MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 1 potx

... Zero Temperature Coefficient SID 12 I Overview 13 1 c 41 I 51 16 1 17 1 18 1 19 1 c1 01 11 21 c1 31 11 41 c1 51 c1 91 E. H. Snow, A. S. Grove, B. E. Deal, and C. T. Sah, ‘Ion transport ... integration’, ibid, ED- 31, pp. 15 5 5 -1 5 61 (19 84). 1. 1 Circuit Design and MOSFETs 3 1. 1 Circuit Design with MOSFETs For today’s circuit design, compute...

Ngày tải lên: 13/08/2014, 05:22

... Q,(y) for short-channel device becomes QdY) = - CoxCvgs - Vt, - av(~)l (6 .16 8) 266 6 MOSFET DC Model and (6 .11 1) in Eq. (6 .10 7), we get S=2.3Vr[ (1 +z)/{l (V/decade). (6 .11 2) ... =QV 1 5 10 .5 v) n - 5 1 0-6 3 0 1 0-7 z a 1 0-8 n > [r 1 0-9 1 0 -1 0 0.0 1 .o 2.0 3.0 4.0 5.0 GATE VOLTAGE Vgs (V) Fig....

Ngày tải lên: 13/08/2014, 05:22

... Einspruch and G. Gildenblat, Eds.), VLSI Electronics Vol. 18 , pp. 19 1- 2 32, Academic Press Inc., New York, 19 89. [10 9] [11 0] [11 1] [11 2] [11 3] [11 4] [11 5] [11 6] [11 7] [11 8] [11 9] [12 0] [12 1] [12 2] [12 3] [12 4] References ... 6 MOSFET DC Model I I 1 I I I pMOST toX = 10 5 A W,/L, = 10 l0.5 v,, = -4 v h c E 4 v U I...

Ngày tải lên: 13/08/2014, 05:22

... Optimizer 53 1 lo-' 1 0-2 1 0-3 9 lo4 I 0-5 1 0-6 1 lo-' 1 0-2 1 0-3 9 lo4 I 0-5 1 0-6 1 0-7 10 " 1. 0 1. 2 1. 4 1. 6 1. 8 2.0 2.2 2.4 2.6 2.8 11 Fig. 10 .7 DIBL parameter ... CO, 19 91. 13 61 W. N. Grant, ‘Electron and hole ionization rates in epitaxial silicon at high electric fields’, Solid-state Electron., V...

Ngày tải lên: 13/08/2014, 05:22

... E, for silicon can be modeled using the following polynomial equation [ 15 1 1. 20 6-2 .73 x lOP4T (2.2a) 1. 178 5-9 .025 x 1 0-5 T-3.05 x 10 p7T2 (2.2b) 1. 17+ 1. 059 x 10 p5T-6.05 x 1 0-7 T2 ... used for low-temperature device modeling work [ 16 ,17 1, the circuit simulator SPICE uses the following equation for E, [lS] (eV) (SPICE) 7.02 x 1...

Ngày tải lên: 13/08/2014, 05:22

... Electron. Devices, ED -1 8 , pp. 17 8 -1 95 (19 71) . [28] H. G. Poon and H. K. Gummel, Modeling of emitter capacitance’, Proc. IEEE (Lett.), 57, pp. 218 1- 2 18 2 (19 69) [29] B. A. Freese and G. L. Buller, ... Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2 = (1...

Ngày tải lên: 13/08/2014, 05:22

... PC 10 60 Rpmz Xj to, RS, 30 60 R Rco 18 78 R R," 17 52 R 0.35 y 0.25 50 50 11 0 3 MOS Transistor Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. ... ED-29, pp. 61 1- 618 (19 82). [20] E. Takeda, ‘Hot-carrier effects in submicrometer MOS VLSI , Proc. IEE, 13 1, Pt I, no. 5, pp. 15 3 -1 64 (19 84)...

Ngày tải lên: 13/08/2014, 05:22

... simulation of MOS capacitance’, IEEE Trans. Computer-Aided Design, CAD-2, pp. 11 1- 1 16 (19 83). 23 8-2 41 (19 88). 15 3 9- 15 44 (19 90). 26, pp. 36 1- 3 64 (19 83). ... (5 .14 ) Substrate Vfb df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysili...

Ngày tải lên: 13/08/2014, 05:22

... 0.0 u- 0.7 W Q !i 0.6 0 > 4 0.5 0 >" ;- I 5 0.4 lY I bO.3 19 5 1& apos ;1& apos ;1& apos ;1& apos ;1~ 1&apos ;1& apos ;1~ I - Nb = 2 X 10 '"cm-3 - - - - - W=20 ... BOUNDARY 1: oa b b+w (a) - - - 16 -3 A Nb =1. 71 x 10 cm x Nb = 1. 5 6 x 1Ol6c m3 N 4-2 5 x 1 0'6cm-3 0. 3...

Ngày tải lên: 13/08/2014, 05:22

... MOSFET , Solid-State pp. 11 8 -1 27 (19 89). Electron., 30, pp. 50 3-3 11 (19 87). [78] Y. Omura and K. Ohwada, ‘Threshold voltage theory for short-channel MOSFET model using a surface-potential ... ED-36, pp. 11 1 0 -1 11 5 (19 89). [70] R. C. Vankemmel and K. M. De Meyer, ‘A study of the corner effects in trench-like isolated structures’, IEEE Trans. Electron...

Ngày tải lên: 13/08/2014, 05:22