SCHOOL OF ELECTRONICS AND TELECOMMUNICATIONS
PROJECT REPORT MID-TERM
Name of students: Name of instructor:
Trang 2Table of Contents
List of Figures 3
List of Tables 4
ABSTRACT 5
1.Introduction 6
1 1.Purpose 6
2.Specification 6
2 1.Executive
Summary 6
2.1.1.Project Overview 6
2.1.2.Purpose and Scope 6
2 2.Project Description 6
2.2 1.Project
Context 6 2.2.2.Assumptions 6
2.2.3 Parameters 7
2.2.4 Development Time 7
Trang 32.2.5 Development Cost 7
3 Planning 7
3 1.Task Table 8
7-3.2 Human Resource Table 9
8-4 Designing 10
4.1 Requirements 10
4.1.1 Electrical Constraints 10
4.1.2 Functional Requirements 10
4.2 Circuit Components 10
4.2.1 Choose components on Spice 10
4.2.1.1 PNP BJT 25N401 11
10-4.2.1.2 Resistor 12
11-4.2.1.3 Voltage Source 12
4.2.1.4 Ground 13
12-4.2.2 Set up the testing circuit on Spice 14
13-5 Testing 14
Trang 45.1 Input I-V characteristics simulation 15
5.1.1 DC sweep with 2 sources 17
15-5.1.2 Input I-V characteristics for the common Base configuration of the PNP BJT 2N5401 17-20
5.1 2.SPICE Netlist 20
5.2 Output I-V characteristics simulation 20
5.2.1 DC sweep with 2 sources 20
5.2.2 Output I-V characteristics for the common Base configuration of the PNP BJT 2N5401 21-22
5.1.2.1 SPICE Netlist 22
6 Calculation 23
22-CONCLUSION 24
List of Figures
Figure 4.2.1.1a: Component directory 11 Figure 4.1.1.1b: PNP BJT transistor 11 Figure 4.2.1.1c: Transistor properties and options 11
Trang 5Figure 4.2.1.1d: Pick New Transistor 11
Figure 4.2.1.1e: PNP BJT 2N5401 11
Figure 4.2.1.2: R1 Resistor 12
Figure 4.2.1.3: V1 Voltage source 13
Figure 4.2.1.4: Ground 13
Figure 4.2.2a: Component arrangements 14
Figure 4.2.2b: Overall circuit 14
Figure 5.1.1a: Edit Simulation Command 15
Figure 5.1.1b: DC sweep command 16
Figure 5.1.1c: “Edit text on the Schematic” 16
Figure 5.1.1d: Finished circuit for testing input I-V characteristics 17
Figure 5.1.2a: Linear graph with VEE horizontal axis 18
Figure 5.1.2b: Horizontal Axis 18
Figure 5.1.2c: Input or driving point characteristics for the common Base configuration 19
Figure 5.1.2d: Zoomed Fig 5.1.2 19
Figure 5.2.1: Finished circuit for testing output I-V characteristics 20
Figure 5.2.2: Output or collector characteristics for the common Base configuration 21
List of Tables Table 3.1 Task Table 8-9Table 3.2 Resources Assigning Table 9-10 Table 6.1 I & I values at V = 1V, 2V and V variesB CEECC 23
Trang 6ABSTRACT
LTSpice is a freeware computer software, implementing a SPICE simulator ofelectronic circuits, produced by semiconductor manufacturer Linear Technology(LTC) Bipolar Junction Transistor (BJT) is a single piece of silicon with twobackto-back P-N junctions It is constructed with three semiconductors pieces, twojunctions, and three terminals, emitter E, base B and collector C The goal of thisproject is to successfully design, simulate the circuit, and analyze the input andoutput I-V characteristics for a PNP BJT 2N5401 in a common Base configurationusing LTSpice In this report, the design and parameters specifications of the circuitare explained The circuit involves resistors, independent voltage and currentsources
Trang 7and V values are then applied at Run to produce input and output I-V characteristics.Results from the simulation are used to calculate the current gain values (α, β) of thePNP BJT 2N5401 Results might vary based on a different parameters’ values
2.1.2.Purpose and Scope
This report addresses all requirements, planning, and testing needed to simulate and analyze the electronic circuit, the input and output I-V characteristics of the common Base configuration of the PNP BJT 2N5401
