nanofabrication. principles, capabilities and limits, 2008, p.351

[...]... to control and restructure matters at 1–100 nm dimension and the creation of materials, devices, and structures around this dimension [2] It has been found that many materials and structures at below 100-nm dimensional scale can have properties and characteristics dramatically different from their bulk forms Therefore, the 100-nm dimensional scale has set the boundary between nanotechnology and all other... ultimate route for construction of nanodevices and nanosystems (Chapter 8) The principle and capability of each technology, specifically for making sub-100 nm structures, is introduced and illustrated, with minimum mathematics involved, because it is the author’s belief and experience that learning microfabrication or nanofabrication is very much a practical and hands-on process It is important to know the... Ta, and W Because EUV projection optics is reduction optics with reduction ratio of 4:1, the patterning of EUV absorber is less demanding Conventional electron beam lithography and reactive-ion etching (RIE) are adequate for the absorber patterning The most difficult part in EUV mask manufacturing is the defect inspection and repair There are two groups of defects: the defects in a mask blank and defects... microfabrication and nanofabrication technologies, including a book published in 2006 by the author [12] Most of the books published so far have been primarily dedicated to describing various microfabrication technologies, though methods for making sub-100 nm structures were mentioned here and there For anyone who is interested in nanotechnology and would like to know more about how nanoscale structures and devices... elements, and nanomechanical elements, etc They are the basic building blocks to form a variety of functional nanodevices and systems Nanofabrication, which differs from manufacturing of thin films and nanoparticles, is the key technology to enable this category of nanosystems 1.2 Nanofabrication Nanofabrication evolves from microfabrication Since the advent of first transistor in 1947, microelectronics and. .. state-of-the-art optical lithography, though capable of sub-100 nm patterning, is too expensive and not easily accessible; electron beam lithography is of high resolution and high flexibility but low throughput; scanning probes are simple and low-cost systems for sub-100 nm patterning, but the pattern area is small, speed is low, and patterning depth is shallow; nanoimprinting is best suitable for making high-density... the softness of stamp and lateral diffusion of inks; molecular self-assembly has to be guided in order to make any useful pattern structures, etc The present book tries to present a balanced view For each technology introduced, both its advantages and weaknesses are described, so that the readers are made aware of both positive and negative aspects of a nanofabrication technology and aware of its limits... 2007(December) 6 Chou, S.Y., P.R Krauss, and P.J Renstrom, Imprint of sub-25 nm vias and trenches in polymers Appl Phys Lett., 1995 67(21): p 3114 7 Xia, Y and G.M Whitesides, Soft lithography Angew Chem Int Ed., 1998 37: pp 550–575 8 Bjorkholm, J.E., EUV lithography—the successor to optical lithography? Intel Technol J 1998 Q3’98: p 1 9 Colburn, M., et al., Step and flash imprint lithography: A new approach... Proc SPIE 1999 3676: p 379 10 Tseng, A.A., A Notargiacomo, and T.P Chen, Nanofabrication by scanning probe microscope lithography: A review J Vac Sci Technol., 2005 B23(3): p 877 11 Zhirnov, V.V and D.J.C Herr, New frontiers: Self-assembly and nanoelectronics IEEE Comput., 2001 34(1): pp 34–43 12 Cui, Z., Micro-Nanofabrication Technologies and Applications 2006, Springer Chapter 2 Nanofabrication.. . projection optics, EUV mask, and EUV resist The state-of-the-art developments of the four critical components are described as following 2.3.2.1 EUV Source Extreme UV radiation can be generated by two methods: plasma and synchrotron radiation source (SRS) Synchrotron radiation source is a large-scale instrument which can only be built and owned by a national government and is mainly for fundamental . lithography—the successor to optical lithography? Intel Technol. J. 1998. Q3’98 :p. 1. 9. Colburn, M., et al., Step and flash imprint lithography: A new approach to high-resolution patterning. Proc. SPIE. alt="" Nanofabrication Zheng Cui Nanofabrication Principles, Capabilities and Limits 13 Zheng Cui Rutherford Appleton Laboratory Science and Technology Facility Counsil (STFC) Harwell Science and. Self-assembly and nanoelectronics. IEEE Comput., 2001. 34(1): pp. 34–43. 12. Cui, Z., Micro -Nanofabrication Technologies and Applications. 2006, Springer. 6 1 Introduction Chapter 2 Nanofabrication by Photons 2.1