MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 11 pdf

... Modeling Hot-Carrier Effects For n-channel MOSFETs, I,, or (Ib/Id) is a well accepted monitor for hot- carrier induced degradation. However, for p-channel MOSFETs both 1, [45] and ... prediction method for hot-carrier-stressed p-MOS transistors’, IEEE IEDM-91, Tech. Dig., pp. 52 5-5 28 (1988). [45] W. Weber and F. Lau, ‘Hot-carrier drifts in submicrometer p-ch...

Ngày tải lên: 13/08/2014, 05:22

... available from the British Library. MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electronics and Technology Copyright 0 2007 by ... case permission to photocopy is not required from the publisher. ISBN-13 97 8-9 8 1-2 5 6-8 6 2-5 ISBN- 10 98 1 -2 5 6-8 62-X Disclaimer: This book was prepa...

Ngày tải lên: 13/08/2014, 05:22

... conditions is given by the Fermi-Dirac At 77K ni for silicon is -1 0-2 0cm-3, while at 400K its value is -1 O'*~m-~ 28 2 Basic Semiconductor and pn Junction Theory nonequilibrium condition ... - Vd); vd is positive for forward bias and negative for reuerse bias. If the applied forward voltage is exactly equal to the built-in voltage, there wi...

Ngày tải lên: 13/08/2014, 05:22

... + + pMOST - - - + terminal voltages as drain-source voltage Vds( = V, - VJ, gate-source voltage V,,( = V, - V,), and bulk-source voltage vb,( = vb - Vs). For normal DC ... 2 Basic Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2 = (1 - F,...

Ngày tải lên: 13/08/2014, 05:22

... 50 50 110 3 MOS Transistor Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. 3.3 1 Cross-section showing overlap capacitances between the source/drain and the gate ... order expression for Rsp, based on the assumption of uniform doping 128 4 MOS Capacitor I- -t > O O+ -0 .6 1 A1 (p-Si n+ Po~y(p-si) -o-8 -...

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... df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for p+ polysilicon gate) (tax ... polysilicon gate MOSFET, Proc. Intern. Symposium on VLSI Technology, System and Applications, pp. 17 0-1 73, March (1983). [I 11 B. E. Deal, ‘Standardiz...

Ngày tải lên: 13/08/2014, 05:22

... 0.0 u- 0.7 W Q !i 0.6 0 > 4 0.5 0 >" ;- I 5 0.4 lY I bO.3 195 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10'"cm-3 - - - - - W=20 ... both pMOST and nMOST devices, a general expression for the threshold voltage can be written as (5.63) where the + and - signs are for n- and p-channel...

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... model for drain-induced barrierlowering and drain-induced high electric field in a short-channel MOSFET , Solid-State pp. 11 8-1 27 (1989). Electron., 30, pp. 50 3-3 11 (1987). [78] Y. Omura and ... ED-36, pp. 111 0-1 115 (1989). [70] R. C. Vankemmel and K. M. De Meyer, ‘A study of the corner effects in trench-like isolated structures’, IEEE Trans. Electron Dev...

Ngày tải lên: 13/08/2014, 05:22

... form that at first glance appears different. 6.7 Short-Geometry Models 3 - 2- - a 9- W- (7 5 9 1.75 Q t- 6 !I 3 t- 6 fJY 0.5 293 I = 1.31 x 104V/cm a= 1.13 0 - ... needs 2- or 3-D analysis to account for short-channel and/ or narrow-width behavior. However, for circuit models we invariably modify the 1-D equations developed earli...

Ngày tải lên: 13/08/2014, 05:22

... G. Einspruch and G. Gildenblat, Eds.), VLSI Electronics Vol. 18, pp. 19 1-2 32, Academic Press Inc., New York, 1989. [109] [110 ] [111 ] [112 ] [113 ] [114 ] [115 ] [116 ] [117 ] [118 ] [119 ] [120] [121] [122] [123] [124] References ... 308 3 .O 6 MOSFET DC Model I I 1 I I I pMOST toX = 105 A W,/L, = 10l0.5 v,, = -4 v h c E 4 v U I 1 ....

Ngày tải lên: 13/08/2014, 05:22