semiconductor thick and thin film microcircuits
MODERN ASPECTS OF BULK CRYSTAL AND THIN FILM PREPARATION_2 pot
Ngày tải lên :
29/06/2014, 09:20
... coefficient () and the film thickness can be obtained If the thickness of the film is uniform, interference effects between substrate and film (because of multiple reflexions from the substrate /film interface) ... of the thin film In order to generate the new piezoelectric thin film, a crystal growth process of the thin film should be predicted accurately The stable crystal cluster of the thin film, which ... homogeneity and porosity of deposited films As the physics behind the sputtering process and plasma formation is not simple, and many basic and technological aspects of the sputtering process and AlN film...
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MODERN ASPECTS OF BULK CRYSTAL AND THIN FILM PREPARATION docx
Ngày tải lên :
29/06/2014, 09:20
... Zhmakin and Yu.N Makarov Chapter 11 Crystal Growth and Stoichiometry of Strongly Correlated Intermetallic Cerium Compounds 263 Andrey Prokofiev and Silke Paschen Part 213 Growth of Thin Films and ... Controlled Growth of C-Oriented AlN Thin Films: Experimental Deposition and Characterization 287 Manuel García-Méndez Chapter 13 Three-Scale Structure Analysis Code and Thin Film Generation of a New Biocompatible ... chapters on growth of thin films and low-dimensional structures, covering topics on AlN thin films, influence of the substrate temperature on the properties of semiconducting films, ZnO mesostructures...
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Numerical quantum modeling of field effect transistor with sub 10nm thin film semiconductor layer as active channel physical limits and engineering challenges
Ngày tải lên :
13/09/2015, 21:19
... calculations and the cases where the effective mass approximation will fail 34 2.2 An Analysis of Subband Structure and Electrostatics of TwoDimensional Electron Gas in Thin Film Silicon and Germanium Semiconductor ... 3.2 91 91 Discussion on Theory and Methodology for Calculation of Electron and Hole Mobilities in Si and Ge Thin Film Semiconductors 3.2.1 3.3 92 Fundamentals ... sufficiency of a six-band Hamiltonian [Luttinger55] approach Fig shows the comparison of hole subband structure calculated with an eight-band and six-band ˙ Hamiltonian for a Si and Ge quantum well...
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Tài liệu Báo cáo " Survey of WO3 thin film structure built on ito/glass substrates by the Raman and xrd spectroscopies" doc
Ngày tải lên :
13/02/2014, 03:20
... WO3 thin films on ITO layers with thickness, altering from 150 to 250nm Figure shows XRD and Raman spectra of WO3 powder sample and WO3 films, deposited on ITO layers/150 nm, 200 nm and 250 nm thickness ... difference in structure between WO3 films and WO3 powder sample and between one film to another These numbers show no difference in structure between WO3 powder and WO3 films However, we could not eliminate ... LeGore, R.J Lad, Thin solid films 400 (2001) 56 Huiyao Wang, Pei Xu, Tianmin Wang, Thin solid films 388 (2001) 68 Christian Salinga, Hansjörg Weis, Matthias Wuttig, Thin solid films 414 (2002)...
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wo3 thin film sensor prepared by sol–gel technique and its low-temperature sensing properties to trimethylamine
Ngày tải lên :
20/03/2014, 13:12
... 4f5/2 and W 4f7/2 are found to lie at 37.1 and 35.20 eV, respectively and are contributed to lattice tungsten in the WO3 crystal 3.2 Gas sensing properties of the thin film sensors Results and discussion ... sensitivity and TMA concentration at 70◦ C NH3 , gasoline, C2 H5 OH, CH4 and CO at the same concentration of 1000 ppm and to water vapor These experimental results indicate that the WO3 thin film ... NH3 , gasoline, C2 H5 OH, CH4 and CO and water vapor These results indicate that the WO3 thin film sensor prepared by a sol–gel Fig X-ray photoelectron spectra of the thin film annealed at 500◦ C...
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Báo cáo hóa học: " Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin film" pdf
Ngày tải lên :
21/06/2014, 05:20
... study through the Nanoscience and Nanotechnology program (DAPHNES project ANR-08-NANO-005) Authors’ contributions OD fabricated the thin films and carried out the optical and microstructural characterizations ... Nd concentrations of 0.08 and 0.27 at.%, and then, it progressively increases with increasing Nd content This demonstrates that the incorporation of Nd in the thin films generates disorder in ... Nddoped sample as-deposited and a fit with eight Gaussian peaks Several bands characteristic of amorphous SiO2 are observed The two prominent bands at 1236 (red), and 1052 cm-1 (blue) are assigned...
