Microelectronic circuits analysis and design muhammad h rashid 2nd edition

www.elsolucionario.org Microelectronic Circuits Analysis and Design Second Edition Muhammad H Rashid University of West Florida Australia • Brazil • Japan • Korea • Mexico • Singapore • Spain • United Kingdom • United States Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part Microelectronic Circuits: Analysis and Design, Second Edition Muhammad H Rashid Publisher, Global Engineering Program: Christopher M Shortt Acquisitions Editor: Swati Meherishi Senior Developmental Editor: Hilda Gowans © 2011, 1999 Cengage Learning ALL RIGHTS RESERVED No part of this work covered by the copyright herein may be reproduced, transmitted, stored, or used in any form or by any means graphic, electronic, or mechanical, including but not limited to photocopying, recording, scanning, digitizing, taping, Web distribution, information networks, or information storage and retrieval systems, except as permitted under Section 107 or 108 of the 1976 United States Copyright Act, without the prior written permission of the publisher Assistant Development Editor: Yumnam Ojen Singh For product information and technology assistance, contact us at Cengage Learning Customer & Sales Support, 1-800-354-9706 Editorial Assistant: Tanya Altieri For permission to use material from this text or product, submit all requests online at www.cengage.com/permissions Further permissions questions can be emailed to permissionrequest@cengage.com Team Assistant: Carly Rizzo Marketing Manager: Lauren Betsos Media Editor: Chris Valentine Production Manager: Jennifer Ziegler Project Manager: Deepti Narwat Agarwal Copyeditor: Betty Duncan Proofreader: Anne Matera Indexer: Kevin Broccoli Compositor: Glyph International Senior Art Director: Michelle Kunkler Cover Designer: idesign Cover Images: © Macs Peter/Shutterstock and Angelo Giampiccolo/Shutterstock Chapter Opener Image: © Stefan Glebowski/Shutterstock Permissions Account Manager, Text: Katie Huha Rights Acquisition Specialist: John Hill Manufacturing Buyer: Arethea Thomas Library of Congress Control Number: 2009943075 ISBN-13: 978-0-495-66772-8 ISBN-10: 0-495-66772-2 Cengage Learning 200 First Stamford Place, Suite 400 Stamford, CT 06902 USA Cengage Learning is a leading provider of customized learning solutions with office locations around the globe, including Singapore, the United Kingdom, Australia, Mexico, Brazil, and Japan Locate your local office at: www.cengage.com/region Cengage Learning products are represented in Canada by Nelson Education, Ltd For your course and learning solutions, visit www.cengage.com/engineering Purchase any of our products at your local college store or at our preferred online store www.CengageBrain.com Printed in Canada 14 13 12 11 10 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part To my parents, my wife, Fatema, my children, Faeza, Farzana, and Hasan Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part www.elsolucionario.org CONTENTS Preface xiii Teaching Plans and Suggested Course Outlines About the Author xix Chapter Introduction to Electronics and Design 1.1 Introduction 1.2 History of Electronics 1.3 Electronic Systems 1.4 Electronic Signals and Notation 1.5 Classifications of Electronic Systems 1.6 Specifications of Electronic Systems 1.7 Types of Amplifiers 15 1.8 Design of Electronic Systems 17 1.9 Design of Electronic Circuits 20 1.10 Electronic Devices 27 1.11 Emerging Electronics 32 References 36 Problems 37 Chapter xvii 10 12 Introduction to Amplifiers and Frequency Response 2.1 Introduction 40 2.2 Amplifier Characteristics 40 2.3 Amplifier Types 50 2.4 Cascaded Amplifiers 59 2.5 Frequency Response of Amplifiers 62 2.6 Miller’s Theorem 71 2.7 Frequency Response Methods 72 2.8 PSpice/SPICE Amplifier Models 87 2.9 Amplifier Design 88 Summary 91 References 92 Review Questions 92 Problems 93 Chapter Introduction to Operational Amplifiers and Applications 3.1 3.2 Introduction 104 Characteristics of Ideal Op-Amps 104 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part vi Contents 3.3 Op-Amp PSpice/SPICE Models 111 3.4 Analysis of Ideal Op-Amp Circuits 114 3.5 Op-Amp Applications 128 3.6 Op-Amp Circuit Design 164 Summary 165 References 166 Review Questions 166 Problems 167 Chapter Semiconductor Diodes 4.1 Introduction 180 4.2 Ideal Diodes 180 4.3 Transfer Characteristics of Diode Circuits 183 4.4 Practical Diodes 185 4.5 Analysis of Practical Diode Circuits 192 4.6 Modeling of Practical Diodes 196 4.7 Zener Diodes 208 4.8 Light-Emitting Diodes 220 4.9 Power Rating 220 4.10 Diode Data Sheets 222 Summary 226 References 226 Review Questions 226 Problems 227 Chapter Applications of Diodes 5.1 Introduction 238 5.2 Diode Rectifier 238 5.3 Output Filters for Rectifiers 260 5.4 Diode Peak Detectors and Demodulators 5.5 Diode Clippers 276 5.6 Diode Clamping Circuits 279 5.7 Diode Voltage Multipliers 284 5.8 Diode Function Generators 287 Summary 290 References 291 Review Questions 291 Problems 291 Chapter 272 Semiconductors and pn Junction Characteristics 6.1 6.2 Introduction 300 Semiconductor Materials 300 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part Contents 6.3 Zero-Biased pn Junction 307 6.4 Reverse-Biased pn Junction 314 6.5 Forward-Biased pn Junction 319 6.6 Junction Current Density 323 6.7 Temperature Dependence 325 6.8 High-Frequency AC Model 326 Summary 329 References 330 Review Questions 330 Problems 331 Chapter Metal Oxide Semiconductor Field-Effect Transistors 7.1 Introduction 336 7.2 Metal Oxide Field-Effect Transistors 336 7.3 Enhancement MOSFETs 337 7.4 Depletion MOSFETs 346 7.5 MOSFET Models and Amplifier 349 7.6 A MOSFET Switch 356 7.7 DC Biasing of MOSFETs 357 7.8 Common-Source (CS) Amplifiers 364 7.9 Common-Drain Amplifiers 375 7.10 Common-Gate Amplifiers 380 7.11 Multistage Amplifiers 383 7.12 DC Level Shifting and Amplifier 386 7.13 Frequency Response of MOSFET Amplifiers 7.14 Design of MOSFET Amplifiers 408 Summary 413 References 413 Review Questions 414 Problems 414 Chapter 393 Bipolar Junction Transistors and Amplifiers 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 8.10 8.11 Introduction 434 Bipolar Junction Transistors 434 Principles of BJT Operation 436 Input and Output Characteristics 447 BJT Circuit Models 449 The BJT Switch 455 DC Biasing of Bipolar Junction Transistors Common-Emitter Amplifiers 467 Emitter Followers 476 Common-Base Amplifiers 483 Multistage Amplifiers 488 457 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part vii viii Contents www.elsolucionario.org 8.12 The Darlington Pair Transistor 491 8.13 DC Level Shifting and Amplifier 495 8.14 Frequency Model and Response of Bipolar Junction Transistors 8.15 Frequency Response of BJT Amplifiers 508 8.16 MOSFETs versus BJTs 528 8.17 Design of Amplifiers 528 Summary 533 References 533 Review Questions 533 Problems 534 Chapter 501 Differential Amplifiers 9.1 Introduction 554 9.2 Internal Structure of Differential Amplifiers 554 9.3 MOSFET Current Sources 558 9.4 MOS Differential Amplifiers 566 9.5 Depletion MOS Differential Amplifiers 580 9.6 BJT Current Sources 586 9.7 BJT Differential Amplifiers 602 9.8 BiCMOS Differential Amplifiers 620 9.9 Frequency Response of Differential Amplifiers 626 9.10 Design of Differential Amplifiers 628 Summary 629 References 629 Review Questions 629 Problems 630 Chapter 10 Feedback Amplifiers 10.1 Introduction 642 10.2 Feedback 643 10.3 Characteristics of Feedback 644 10.4 Feedback Topologies 652 10.5 Analysis of Feedback Amplifiers 656 10.6 Series-Shunt Feedback 657 10.7 Series-Series Feedback 667 10.8 Shunt-Shunt Feedback 677 10.9 Shunt-Series Feedback 686 10.10 Feedback Circuit Design 692 10.11 Stability Analysis 698 10.12 Compensation Techniques 711 Summary 721 References 721 Review Questions 722 Problems 722 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part Contents Chapter 11 Power Amplifiers 11.1 Introduction 740 11.2 Classification of Power Amplifiers 740 11.3 Power Transistors 743 11.4 Class A Amplifiers 745 11.5 Class B Push-Pull Amplifiers 756 11.6 Complementary Class AB Push-Pull Amplifiers 11.7 Class C Amplifiers 777 11.8 Class D Amplifiers 781 11.9 Class E Amplifiers 784 11.10 Short-Circuit and Thermal Protection 786 11.11 Power Op-Amps 788 11.12 Thermal Considerations 792 11.13 Design of Power Amplifiers 796 Summary 797 