vlsi design course lecture notes ch6

... on x n k . So eventually B(x n k , 1 n k ) is inside G i 0 , contradictory to 18 Topology Course Lecture Notes Aisling McCluskey and Brian McMaster August 1997 their choice! (More rigorously, there ... sequence is just a function having the positive integers as do- main. The set of positive integers, of course, possesses a particularly simple ordering; there is a first member, second me...

Ngày tải lên: 31/03/2014, 16:27

... KHOA KHOA ĐIỆN-ĐIỆN TỬ BỘ MÔN KỸ THUẬT ĐIỆN TỬ 1 1 VLSI DESIGN Thiết kế vi mạch số Chapter 0: Course Introduction Bộ môn Kỹ Thuật Điện Tử Course Information • Instructor – Truong Quang Vinh, ... http://www4.hcmut.edu.vn/~tqvinh – Office: 116B1, IC Design Lab, Monday 9-11am 2 Bộ môn Kỹ Thuật Điện Tử Textbooks 1. Neil Weste and David Harris, CMOS VLSI Design A Circuits and System...

Ngày tải lên: 10/03/2014, 08:20

... 1 s d g s d s d s d nMOS pMOS OFF ON ON OFF CMOS VLSI Design 4th Ed. 0: Introduction 12 0 V DD A Y GND CMOS Inverter A Y 0 1 1 0 A Y OFF ON 1 ON OFF CMOS VLSI Design 4th Ed. 0: Introduction 13 CMOS ... OFF ON OFF 1 0 ON ON OFF OFF 0 0 A B Y CMOS VLSI Design 4th Ed. 0: Introduction 14 CMOS NOR Gate A B Y 0 0 1 0 1 0 1 0 0 1 1 0 A B Y CMOS VLSI Design 4th Ed. 0: Introducti...

Ngày tải lên: 19/03/2014, 10:20

... CMOS VLSI Design 4th Ed. 1: Circuits & Layout 10 And Now… CMOS VLSI Design 4th Ed. 1: Circuits & Layout 11 Feature Size  Minimum feature size shrinking 30% every 2-3 years CMOS VLSI Design ... frequency, processor performance CMOS VLSI Design 4th Ed. 1: Circuits & Layout 13 CMOS Gate Design  Activity: – Sketch a 4-input CMOS NOR gate A B C D Y CMOS VLSI D...

Ngày tải lên: 19/03/2014, 10:20

... Saturation V g V s V d V gd V gs V ds + - + - + - CMOS VLSI DesignCMOS VLSI Design 4th Ed. 3: CMOS Transistor Theory 6 nMOS Cutoff  No channel  I ds ≈ 0 + - V gs = 0 n+ n+ + - V gd p-type body b g s d CMOS VLSI DesignCMOS VLSI Design 4th ... C g for contacted diff – ½ C g for uncontacted – Varies with process Lecture 3: CMOS Transistor Theory CMOS VLSI DesignCMOS VLSI...

Ngày tải lên: 19/03/2014, 10:20

... ox 2q 2q A A N t N C ε γε ε = = CMOS VLSI DesignCMOS VLSI Design 4th Ed. 4: Nonideal Transistor Theory 16 Body Effect Cont.  For small source-to-body voltage, treat as linear CMOS VLSI DesignCMOS VLSI Design 4th Ed. 4: ... L CMOS VLSI DesignCMOS VLSI Design 4th Ed. 4: Nonideal Transistor Theory 19 Leakage  What about current in cutoff?  Simulated results  What differs...

Ngày tải lên: 19/03/2014, 10:20

... inverter C C R 2C 2C R 2 1 A Y C 2C C 2C C 2C R Y 2 1 d = 6RC CMOS VLSI DesignCMOS VLSI Design 4th Ed. 5: DC and Transient Response 28 Delay Model Comparison CMOS VLSI DesignCMOS VLSI Design 4th Ed. 5: DC and Transient Response ... −     V out (t) V in (t) t 0 t V in (t) V out (t) C load I dsn (t) Lecture 5: DC & Transient Response CMOS VLSI DesignCMOS VLSI D...

Ngày tải lên: 19/03/2014, 10:20

... activity factor – Depends on design, but typically α ≈ 0.1 CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 15 Switching Probability CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 16 Example  ... V DD CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 27 NAND3 Leakage Example  100 nm process I gn = 6.3 nA I gp = 0 I offn = 5.63 nA I offp = 9.3 nA Data from [Lee03]...

Ngày tải lên: 19/03/2014, 10:20

Ngày tải lên: 21/09/2013, 16:27

... Lecture Notes: Introduction to Finite Element Method Chapter 1. Introduction © 1998 Yijun Liu, University ... : (3) A is called a n×n (square) matrix, and x and b are (column) vectors of dimension n. Lecture Notes: Introduction to Finite Element Method Chapter 1. Introduction © 1998 Yijun Liu, University ... 2, , l; j = 1, 2, , n. Note that, in general, AB BA≠ , but ( ) ( )AB C A BC=...

Ngày tải lên: 17/10/2013, 11:15