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báo cáo hóa học:" Structural and optical properties of a radio frequency magnetron-sputtered ZnO thin film with different growth angles" pdf
Ngày tải lên :
21/06/2014, 17:20
... images of ZnO films with various growth angles ZnO films at (a-1) 0°, (b-1) 15°, and (c-1) 30° growth angles and their enlarged images (a-2, b-2, and c-2) Figure shows the XRD patterns and grain ... columnar ZnO film Columnar ZnO films with angles of 15° and 30° are shown in Figure 2b-1, c-1 To get a magnified view of the cross-section of the films, we enlarged the boxed section of the films, ... optical properties The thickness of the ZnO thin films was checked by FE-SEM and was fixed at 100 nm Three growth angles (0°, 15°, and 30°) of the columnar ZnO films were carefully selected The intensities...
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Reliability and aging mechanisms of all solid state thin film lithium ion microbatteries
Ngày tải lên :
09/09/2015, 10:14
... 8.9 (a) Schematic of electronic band structure of TiO2 semiconductor; (b) Schematic energy band diagrams for single layer TiO2; and (c) TiO2 thin film anode within the battery (Ev: vacuum level; ... thin film electrode is very crucial to maintain both structural integrity and electrochemical cycling performance, small-scale thin film lithium ion batteries must have better understanding and ... 50 cycled; and (d) 100 cycled RuO2 thin film anodes Fig 5.8 (a) FESEM plan view and (b) FIB cross-sectional view images of indentation induced interfacial crack pattern in RuO2 thin film anode...
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Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells
Ngày tải lên :
09/09/2015, 11:15
... of a 40 nm thick p-doped silicon thin film on a glass substrate 55 Figure 3.14 Impact of PH3 flow on film crystallinity and conductivity of a 40 nm thick n-doped silicon thin film on a ... silicon thin films generally have different bandgaps and Fermi levels compared to their crystalline counterpart, the conduction / valence band offsets of the doped and intrinsic silicon thin films ... silicon thin film to passivate dangling bonds [48] To obtain high-quality hydrogenated silicon thin films, there is a need to understand and control the plasma physics and chemistry to obtain films...
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Interface studies for microcrystalline silicon thin film solar cells deposited on TCO coated planar and textured glass superstrates
Ngày tải lên :
09/09/2015, 11:16
... of thin- film PV modules Current status of thin- film PV development Although currently the solar cell efficiency of thin- film technologies still lags behind wafer based c-Si technology, thin- film ... doped thin- film silicon films, i.e doped a-Si:H and doped µc-Si:H, are very defective and cannot be used as an absorber layer for thin- film solar cells Hence, un-doped (so called intrinsic) films ... interface of thin- film µc-Si:H solar cells on the solar cell performance 73 5.1 Requirements for the buffer layers 73 5.2 Modelling of silicon thin- film layers and of a reference thin- film µc-Si:H...
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Development of smoothed numerical methods for fracture analyses and interfacial toughness characterization in thin film systems
Ngày tải lên :
10/09/2015, 08:26
... of thin films as integral component of the engineering systems [8, 9] The failure modes of thin film systems were studied earlier by Hutchinson and Suo [10], and further extended by Chen and ... of smoothing domains Figure 5.5 Partition of tip smoothing domains (sd) in the ESm-XFEM Note that sub-sds and sub-cells not carry any degrees of freedom and are solely used for smoothing and numerical ... normalized indentation depth for the thin films with different film thicknesses Figure 6.12 The curvature of crack front versus ratio of wedge tip length to film thickness Figure 6.13 Comparison...
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Development and fabrication of thin film composite (TFC) membranes for engineered osmosis processes
Ngày tải lên :
10/09/2015, 09:02
... (A and B) of TFC and TFC200 and TFC600 membranes All tests were done at 1-4 bar using a 200 ppm NaCl solution and a membrane area of 19.5 cm2 188 Figure 8.12 Water permeation flux and ... solution, and river water and waste water brine was feed solutions 223 xxi CHAPTER INTRODUCTION AND BACKGROUND 1.1 Water and Energy Crisis Nowadays, inadequate access to water and energy ... consumption and depletion in their reserves Population growth and the expansion of urban & industrial areas and the increase of living standards further stress the problems of water and energy...
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Post crystallisation treatment and characterisation of polycrystalline silicon thin film solar cells on glass
Ngày tải lên :
10/09/2015, 09:23
... of a metallised poly-Si thin- film solar cell on glass 89 Figure 5.17 Comparison between measured and simulated reflectance, EQE and IQE results of a planar poly-Si thin- film solar cell on glass ... challenges facing poly-Si thin- film solar cells In Chapter 2, the background on poly-Si thin- film solar cells is discussed in some detail Various approaches to fabricate poly-Si thin- film solar cells ... 81 v 5.3.4 Mobility and sheet resistances results 82 5.3.5 Discussion 84 5.4 Modelling and Simulation of Poly-Si Thin- film Solar Cells 86 5.4.1 Measurement and Simulation Details...