References 797 Review Questions 797 Problems 798 Chapter 12 766 Active Filters 12.1 Introduction 804 12.2 Active versus Passive Filters 804 12.3 Types of Active Filters 805 12.4 First-Order Filters 808 12.5 The Biquadratic Function 810 12.6 Butterworth Filters 814 12.7 Transfer Function Realization 818 12.8 Low-Pass Filters 819 12.9 High-Pass Filters 829 12.10 Band-Pass Filters 837 12.11 Band-Reject Filters 843 12.12 All-Pass Filters 848 12.13 Switched-Capacitor Filters 849 12.14 Filter Design Guidelines 854 Summary 855 References 855 Review Questions 855 Problems 856 Chapter 13 Oscillators 13.1 13.2 13.3 Introduction 862 Principles of Oscillators 862 Audio-Frequency Oscillators 867 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part ix x Contents 13.4 Radio Frequency Oscillators 881 13.5 Crystal Oscillators 895 13.6 Active-Filter Tuned Oscillators 899 13.7 Design of Oscillators 902 Summary 903 References 903 Review Questions 903 Problems 903 Chapter 14 Operational Amplifiers 14.1 Introduction 910 14.2 Internal Structure of Op-Amps 910 14.3 Parameters and Characteristics of Practical Op-Amps 14.4 CMOS Op-Amps 933 14.5 BJT Op-Amps 940 14.6 Analysis of the LM741 Op-Amp 944 14.7 BiCMOS Op-Amps 962 14.8 Design of Op-Amps 974 Summary 975 References 976 Review Questions 976 Problems 977 Chapter 15 911 Introduction to Digital Electronics 15.1 Introduction 982 15.2 Logic States 982 15.3 Logic Gates 983 15.4 Performance Parameters of Logic Gates 985 15.5 NMOS Inverters 996 15.6 NMOS Logic Circuits 1014 15.7 CMOS Inverters 1016 15.8 CMOS Logic Circuits 1022 15.9 Comparison of CMOS and NMOS Gates 1026 15.10 BJT Inverters 1026 15.11 Transistor-Transistor Logic Gates 1033 15.12 Emitter-Coupled Logic OR/NOR Gates 1049 15.13 BiCMOS Inverters 1057 15.14 Interfacing of Logic Gates 1060 15.15 Comparison of Logic Gates 1063 15.16 Design of Logic Circuits 1064 Summary 1068 References 1068 Review Questions 1068 Problems 1069 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part www.elsolucionario.org model parameters for, 1205 MOSFETs v., 528 operation of, 436–447 PSpice model for, 503–504 saturation current in, 444–446 Bipolar transistors, 1203–1204 Biquadratic equation, 810–813 Bistable multivibrator, 1101, 1109 BJT See Bipolar junction transistor BJT amplifiers, 921 CMOS amplifier v., 620–621 design of, 528–532 feedback in, 656 frequency response of, 508–528 with level shifting, 497–501 thermal voltage drift in, 921 BJT current sources, 558–559, 586–602 basic, 586–588 cascode, 595–596 modified basic, 589–591 Widlar current source, 591–595 Wilson current source, 596–601 BJT differential amplifiers, 602–619 with basic current mirror active load, 613–615 cascode, 617–619 with modified current mirror, 615–617 pair with resistive load, 602–612 BJT inverters, 1026–1033 designing, 1030–1033 switching characteristics of, 1028–1029 voltage transfer characteristics of, 1027–1028 BJT op-amps, 940–944 LM124, 940–942 LM741, 942–944 BJT switch, 455–457 Bode plots, 707–710, 712, 807 Body effect of NMOS inverter with depletion load, 1008 of NMOS inverter with enhancement load, 1001 Bootstrapped amplifier circuit, 163 Bootstrapped voltage followers, AC-coupled, 162–163 BP filters See Band-pass filters Breakdown condition, 315–316 Breakdown region, of practical diodes, 187 Breakdown voltage, 208 Break frequency, 65, 67, 1245 Bridge amplifier, 791–792 Buffer stage, 116 Built-in junction potential, 308–310 Built-in potential, 307, 327, 503 Bulk resistance, 205 Butterworth filters, 814–818 Butterworth functions for high-order filters, 816–817 for nϭ1, 815 for nϭ2, 815–816 for nϭ3, 816 Butterworth high-pass filters, 834–836 Butterworth low-pass filters, 826–829 Butterworth response, 814 BW See Bandwidth CA3130 BiCMOS op-amp, 962 differential stage of, 963–964 gain stage of, 964 output stage of, 964 parameters of, 963 schematic for, 963 CA3140 BiCMOS op-amp output stage of, 965 parameters of, 965 schematic for, 964 Capacitance depletion, 326–327 diffusion, 327–328 junction, 317–318 Miller, 78 parasitic, 393 transition, 327 Capacitive-coupled amplifiers, 62–63 Capacitor-coupled cascaded amplifiers, 383–384, 488–489 Capacitors, 1202, 1279 Capture mode, 1139 Capture program, 1180 Capture range, 1140 Carrier concentrations, 305–307 Carriers, 301 Cascaded amplifiers, 59–62 Cascaded current amplifiers, 60–62 Cascaded voltage amplifiers, 59–60 Cascode BiCMOS amplifiers, 622–625 Cascode current source, 563–564, 595–596 Cascoded amplifiers, 489–491 BiCMOS, 622–625 DC biasing of, 384–386, 489 differential, 617–619 Index Double-cascode BiCMOS, 623–625 Cascode differential amplifier, 617–619 Cascoded MOS differential amplifier, 578–580 CB amplifier See Common-base amplifiers C-B junction capacitance, 503 C-B resistance, 451 CCCS See Current-controlled current source CCVS See Current-controlled voltage source Center frequency, 68, 1139 C filters, 264–269 Channel length modulation, 343–345 Channel modulation length, 352 Channel modulation voltage, 352 Characteristic equation, 699 Charging mode, of VCO, 1120 Circuit design, using analog integrated circuits, 1169 Circuit implementation, of VCO, 1121–123 Circuit-level design process, 21–24 Circuits historical levels of integration, with op-amps and diodes, 1081–1097 pulse response of, 12 Clamp diodes, 1101 Clamping circuits, 279–284 fixed-shift clampers, 280–281 precision, 1085–1086 variable-shift clampers, 281–282 Class A amplifiers, 745–755 basic common-emitter, 749–752 common-emitter amplifiers with active load, 752–753 emitter followers, 745–749 transformer-coupled load common-emitter, 753–755 Class AB push-pull amplifiers, 766–777 biasing with diodes, 767–768 biasing with diodes and active current source, 769–770 biasing with VBE multiplier circuit, 772–774 output power/efficiency of, 767 quasi-complementary, 775–776 transfer characteristic of, 767, 770 transformer-coupled, 776–777 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part I3 I4 Index Class B push-pull amplifiers, 756–766 complementary, 756–761 DC biasing of, 764 transformer-coupled load, 761–765 Class C amplifiers, 777–780 Class D amplifiers, 781–783 Class E amplifiers, 784–786 Clippers, 276–279 Clock-tunable resistor, 850 Closed-loop gain, 644–651 frequency of, 698–699 low-frequency, 648 poles of, 699, 700–702 sensitivity of, 646–647 stability of, 698–702 CMOS See Complementary metal oxide semiconductor CMOS amplifiers, 921–922 BJT amplifier v., 620–621 designing, 576–578 differential, 575–578 thermal voltage drift in, 921–922 CMOS driving TTL, 1062–1063 CMOS families, 1025 CMOS inverters, 1016–1022 CMOS logic circuits, 1022–1026 NMOS gates v., 1026 NOR/NAND gates, 1024–1025 transmission gates, 1022–1024 TTL driven by, 1062–1063 TTL driving, 1060–1062 CMOS NAND gates, 1024–1025 CMOS NOR gates, 1024–1025 CMOS op-amps, 933–940 basic, 933 MC14573, 937 TLC1078, 937–940 CMOS technology, 576 CMOS transmission gates, 1022–1023, 1026 CMRR See Common-mode rejection ratio Collector saturation current, 445 Collector terminal, 28 Color television, Colpitts oscillators, 881–888 Common-base amplifiers (CB amplifier), 483–487 frequency response of, 518–522 Common-collector BJT amplifiers, 514–518 Common-drain amplifiers, 375–380 active-biased source follower, 376–378 frequency response of, 401–403 resistive-biased source follower, 378–380 Common-emitter amplifiers with active load, 752–753 basic, 749–752 transformer-coupled load, 753–755 Common-emitter BJT amplifiers, 467–476 frequency response of, 508–514 Common-gate amplifiers, 380–383 frequency response of, 403–408 Common ground, 40 Common-mode rejection ratio (CMRR), 108–111, 556, 606, 609–610, 925 of differential amplifier, 144–145 of instrumentation amplifier, 146–147 of inverting amplifiers, 122–123 of noninverting amplifiers, 116–117 in op-amps, 925 Common-source amplifiers (CS amplifier), 364–375 with current source load, 364–367 with depletion MOSFET load, 369 with enhancement load, 368–369 frequency response of, 396–401 with resistive load, 370–374 Comparators, 1097–1100 op-amps v., 1098 output-side connection, 1098 threshold, 1098–1100 transfer characteristics of, 1097 Compensation techniques, 711–720 adding dominant pole, 711–712 changing dominant pole, 713–714 Miller compensation/pole splitting, 715–716 modifying feedback path, 717–720 Complementary metal oxide semiconductor (CMOS), 346 