mazda, f. (1997). power electronics handbook (3rd ed.)

'II -1 1. I mon Mazda 1 Power Electronics Handbook Third edition Fraidoon Mazda Newnos OXFORD AMSTERDAM BOSTON LONDON NEW YORK PARIS SAN DlEGO SAN FRANCISCO SINGAPORE SYDNEY TOKYO Newnes An imprint of Elsevier Science Linacre House, Jordan Hill, Oxford OX2 8DP 200 Wheeler Road, Burlington MA 0 1803 First published 1990 Second edition 1993 Third edition 1997 Transferred to digital printing 2003 Copyright Q 1990, 1993,1997 Fraidoon Mazda. All rights reserved The right of Fraidoon Mazda to be identified as the author of this work has been asserted in accordance with the Copyright, Designs and Patents Act 1988 No part of this publication may be reproduced in any material form (including photocopying or storing in any medium by electronic means and whether or not transiently or incidentally to some other use of this publication) without the written permission of the copyright holder except in accordance with the provisions of the Copyright, Designs and Patents Act 1988 or under the terms of a licence issued by the Copyright Licensing Agency Ltd, 90 Tottenham Court Road, London, England W1T 4LP. Applications for the copyright holder’s written permission to reproduce any part of this publication should be addressed to the publisher British Library Cataloguing in Publication Data A catalogue record for this book is available from the British Library Library of Congress Cataloguing in Publication Data A catalogue record for this book is available from the Library of Congress ISBN 0 7506 2926 6 For information on all Newnes publications visit our website at www.newnespress.com Printed and bound in Great Britain by Antony Rowe Ltd, Eastbourne Contents Preface Part 1 Components 1 Power semiconductor devices 2 Thermal design 3 Power semiconductor control components 4 Electromagnetic compatibility 5 Power semiconductor protection Part 2 Circuits 6 Power semiconductor circuits - a resum6 7 Static switches 8 A.C. line control 9 Phase-controlled rectification and inversion 10 Direct a.c. frequency converters 11 Forced commutation techniques 12 D.C. to d.c. converters 13 D.C. link frequency changers Part 3 Applications 14 Power semiconductor circuit applications Appendix 1 List of symbols Appendix 2 Glossary of terms Index vii 1 3 61 74 99 121 135 137 147 157 178 22 1 242 26 1 284 353 355 417 423 429 [...]... operating frequency (vii) The maximum power dissipation which the device can withstand This characteristic is often linked to the maximum junction temperature at which the device can operate and its thermal transfer characteristic, that is, its ability to transfer heat to a heatsink (viii) The power gain of the device, which is the ratio of the controlled power to the power needed in the control terminal... of the device, which is the ratio of the controlled power to the power needed in the control terminal The higher this gain, the lower the power dissipation in the control electronics of the power semiconductor 12 Fabrication process The manufacturing processes for power semiconductors closely resemble those used for other semiconductor devices These consist of the following, which are described further... regarding their turn-on point The power rectifier cannot be so controlled, since it will conduct as soon as the voltage at its anode is more positive than that at its cathode All other power devices described in this chapter, such as the transistor, thyristor, gate turn-off switch and triac, can be turned on (and sometimes off) by a control signal on an auxiliary input Some power devices can also be operated... drop across it, are much higher when in the linear mode Switching devices can handle greater power, since their dissipation is lower Their power gain is also generally higher, so that they need less drive current to control their operation The third operating mode is the type of signal required to control the power semiconductor devices Generally, this consists of an electrical signal, although in a... ( f ) turn-off characteristic - voltage curve - - 20 Power semiconductor devices during its lifetime This third current is usually used to blow protection fuses associated with the rectifier The working current of a rectifier may be specified as a direct current or as an average value (iii) The peak power dissipation which the device can withstand Power dissipation is linked to the device junction temperature...4 Power semiconductor devices (iii) Transportation applications, the largest being motor drives for areas such as electric vehicles, locomotives, and fork-lift trucks Equally important are non-motor drive applications, such as traffic signal control, vehicle electronic ignition and vehicle voltage regulation (iv) Aerospace and defence applications include VLF transmitters; power supplies... and defence applications include VLF transmitters; power supplies for space and aircraft; and switching using solid state relays and contactors 113 Power semiconductor operation This chapter describes the construction and characteristics of several types of power semiconductor devices These can generally be operated in different modes, due either to their construction or the application in which they... region.Tbis is low for diodes operating below about lWC, but is more significant for power devices whose junctions frequently operate above this temperature If the width of thep and n regions of a reverse-biased diode are W and W,,as measured from the edge of the depletion layer; Zp ancf,, are equilibrium concentrations of Power recrifier principles 15 minority carriers in the p and n regions, respectively;... usual to surround the field plate with an equipotential ring, as shown in Figure 1.7(c) This prevents the slow drifting breakdown, which field plate structures are prone to exhibit 18 Power semiconductordevices 1.4 Power rectitfer operation 1.4.1 The diode curve The symbol for a diode is shown in Figure 1.8(a) and its d.c characteristic in Figure 1.8(b) When the voltage across the diode is increased... large class of devices optical energy is used Finally, the voltage and current capability of power devices can be considerably increased by operating several of them in series or in parallel mode, so that the total voltage and current are shared across several devices 1.1.4 Device characteristics Many of the power semiconductor devices described here have special characteristics There are, however, . of power semiconductor circuits. Because there are a large number of different types of such circuits, this whole field is first surveyed in Chapter 6, to give the student a unified. pm of the silicon. The colour of the silicon surface changes with the thickness of the oxide layer, due to the shift in the wavelength of the reflected light. This effect is used as. describes a completely different application, the use of power electronics to vary the frequency of an a.c. supply without first going through d.c. These are also referred to as cycloconverters.