Trang 8- It is assumed that the project should be simple
2.2.3 Parameters
Modified Gummel-Poon BJT Parameters
1 IS transport saturation current A 1.0E-16 1.0E-15
4 ISE B-E leakage saturation current A 0 1.0E-13 5 NE B-E leakage emission coefficient - 1.5 2
8 ISC B-C leakage saturation current A 0 1.0E-13 9 NC B-C leakage emission coefficient - 2 1.5
13 CJE B-E zero-bias depletion capacitance F 0 2PF
16 CJC B-C zero-bias depletion capacitance F 0 2PF
19 CJS zero-bias collector-substrate F 0 2PF capacitance
20 JS substrate junction built-in potential V 0.75
Our project consists of 8 tasks Each task has its own deliverables The project starts
on August 20, and ends on August 27
Trang 9No Task Name Duration Date Date iesFormat
#1
Create schematic design for thecircuit
2 days Aug 20, 2021
Aug 22, 2021
#1 Specification requirements documented in MS Word format
#2
Create resources table and tasks allocation
< 1 day Aug 21, 2021
Aug 21, 2021
1 day Aug 22, 2021
Aug 22 2021
#4 Simulate the circuit < 1 day
Aug 22 2021
Aug 23, 2021
#5
Test circuit and troubleshoot any errors
< 1 day Aug 23 2021
Aug 23 2021
#6
Test finished circuit and analyze the results
< 1 day Aug 24 2021
Aug 25 2021
#7 Calculation 1 day Aug 25 2021
Aug 26 2021
#5 Report in MS Word format
Trang 10#8 Report
2021 27, 2021
#5 Report in MS Word format
Table 3.1 Task Table
There are 3 people on our team Since each member has different strengths and weaknesses, we have created the following task allocations table according to personal competence and preferences
Task No.Task NameMember Name
#1 Create schematic design for the circuit
#2 Create resources table and tasks allocation
#3 Design and analyze functional requirements
#4 Simulate the circuit #5 Test circuit and
trouble-shoot any errors
#6 Test finished circuits and analyze the results
#7 Calculation
Trang 114.1.2.Functional Requirements
- Produce input I-V characteristics of the common Base configuration - Produce output I-V characteristics of the common Base configuration.- Accurate PNP BJT 2N5401 circuit
Trang 12→ Search PNP choose PNP we have a new PNP BJT transistor is
present on the schematic (Fig 4.2.1.1b)
→ Right-click on the PNP BJT transistor, showing its properties and options
(Fig 4.2.1.1c)
→ Choose “Pick New Transistor” option Choose PNP BJT model 2N5401
(Fig 4.2.1.1d)
→ We have a PNP BJT 2N5401 transistor on the schematic (Fig 4.2.1.1e)
Figure 4.2.1.1d: Pick New Transistor Figure 4.2.1.1e: PNP BJT 2N5401
4.2.1.2 Resistor
On the same schematic:
→ Click on the Resistor symbol on the tool bar
→ We have a new resistor R1 is present on the schematic (Fig 4.2.1.2)
Figure 4.2.1.1a: Component directory Figure 4.2.1.1b: PNP BJT transistor Figure 4.2.1.1c: Transistor proper琀椀es and op琀椀ons
Trang 13Right-click on “R1” to change the name of the resistor ❖ Right-click on “R” or click the component directly to change the
resistance
Figure 4.2.1.2: R1 Resistor
4.2.1.3 Voltage Source
On the same schematic:
→ Click on the Component symbol on the tool bar to show the component directory (Fig 4.2.1.1a)
→ Search Voltage choose Voltage we have a new voltage source V1 on the schematic (Fig 4.2.1.3a)
❖ To change the name and the value of the Voltage Source, similar to section 4.2.2.2 Resistor
Trang 14→ We have a new ground on the schematic (Fig 4.2.1.4)
Figure 4.2.1.4 Ground
Note:
• To move/rotate one component, right-click and choose Move To move/rotate one or more components, right-click and choose drag
• Press Ctrl-R to rotate component 90 clock-wise.