Complementary push-pull amplifiers, 756–761 dead-zone minimization for, 759 output power/efficiency of, 757–758 Constant current sources, 159 Constant-drop DC model, 196–197 Conversion speed, 1169 Converters AC-DC, 238 analog-to-digital, 7–8, 1165–1169 digital-to-analog, 8, 1158–1164 frequency-to-voltage, 1151–1155 IC A/D, 1167–1169 IC D/A, 1162 MC1408 D/A, 1163 negative impedance, 158 NE/SE-5018 D/A, 1163–1164 R-2R ladder network D/A, 1160–1162 successive-approximation A/D, 1165–1167 TelCom 9400 series, 1147, 1150, 1154, 1155 voltage-current, 155–156 voltage-to-frequency, 1120, 1147–1151, 1155 weighted-resistor D/A, 1159–1160 Corner frequency, 65, 67, 1245 Coupling capacitors, 62, 467, 479 Crossover distortion, 756–757, 762, 766 Crystal oscillators, 895–899 CS amplifier See Common-source amplifiers Current amplifiers, 16, 53–54, 87 Current boosters, 788 Current-controlled current source (CCCS), 53–54, 87 Current-controlled voltage source (CCVS), 88 Current gain, 42, 53 Current mirror source, 388–390, 497–498 Current-sensing/current-comparing feedback, 653–655 See also Shunt-series feedback Current-sensing/voltage comparing feedback, 653 See also Series-series feedback Current sink, 559 Current sinking source, 458 Current source biasing with active, 458–459 BJT, 586–602 level shifting with, 387–388, 497 Current switch, 1122 Cut-in voltage, 186 Cutoff frequency, 65, 67, 806, 1250 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part Index Cutoff region of depletion MOSFETs, 349 of enhancement MOSFETs, 338 D/A converters See Digital-toanalog converters Damping factor, 1255 Damping ratio, 1255 Darlington emitter follower, 965 Darlington pair transistor, 491–495, 615, 925–926 DC amplifier, 16 DC analysis of LM741 BJT op-amp, 944–951 of LM741 op-amp, 944–945 DC and small-signal specifications, 14–15 DC biasing of BiCMOS op-amp LF411, 970 of BJTs, 457–467 of cascoded amplifier, 384–386, 489 of class B amplifier, 764 of CMOS op-amp MC14573, 935 of CMOS op-amp TLC1078, 939 of MOSFET, 357–364 DC-coupled amplifiers, 62–63 DC filters, 260 DC level shifting, 386–388, 495–501 DC linear model, 111–112 DC millivoltmeters, 157 DC sweep analysis, 1191 DC transfer characteristics, of BJT differential amplifier, 603–605 DC voltmeters, 156 Deadband, 1103, 1107, 1109 Dead zones, 756, 759, 766 Decade, 1245 Decade increase, 65 Degenerative feedback, 642 See also Negative feedback Delay equalizer, 848 Delay-power product (DP), 995 Delay time, 12, 1028 Demodulators, 272–275 Depletion capacitance, 326–327 Depletion load, of NMOS inverter, 1005 Depletion MOS differential amplifiers, 580–585 Depletion MOS differential pair with active load, 585 Depletion MOS differential pair with resistive load, 581–585 Depletion MOSFETs, 30–31, 352, 369 operation, 346–348 output/transfer characteristics of, 348–349 Depletion ratio, 315 Depletion region, 307, 315 Depletion region width, 316–317, 320 Design constraints, 22 Design criteria, 22 Design perspective, 25 Design problems large design projects, 1282–1283 medium design projects, 1282 mini-design projects, 1282 Design projects, 25–26 Design report, 26–27 Design statement, 22 Detectors diode peak, 272–275 edge-triggered phase, 1140–1141 missing-pulse, 1129–1130 most positive signal, 1081 phase, 1140–1141 photo, 154–155 precision peak voltage, 1081–1082 zero-crossing, 1100–1101 Differential amplifiers, 143–145 cascoded MOS, 578–580 characteristics of, 554–556 CMOS, 575–578 depletion MOS, 580–585 design of, 628 frequency response of, 626–628 internal structure of, 554–558 MOS, 566–580 Differential-mode half circuit, 606 Differential stage of BiCMOS op-amp CA3130, 963–964 of BiCMOS op-amp LH0022, 965–967 of BiCMOS op-amp LH0062, 971 of BJT op-amps LM124, 940 of CMOS op-amp MC14573, 935 of CMOS op-amp TLC1078, 938 Differentiating, 201 Differentiators, 137–143 Differentiator time constant, 138 Diffusion capacitance, 327–328 Digital electronics, 10–11, 982 Digital filters, 804 Digital integrated circuits, 984–985 Digital logic circuits, 982 Digital-to-analog (D/A) converters, 8, 1158–1164 IC, 1162–1164 R-2R ladder network, 1160–1162 weighted-resistor, 1159–1160 Diode(s), 1203 See also Lightemitting diodes; Organic light-emitting diodes; Practical diodes; Superdiode biasing with, 767–771 breakdown region of practical, 187 circuits with op-amps and, 1081–1097 clippers, 276–279 determination of constants, 187–189 forward biased, 180 forward-biased region of practical, 186 ideal, 180–183 model parameters for, 1204 op-amp circuits with, 1081–1097 operation point of, 193 power rating, 220–222 PSpice/SPICE model, 205–207 as rectifiers, 238–260 reverse biased, 180 reverse-biased region of practical, 186–187 semiconductor, 27, 180 Shockley, equation, 185 simple circuit, 192 small-signal, transconductance, 200 solid-state point-contact, zener, 208–219, 224–225 Diode applications clamping circuits, 279–284 clippers, 276–279 diode rectifier, 238–260 function generators, 287–290 output filters for rectifiers, 260–272 peak detectors and demodulators, 272–275 voltage multipliers, 284–287 Diode circuits simple, 192 transfer characteristics of, 183–184 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part I5 I6 Index Diode clamping circuits, 279–284 Diode clippers, 276–279 parallel clippers, 276–277 series clippers, 277–278 Diode data sheets, 222–225 Diode function generators, 287–290 Diode peak detectors and demodulators, 272–275 Diode rectifier, 238–260 single-phase full-wave bridge rectifiers, 254–260 single-phase full-wave centertapped rectifiers, 247–254 single-phase half-wave rectifiers, 238–247 Diode-transistor logic (DTL), 1026 Diode voltage multipliers, 284–287 Direct-coupled amplifiers, 16, 62–63, 384, 489 Discharging mode, of VCO, 1121 Distortion, 13, 40, 649–651, 804 crossover, 756–757 measurement of, 740 total harmonic, 740 Dominant pole adding, 711–712 changing, 713–714 Donor impurity, 302 Doping, 301 Double-cascode BiCMOS amplifiers, 623–625 DP See Delay-power product Drain terminal, 29 Drop decay rate, 1156 DTL See Diode-transistor logic Dynamic power, 993–994 Dynamic resistance, 200 Early effect, 441 Early voltage, 442, 451 Ebers-Moll model of bipolar junction transistors, 1267–1274 for npn transistor, 1268 transport version model, 1270 ECL See Emitter-coupled logic Edge-triggered phase detector, 1140–1141 Effective density states function in the conduction band, 306 in the valence band, 306 Electrical Engineering Design Compendium, 25 Electric field distribution, 310–311 Electron-hole generation and recombination, 303–304 www.elsolucionario.org Electronic circuits design, 20–27 analysis v design, 20 circuit-level design process, 21–22 design report, 26–27 engineering design defined, 20 large design projects, 26 medium design projects, 26 mini design projects, 26 perspective for study benefits, 25 project types, 25 short design projects, 25 Electronic devices, 27–31 bipolar junction transistors, 28 field-effect transistors, 29 semiconductor diodes, 27 Electronic signals and notation, 6–7 analog-to-digital converters, 7–8 digital-to-analog converters, notation, 8–10 Electronic systems, 4–5 actuators, 5–6 classifications of, 10–11 DC and small-signal specifications, 14–15 design of, 17–19 history of, 2–4 introduction, sensors, specifications of systems, 12–15 transient specifications, 12 Electrons, 301 Electron systems distortion, 13 frequency specifications, 13–14 Emerging electronics, 32–33 bioelectronics, 34–35 memristor, 32–33 organic electronics, 33–34 Emission coefficient, 185 Emitter-coupled logic (ECL), 1027, 1162 OR/NOR gates, 1049–1057 Emitter-coupled pair, 1049 Emitter-follower biasing, 461 Emitter followers, 476–483, 745–749 active-biased, 476–479 biasing with, 461 class A amplifiers and, 745–749 Darlington, 965 level shifting with, 496 resistive-biased, 479–483 Emitter resistance-feedback biasing, 460–461 Emitter scaling, 445 Emitter terminal, 28 Encoders, absolute position, Engineering design, 20–21 Enhancement load, 996–997 Enhancement MOSFETs, 29–30, 337–338, 352, 368–369 channel length modulation, 343–344 operation of, 338–341 output/transfer characteristics of, 342 substrate biasing effects, 345–346 Equilibrium electrostatic potential, 1001 Error gain, 1163 linearity, 1163 nonlinearity, 1163 offset, 1163 quantizing, 1169 signal, 642 voltage, 1139 Excluded region, 982 Extrinsic, 301 Fabrication