1997 1 25 1/2 SEMICONDUCTOR TECHNICAL DATA KTD718 TRIPLE DIFFUSED NPN TRANSISTOR Revision No 0 HIGH POWER AMPLIFIER APPLICATION FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage C[.]
SEMICONDUCTOR KTD718 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION A Q K I F FEATURES B E ᴌRecommended for 45ᴕ50W Audio Frequency C Amplifier Output Stage G J H ᴌComplementary to KTB688 L D MAXIMUM RATING (Ta=25ᴱ) d CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO V Collector Current IC 10 A Base Current IB A Collector Power Dissipation (Tc=25ᴱ) PC 80 W Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range P P T M DIM A B C D d E F G H I J K L M P Q T MILLIMETERS 15.9 MAX 4.8 MAX _ 0.3 20.0 + _ 0.3 2.0 + 1.0+0.3/-0.25 2.0 1.0 3.3 MAX 9.0 4.5 2.0 1.8 MAX _ 0.5 20.5 + 2.8 _ 0.2 5.45 + _ 0.2 Φ3.2 + 0.6+0.3/-0.1 BASE COLLECTOR EMITTER TO-3P(N) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Cut-off Current ICBO VCB=120V, IE=0 - - 10 Ọ A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 Ọ A Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 120 - - V DC Current Gain hFE (Note) VCE=5V, IC=1A 55 - 160 VCE(sat) IC=6A, IB=0.6A - - 2.0 V Base-Emitter Voltage VBE VCE=5V, IC=5A - - 1.5 V Transition Frequency fT VCE=5V, IC=1A - 12 - MHz VCB=10V, IE=0, f=1MHz - 170 - pF Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification 1997 25 R:55ᴕ110, O:80ᴕ160 Revision No : 1/2 KTD718 I C - VCE h FE - IC 1k 300 200 100 50 I B =20mA 0 10 12 COMMON EMITTER VCE =5V 500 300 Tc=100 C Tc=25 C Tc=-25 C 100 50 30 10 0.01 14 COLLECTOR-EMITTER VOLTAGE VCE (V) 0.05 C Tc=25 C Tc=-25 C 0.03 0.03 0.1 0.3 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) I C MAX(PULSED) 00 Tc=1 0.01 0.01 10 30 0.3 0.1 0.3 SAFE OPERATING AREA COMMON EMITTER I C /I B =10 0.5 0.1 COLLECTOR CURRENT I C (A) VCE(sat) - I C 0.03 * I C MAX(CONTINUOUS) 10 DC O 00 Tc PER mS =2 A TI C ON * t=1mS * 10mS * 100mS * * SINGLE NONREPETITIVE PULSE Tc=25 C 0.3 VCEO MAX 400 10 COMMON EMITTER Tc=25 C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) 12 CURVES MUST BE DERATED LINEARLY WIHT INCREASE IN TEMPERATURE 0.1 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR POWER DISSIPATION P C (W) Pc - Ta 100 80 60 Ta=Tc INFINITE HEAT SINK 300x300x2mm Al HEAT SINK 200x200x2mm Al HEAT SINK 100x100x2mm Al HEAT SINK 40 NO HEAT SINK 20 0 40 80 120 160 200 240 AMBIENT TEMPERATURE Ta ( C) 1997 25 Revision No : 2/2 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components