High k metal insulator metal (MIM) capacitors for RF mixed signal IC applications

... Fo und e d High- κ Metal- Insulator -Metal (MIM) Capacitors for RF/ Mixed- Signal IC Applications KIM SUN JUNG M Eng A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... 27.1 nm thick HfO2 MIM capacitors, which are low enough for most RF and analog applications The requirements for specific applications are indicated with dashed lines 34 Fig 3.4 Perf...

Ngày tải lên: 16/09/2015, 15:54

... MIM capacitors This section briefly reviews some of the dominant works on the high- k dielectrics in the MIM capacitors for RF applications The insulators used in these works can be classified into ... loss Metal Metal -Insulator -Metal capacitor Fig 1-2: Development of capacitors for silicon integrated circuit from poly-insulatorsilicon structure [4] to poly -insul...

Ngày tải lên: 10/09/2015, 08:31

... EOT = ε SiO T ε high − k high − k , phy (2-3) where EOT is the Equivalent Oxide Thickness of high- k dielectric, εSiO2 and high- k are the permittivity of SiO2 (3.9) and the high- k dielectrics, ... and Thigh -k, phy is the physical thickness of the high- k film In searching suitable high- κ dielectric materials for MIM capacitors, a simple criterion is h...

Ngày tải lên: 12/09/2015, 11:24

... Yoshitomi, Y Ebuchi, H Kimijama, T Ohguro, E Morifuji, H S Momose, K Kasai, K Ishimaru, F Matsuoka, Y Katsumata, M Kinugawa, and H Iwai, High performance MIM capacitor for RF BiCMOS LSIs,” in Proc ... method, and a high capacitance density of 17 fF/µm2 has been achieved for AlTaOx MIM capacitor [41] In particular, the RF performance of high- κ MIM capacitors have b...

Ngày tải lên: 16/09/2015, 17:11

... NetBust sang vi kiến trúc Core lúc với việc chuyển từ công nghệ 90nm sang công nghệ 65nm Và với hai năm sau, Intel thay đổi công nghệ 65nm công nghệ 45nm với vi kiến trúc Penryn, hai năm sau bạn ... công nghệ High-k 45nm Intel, họ vi xử lý Penryn xây dựng tính mang lại hiệu lượng vi kiến trúc Core với hai bổ xung quan trọng: công nghệ tắt nguồn s...

Ngày tải lên: 13/07/2014, 09:20

... SCHOTTKY SOURCE/ DRAIN TRANSISTOR INTEGRATED WITH HIGH- K AND METAL GATE FOR SUB- TENTH NM TECHNOLOGY LI RUI (B Sc., Univ of Science and Technology of China, CHINA) A THESIS SUBMITTED FOR THE ... integration of germanide Schottky source/ drain Ge channel MOSFET with high- k gate dielectric and metal gate for sub- tenth nm technology...

Ngày tải lên: 14/09/2015, 14:04

... NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE CMOS TECHNOLOGY Jianqiang Lin 2009 NOVEL III- V MOSFET INTEGRATED WITH HIGH- K DIELECTRIC AND METAL GATE FOR FUTURE ... 2006 [1.38] I Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai1 ,V Tokranov, M Yakimov, S Oktyabrsky, and J.C Lee “Self-Al...

Ngày tải lên: 16/10/2015, 15:37

... Hình 11: Công bố Intel nghiên cứu công nghệ high – k Phát kiến transistor high- k plus metal gate đột phá quan trọng Mặc dù tiếp tục giảm k ch thước transistor tới 45nm theo công nghệ cũ, không cần ... xuất theo công nghệ sử dụng hoàn toàn Hafnium Hình vẽ thể công nghệ thay Silicon – dioxide vật liệu high k mà Intel làm được: Hình 8: Công nghệ th...

Ngày tải lên: 17/05/2015, 18:10

... mask effect on gate stacks of metal electrode / high- K dielectric should be investigated and understood for successful implementation of hard mask in the gate stack 1.3.4 Challenges of Metal Electrode ... replace current SiO2 dielectric and poly-Si electrode for continuous success of CMOS technology The study on the formation of advanced gate stacks usin...

Ngày tải lên: 12/09/2015, 08:16

... MOSFET scaling 1.2 High- k dielectrics 1.3 Metal gates 1.4 Band alignments 1.4.1 Band offsets at high- k dielectrics/ semiconductor interfaces 1.4.2 Schottky barrier height at metal gate /high- k dielectrics ... dielectrics/ semiconductor interfaces 1.4.2 Schottky barrier height for metal gate /high- k dielectrics interfaces While metal gate shows its advantages as...

Ngày tải lên: 14/09/2015, 13:27

... etching process can be used for metal gate integration using the AlN layer Although a wider range of work function was obtained using FUSI HfSi gate on SiO2, more study HfSi gate on high- K dielectric ... several gate dielectrics has been explained using experimental data in conjunction with interface dipole theory [1.52] The work function of polysilicon gates on high- K,...

Ngày tải lên: 16/09/2015, 08:31

... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...

Ngày tải lên: 03/10/2015, 20:31

... Polarisation 15 2.3 High Electron Mobility Transistor 17 2.4 Metal- Oxide- Semiconductor High Electron Mobility Transistor 18 Chapter Device Fabrication and Characterisation 3.1 Mask Design 21 21 3.1.1 ... Field Effect Transistor MODFET Modulation Doped Field Effect Transistor HEMT High Electron Mobility Transistor MOSFET Metal- Oxide- Semiconductor Field...

Ngày tải lên: 12/10/2015, 17:36

... the rate of formation of eÀ/hþ pairs at the nearby N-TiO2 particle surface (i.e., at the semiconductor liquid interface) The advantage of the formation of eÀ/hþ pairs near the semiconductor surface ... dependence of the surface concentration of hþ on the light intensity for Ag/N-TiO2 is another indication that charge carriers are formed close to the semic...

Ngày tải lên: 18/09/2013, 21:27

... decomposition process usually completes faster for thinner SRSO layer, resulting in the formation of Si- ncs and SiO2 phase (instead of SiOx one) So, the formation of Si- ncs/SiO2 barrier instead of Si- ncs/SiO ... al.: Hf-based high-k materials for Si nanocrystal floating gate memories Nanoscale Research Letters 2011 6:172 Submit your manuscript to a journal and benefit f...

Ngày tải lên: 21/06/2014, 05:20