process constant, 1001 Fairchild Semiconductor, Falloff rate, 807 Fall time, 12, 991, 1029 Fan-in, 988–989 Fan-out, 988–989 Feedback in BJT amplifiers, 656 characteristics of, 644–651 compensation techniques for, 711–720 configurations of, 652–655 frequency response of, 648–649 modifying path of, 717–720 in MOSFET amplifiers, 656 negative, 642, 648, 649–650 in op-amps, 656 oscillators and, 699, 863 positive, 642, 645, 768 series-series, 652, 653, 656–657, 667–676 series-shunt, 643, 652, 653, 656–667, 692–693 shunt-series, 652, 653–655, 656–657, 686–691, 694–697 shunt-shunt, 644, 652, 653, 654, 656–657, 677–686 thermal runaway and, 768 topologies of, 652–655, 721 types of, 642, 721 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part Index Feedback amplifier analysis of, 656–657 stability analysis of, 698–710 Feedback circuit design, 692–698 Feedback current signal, 643 Feedback factor, 644, 646–647, 698 Feedback impedance, 71 Feedback ratio, 644 voltage-, 1262 Feedback relationships, 655 Feedback signal, 642, 643 Fermi function, 304–305 FETs See Field-effect transistors Field-effect device, Field-effect transistors (FETs), 29, 106, 336 See also Metal oxide semiconductor fieldeffect transistors Figure of merit, 866 Filtering circuit, 805 Filters See also Active filters; High-pass filters; Low-pass filters all-pass, 848–849 analog, 804 band-elimination, 843 band-stop, 807, 843 BP, 807, 837–843 Butterworth, 814–818 Butterworth functions for high-order, 816–817 Butterworth high-pass, 834–836 Butterworth low-pass, 826–829 C, 264–269 DC, 260 design guidelines, 854 digital, 804 first-order, 808–810 first-order high-pass, 829–831 first-order low-pass, 819–822 ideal characteristics of, 806 L, 261–263 LC, 269–272, 781 low-pass, 819–829 MF5 universal monolithic switched-capacitor, 852 multiple feedback, 840 narrow-band-pass, 840–843 narrow-band-reject, 846–848 notch, 844, 846 output, 260–272 passive, 804–805 realistic characteristics of, 807 second-order, 813 second-order Butterworth, 852–853 second-order high-pass, 831–833 second-order low-pass, 822–826 switched-capacitor, 849–854 universal, 851 universal switched-capacitor, 851–852 wide-band-pass, 837–840 wide-band-reject, 844–846 First-order filters, 808–810 First-order high-pass CR circuits, 1246–1249 First-order high-pass filters, 829–831 First-order low-pass filters, 819–822 First-order low-pass RC circuits, 1244–1246 555 timer, 1126 astable multivibrators in, 1131–1134 functional block diagram of, 1126–1127 monostable multivibrators, 1127–1128 Fixed-shift clampers, 280–281 Fixed-voltage limiters, 1086 FM See Frequency modulation Forward base transit time, 502 Forward biased diode, 180 Forward-biased model, 328 Forward-biased pn junction, 319–323 depletion region width, 320–321 minority carrier charge distribution, 321–323 Forward-biased region, of practical diodes, 186 Forward-current amplification factor, 449 Forward current gain, of transistor, 28 Forward diffusion current, 308 Free-running frequency, 1139 Free-running mode, 1139 Free-running multivibrator, 1110, 1113, 1131 Frequency amplifiers, 16 Frequency divider, 1129 Frequency modulation (FM), 2, 1120 Frequency multiplier, 1143–1144 Frequency ratio, 1249 Frequency response, 927–930 with active load, 627–628 of amplifiers, 62–71 of BJT amplifiers, 508–528 of BJTs, 501–508 of differential amplifiers, 626–628 of feedback, 648–649 of first- and second-order circuits, 1243–1244 of LM741 op-amp, 958–961 of MOSFET amplifiers, 393–408 of op-amp differentiators, 141–143 of op-amp integrators, 134–137 of practical op-amps, 927–930 with resistive load, 626–627 Frequency-response analysis, 961, 1198–1199 Frequency response methods, 72–73 high-frequency transfer function method, 75–77 high-frequency zero-value method, 82–84 low-frequency short-circuit method, 80–82 low-frequency transfer function method, 73–75 midband voltage gain, 84 Miller’s capacitor method, 77–78 multistage amplifiers, 86 Frequency response sweep analysis, 1191 Frequency scaling, 854 Frequency-shift keying (FSK) modulator, 1137–1139, 1145 Frequency specifications, 13–14 Frequency stability, 866 Frequency-to-voltage (F/V) converters, 1151–1155 FSK demodulator, 1145 FSK modulator See Frequencyshift keying modulator Full-wave voltage doubler circuit, 286 Functional amplifiers, 16 Functional block diagram, 1126–1127 Function generators, 287–290 F/V converters See Frequency-tovoltage converters Gain active filters and, 804 bandwidth relation and, 69–71 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part I7 I8 Index Gain-bandwidth product (GBW), 648–649, 692, 712, 721 Gain crossover frequency, 705 Gain margin, 704–705 Gain parameter, 40 Gain sensitivity, 646 loop, 645 Gain stage of BiCMOS op-amp CA3130, 964 of BiCMOS op-amp LH0022, 967 of BiCMOS op-amp LH0062, 972 of BJT op-amps LM124, 941 of CMOS op-amp MC14573, 935 of CMOS op-amp TLC1078, 938 of LM741 op-amp, 948–949 of small-signal AC analysis, 957–958 Gate terminal, 29 GBW See Gain-bandwidth product General Electric Company, Graphical method, of analysis, 192–193 Half-power frequency, 65, 67 Half-wave rectifier, single phase, 238–247 Half-wave voltage doubler circuit, 285 Hard limiters, 1094–1097 Harmonics, 260 Hartley oscillators, 888–891 Heat flow, 793–794 Heat sinks, 793–794 High cutoff frequencies of common-base BJT amplifiers, 520–521 of common-collector BJT amplifiers, 516–517 of common-drain amplifiers, 402 of common-emitter BJT amplifiers, 510–511 of common-gate amplifiers, 404–405 of common-source amplifiers, 398–399 High-frequency AC model, 326–329 depletion capacitance, 326–327 diffusion capacitance, 327–328 forward-biased model, 328 reverse-biased model, 329 High-frequency BJT model, 501–503 High-frequency MOSFET models, 393–395 High-frequency transfer function method, 75–77 High-frequency zero-value method, 82–84 High noise margin, 987 High-pass characteristic amplifier, 66–68 High-pass circuit, 1248 High-pass (HP) filters, 806, 829–837 Butterworth, 834–836 first-order, 829–831 second-order, 831–833 High-pass gain, 1248 High-speed TTL NAND gates, 1042–1047 Hole, 301 HP filters See High-pass filters Hybrids, 33 Hysteresis, 1103, 1109 output voltage and, 1107–1108 Integrated circuits (IC), 2, 336 A/D converters, 1167–1169 D/A converters, 1162 digital, 984–985 PLL, 1141–1146 SAH, 1157–1158 Integration time constant, 129 Integrators, 128–137 practical inverting, 130 switched-capacitor, 851 Intel, Interstage coupling amplifiers, 16 Intrinsic Fermi energy, 306 Intrinsic material, 300 Inverse-active mode, 1036 Inverter, 983 Inverting amplifiers, 121–128 Inverting Schmitt trigger, 1102–1105 Inverting summing amplifiers, 148–149 Inverting threshold comparator, 1099, 1100 Iterative method, of analysis, 193–194 IC See Integrated circuits IC operational amplifier, IC power amplifiers, 789–792 Ideal diodes, 27–28, 180–183 Ideality factor, 185 Ideal series-series feedback network, 669–670 Ideal series-shunt feedback network, 658–660 Ideal shunt-series feedback network, 688 Ideal shunt-shunt feedback network, 678–680 Impedance amplifier, 16 Impurities, 301 Inductance simulators, 161–162 Inductors, 1202–1203 Injection version, of Ebers-Moll model, 1268–1269 Input biasing current, 912–914 Input offset current, 914–917 Input offset voltage, 919, 920 Input resistance, 43, 925–926, 1262 Input signal, 1168 Input stage of LM741 op-amp, 946–948 of small-signal AC analysis, 952–957 Instrumentation amplifiers, 145–147 JFETs See Junction field-effect transistors Junction capacitance, 317–318 Junction current density, 323–325 Junction field-effect transistors (JFETs), 29, 31, 1204, 1205 Junction potential distribution, 311–312 KCL See Kirchhoff’s current law Kirchhoff’s current law (KCL), 458, 1214–1216 Kirchhoff’s voltage law (KVL), 349, 1216–1219 KVL See Kirchhoff’s voltage law Large design projects, 26, 1282–1283 Large-signal characteristics, 15 Large-signal voltage gain, 15 LC-coupled amplifier, 16 LC filter, 781 LC filters, 269–272, 781 LEDs See Light-emitting diodes Level-shifted DC amplifier, 497–501 Level-shifted MOS amplifier, 388–392 Level shifter, 279 Level shifting, 386–388, 495–501 methods for, 387–388, 496–497 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part www.elsolucionario.org LF411 BiCMOS op-amp DC biasing of, 970 parameters of, 971 schematic for, 969, 970 thermal protection