• Press Ctrl-E to mirror component.
4.2.2 Set up the testing circuit on Spice
→ Arrange, rename and assign values to the components as required: R = 1k , E RC = 5k , V1 = VEE & VCC (Fig 4.2.2a)
→ Right-click on the VEE source to set the signal source by choosing “Advanced” option choose (none) for Functions
→ Apply similar setting to VCC
→ Click on the Wire symbol on the tool bar to connect all components → Click on the Label Net symbol to assign Net Name as “C” or “E” or
“B” and arrange them correctly on the circuit → We have the overall testing circuit (Fig 4.2.2b)
Trang 15Figure 4.2.2b: Overall circuit
5 Testing
After completed desgning the testing circuit, we will simulate it on SPICE with DC sweep We then proceed with error checking and trouble-shooting when running Part 5 presents the simulation and its results
5.1 Input I-V characteristics simulation
Since the equation for the static input I-V characteristic curves plotting is , we plot V against I with V as the parameter (a set f-curves EBE, CBfor different values of VCB)
begin the simulation:
→ Click on the Run symbol on the tool bar which shows an “Edit Simulation Command” (on Fig 5.1.1a)
Trang 16➢ Name of 1 source to sweep: VEE st
➢ Type of sweep: Linear
➢ Start value and Stop value (optional): 0 & 1, respectively ➢ Increment: 0.001
Note:
• The smaller the horizontal axis increment, the smoother the graph
❖ For the 2 source nd
➢ Name of 2 source to sweep: VCC nd
➢ Type of sweep: Linear
➢ Start value and Stop value (optional): 5 & 30, respectively ➢ Increment: 5
→ Click on “OK” and we have finished setting DC sweep (Fig 5.1.1b)
Trang 17→ To add theorical equations to the schematic, click on SPICE Directive symbol on the tool bar
→ Choose “Edit text on the Schematic” and apply settings as shown on Fig 5.1.1c
Figure 5.1.1c: “Edit Text on the Schematic”
→ We have the finished testing circuit (Fig 5.1.1d)
Figure 5.1.1d: Finished testing circuit for input I-V characteristics
5.1.2 Input I-V characteristics for the common Base configuration of the PNP BJT
2N5401
To display the input/driving point characteristics for the common Base configurationof the PNP BJT 2N5401 in linear sweep:
→ Click on the Run symbol on the tool bar
→ Right-click AutoRange on the tool bar to set graph display option
Trang 18 Choose “Tile Windows Vertically”
→ We have the linear graph with the horizontal axis is VEE (Fig 5.1.2a)
Figure 5.1.2a: Linear graph with VEE horizontal axis
→ To change the voltage values of the graph, right-click the area below the horizontal axis of the graph to display a “Horizontal Axis” option (Fig 5.1.2b)
Figure 5.1.2b: Horizontal Axis
→ Change “Quantity Plotted” from “V ” to “V(E)” ee
→ We have the linear graph of the input characteristics for the common Base configuration of the PNP BJT 2N5401 (Fig 5.1.2c)
Trang 19Figure 5.1.2c: Input or driving point characteristics for the common Base configuration
Figure 5.1.2.d: Zoomed Fig 5.1.2.2c
Trang 205.1.2.1 SPICE Netlist o PNP BJT 2N5401 Input I-V characteristics
VEE N001 0 RE E N001 1k Bjtpnp C 0 E 0 2N5401 RC N002 C 5k VCC 0 N002 model PNP PNP
.dc VEE 0 1 0.001 VCC 5 30 5
5.2 Output I-Vcharacteristic simulation
Since the static output characteristic curves plotting equation is , we plot I against VC CB, with IE as parameter (plot curves for different values of I ) E
