low power vlsi design ppt pdf

Ngày tải lên: 23/06/2014, 01:20

... with low concentration of spin labels should be detected. At low concentration of spin labels where high receiver gain is required to obtain a spectrum of good quality, it is difficult to follow ... that at low microwave power the variance of the EPR signal would be minimum over the whole field scan at the out-of-phase setting, the correct phase angle can be calculated from two high -power spectra ... nucleotide reported disorder. The low- angle X-ray diffraction patterns were modified by AdoPP[CH 2 ]P in insect flight muscle; the ratio of the two inner equatorial peaks was lowered when the concentration...

Ngày tải lên: 24/03/2014, 03:21

... SOLUTIONS 9 4.11 D = N(GH) 1/N + P. Compare in a spreadsheet. Design (b) is fastest for H = 1 or 5. Design (d) is fastest for H = 20 because it has a lower logical effort and more stages to drive the ... of the internal nodes is guaranteed to be high rather than low. Thus 11 + 2.5 = 13.5 units of capcitance are high and 5 units are low, reducing the charge sharing noise to 13.5 / (13.5 + 5) ... 40960. The best number of stages is log 4 F = 7.66, so try an 8-stage design: NAND3-INV-NAND2- INV-NAND2-INV-INV-INV. This design has an actual logical effort of G = (5/3) * (4/3) * (4/3) = 2.96,...

Ngày tải lên: 19/02/2014, 15:20

... oxide n well n+n+ n+ p+p+p+ Contact CMOS VLSI Design 4th Ed. 0: Introduction 40 Simplified Design Rules  Conservative rules to get you started CMOS VLSI Design 4th Ed. 0: Introduction 6 nMOS ... CMOS VLSI Design 4th Ed. 0: Introduction 31 Polysilicon Patterning  Use same lithography process to pattern polysilicon Polysilicon p substrate Thin gate oxide Polysilicon n well CMOS VLSI Design ... substrate CMOS VLSI Design 4th Ed. 0: Introduction 23 Oxidation  Grow SiO 2 on top of Si wafer – 900 – 1200 C with H 2 O or O 2 in oxidation furnace p substrate SiO 2 CMOS VLSI Design 4th Ed. 0:...

Ngày tải lên: 19/03/2014, 10:20

... short – V t : low – t ox : thin  Slow (S): opposite  Not all parameters are independent for nMOS and pMOS nMOS pMOS fastslow slow fast TT FF SS FS SF CMOS VLSI DesignCMOS VLSI Design 4th Ed. 4: ... CMOS VLSI DesignCMOS VLSI Design 4th Ed. 4: Nonideal Transistor Theory 8 Mobility Degradation  High E vert effectively reduces mobility – Collisions with oxide interface CMOS VLSI DesignCMOS VLSI ... processes (t ox > 20 Å)  Critically important at 65 nm and below (t ox ≈ 10.5 Å) From [Song01] CMOS VLSI DesignCMOS VLSI Design 4th Ed. 4: Nonideal Transistor Theory 5 ON and OFF Current ...

Ngày tải lên: 19/03/2014, 10:20

... in active mode CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 2 Outline  Power and Energy  Dynamic Power  Static Power CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 19 Voltage / Frequency  ... block will be used Lecture 6: Power CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 15 Switching Probability CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 16 Example  A 4-input AND ... CMOS VLSI DesignCMOS VLSI Design 4th Ed. 7: Power 3 Power and Energy  Power is drawn from a voltage source attached to the V DD pin(s) of a chip.  Instantaneous Power:  Energy:  Average Power: ()...

Ngày tải lên: 19/03/2014, 10:20

... each VP rule which introduces a VP complement, allowing the verb to be lowered onto the complement. As this rule must also expand VPs with verbs lowered onto them, we want e.g. cii) vPlz -> ... (I) will apply to all three of (B) - (D), allowing compound verbs to be discharged at any point. (II) will apply to (B) and (C), allowing the lowering (with compounding if needed) of verbs ... Even in the weakest augmentation, allowing only one occurence of one variable over sequences in any constituent of any rule, the apparent similarity of their power remains to be formally established,...

Ngày tải lên: 24/03/2014, 01:21

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Ngày tải lên: 21/06/2014, 00:20

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Ngày tải lên: 22/06/2014, 19:20

Ngày tải lên: 01/07/2014, 11:20

Ngày tải lên: 28/08/2014, 02:29

... đó có design pattern. Design pattern được vận dụng linh hoạt và dưới nhiều hình thức khác nhau.Trong nội dung đồ án môn học này chúng tôi xin trình bày một vài ứng dụng điển hình của Design ... b.Sơ đồ UML 15 B. Hệ thống các mẫu design pattern. I. Hệ thống các mẫu Hệ thống các mẫu design pattern hiện có 23 mẫu được định nghĩa trong cuốn Design patterns Elements of Reusable Object ... trong framework được cài đặt và thiết lập các mối quan hệ theo các mẫu design pattern. 50 Mối quan hệ giữa các Pattern Design pattern không phải là một phần của UML cốt lõi,nhưng nó lại...

Ngày tải lên: 24/08/2012, 13:53

... obtain large variable gain ranges under low supply voltage. II.2 Comparison of the commonly used VGA structures The design requirements impose challenges on low power consumption, very large bandwidth, ... suitable for low power applications. (3) Summary of analog-multiplier-based VGA In summary, the multiplier-based VGA has good linearity and large gain tuning range, but it is not power efficient ... generated by the subtraction between g mp1 and g mp2 . And hence, it is not suitable for low- power VGA design. II.1.3 Differential pair with source degeneration Another commonly used VGA topology...

Ngày tải lên: 06/11/2012, 10:26

Ngày tải lên: 05/09/2013, 15:28

Ngày tải lên: 05/09/2013, 16:10

Ngày tải lên: 09/12/2013, 19:15

... 38 Activity 5.4: Logical Design Verification Exercise 1: Refining and Verifying the Business Object Model ! Refine ... the previous activities. 2. As a class, brainstorm methods of verifying and refining the logical design. The instructor will write your answers on a flip chart. ...

Ngày tải lên: 10/12/2013, 16:16

... of Skipping Physical Design In this activity, you will participate in a class discussion to identify the risks of not completing a physical design in the process of designing a business solution. ... completing this lab, you will be able to: ! Articulate the value of physical design and the risks of not completing a physical design. Before You Begin This activity is a class discussion. Prerequisites...

Ngày tải lên: 10/12/2013, 16:16