in, 971 L filters, 261–263 LH0022 BiCMOS op-amp biasing circuitry in, 967 differential stage of, 965–967 gain stage of, 967 output stage of, 967 parameters of, 966 protection circuitry in, 967 schematic for, 966, 968 LH0032 BiCMOS op-amp parameters of, 974 schematic for, 973 LH0062 BiCMOS op-amp differential stage of, 971 gain stage of, 972 parameters of, 973 schematic for, 972 Library files, 1208–1211 Light-emitting diodes (LEDs), 220 Limiter, unsymmetrical, 215 Limiters adjustable-voltage, 1086–1089 fixed-voltage, 1086 hard, 1094–1096 zener voltage, 1093–1094 Linear amplifier, 16, 40 Linear DC models, 450 Linearity error, 1163 Linear ohmic region, 339–340 Line regulation, 209 LM124 BJT op-amp differential stage of, 940 gain stage of, 941 output stage of, 942 parameters of, 941 schematic of, 941 LM741 BJT op-amp analysis, 944–962 biasing circuit in, 945–946 DC analysis of, 944–951 differential stage of, 942 frequency-response analysis of, 961 gain stage of, 944, 948–949, 957–958 input stage of, 946–948, 952–957 output stage of, 944, 958–961 overload protection in, 951 protection circuitry in, 944 schematic of, 943 small-signal AC analysis of, 951–961 small-signal equivalent circuit analysis of, 961–962 Load active, 613 amplifiers, 16 amplifier transformer-coupled, common-emitter, 753–755 amplifier transformer-coupled, push-pull, 761–765 BJT differential amplifiers with basic current mirror active, 613–615 BJT differential pair with resistive, 602–612 body effect of NMOS inverter with depletion, 1008 body effect of NMOS inverter with enhancement, 1001 common-emitter amplifiers transformer-coupled, 753–755 common-emitter amplifiers with active, 752–753 CS amplifier with current source, 364–367 CS amplifier with depletion MOSFET, 369 CS amplifier with enhancement, 368–369 CS amplifier with resistive, 370–374 Depletion, 1005 depletion MOS differential pair with active, 585 depletion MOS differential pair with resistive, 581–585 enhancement, 996–997 line, 192 push-pull amplifiers transformer-coupled, 761–765 regulation, 209 resistive, 370–373 transformer-coupled, 761–765 transformer-coupled, commonemitter amplifiers, 753–755 Lock range, 1140 Logarithmic gain, 42–43 Logic noise margin, 988 Logic noise margin, 987 Logic circuits, design of, 1064–1067 Logic gates, 982, 983–985 CMOS v NMOS, 1026 comparison of, 1063–1064 delay-power product, 995 fan-in/fan-out in, 988–989 Index interfacing of, 1060–1063 noise margins in, 987–988 performance parameters of, 985–995 power dissipation of, 992–995 propagation delay, 991–992 voltage transfer characteristic of, 986–987 Logic states, 982 Loop gain, 645, 698 low-frequency, 648 phase margin and, 705–707 Loop transmission, 645 Low cutoff frequencies of common-base BJT amplifiers, 518–520 of common-collector BJT amplifiers, 515–516 of common-drain amplifiers, 401 of common-emitter BJT amplifiers, 508–510 of common-gate amplifiers, 403–404 of common-source amplifiers, 397–398 Lower threshold voltage, 1103 Low-frequency hybrid BJT model, 1262–1265 Low-frequency loop gain, 648 Low-frequency short-circuit method, 80–82 Low-frequency small-signal model, 199–205 Low-frequency transfer function method, 73–75 Low noise margin, 988 Low-pass characteristic amplifier, 63–66 Low-pass circuit, 1245 Low-pass (LP) filters, 806, 819–829 Butterworth, 826–829 first-order, 819–822 second-order, 822–826 Low-pass gain, 1246 LP See Low-pass filters Majority carriers, 303–304 Mark frequencies, 1137 Mark states, 1137 Mathematical method, of analysis, 194–196 Maximally flat response, 814 Maximum power transfer theorem, 1227–1228 MC1408 D/A converter, 1163 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part I9 I10 Index MC14573 CMOS op-amp analyzing, 935–937 DC biasing for, 935 parameters of, 934 schematic for, 934 stages of, 935 Medical telesensors, 35 Medium design projects, 26, 1282 MESFETs See Metal-Schottky barrier FETs Metal oxide semiconductor field-effect transistors (MOSFET), 29, 336–337, 984, 1162, 1204, 1206 See also Depletion MOSFETs; Enhancement MOSFETs; nchannel depletion MOSFET; p-channel enhancement MOSFET BJTs v., 528 DC biasing of, 357–364 depletion, 346–349, 352, 369 enhancement, 337–346, 352, 368–369 high-frequency models of, 393–395 model parameters for, 1206 models of, 349–356 small-signal analysis models of, 351–352, 395–396 Metal-Schottky barrier FETs (MESFETs), 984 MF5 universal monolithic switched-capacitor filter, 852 Microbial fuel cells, 35 Microcantilevers, 35 Microchip implants, 35 Midband voltage gain, 84–86 Miller capacitance, 78 Miller compensation, 715–716 Miller’s capacitor method, 77–80 Miller’s effect, 77–78, 503, 928 Miller’s theorem, 71–72 Mimristor, 32–33 Mini design projects, 26, 1282 Minority carrier charge distribution, 321–323 Minority carrier life, 323 Minority carrier lifetime, 446 Minority carriers, 303–304 Missing-pulse detector, 1129–1130 Model, AC linear, 112–113 Models AC linear, 112–113 BJT circuit, 449–455 BJT circuits, 449–455 constant-drop DC, 196–197 DC linear, 111–112 Ebers-Moll, 1267–1274 forward-biased, 328 high-frequency AC, 326–329 high-frequency BJT, 501–503 high-frequency MOSFET, 393–395 linear DC, 450 low-frequency hybrid BJT, 1262–1265 low-frequency small-signal, 199–205 MOSFET, 349–356 nonlinear macro, 113–114 op-amp circuit, 105–107 piecewise linear, of zener diodes, 215 piecewise linear DC, 197–199 practical diodes, 196–207 PSpice devices and elements for, 1200–1206 PSpice/SPICE amplifier, 87–88 PSpice/SPICE diode, 205–207 PSpice/SPICE operation amplifier, 111–114 reverse-biased, 329 small-signal AC, 450–452 small-signal hybrid, 452 Model statement, of PSpice/ SPICE, 205 Modem, 1137 Modification of feedback path, 717–720 Modified basic MOSFET current source, 561 Modulation index, 781 Monostable multivibrators applications of, 1129–1130 in 555 timer, 1127–1128 MOS differential amplifiers, 566–580 MOSFET See Metal oxide semiconductor field-effect transistors MOSFET amplifier, 353–356 design of, 408–413 feedback in, 656 frequency response of, 393–408 MOSFET biasing circuit, 357–364 MOSFET current sources, 558–566 MOSFET models, 349–353 MOSFET switch, 356–357 MOS oscillators, two-stage, 891–894 Most positive signal detectors, 1081 Multiemitter bipolar transistor, 1034 Multiple feedback filter, 840 Multistage amplifiers, 86, 383–386, 488–491, 522–528 NAND, 983, 984 Nanobiotechnology, 35 Nanofabrication, 35 Nanomedicine, 35 Nanotechnology, 34 Narrowbanding, 712 Narrow-band-pass filters, 840–843 Narrow-band-reject filters, 846–848 National Semiconductor, 789 Natural frequency, 1249 n-channel depletion MOSFET, 346 n-channel enhancement MOSFET (NMOS), 337–340, 342–343, 346, 349–350, 353, 781, 996 NE5034, 1167–1168 Negative feedback, 642, 649–650 Negative impedance converters, 158 Negative logic, 982 Negative threshold voltage, 1103 Negative voltage limiter, 1086 adjustable, 1087, 1089 NE/SE-565 PLL applications of, 1143–1146 center frequency of, 1141 diagrams of, 1142 as frequency multiplier, 1143–1144 as FSK demodulator, 1145 as SCA background music decoder, 1145–1146 NE/SE-566 VCO, 1123–1124, 1126 NE/SE-5018 D/A converter, 1163–1164 Netlists, 1206–1208 NMOS See n-channel enhancement MOSFET; n-channel enhancement MOSFET NMOS differential pair, 566–575 NMOS inverters, 996–1014 comparison of, 1013–1014 with depletion load, 1005–1013 with enhancement load, 996–1005 NMOS logic circuits, 1014–1016 CMOS gates v., 1026 NAND gates, 1016 NOR gates, 1015 transmission gates, 1014–1015 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part Index NMOS NAND gates, 1016 NMOS NOR gates, 1015 NMOS transition gates, 1014, 1026 Noise, 11 Noise immunity, 987 Noise margins, 987–988 Noninverting, integrators, 159–160 Noninverting amplifiers, 114–121 CMRR of, 116–117 Noninverting integrators, 159–160 Noninverting Schmitt triggers, 1105–1106 Noninverting summing amplifiers, 147–148 Noninverting threshold comparator, 1099 Nonlinearity error, 1163 Nonlinear macromodel, 113–114 Nonlinear ohmic region, 340–341 NOR, 983, 984 Normalized frequency, 1249 Norton’s theorem, 1226–1227 Notation, 8–10 Notch filter, 844, 846 Notch-out frequency, 847 NOT gate, 983 npn transistor, 28, 434–436, 442, 444, 448, 533, 756, 761, 775–776, 1268 n-type materials, 301–302 Nyquist plot, 703–704 Nyquist stability criterion, 703–704 Octave increase, 65 Offset error, 1163 Offset-minimizing resistance, 