4N25.PDF

4N25V(G)/ 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos and Classification table is on sheet Description The 4N25V(G)/ 4N35V(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements 95 10531 95 10532 Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): D For application class I – IV at mains voltage < 300 V D For application class I – III at mains voltage < 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, computer peripheral interface, microprocessor system interface, line receiver These couplers perform safety functions according to the following equipment standards: D VDE 0884 Optocoupler providing protective separation D VDE 0804 Telecommunication apparatus and data processing D VDE 0805/IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0860/IEC 65 Safety for mains-operated electronic and related household apparatus TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 (12) 4N25V(G)/ 4N35V(G) Series Features D Approvals: D Creepage current resistance according to BSI: BS EN 41003, BS EN 60065 (BS 415) BS EN 60950 (BS 7002) Certificate number 7081 and 7402 FIMKO (SETI): EN 60950 Certificate number 41400 Underwriters Laboratory (UL) 1577 recognized-file No E-76222 VDE 0884 Certificate number 94778 VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm General features: D Isolation materials according to UL94-VO D Pollution degree (DIN/VDE 0110 part resp IEC 664) VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore extra low coupling capacity typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Coupling System A VIORM = 600 VRMS Order Schematic Part Numbers 4N25V/ 4N25GV 4N35V/ 4N35GV Suffix: CTR-Ranking >20% >100% G = Leadform 10.16 mm Pin Connection C E A (+) C (–) 95 10805 B (12) nc TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 4N25V(G)/ 4N35V(G) Series Absolute Maximum Ratings Input (Emitter) Parameters Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM Ptot Tj Value 60 100 125 Unit V mA A mW °C Symbol VCEO VCEO IC ICM Ptot Tj Value 32 50 100 150 125 Unit V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 –55 to +100 –55 to +125 260 Unit kV mW °C °C °C Output (Detector) Parameters Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, ≤ 10 ms Tamb ≤ 25°C Coupler Parameters Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 Test Conditions Tamb ≤ 25°C mm from case, t ≤ 10 s (12) 4N25V(G)/ 4N35V(G) Series Maximum Safety Ratings1) (according to VDE 0884) Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Test Conditions Symbol VIOTM Tsi Value 150 Unit kV °C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature 1) This device is used for protective separation against electrical shock only within the maximum safety ratings This must be ensured by using protective circuits in the applications Derating Diagram 300 250 200 Phototransistor Psi ( mW ) 150 100 IR Diode Isi ( mA ) 50 0 94 9182 (12) 25 50 75 100 125 150 Tamb ( °C ) TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 4N25V(G)/ 4N35V(G) Series Electrical Characteristics Tamb = 25°C Input (Emitter) Parameters Forward voltage Junction capacitance Test Conditions IF = 50 mA 2) VR = 0, f = MHz Symbol VF Cj Min Typ 1.2 50 Max 1.4 Unit V pF Test Conditions IC = mA IE = 100 mA VCE = 10 V, IF = 2) VCE = 30 V, IF = 2) Symbol VCEO VECO ICEO ICEO Min 32 Typ Max Unit V V nA mA Test Conditions f = 50 Hz, t = s Symbol VIO Min 3.75 IF = 50 mA, IC = mA VCEsat VCE = V, IF = 10 mA, RL = 100 W f = MHz fc 110 kHz Ck pF Output (Detector) Parameters Collector emitter voltage Emitter collector voltage Collector emitter cut-off current 50 500 Coupler Parameters Isolation test voltage (RMS) Collector emitter saturation voltage Cut-off frequency Coupling capacitance 2) Typ Max Unit V 0.3 V Tamb = 100°C Current Transfer Ratio (CTR) Parameters Test Conditions IC/IF VCE = 10 V, IF = 10 mA IC/IF VCE = 10 V, IF = 10 mA IC/IF VCE = 10 V, IF = 10 mA, Tamb = 100°C TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 Type 4N25V(G) 4N35V(G) 4N35V(G) Symbol CTR CTR CTR Min 0.20 1.00 0.40 Typ 1.5 Max Unit (12) 4N25V(G)/ 4N35V(G) Series Switching Characteristics (Typical Values) VS = V Type yp td[ms] 4.0 2.5 4N25V(G) 4N35V(G) IF tr[ms] 7.0 3.0 RL = 100 W (see figure 1) RL = kW (see figure 2) ton[ms] ts[ms] tf[ms] toff[ms] IC[mA] ton[ms] toff[ms] IF[mA] 11.0 0.3 6.7 7.0 5.0 25.0 42.5 10.0 < 10 0.3 4.2 < 10 2.0 9.0 25.0 10.0 + 10 V IF I C = 10 mA ; R G = 50 W T Adjusted through input amplitude = 0.01 t p = 50 ms Channel I Oscilloscope Channel II 50 W 100 W RL CL w MW v 20 pF 95 10793 Figure Test circuit, non-saturated operation IF +5V IF = 10 mA IC R G = 50 W T = 0.01 t p = 50 ms Channel I Oscilloscope Channel II 50 W kW RL CL w MW v 20 pF 