begin the simulation:
→ Similar DC sweep setting to section 5.1 Input I-V characteristics simulation but VCC = 1 source & VEE = 2 source stnd
→ Add theoretical equations to the schematic, similar to section 5.1Input IVcharacteristics (on Fig 5.2.1)
Figure 5.2.1: Finished testing circuit for output I-V characteristic
Trang 21BJT 2N5401
To display the output/collector point characteristics for the common Base configuration of the PNP BJT 2N5401 in linear sweep:
→ Click on the Run symbol on the tool bar
→ Right-click on the graph to “Add Traces” Choose “I (Bjtpnp)” C→ To change the voltage values of the graph, right-click the area below the
horizontal axis of the graph to display a “Horizontal Axis” → Change “Quantity Plotted” from “V ” to “V(C)” CC
→ We have the linear graph of the output characteristics for the common Base configuration of the PNP BJT 2N5401 (Fig 5.2.2)
Figure 5.2.2: Output or collector characteristics for the common-Base configuration
Trang 22o PNP BJT 2N5401 Output I-V characteristics VEE N001 0
RE E N001 1k Bjtpnp C 0 E 0 2N5401 RC N002 C 5k VCC 0 N002 model PNP PNP
( and are determined at a particular operating point on the graph) IC IB
• For practical devices, typically ranges from about 50 to over 400, with most in βthe midrange
❖ For each value of VEE and V (Table 6.1), we use Spice to find the CC
corresponding I and I values with the following steps: CB
→ Set V =1V EE
→ Let DC sweep with 1 source is VCC Start st
value & Stop value: -1 & 10 respectively Increment: 0.001
Trang 23For I value:
→ We apply similar syntax:
.meas DC Ib1 FIND Ib(bjtpnp) WHEN VCC = 1.3V meas DC Ib2 FIND Ib(bjtpnp) WHEN VCC = 1.4V meas DC Ib3 FIND Ib(bjtpnp) WHEN VCC = 3V meas DC Ib4 FIND Ib(bjtpnp) WHEN VCC = 4V meas DC Ib5 FIND Ib(bjtpnp) WHEN VCC = 6V meas DC Ib6 FIND Ib(bjtpnp) WHEN VCC = 8V meas DC Ib7 FIND Ib(bjtpnp) WHEN VCC = 10V OK
→ Run
→ To view the values of I & I , click on “View” then choose “SPICE BC
Error Log” (Table 6.1)
→ Set V = 2V and carry out the same steps EE
Table 6.1: I & I values at V = 1V, 2V and V varies BCEECC
VCC (V)
IC (µA) I (µA) B β I (µA) C I (µA) B β 1.3 -370.72 -15.69 23.63 -394.86 -921.39 0.43 1.4 -382.48 -6.04 63.35 -414.70 -902.13 0.46 2 -385.69 -3.54 108.94 -533.71 -786.72 0.69 4 -386.23 -3.48 111.02 -929.32 -405.24 2.29 6 -386.75 -3.42 113.10 -1314.77 -39.72 33.10 8 -387.27 -3.36 106.87 -1345.36 -11.65 115.47 10 -387.77 -3.31 117.25 -1346.07 -11.44 117.68
From the table, we can see that
• At V = 1V: with the value of VCC is equal to approximately 1.4V or more , EE
we are able to calculate β
• At V = 2V: with the value of VCC is greater than 6, we can calculate β EE
Trang 24
CONCLUSION
For this project, we have built the PNP BJT 2N5401 testing circuit with allspecification and functional requirements, and successfully simulated it on LTSpiceprogram to produce the linear graphs of the input and the output I-V characteristicsfor the common Base configuration of the PNP BJT 2N5401 We studied thecharacteristics, construction, and working condition of a PNP BJT as well asimplementing LTSpice features Above is the step-by-step of our circuit simulationon LTSpice However, our graph would have been improved if we had used asmaller increment for the horizontal axis values Overall, the objectives of theproject were met