913 Offset voltage adjustment, 922–925 Off time, 12 Ohmic region of depletion MOSFETs, 349 of enhancement MOSFETs, 339–341 linear, 339–340 nonlinear, 340–341 Ohm’s law, 339 OLEDs See Organic light-emitting diodes One-shot pulse-generating circuit, 1127 On time, 12 Op-amp See Operational amplifiers Op-amp applications, 128–163 AC-coupled bootstrapped voltage followers, 162–163 addition-subtraction amplifiers, 149–153 constant current sources, 159 DC millivoltmeters, 157 DC voltmeters, 156 differential amplifiers, 143–145 differentiators, 137–143 inductance simulators, 161 instrumentation amplifiers, 145–147 integrators, 128–137 inverting summing amplifiers, 148–149 negative impedance converters, 158 noninverting integrators, 159–160 noninverting summing amplifiers, 147–148 optocoupler drivers, 153–154 photodetectors, 154–155 voltage-current converters, 155–156 Op-amp circuits, 1081–1097 design, 164–165 SAH, 1157 Op-amp ideal circuits analysis, 114–128 inverting amplifiers, 120–127 noninverting amplifiers, 114–120 Op-amp PSpice/SPICE models, 111–114 AC linear model, 112–113 DC linear model, 111–112 nonlinear macromodel, 113–114 Open-circuit reverse voltage ratio, 1262 Open-circuit saturation currents, 1270 Open-circuit transimpendance, 57 Open-circuit voltage gain, 51, 351 Open-loop gain, 645, 646, 648, 656, 698 Open-loop transfer function, 649 Operational amplifiers (op-amps), 16, 656, 1098 BiCMOS, 962–974 characteristics of, 104–110 circuit design, 164–165 circuit model, 105–107 common-mode rejection ratio, 108–111, 925 comparators v., 1098 design of, 974–975 feedback in, 642, 643 frequency response, 107–108, 927–930 input biasing current for, 912–914 input offset current for, 914–917 input offset voltage for, 917–918 input resistance, 925–926 internal structure of, 910–911 offset voltage adjustment, 922–925 op-amp circuit model, 105–107 op-amp frequency response, 107–108 output resistance, 927 parameters/characteristics of practical, 911–932 power, 788–791 power supply rejection ratio, 918–919 SAH circuits with, 1157 slew rate of, 930–932 thermal voltage drift, 919–922 Operation point, of diode, 193 Optical isolators, 153 Optocoupler drivers, 153–154 OR, 983, 984 OrCad adding text in, 1187–1188 analysis type selection, 1191–1193 beginning new project with, 1182–1183 circuit analysis process, 1181 creating netlists, 1206–1208 drawing circuit, 1182–1191 frequency response analysis, 1198–1199 getting/placing components in, 1183–1185 introduction, 1178 labeling components in, 1187–1188 library files, 1208–1211 menu commands for, 1190 modeling devices and elements, 1200–1206 overview, 1180–1181 PSpice simulation in, 1193 rotating components in, 1185–1186 saving circuit file in, 1190–1191 schematic copying and capturing, 1195–1196 setting attributes in, 1188–1190 simulation results display, 1194–1195 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part I11 I12 Index OrCAD (continued) software installation, 1178–1180 varying parameters, 1196–1198 viewing schematic in, 1190 wiring components in, 1187 Organic electronics, 33–34 Organic light-emitting diodes (OLEDs), 33 Organic thin-film transistors (OTFTs), 33 Oscillations, conditions for, 863 Oscillators, 699 active-filter tuned, 899–901 AF, 867–881 amplitude stability of, 866 classification of, 863 Colpitts, 881–888 crystal, 895–899 design of, 902 feedback and, 699, 863 frequency stability of, 866 Hartley, 888–891 phase-shift, 867–870 principles of, 862–866 quadrature, 871–872 radio frequency, 881–895 ring, 878–880 three-phase, 873–874 two-stage MOS, 891–894 voltage-controlled, 1120–1126 Wien-bridge, 874–877 OTFTs See Organic thin-film transistors Output admittance, 1262 Output characteristics of depletion MOSFETs, 348–349 of enhancement MOSFETs, 342 Output decay rate, 1156 Output filters, for rectifiers, 260–272 C filters, 263–269 LC filters, 263–269 L filters, 261–263 Output offset voltage, 917 Output power AC, 240–241, 250 DC, 241, 250 /efficiency of class AB pushpull amplifiers, 767 /efficiency of complementary push-pull amplifiers, 757–758 /efficiency of transformercoupled load push-pull amplifiers, 762–764 www.elsolucionario.org Output resistance, 43, 927 Output-side connection, 1098 Output stage of BiCMOS op-amp CA3130, 964 of BiCMOS op-amp CA3140, 965 of BiCMOS op-amp LH0022, 967 of BJT op-amps LM124, 942 of CMOS op-amp TLC1078, 938 of LM741 op-amp, 949–951 of small-signal AC analysis, 958–961 Output voltage, hysteresis effects of, 1107–1108 Overdrive factor, 1028 Overlap capacitance, 393 Overload protection, of LM741 op-amp, 951 Parallel clippers, 276–277 Parallel resonant RLC circuits, 1240–1242 Parasitic capacitance, 393 Parasitic resistance, 205 Passband, 806 Pass-band gain, 84 Passive components capacitors, 1279 potentiometers, 1278 resistors, 1276–1278 Passive filters, active filters v., 804–805 p-channel enhancement MOSFET (PMOS), 337–338, 560, 781 Peak detectors and demodulators, 272–275 Piezoelectric crystal, 895, 896 Performance requirements, 22 Phase corrector, 848 Phase crossover frequency, 709–710 Phase detector, 1140–1141 Phase-lock loops (PLL), 1139–1146 565 IC PLL, 1141–1146 IC, 1141–1143 phase detector in, 1140–1141 Phase-lock mode, 1139 Phase margin, 704–707, 709–710 Phase-shift oscillators, 867–870 Photodetectors, 154–155 Piecewise linear DC model, 197–199 Piecewise linear model of zener diodes, 215 Pinch-down voltage, 347 Plastic electronics, 33 PLL See Phase-lock loops PMOS See p-channel enhancement MOSFET pn junction, 436, 439 forward-biased, 319–323 reverse-biased, 314–318 zero-biased, 307–314 pn junction diodes, 300 pnpn triggering transistor, pnp transistor, 28 pnp transistors, 434–436, 442, 448, 468, 533, 756, 775–776 Pole quality factor, 810 Pole splitting, 715–716 Positive feedback, 642, 645, 768 Positive feedback effects, 1103 Positive logic, 982 Positive threshold voltage, 1103 Positive voltage limiter, 1086, 1087 Potential divider level shifting, 387, 496 Potentiometers, 1278 Power amplifiers, 16, 53 classification of, 740–743 design of, 796 IC, 789–792 short-circuit/thermal protection for, 786–788 thermal considerations for, 792–796 Power dissipation, 794–796, 992–995 dynamic power, 993–994 static power, 993 Power electronics, 2, 10–11 Power gain, 42 Power op-amp LH0021, 789–790 Power op-amp LM380, 790–791 Power op-amps, 788–791 bridge amplifier, 791–792 IC power amplifiers, 789–791 Power rating, 220–222 Power supply rejection ratio (PSRR), 918–919 Power supply sensitivity (PSS), 919 Power transistors, 743–745, 792 heat flow in, 793–794 thermal considerations for, 792–796 thermal resistance in, 793 Practical diodes, 185–192 breakdown region, 187 characteristics of, 185–187 diode constants determination, 187–189 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part Index forward-biased region, 186 reverse-biased region, 186–187 temperature effects, 189–192 voltage-versus-current characteristic of, 185 Practical diodes circuits, 192–196 approximate method, 193 graphical method, 192–193 iterative method, 193–194 mathematical method, 194–196 Practical diodes modeling, 196–207 constant-drop DC model, 196–197 low-frequency small-signal model, 199–202 piecewise linear DC model, 197–199 PSpice/SPICE diode model, 205–207 Practical inverting integrator, 130 Practical op-amps common-mode rejection ratio, 925 frequency response, 927–930 input biasing current, 912–914 input offset current, 914–917 input offset voltage, 917–918 input resistance, 925–926 offset voltage adjustment, 922–925 output resistance, 927 parameters/characteristics of, 911–932 power supply rejection ratio, 918–919 slew rate of, 930–932 thermal voltage drift, 919–922 Practical series-series feedback network, 670–671 Practical series-shunt feedback network, 661 Practical shunt-series feedback network, 688–689 Practical shunt-shunt feedback network, 680 Precision clamping circuits, 1085–1086 Precision full-wave rectifiers, 1084 Precision half-wave rectifiers, 1082–1083 Precision peak voltage detectors, 1081–1082 Probe program, 1180, 1194 Propagation delay, 991–992 of BiCMOS, 1058–1059 CMOS transmission gates, 1023–1024 Protection circuitry of BiCMOS op-amp LH0022, 967 of LM741 op-amp, 944 PSpice BJTs in, 452–453, 503–504 commands for, 1209 modeling devices and elements in, 1200–1206 MOSFETs in, 353, 395–396 OrCAD and, 1193 varying parameters for, 1196–1198 PSpice