vlsi design course lecture notes uyemura textbook
vlsi design course lecture notes ch6
Ngày tải lên :
28/04/2014, 11:04
... model, assumes constant charge in channel similar analysis applies for pMOS, see textbook ECE 410, Prof A Mason Lecture Notes 6.15 Transconductance and Channel Resistance • nMOS Channel Charge: ... ECE 410, Prof A Mason similar analysis applies for pMOS, see textbook Rn = W (VGS − Vtn ) L Rp = W μ p Cox VSG − Vtp L μ nCox ( ) Lecture Notes 6.16 nMOS Current vs.Voltage • Cutoff Region General ... + - + + xp xn n-type ND donors/cm immobile donor ions (positive-charge) W ECE 410, Prof A Mason Lecture Notes 6.4 pn Junctions: Equilibrium Conditions electric field • Depletion Region depletion...
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vlsi design course lecture notes ch12
Ngày tải lên :
28/04/2014, 11:04
... XOR-based FA • HA-based FA • Other FA Circuits – a few others options are covered in the textbook ECE 410, Prof A Mason Lecture Notes 12.4 Full Adder Circuits • AOI Structure FA – implements following ... pi 1 0 1 gi 0 0 – carry-kill is not needed ECE 410, Prof A Mason Lecture Notes 12.19 Static CMOS Manchester Implementation • Textbook Circuit Implementation – ci+1 = if gi=0 – ci+1 = if gi=1 ... an n-sized adder ECE 410, Prof A Mason Lecture Notes 12.23 16b Adder Using 4b CLA Blocks • Create SUMs from outputs of this circuit ECE 410, Prof A Mason Lecture Notes 12.24 Other Adder Implementations...
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vlsi design course lecture notes ch13
Ngày tải lên :
28/04/2014, 11:04
... figure ECE 410, Prof A Mason Lecture Notes 13.26 ROM Array Layout • very “regular” layout • high packing density – one tx for each data point ECE 410, Prof A Mason Lecture Notes 13.27 Programmable ... connection location – turn tx on to make connection error in text • VLSI Implementation – replace AND-OR with NOR gates ECE 410, Prof A Mason Lecture Notes 13.33 Gate Arrays • Gate array chip contains ... slightly smaller than 6T cell • requires an extra high-resistance process layer ECE 410, Prof A Mason Lecture Notes 13.4 6T Cell Design • Critical Design Challenge – inverter sizing • to ensure good...
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design course vlsi lecture notes ch2
Ngày tải lên :
28/04/2014, 11:04
... Mason Lecture Notes Page 2.25 AOI/OAI nMOS Circuits • nMOS AOI structure X=a•b+c•d – series txs in parallel • nMOS OAI structure – series of parallel txs Y = a+e • b+f eX b X error in textbook ... b and b) converts from XOR to XNOR ECE 410, Prof A Mason Lecture Notes Page 2.32 XOR and XNOR AOI Schematic b a b a a note: errors in textbook figure –XOR: a ⊕ b = a • b + a • b –XNOR: a ⊕ b ... nMOS is on, pMOS is off Only one transistor is on for each digital voltage ECE 410, Prof A Mason Lecture Notes Page 2.4 MOSFET Pass Characteristics • Pass characteristics: passing of voltage from...
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design course vlsi lecture notes ch3-5
Ngày tải lên :
28/04/2014, 11:04
... Mason Lecture Notes Page 3.14 Part I: CMOS Technology CMOS Device Dimensions • Physical dimensions of a MOSFET – L = channel length – W = channel width • Side and Top views ECE 410, Prof A Mason Lecture ... photoresist oxide Si Wafer ECE 410, Prof A Mason Lecture Notes Page 3.49 CMOS Fabrication Sequence • view LOCOS slide show ECE 410, Prof A Mason Lecture Notes Page 3.50 Part IV: Complex Cell Layout ... silicon dioxide – background assumed to be silicon covered by silicon dioxide ECE 410, Prof A Mason Lecture Notes Page 3.4 Interconnect Parasitics Part I: CMOS Technology • Parasitic = unwanted natural...
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design course vlsi lecture notes ch7
Ngày tải lên :
28/04/2014, 11:04
... V • Logic Swing – Max swing of output signal • VL = VOH - VOL • VL = VDD ECE 410, Prof A Mason Lecture Notes 7.2 Inverter Voltage Transfer Characteristics • Gate Voltage, f(Vin) –VDSn=Vout, VSDp=VDD-Vout ... Vin > VDD - |Vtp| – Mn in Triode, Mp in Cutoff Vin > VIH input logic HIGH ECE 410, Prof A Mason Lecture Notes 7.3 Noise Margin • Input Low Voltage, VIL – Vin such that Vin < VIL = logic – point ... VOL = VDD - VIH = VIL – desire large VNMH and VNML for best noise immunity ECE 410, Prof A Mason Lecture Notes 7.4 Switching Threshold • Switching threshold = point on VTC where Vout = Vin – also...
