Tài liệu Circuits & Electronics P22 pdf

15 222 0
Tài liệu Circuits & Electronics P22 pdf

Đang tải... (xem toàn văn)

Tài liệu hạn chế xem trước, để xem đầy đủ mời bạn chọn Tải xuống

Thông tin tài liệu

6.002 Fall 2000 Lecture 1 22 6.002 CIRCUITS AND ELECTRONICS Energy and Power 6.002 Fall 2000 Lecture 2 22 Why worry about energy? small batteries Æ good Today:  How long will the battery last? in standby mode in active use  Will the chip overheat and self-destruct? - 6.002 Fall 2000 Lecture 3 22 Look at energy dissipation in MOSFET gates Let us determine standby power active use power Let’s work out a few related examples first. C: wiring capacitance and C GS of following gate V S C R O v + – I v + – 6.002 Fall 2000 Lecture 4 22 Example 1: Power Energy dissipated in time T R V VIP 2 == VITE = + – R I V + – V 6.002 Fall 2000 Lecture 5 22 Example 1: for our gate ONL S RR V P + = 2 0=P O v S V ON R L R I v high S V ON R L R O v I v low 6.002 Fall 2000 Lecture 6 22 Example 2: Consider Find energy dissipated in each cycle. Find average power . P S V + – 1 R C 2 R 1 S 2 S openS closedS 2 1 t closedS open S 2 1 1 T 2 T T 6.002 Fall 2000 Lecture 7 22 T 1 : S 1 closed, S 2 open t C v S V CR t 1 S 1 e R V − t i 1 S R V + – C v + – 1 R C S V i assume v C = 0 at t = 0 6.002 Fall 2000 Lecture 8 22 Total energy provided by source during T 1 dtiVE 1 T 0 S ∫ = dte R V CR t T 0 1 2 S 1 1 − ∫ = 1 1 T 0 CR t 1 1 2 S eCR R V − −=         −= − CR T 2 S 1 1 e1VC 1 2 S1 2 S RindissipatedVC 2 1 E ,ConstoredVC 2 1 = CRTifVC 11 2 S >>≈ I.e., if we wait long enough Independent of R! 6.002 Fall 2000 Lecture 9 22 T 2 : S 2 closed, S 1 open + – C v 2 R C So, initially, 2 S CV 2 1 = energy stored in capacitor Assume T 2 >> R 2 C So, capacitor discharges ~fully in T 2 So, energy dissipated in R 2 during T 2 2 S2 CV 2 1 E = E 1 , E 2 independent of R 2 ! Initially, v C = V S (recall T 1 >> R 1 C ) 6.002 Fall 2000 Lecture 10 22 Putting the two together: Energy dissipated in each cycle 2 S 2 S CV 2 1 CV 2 1 += 21 EEE += C gdischargin & charging indissipatedenergyCVE 2 S = Assumes C charges and discharges fully. frequency T f 1 = T E P = T CV S 2 = fCV S 2 = Average power [...]... t 1 T= f Lecture 22 11 Equivalent Circuit RL VS + – C RON What is P for the following input? vIN T 2 T 2 T 6.002 Fall 2000 t 1 T= f Lecture 22 12 What is P for gate? We can show (see section 12.2 of A & L) 2 P= 2 VS RL 2 + CVS f 2( RL + RON ) (RL + RON )2 when RL >> RON 2 VS 2 P= + CVS f 2 RL er mb me re P STATIC independent of f MOSFET ON half the time 6.002 Fall 2000 be em rem r P DYNAMIC related . show (see section 12.2 of A & L) () () 2 ONL 2 L 2 S ONL 2 S RR R fCV RR2 V P + + + = fCV R2 V P 2 S L 2 S += when R L >> R ON What is for gate?. 1 e1VC 1 2 S1 2 S RindissipatedVC 2 1 E ,ConstoredVC 2 1 = CRTifVC 11 2 S >>≈ I.e., if we wait long enough Independent of R! 6.002 Fall 2000 Lecture

Ngày đăng: 22/12/2013, 19:17

Tài liệu cùng người dùng

Tài liệu liên quan