A/D, 1180 PSpice/SPICE amplifier models, 87–88 current amplifier, 87 operation, 111–114 transconductance amplifier, 88 transimpedance amplifier, 88 voltage amplifier, 87 PSpice/SPICE diode model, 205–207 model statement, 205–206 tabular representation, 206 PSRR See Power supply rejection ratio PSS See Power supply sensitivity p-type materials, 302–303 Pull-up resistance, 984 Pulse response of series CR circuits, 1234–1237 of series RC circuits, 1231–1234 Pulse stretcher, 1130 Pulse widener, 1130 Pulse-width modulation (PWM), 742, 781 Push-pull amplifiers See also Class AB push-pull amplifiers; Class B push-pull amplifiers complementary, 756–761 DC biasing of, 764 transformer-coupled load, 761–765 PWM See Pulse-width modulation Q-point, 46, 193, 336, 434, 450, 529–530 Quadrature oscillators, 871–872 Quality factor, 837, 866, 895 Quantizing error, 1169 Quasi-complementary class AB amplifiers, 775–776 Quiescent diode current, 193 Quiescent diode voltage, 193 Quiescent point, of diode, 193 Quiescent power, 993 R-2R ladder network D/A converter, 1160–1162 Radar, Radio circuits, Radio frequency (RF) amplifiers, 16 Radio frequency identification (RFID) tags, 34 Radio frequency oscillators, 881–895 Colpitts, 881–888 Hartley, 888–891 Ramp generator, 1135–1137 RC-coupled amplifier, 16 Rectifiers diodes as, 238–260 output filters for, 260–272 precision full-wave, 1084 precision half-wave, 1082–1083 single-phase full-wave bridge, 254–260 single-phase half-wave, 238–247 Recycling, of design process, 18 Reference voltage, 208, 1097 Schmitt triggers with, 1106–1107 Regenerative feedback, 642 See also Positive feedback Relative stability, 704–705 Resistance AC, 200 bulk, 205 C-B, 451 dynamic, 200 input, 43, 925–926, 1262 offset-minimizing, 913 output, 43, 927 parasitic, 205 pull-up, 984 short-circuit input, 1262 small-signal, 200 thermal, 793 zener, 209 Resistive-biased common-emitter amplifier, 471–475 Resistive-biased emitter follower, 479–483 Resistive-biased source follower, 378–380 Resistive load, 370–373 Resistors, 1201, 1276–1278 Resistor-transistor logic (RTL), 1026 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part I13 I14 Index Resolution, 1163 Resonant circuits, 1238–1239 Resonant frequency, 1255 Reverse-biased diode, 180 Reverse-biased model, 329 Reverse-biased pn junction, 314–318 breakdown condition, 315–316 depletion region width, 316–317 junction capacitance, 317–318 Reverse-biased region, of practical diodes, 186–187 Reverse drift current, 308 Reverse saturation current, 324 RF amplifiers See Radio frequency amplifiers RFID tags See Radio frequency identification tags Ring oscillators, 878–880 Ripple elimination, 1153 Rise time, 12, 46–47, 48, 991, 1028 RLC circuit, 1181 Roll-off rate, 807 Root locus, 701 RTL See Resistor-transistor logic SAH See Sample-and-hold circuits Sallen-Key circuit, 822, 829, 831 modified, 824 Sample-and-hold circuits (SAH), 1155–1158 integrated circuits, 1157–1158 op-amp circuits, 1157 Sampling time, SAR See Successive-approximation register Saturating charge, 1029 Saturation current, 444–447 Saturation-logic families, 1027 Saturation region, 347 of depletion MOSFETs, 347, 349 of enhancement MOSFETs, 341 Sawtooth-wave generators, 1117–1119 SCA See Subsidiary carrier authorization decoder Scaling amplifier, 148 Scaling summer circuit, 149 Schmitt triggers, 1101–1109 hysteresis and, 1107–1109 inverting, 1102–1105 noninverting, 1105–1106 with reference voltage, 1106–1107 Schottky TTL NAND gates, 1047–1049 SCR See Silicon-controlled rectifier Second-order Butterworth filter, 852–853 Second-order filters, 813 Second-order high-pass filters, 831–833 Second-order low-pass filters, 822–826 Second-order parallel RLC circuits, 1254–1258 Second-order series RLC circuits, 1249–1254 See Basic circuits first-order law-pass RC circuits, 1244–1246 frequency response of first- and second-order circuits, 1243–1244 Semiconductor, 33 Semiconductor diodes, 27, 180 diode data sheets, 222–225 ideal diodes, 180–183 light-emitting diodes, 220 power rating, 220–222 practical diodes, 184–192 transfer characteristics of diode circuits, 183–184 zener diodes, 208–219 Semiconductor materials, 300–307 carrier concentrations, 305–307 Fermi function, 304–305 forward-biased pn junction, 319–323 high-frequency AC model, 326–329 junction current density, 323–325 majority and minority carriers, 303–304 n-type, 301–302 p-type, 302–303 reverse-biased pn junction, 314–318 temperature dependence, 325–326 zero-biased pn junction, 307–314 Sensors, Series clippers, 277–278 Series resonant circuits, 1239–1240 Series-series feedback, 652, 653, 656–657, 667–668 analysis of, 669–676 ideal, 669–670 practical, 670–671 Series-shunt feedback, 643, 652, 653, 656–657 analysis of, 658–667 designing circuit for, 692–693 ideal, 658–660 practical, 661 Servo amplifier, 16 Settling time, 1156, 1163 Shockley diode equation, 185 Short-circuit current gain, 53 Short-circuit forward-transfer current ratio, 1262 Short-circuit input resistance, 1262 Short-circuit method, 80 low-frequency, 80–82 Short-circuit protection, 786–787 Short-circuit saturation currents, 1270 Short design projects, 25 Shunt regulator, 209 Shunt-series feedback, 652, 653–655, 656–657, 686–688 analysis of, 688–691 designing circuit for, 694–697 ideal, 688 practical, 688–689 Shunt-shunt feedback, 644, 652, 653, 654, 656–657, 677 analysis of, 678–686 ideal, 678–680 practical, 680 Signal amplification types, 15–16 Signal waveforms, 746, 761–762 Signetics Corporation, 1126 Silicon-controlled rectifier (SCR), Silicon transistor, Simple diode circuit, 192 Simulated resistor, 850 Single-base resistor biasing, 459–460 Single-phase bridge rectifier, with L filter, 261 Single-phase full-wave bridge rectifier, 254–260 Single-phase full-wave centertapped rectifier, 247–254 Single-phase half-wave rectifiers, 238–247 Slew rate (SR), 48–49, 930–932 Small common-mode signal, 607–609 Small differential signal, 606–607, 614–615 Small-signal AC models, 450–452 Small-signal analysis of BJT circuits, 453–455 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part www.elsolucionario.org of BJT differential amplifier, 606–612, 614–615 of LM741 op-amp, 951–961 of MOSFET amplifiers, 353–355 MOSFET models for, 351–352, 395–396 Small-signal common-mode rejection ratio (CMRR), 609–610 Small-signal current gain, 1262 Small-signal diode transconductance, 200 Small-signal equivalent circuit, 961–962 Small-signal hybrid models, 452 Small-signal resistance, 200 Small-signal specifications, 14–15 Small-signal voltage gain, 15, 47, 390–391, 500–501 Soft limiter, 1089 Solid-state point-contact diode, Source follower, 375 active-biased, 376–378 resistive-biased, 378–380 Source terminal, 29 Sourcing current source, 458 Space charge density and electric field, 310 Space charge depletion width, 312–313 Space charge region, 307, 315 Space frequencies, 1137 Space states, 1137 SPICE See PSpice Square-wave generators, 1110–1113, 1134–1135 Squaring circuit, 1101 SR See Slew rate Stability, 1163 Stability analysis, 698–710 with Bode plots, 707–709 closed-loop frequency/stability, 698–699 closed-loop poles in, 700–701 Nyquist criterion in, 703–704 phase margin effects, 705–707 poles and instability, 699 relative stability, 704 transient response in, 699–700 Standard TTL gates, 1034–1038 Static characteristics of NMOS inverter with depletion load, 1005–1008 of NMOS inverter with enhancement load, 997–1000 Static power, 993 Step response of series CR circuits, 1230–1231 of series RC circuits, 1229–1230 of series RL circuits, 1237–1238 Stop band, 806 Storage time, 1029 Storecast music See Subsidiary carrier authorization (SCA) decoder Subsidiary carrier authorization (SCA) decoder, 1145–1146 Substrate biasing effects, 345–346 Successive-approximation A/D converter, 1165–1167 Successive-approximation register (SAR), 1165 Summing amplifier, 148 Superdiode, 1080–1081 Super heterodyne receiver, Superposition theorem, 1219–1221 Supply voltage rejection ratio (SVRR), 919 SVRR See Supply voltage rejection ratio Sweep analysis AC, 1191 DC, 1191 frequency response, 1191 Switched-capacitor filters, 849–854 switched-capacitor integrators, 851 switched-capacitor resistors, 850–851 universal, 851–853 Switched-capacitor integrators, 851 Switched-capacitor resistors, 850–851 Switching characteristics, 1028–1029 Switching voltage, 1106 