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design course vlsi lecture notes ch11
Ngày tải lên :
28/04/2014, 11:04
... by input, D • or from internal feedback • Different structures used in VLSI ECE 410, Prof A Mason Lecture Notes 11.16 CMOS VLSI Clocked Latches • Clocked (enable) Latch using TGs – can use TGs ... is logic • Outputs can be constructed from the truth table – see textbook for illustrations of CMOS logic ECE 410, Prof A Mason Lecture Notes 11.14 Data Latches • Latch Function – store a data ... pMOS network buffer for output drive • see Figure 11.7 in textbook • Multi-bit MUXs – use parallel single-bit MUXs ECE 410, Prof A Mason Lecture Notes 11.8 Binary Decoders • Decoder Basic Function...
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VLSI DESIGN Thiết kế vi mạch số - Chapter 0: Course Introduction docx
Ngày tải lên :
10/03/2014, 08:20
... môn Kỹ Thuật Điện Tử Textbooks Neil Weste and David Harris, CMOS VLSI Design A Circuits and Systems Perspective, Addison Wesley, 2010 Tống Văn On, Thiết kế vi mạch CMOS VLSI - tập 1, NXB Phương ... 20% • Final exam: 80% • Assignment: bonus 5% - 10% Bộ môn Kỹ Thuật Điện Tử Schedule Week Lecture Week Lecture Chapter 10 Chapter Chapter 11 Chapter Chapter 12 Chapter 4 Chapter 13 Chapter 5 Chapter ... 17 Extra Midterm 18-19 Bộ môn Kỹ Thuật Điện Tử Final exam Course Preparation • Textbooks: – download the required textbooks • Software tools: – Matlab – LEdit – ModelSim • Programming knowledge:...
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CMOS VLSI Design - Lecture 1: Introduction ppt
Ngày tải lên :
19/03/2014, 10:20
... CMOS VLSI Design 4th Ed s 11 CMOS Inverter A 1 VDD Y A OFF ON Y ON OFF A Y GND 0: Introduction CMOS VLSI Design 4th Ed 12 CMOS NAND Gate A B Y 0 1 1 1 ON OFF ON OFF A B 0: Introduction 0 1 CMOS VLSI ... CMOS VLSI Design 4th Ed p-n Junctions A junction between p-type and n-type semiconductor forms a diode Current flows only in one direction p-type anode 0: Introduction n-type cathode CMOS VLSI ... 1 0: Introduction A B Y CMOS VLSI Design 4th Ed 14 3-input NAND Gate Y pulls low if ALL inputs are Y pulls high if ANY input is Y A B C 0: Introduction CMOS VLSI Design 4th Ed 15 CMOS Fabrication...
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CMOS VLSI Design - Lecture 2: Circuits & Layout docx
Ngày tải lên :
19/03/2014, 10:20
... 1000 gates LSI: [Moore65] 10,000 gates VLSI: > 10k gates Electronics Magazine 1: Circuits & Layout CMOS VLSI Design 4th Ed And Now… 1: Circuits & Layout CMOS VLSI Design 4th Ed 10 Feature Size ... 1: Circuits & Layout CMOS VLSI Design 4th Ed Annual Sales >1019 transistors manufactured in 2008 – billion for every human on the planet 1: Circuits & Layout CMOS VLSI Design 4th Ed Invention ... Circuits & Layout CMOS VLSI Design 4th Ed 11 Corollaries Many other factors grow exponentially – Ex: clock frequency, processor performance 1: Circuits & Layout CMOS VLSI Design 4th Ed 12 CMOS...
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CMOS VLSI Design - Lecture 3: CMOS Transistor Theory potx
Ngày tải lên :
19/03/2014, 10:20
... Saturation 3: CMOS Transistor Theory CMOS VLSI Design 4th Ed nMOS Cutoff No channel Ids ≈ Vgs = g + - + - s d n+ Vgd n+ p-type body b 3: CMOS Transistor Theory CMOS VLSI Design 4th Ed nMOS Linear ... Theory CMOS VLSI Design 4th Ed I-V Characteristics In Linear region, Ids depends on – How much charge is in the channel? – How fast is the charge moving? 3: CMOS Transistor Theory CMOS VLSI Design ... depletion region (b) Vg > Vt + - inversion region depletion region (c) 3: CMOS Transistor Theory CMOS VLSI Design 4th Ed Terminal Voltages Vg Mode of operation depends on Vg, Vd, Vs + + – Vgs = Vg...
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