95 10844 Figure Test circuit, saturated operation (12) TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 4N25V(G)/ 4N35V(G) Series Insulation Rated Parameters (according to VDE 0884) Parameters Routine test Lot test Partial discharge (sample test) test voltage Test Conditions 100%, ttest = s tTr = 10 s, ttest = 60 s (see figure 3) VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb =150°C Insulation resistance Symbol Vpd VIOTM Min 1.6 Typ Max Unit kV kV Vpd 1.3 kV RIO 1012 W RIO 1011 W RIO 109 W (construction test only) VIOTM V t1, t2 t3, t4 ttest tstres = to 10 s =1s = 10 s = 12 s VPd VIOWM VIORM tTr = 60 s t3 ttest t4 t1 t2 tstres t 13930 Figure Test pulse diagram for sample test according to DIN VDE 0884 TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 (12) 4N25V(G)/ 4N35V(G) Series Typical Characteristics (Tamb = 25°C, unless otherwise specified) 10000 300 P tot – Total Power Dissipation ( mW ) Coupled device ICEO– Collector Dark Current, with open Base ( nA ) 250 200 Phototransistor 150 IR-diode 100 50 VCE=10V IF=0 1000 100 10 40 80 120 Tamb – Ambient Temperature ( °C ) 96 11700 Figure Total Power Dissipation vs Ambient Temperature 96 11875 I CB – Collector Base Current ( mA ) I F – Forward Current ( mA ) 1.000 100.0 10.0 1.0 0.1 VF – Forward Voltage ( V ) CTR rel – Relative Current Transfer Ratio Figure Forward Current vs Forward Voltage VCE=10V IF=10mA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 10 20 30 40 50 60 70 80 96 11874 Tamb – Ambient Temperature ( °C ) Figure Rel Current Transfer Ratio vs Ambient Temperature (12) 0.100 0.010 96 11876 10 100 IF – Forward Current ( mA ) Figure Collector Base Current vs Forward Current 100.00 1.5 1.3 VCB=10V 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VCE=10V IC – Collector Current ( mA ) 1.4 Tamb – Ambient Temperature ( °C ) Figure Collector Dark Current vs Ambient Temperature 1000.0 96 11862 10 20 30 40 50 60 70 80 90 100 10.00 1.00 0.10 0.01 0.1 96 11904 1.0 10.0 100.0 IF – Forward Current ( mA ) Figure Collector Current vs Forward Current TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 4N25V(G)/ 4N35V(G) Series Typical Characteristics (Tamb = 25°C, unless otherwise specified) 1000 IC – Collector Current ( mA ) IF=50mA CTR – Current Transfer Ratio ( % ) 100.0 20mA 10.0 10mA 5mA 1.0 2mA 1mA 0.1 0.1 100 10 1.0 10.0 100.0 VCE – Collector Emitter Voltage ( V ) 96 11905 0.1 0.8 20% 0.6 CTR=50% 0.4 0.2 10% 50 Saturated Operation VS=5V RL=1kW 40 30 toff 20 10 ton 100 10 IC – Collector Current ( mA ) 95 10972 800 VCE=10V 600 5V 400 200 10 20 15 Figure 14 Turn on/ off Time vs Forward Current t on / t off – Turn on / Turn off Time ( m s ) 1000 0.01 IF – Forward Current ( mA ) 95 10974 Figure 11 Collector Emitter Sat Voltage vs Collector Current hFE – DC Current Gain 100 10 Figure 13 Current Transfer Ratio vs Forward Current t on / t off – Turn on / Turn off Time ( m s ) 1.0 95 10973 IF – Forward Current ( mA ) 95 10976 Figure 10 Collector Current vs Collector Emitter Coltage VCEsat – Collector Emitter Saturation Voltage ( V ) VCE=10V 20 Non Saturated Operation VS=10V RL=100W 15 toff 10 ton 0.1 10 100 IC – Collector Current ( mA ) Figure 12 DC Current Gain vs Collector Current TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 95 10975 10 IC – Collector Current ( mA ) Figure 15 Turn on/ off Time vs Collector Current (12) 4N25V(G)/ 4N35V(G) Series Dimensions in mm Leadform 10.16 mm (G-type) 14771 weight: ca creeping distance: air path: 0.50 g mm mm y y after mounting on PC board 10 (12) TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 4N25V(G)/ 4N35V(G) Series Dimensions in mm 14770 weight: creeping distance: air path: 0.50 g mm mm y y after mounting on PC board TELEFUNKEN Semiconductors Rev A2, 12-Dec-97 11 (12) 4N25V(G)/ 4N35V(G) Series Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to Meet all present and future national and international statutory requirements Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs) The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years Various national and international initiatives are pressing for an earlier ban on these substances TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and not contain such substances We reserve the right to make changes to improve technical design and may so without further notice Parameters can vary in different applications All operating parameters must be validated for each customer application by the customer Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use TEMIC TELEFUNKEN microelectronic GmbH, P.O.B 3535, D-74025 Heilbronn, Germany Telephone: 49 ( ) 7131 67 2831, Fax number: 49 ( ) 7131 67 2423 12 (12) TELEFUNKEN Semiconductors Rev A2, 12-Dec-97