Symmetrical zener limiter, 216 System-level design, 17–18 Tabular representation, 206 Taylor series expansion, 201–202 TelCom 9400 series converter, 1147, 1150, 1154, 1155 Temperature dependence, 325–326 Texas Instruments, THD See Total harmonic distortion Thermal-biasing current drift, 919 Index Thermal considerations heat sinks/heat flow, 793–794 in power amplifiers, 792–796 power dissipation v temperature, 794–795 thermal resistance, 793 Thermal drift, 919 Thermal input offset current drift, 919 Thermal protection, 786–788 of BiCMOS op-amp LF411, 971 Thermal resistance, 793 Thermal runaway, 768 Thermal voltage, 186 Thermal voltage drift, 919–922 Thevenin’s theorem, 1221–1226 3-dB frequency, 65, 67, 1245 Three-phase oscillators, 873–874 Threshold comparators, 1098–1100 Threshold voltage, 186, 339, 1001 Thyristor, Time on, 12 acquisition, 1156 aperture, 1156 base transit, 501 delay, 12, 1028 differentiator, constant, 138 fall, 12, 991, 1029 forward base transit, 502 integration, constant, 129 off, 12 rise, 12, 48, 991, 1028 sampling, settling, 1156, 1163 storage, 1029 Time constants, of first-order circuits, 1258–1260 TLC1078 CMOS op-amp analyzing, 939–940 DC biasing of, 939 parameters of, 937 schematic for, 938 stages of, 938 Total harmonic distortion (THD), 13, 740 Totem-pole output stage, 1034 Trace variables, 1194 Transconductance, 352 Transconductance amplifiers, 15, 55–56, 88 Transducers, Transfer characteristics of BJT differential amplifier, 603–605 of class AB amplifiers, 767, 770 of depletion MOSFETs, 348–349 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part I15 I16 Index Transfer characteristics (continued) of diode circuits, 183–184 of emitter followers, 746 of enhancement MOSFETs, 342 with negative feedback, 650–651 of Schmitt trigger, 1103, 1106 Transfer function realization, 818–819 Transformer-coupled amplifier, 16 Transformer-coupled class AB amplifiers, 776–777 Transformer-coupled load common-emitter amplifiers, 753–755 Transformer-coupled load push-pull amplifiers, 761–765 DC biasing for, 764 output power/efficiency of, 762–764 signal waveforms of, 761–762 Transient analysis, 1191 Transient response, of first-order circuits, 1228–1238 pulse response of series CR circuits, 1233–1237 pulse response of series RC circuits, 1231–1233 step response of series CR circuits, 1230–1231 step response of series RC circuits, 1229–1230 step response of series RL circuits, 1237–1238 Transient response, stability analysis and, 699–700 Transient specifications, 12–13 Transimpedance amplifiers, 57–58, 88 Transistors, See also Bipolar junction transistor; Diodetransistor logic; Junction field-effect transistors; Resistor-transistor logic BJT, 434–455, 457–467, 501–508, 528, 533 Darlington pair, 491–495 depletion metal oxide semiconductor field-effect, 30–31 field-effect, 29, 106, 336 forward current gain of, 28 MOSFET, 336–337, 357–364, 528, 1162 multiemitter bipolar, 1034 npn, 28, 434–436, 442, 444, 448, 533, 756, 761, 775–776,1268 organic thin-film, 33 pnp, 28, 434–436, 442, 448, 468, 533, 756, 775–776 pnpn triggering, power, 743–745, 792 silicon, unipolar field-effect, Transistor saturation current, 1269 Transistor-transistor logic (TTL) gates, 1026, 1033–1034 CMOS driven by, 1060–1062 CMOS driving, 1062–1063 high-speed, 1042–1047 Schottky, 1047–1049 standard, 1034–1042 Transition capacitance, 327 Transition frequency, 505 Transition region, 982, 986 Transition voltage, 604 Triangular-wave generators, 1113–1117 Triode vacuum tube, Truth table, 984 TTL See Transistor-transistor logic TTL driving CMOS, 1060–1062 TTL NAND gate, 1034–1039 Tuned amplifier, 16, 68 Tuned oscillators, active-filter, 899–901 Tunneling effect, 315 Turn-on voltage, 186 Turns ratio, 241 Twin-T network, 846 Two-base resistor biasing, 461–462 Two-stage MOS oscillators, 891–894 UHF amplifier See Ultra-highfrequency amplifier Ultra-high-frequency (UHF) amplifier, 16 Undefined region, 982 Unipolar field-effect transistor, Unity-gain bandwidth, 68, 108, 505, 927–929, 931 Unity-gain inverter, 123 Universal filter, 851–853 Universal switched-capacitor filters, 851–852 Unsymmetrical limiter, 215 Upper threshold voltage, 1103 VA See Video amplifier Vacuum tubes, Varactors, 327 Variable-shift clampers, 281–282 Varicaps, 327 VBE multiplier circuit, 772–774 VCBS See Voltage-controlled voltage source VCCS See Voltage-controlled current source VCO See Voltage-controlled oscillator Very-large-scale integrated circuits (VLSI), 336 V/F converter See Voltage-tofrequency converters Video amplifier (VA), 16 VLSI See Very-large-scale integrated circuits Voltage AC-coupled bootstrapped, followers, 162–163 adjustable-, limiters, 1086–1092 adjustable negative, limiter, 1087, 1089 adjusting offset, 922–925 amplifiers, 15, 51–52, 87 biasing, 436 breakdown, 208 cascaded, amplifiers, 59–60 channel modulation, 352 current-controlled, source, 88 cut-in, 186 diode, multipliers, 284–287 Early, 442, 451 error, 1139 fixed-, limiters, 1086 frequency-to-, converters, 1151–1155 full-wave, doubler circuit, 286 half-wave, doubler circuit, 285 large-signal, gain, 15 lower threshold, 1103 midband, gain, 84–86 negative, limiter, 1086 negative threshold, 1103 offset, adjustment, 922–925 open-circuit, gain, 51 open-circuit reverse, ratio, 1262 output, 1107–1108 output offset, 917 pinch-down, 347 positive, limiter, 1086, 1087 positive threshold, 1103 precision peak, detectors, 1081–1082 quiescent diode, 193 reference, 208, 1097 Schmitt triggers with reference, 1106–1107 small-signal, gain, 15, 47 switching, 1106 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part Index thermal, 186 thermal, drift, 919–922 threshold, 186, 339, 1001 transition, 604 turn-on, 186 upper threshold, 1103 zener, 208 zener, limiter, 1093–1094 Voltage-controlled current source (VCCS), 88, 1122–1123 Voltage-controlled oscillator (VCO), 1120–1126 charging mode of, 1120 circuit implementation of, 1121–1122 discharging mode of, 1121 NE/SE-566, 1123–1125 Voltage-controlled voltage source (VCVS), 51–52, 87 Voltage-current converters, 155–156 Voltage doublers, 284–286 Voltage-feedback ratio, 1262 Voltage follower, 116 Voltage gain, 41–42, 47 Voltage multipliers, 284–287 voltage doublers, 284–286 voltage triplers and quadruplers, 286–287 Voltage reference diode, 20 Voltage regulator, 209 Voltage-sensing/current-comparing feedback, 644 See also Shunt-shunt feedback Voltage-sensing/voltage-comparing feedback, 653 See also Series-shunt feedback Voltage-to-frequency (V/F) converters, 1120, 1147–1151, 1155 Voltage transfer characteristic (VTC), 986–987, 1027 Voltage transfer function, 805 Voltage triplers and quadruplers, 286–287 VTC See Voltage transfer characteristic Weighted-resistor D/A converter, 1159–1160 Weighted summer circuit, 149 Wideband amplifier, 16 Wide-band-pass filters, 837–840 Wide-band-reject filters, 844–846 Widlar current source, 591–595 Wien-bridge oscillators, 874–877 Wilson current source, 564–565, 596–601 Zener breakdown, 315 Zener diodes, 208–219, 787 data sheet for, 224–225 temperature effects of, 218–219 zener limiters, 214–218 zener regulator, 209–211 Zener effect, 315 Zener hard limiter, 1094, 1096 Zener level shifting, 388, 497 Zener limiters, 214–218 Zener regulator, 209–211 design of, 211–214 Zener resistance, 209 Zener voltage, 208 Zener voltage limiter, 1093–1094 Zero-biased pn junction, 307–314 built-in junction potential, 308–310 electric field distribution, 310–311 junction potential distribution, 311–312 space charge depletion width, 312–314 Zero-crossing detectors, 1100–1101 Zero quality factor, 810 Zero-value method, high-frequency, 82–84 Copyright 2011 Cengage Learning, Inc All Rights Reserved May not be copied, scanned, or duplicated, in whole or in part I17 ... Frequency-to-Voltage Converters 1147 16.13 Sample -and- Hold Circuits 1155 16.14 Digital-to-Analog Converters 1158 16.15 Analog-to-Digital Converters 1165 16.16 Circuit Design Using Analog Integrated Circuits. .. www.elsolucionario.org Microelectronic Circuits: Analysis and Design 1.9 Design of Electronic Circuits A circuit-level design is implemented and expressed in terms of components, devices, and voltage–current... Op-Amps 910 14.3 Parameters and Characteristics of Practical Op-Amps 14.4 CMOS Op-Amps 933 14.5 BJT Op-Amps 940 14.6 Analysis of the LM741 Op-Amp 944 14.7 BiCMOS Op-Amps 962 14.8 Design of Op-Amps