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Mechanism and characteristics of photovoltaic responses in sandwiched ferroelectric plzt thin film devices
Ngày tải lên :
14/09/2015, 08:42
... [63, 64] ii) Thickness/size effect in ferroelectric thin films The thickness/size effect in the ferroelectric films has been investigated theoretically and experimentally at very thin thickness ... outputs in PLZT ferroelectric thin films with different film thicknesses and electrode materials, and they should provide useful information for the choice of film dimension and/ or electrodes in the ... of εe1 and εe2 on the magnitude of peak photocurrent Jsc in PLZT thin films; (b) Simulation results of the effect of εe1 and εe2 on the thickness of peak photocurrent Lpeak in PLZT thin films...
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High depth resolution rutherford backscattering spectrometry with a magnet spectrometer implementation and application to thin film analysis 2
Ngày tải lên :
14/09/2015, 08:44
... approximately 2.5 to times that of air, and serves to prevent corona buildup and tank sparks Other forms of electrical insulation are the vacuum and glass insulation within the accelerator tube, the plastic ... used within the Singletron as a heavy duty profile source for proton, alpha and oxygen beams The neutral gas is released into the ion source, where an RF voltage is applied Electrons within the ... and a variety of insulating cable covers Also, electron suppression is employed via small permanent magnets within the accelerator to reduce the level of emitted radiation 3.3 Beam steering and...
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High depth resolution rutherford backscattering spectrometry with a magnet spectrometer implementation and application to thin film analysis 3
Ngày tải lên :
14/09/2015, 08:44
... towards the left and right ends of the FPD respectively The charges collected QL and QR are measured at the left and right ends of the FPD respectively over the same time interval t and are compared ... controls φ Motor the sample orientation within the main chamber It allows for translation in the x, y θ Motor and z axes, as well as rotation about the θ and φ axes (Fig 3.9) The translation resolution ... The charge pulses QL and QR are each processed first by ORTEC 113 Pre-amplifier and then by ORTEC 571 Amplifier The resultant pulses were then added using ORTEC 533 Dual Sum and Invert card A Seiko...
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High depth resolution rutherford backscattering spectrometry with a magnet spectrometer implementation and application to thin film analysis 4
Ngày tải lên :
14/09/2015, 08:44
... Pxt , Pyt ) and Pb ( Pxb , Pyb ) of the top and bottom envelopes with the entrance edge Trajectories within magnet Circles are drawn within the magnet as trajectories for the top and bottom envelopes ... Solving the top and bottom trajectories with the above exit edge equation yields the respective exit points Qt ( Qxt , Qyt ) and Qb ( Qxb , Qyb ) The gradients Gt and Gb of the top and bottom exit ... developed to obtain the exit parameters x and θ for every set of entrance parameters x0 and θ The effects of rotated (flat) entrance and exit edges by angles β1 and β respectively were incorporated...
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High depth resolution rutherford backscattering spectrometry with a magnet spectrometer implementation and application to thin film analysis 1
Ngày tải lên :
14/09/2015, 08:44
... section 2.3.2 Thin film systems For thin films deposited on thick substrates, we are mainly interested in the stoichiometry and depth profile of heavy elements within the thin oxide films at the ... lattice energy and band gap among the lanthanide oxides, and is therefore expected to show higher thermal stability and hygroscopic immunity In last part of this thesis, ultra -thin Lu2O3/Si films under ... SiOxNy and Hf-based films will have to be used Lanthanide (Rare-Earth)-based films are one of the candidates for high-k replacements as they have large band gaps, high dielectric constants and low...
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Design and fabrication of ferroelectric thin film based microwave miniature tunable devices
Ngày tải lên :
04/10/2015, 10:26
... Ba 0.5 Sr0.5TiO thin film and 5Hz, 1.0 J / cm for Bi1.5 Zn1.0 Nb1.5 O7 thin film The substrate temperatures for Ba 0.5 Sr0.5TiO and Bi1.5 Zn1.0 Nb1.5 O7 thin films are 700°C and 650°C when deposition ... thin film as alternative tuning material is performed Thin films are deposited on platinum coated silicon (Pt/Si) and single crystal LAO, respectively Crystallization and morphology of thin films ... between the top and bottom electrodes and across the thickness of the ferroelectric thin film Ferroelectric thin films for microwave tunable components applications generally have a thickness less...
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Design, construction and testing of an i v tester for thin film solar cells and mini modules
Ngày tải lên :
04/10/2015, 15:45
... highly versatile and powerful current-voltage (I-V) tester for thin- film solar cells and modules was designed, constructed, and thoroughly tested The I-V tester is able to measure thin- film modules ... tester for its thin- film solar cells and modules, but such a system is not commercially available yet In this project, a cost-effective but highly versatile and powerful I-V tester, thin- film Sunalyzer ... T-SUNALYZER, for thin- film solar cells and modules is designed, constructed, and thoroughly tested 1.2 Aim of the project and thesis The main objective of the T-Sunalyzer is to measure and analyze...
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