4N35.PDF

4N35-37 Optocoupler with Phototransistor Output Description The 4N35/ 36/ 37 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements 95 10532 Applications Galvanically separated circuits for general purposes Features D Isolation test voltage (RMS) 3.75 kV D Underwriters Laboratory (UL) 1577 D Low coupling capacity of typical 0.3 pF D Current Transfer Ratio > 100% recognized, file No E-76222 D Low temperature coefficient of the CTR Order Schematic Part Numbers 4N35 4N36 4N37 CTR-Ranking > 100% > 100% > 100% Pin Connection C E A (+) C (–) 95 10805 B nc TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 (8) 4N35-37 Absolute Maximum Ratings Input (Emitter) Parameters Reserve voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 60 100 125 Unit V mA A mW °C Symbol VCBO VCEO VECO IC ICM PV Tj Value 70 30 50 100 150 125 Unit V V V mA mA mW °C Symbol VIO 1) Ptot Tamb Tstg Tsd Value 3.75 250 –55 to +100 –55 to +125 260 Unit kV mW °C °C °C Output (Detector) Parameters Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions tp/T = 0.5, ≤ 10 ms Tamb ≤ 25°C Coupler Parameters Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 1) (8) Test Conditions Tamb ≤ 25°C mm from case, t ≤ 10 s related to standard climate 23/50 DIN 50014 TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 4N35-37 Electrical Characteristics Tamb = 25°C, unless otherwise specified Input (Emitter) Parameters Forward voltage Junction capacitance Test Conditions IF = 10 mA Tamb = 100°C VR = 0, f = MHz Symbol VF VF Cj Min Test Conditions IC = 100 mA IC = mA IE = 100 mA IF = 0, E = VCE = 10 V, VCE = 30 V, Tamb = 100°C Symbol VCBO VCEO VECO Min 70 30 Test Conditions f = 50 Hz, t = s Symbol VIO 1) Typ 1.2 Max 1.5 1.4 Unit V V pF Typ Max Unit V V V 50 500 Typ Max 50 Output (Detector) Parameters Collector base voltage Collector emitter voltage Emitter collector voltage Collector dark current ICEO ICEO nA mA Coupler Parameters Isolation test voltage (RMS) Isolation resistance IC/IF Collector emitter saturation voltage Cut-off frequency Coupling capacitance 1) VI0 = kV, 40% relative humidity IF = 10 mA, VCE = 10 V Tamb = 100°C IF = 10 mA, IC = 0.5 mA IF = 10 mA, VCE = V, RL = 100 W f = MHz Min 3.75 RIO 1) CTR CTR VCEsat Unit kV W 1012 0.4 0.3 V fc 110 kHz Ck 0.3 pF related to standard climate 23/50 DIN 50014 TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 (8) 4N35-37 Switching Characteristics VS = 10 V, IC = mA, RL = 100 W (see figure 1) Parameters Turn-on time Turn-off time Test Conditions Symbol ton toff Min Typ 5.5 4.5 Max 10 10 Unit ms ms Symbol ton toff Min Typ 18 Max Unit ms ms VS = V, IF = 10 mA, RL = kW (see figure 2) Parameters Turn-on time Turn-off time Test Conditions IF + 10 V IF I C = mA ; R G = 50 W T Adjusted through input amplitude = 0.01 t p = 50 ms Channel I Oscilloscope Channel II 50 W 100 W RL CL w MW v 20 pF 95 10845 Figure Test circuit, non-saturated operation IF +5V IF = 10 mA IC R G = 50 W T = 0.01 t p = 50 ms Channel I Oscilloscope Channel II 50 W kW RL CL w MW v 20 pF 95 10844 Figure Test circuit, saturated operation (8) TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 4N35-37 Typical Characteristics (Tamb = 25°C, unless otherwise specified) 10000 Coupled device 250 ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 300 200 Phototransistor 150 IR-diode 100 50 VCE=10V IF=0 1000 100 10 40 80 120 Tamb – Ambient Temperature ( °C ) 96 11700 Figure Total Power Dissipation vs Ambient Temperature 96 11875 I CB – Collector Base Current ( mA ) I F – Forward Current ( mA ) 1.000 100.0 10.0 1.0 0.1 VF – Forward Voltage ( V ) CTR rel – Relative Current Transfer Ratio Figure Forward Current vs Forward Voltage VCE=10V IF=10mA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 10 20 30 40 50 60 70 80 96 11874 0.100 0.010 96 11876 10 100 IF – Forward Current ( mA ) Figure Collector Base Current vs Forward Current 100.00 1.5 1.3 VCB=10V 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tamb – Ambient Temperature ( °C ) Figure Rel Current Transfer Ratio vs Ambient Temperature TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 VCE=10V IC – Collector Current ( mA ) 1.4 Tamb – Ambient Temperature ( °C ) Figure Collector Dark Current vs Ambient Temperature 1000.0 96 11862 10 20 30 40 50 60 70 80 90 100 10.00 1.00 0.10 0.01 0.1 96 11904 1.0 10.0 100.0 IF – Forward Current ( mA ) Figure Collector Base Current vs Forward Current (8) 4N35-37 Typical Characteristics (Tamb = 25°C, unless otherwise specified) 100 1000 CTR – Current Transfer Ratio ( % ) IC – Collector Current ( mA ) 20mA IF=50mA 10mA 10 5mA 2mA 1mA VCE=10V 100 10 0.1 0.1 100 10 VCE – Collector Emitter Voltage ( V ) 95 10985 1.0 0.8 20% 0.6 CTR=50% 0.4 0.2 10% 50 Saturated Operation VS=5V RL=1kW 40 30 toff 20 10 100 10 IC – Collector Current ( mA ) ton 800 VCE=10V 600 5V 400 200 10 20 15 IF – Forward Current ( mA ) Figure 13 Turn on / off Time vs Forward Current t on / t off – Turn on / Turn off Time ( m s ) 1000 0.01 95 10974 Figure 10 Collector Emitter Sat Voltage vs Collector Current hFE – DC Current Gain 100 10 95 10972 95 10973 IF – Forward Current ( mA ) Figure 12 Current Transfer Ratio vs Forward Current t on / t off – Turn on / Turn off Time ( m s ) VCEsat – Collector Emitter Saturation Voltage ( V ) Figure Collector Current vs Collector Emitter Voltage 20 Non Saturated Operation VS=10V RL=100W 15 toff 10 ton 0.1 10 100 IC – Collector Current ( mA ) Figure 11 DC Current Gain vs Collector Current (8) 0.1 95 10976 95 10975 10 IC – Collector Current ( mA ) Figure 14 Turn on / off Time vs Collector Current TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 4N35-37 Dimensions in mm 14770 weight: creeping distance: air path: 0.50 g mm mm y y after mounting on PC board TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 (8) 4N35-37 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to Meet all present and future national and international statutory requirements Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs) The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years Various national and international initiatives are pressing for an earlier ban on these substances TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and not contain such substances We reserve the right to make changes to improve technical design and may so without further notice Parameters can vary in different applications All operating parameters must be validated for each customer application by the customer Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use TEMIC TELEFUNKEN microelectronic GmbH, P.O.B 3535, D-74025 Heilbronn, Germany Telephone: 49 ( ) 7131 67 2831, Fax number: 49 ( ) 7131 67 2423 (8) TELEFUNKEN Semiconductors Rev A2, 12-Dec-97