vlsi design course lecture notes guide-celllayout

topology course lecture notes - a. mccluskey, b. mcmaster

... on xnk. So eventually B(xnk,1nk) is inside Gi0, contradictory to18Topology Course Lecture Notes Aisling McCluskey and Brian McMasterAugust 1997their choice! (More rigorously, there ... sequence is just a function having the positive integers as do-main. The set of positive integers, of course, possesses a particularly simpleordering; there is a ﬁrst member, second member, third member,...

VLSI DESIGN Thiết kế vi mạch số - Chapter 0: Course Introduction docx

... KHOAKHOA ĐIỆN-ĐIỆN TỬ BỘ MÔN KỸ THUẬT ĐIỆN TỬ11 VLSI DESIGN Thiết kế vi mạch sốChapter 0: Course IntroductionBộ môn Kỹ Thuật Điện Tử Course Information• Instructor– Truong Quang Vinh, ... http://www4.hcmut.edu.vn/~tqvinh– Office: 116B1, IC Design Lab, Monday 9-11am2Bộ môn Kỹ Thuật Điện TửTextbooks1. Neil Weste and David Harris, CMOS VLSI Design A Circuits and Systems Perspective, ... Văn On, Thiết kế vi mạch CMOS VLSI - tập 1, NXB Phương Đông, 20073.Tống Văn On, Thiết kế vi mạch CMOS VLSI - tập 2, NXB Phương Đông, 20073Bộ môn Kỹ Thuật Điện Tử Course Description• Provide...

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CMOS VLSI Design - Lecture 1: Introduction ppt

... 1sdgsdsdsdnMOSpMOSOFFONONOFFCMOS VLSI Design 4th Ed.0: Introduction 120VDDA YGNDCMOS InverterA Y0 11 0A YOFFON 1ONOFFCMOS VLSI Design 4th Ed.0: Introduction 13CMOS ... OFFONOFF10ON ON OFFOFF00ABYCMOS VLSI Design 4th Ed.0: Introduction 14CMOS NOR GateA B Y0 0 10 1 01 0 01 1 0ABYCMOS VLSI Design 4th Ed.0: Introduction 153-input NAND ... substrateCMOS VLSI Design 4th Ed.0: Introduction 23Oxidation Grow SiO2on top of Si wafer– 900 – 1200 C with H2O or O2in oxidation furnacep substrateSiO2CMOS VLSI Design 4th Ed.0:...

CMOS VLSI Design - Lecture 2: Circuits & Layout docx

... CMOS VLSI Design 4th Ed.1: Circuits & Layout 10And Now…CMOS VLSI Design 4th Ed.1: Circuits & Layout 11Feature Size Minimum feature size shrinking 30% every 2-3 yearsCMOS VLSI Design ... frequency, processor performanceCMOS VLSI Design 4th Ed.1: Circuits & Layout 13CMOS Gate Design  Activity:– Sketch a 4-input CMOS NOR gateABCDYCMOS VLSI Design 4th Ed.1: Circuits & ... DBDYACACABCDBDY(a)(c)(e)(b)(d)(f)CMOS VLSI Design 4th Ed.1: Circuits & Layout 18Example: O3AI ( )Y ABCD= ++ A BYCDDCBACMOS VLSI Design 4th Ed.1: Circuits & Layout...

CMOS VLSI Design - Lecture 3: CMOS Transistor Theory potx

... SaturationVgVsVdVgdVgsVds+-+-+-CMOS VLSI DesignCMOS VLSI Design 4th Ed.3: CMOS Transistor Theory 6nMOS Cutoff No channel Ids≈ 0+-Vgs = 0n+ n++-Vgdp-type bodybgsdCMOS VLSI DesignCMOS VLSI Design 4th ... Cgfor contacted diff– ½ Cgfor uncontacted– Varies with process Lecture 3: CMOS Transistor TheoryCMOS VLSI DesignCMOS VLSI Design 4th Ed.3: CMOS Transistor Theory 2Outline Introduction ... E-field – v = µE µ called mobility Time for carrier to cross channel:– t = L / vCMOS VLSI DesignCMOS VLSI Design 4th Ed.3: CMOS Transistor Theory 12nMOS Linear I-V Now we know– How much...

CMOS VLSI Design - Lecture 4: Nonideal Transistor Theory pdf

... ox2q2qAANtNCεγεε= =CMOS VLSI DesignCMOS VLSI Design 4th Ed.4: Nonideal Transistor Theory 16Body Effect Cont. For small source-to-body voltage, treat as linearCMOS VLSI DesignCMOS VLSI Design 4th Ed.4: ... LCMOS VLSI DesignCMOS VLSI Design 4th Ed.4: Nonideal Transistor Theory 19Leakage What about current in cutoff? Simulated results What differs?– Current doesn’tgo to 0 in cutoff Lecture ... 1.8 70 CS 1.62 125 CCMOS VLSI DesignCMOS VLSI Design 4th Ed.4: Nonideal Transistor Theory 31Process Corners Process corners describe worst case variations– If a design works in all corners,...

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CMOS VLSI Design - Lecture 5: DC & Transient Response doc

... inverterCCR2C2CR21AYC2CC2CC2CRY21d = 6RCCMOS VLSI DesignCMOS VLSI Design 4th Ed.5: DC and Transient Response 28Delay Model ComparisonCMOS VLSI DesignCMOS VLSI Design 4th Ed.5: DC and Transient Response ... −Vout(t)Vin(t)t0tVin(t)Vout(t)CloadIdsn(t) Lecture 5: DC & Transient ResponseCMOS VLSI DesignCMOS VLSI Design 4th Ed.5: DC and Transient Response 20Delay Definitions ... CMOS VLSI DesignCMOS VLSI Design 4th Ed.5: DC and Transient Response 10Current vs. Vout, VinVin5Vin4Vin3Vin2Vin1Vin0Vin1Vin2Vin3Vin4Idsn, |Idsp|VoutVDDCMOS VLSI...

CMOS VLSI Design - Lecture 6: Power potx

... activity factor– Depends on design, but typically α ≈ 0.1CMOS VLSI DesignCMOS VLSI Design 4th Ed.7: Power 15Switching ProbabilityCMOS VLSI DesignCMOS VLSI Design 4th Ed.7: Power 16Example ... VDDCMOS VLSI DesignCMOS VLSI Design 4th Ed.7: Power 27NAND3 Leakage Example 100 nm processIgn= 6.3 nA Igp= 0Ioffn= 5.63 nA Ioffp= 9.3 nAData from [Lee03]CMOS VLSI DesignCMOS VLSI Design ... circuit sleeps long enoughCMOS VLSI DesignCMOS VLSI Design 4th Ed.7: Power 2Outline Power and Energy Dynamic Power Static PowerCMOS VLSI DesignCMOS VLSI Design 4th Ed.7: Power 3Power...

matlab lecture notes

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Lecture Notes: Introduction to Finite Element Method (Chapter 2)

... Lecture Notes: Introduction to Finite Element Method Chapter 1. Introduction© 1998 Yijun Liu, University ... : (3)A is called a n×n (square) matrix, and x and b are (column)vectors of dimension n. Lecture Notes: Introduction to Finite Element Method Chapter 1. Introduction© 1998 Yijun Liu, University ... 2, , l; j = 1, 2, , n.Note that, in general, AB BA≠, but ( ) ( )AB C A BC=(associative). Lecture Notes: Introduction to Finite Element Method Chapter 1. Introduction© 1998 Yijun Liu, University...

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