
| Tiêu đề: |
Nonvolatile resistive switching memories-characteristics, mechanisms and challenges,” "Prog. Nat. Sci. "Mater. Int |
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Sách, tạp chí |
| Tiêu đề: |
Bipolar resistive switching of chromium oxide for resistive random access memory,” "Solid. State. Electron |
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Sách, tạp chí |
| Tiêu đề: |
Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory,” "Electrochem. "Solid-State Lett |
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Sách, tạp chí |
| Tiêu đề: |
Resistive switching phenomena in thin films: Materials, devices, and applications,” "MRS Bull |
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Sách, tạp chí |
| Tiêu đề: |
Imaging the three-dimensional conductive channel in filamentary-based oxide resistive switching memory,” "Nano Lett |
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Sách, tạp chí |
| Tiêu đề: |
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook,” "Nanotechnology |
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Sách, tạp chí |
| Tiêu đề: |
Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers,” "J. Appl. Phys |
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Sách, tạp chí |
| Tiêu đề: |
Evidences of oxygen-mediated resistive-switching mechanism in TiN/HfO2/Pt cells,” "Appl. Phys. Lett |
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Sách, tạp chí |
| Tiêu đề: |
A study of copper oxide based resistive switching memory by conductive atom force microscope,” "Appl. Surf. "Sci |
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Sách, tạp chí |
| Tiêu đề: |
The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories,” "Phys. Chem. Chem. Phys. Phys. "Chem. Chem. Phys |
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Sách, tạp chí |
| Tiêu đề: |
Effect of annealing temperature on photoluminescence and resistive switching characteristics of ZnO/Al2O3 multilayer nanostructures,” "J. Alloys Compd |
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Sách, tạp chí |
| Tiêu đề: |
Memory programming of TiO2-x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching,” "Appl. Surf. Sci |
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Sách, tạp chí |
| Tiêu đề: |
An overview of materials issues in resistive random access memory,” "J. Mater |
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Sách, tạp chí |
| Tiêu đề: |
Al-doped ZnO as a switching layer for transparent bipolar resistive switching memory,” "Electron. "Mater. Lett |
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Sách, tạp chí |
| Tiêu đề: |
Flexible resistive switching memory devices composed of solution-processed GeO2:S films,” "Microelectron. Eng |
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Sách, tạp chí |
| Tiêu đề: |
High-density magnetoresistive random access memory operating at ultralow voltage at room temperature,” "Nat. Commun |
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Sách, tạp chí |
| Tiêu đề: |
Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review,” "J. Mater. Sci. Technol |
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Sách, tạp chí |
| Tiêu đề: |
Resistive Random Access Memory (RRAM) Based on Metal Oxides,” "Proc. IEEE |
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| [20] R. Waser, R. Dittmann, C. Staikov, and K. Szot, “Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges,” Adv. Mater., vol. 21, no. 25–26, pp. 2632–2663, 2009 |
Sách, tạp chí |
| Tiêu đề: |
Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges,” "Adv. Mater |
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