Bài viết tìm hiểu việc tổng hợp dây nano silic bằng phương pháp bốc bay nhiệt, cấu trúc của chúng và sự liên quan của cấu trúc này đến việc phát huỳnh quang của dây Si đo ở nhiệt độ phòng.
063-067 1,2,* 1 1, 1 -6- 1100 -12-2016 :C K SiNWs T : ; Abstract Silicon nanowires (SiNWs) were synthesized on Si (111) surfaces using the vapor liquid solid technique at high temperature ranging from 1100 0C to 1200 0C Si:C mixture powders were used as the material sources Scanning electron microscope images were revealed that the Si nanowires had few tens nanometer of diameter The Si-core/SiOx-shell structure of the nanowires was investigated via transmission electron microscopy The photoluminescence of the nanowires at room temperature demonstrated a quantum confinement effect because of the reduced diameter of the nanowires Keywords: SiNWs, thermal evaporation method, core/shell structure; * * : Tel: 0962490411; Email: thuyiop@gmail.com; lam.nguyenhuu@hust.edu.vn 063-067 -6 0 0 0 0 0 063-067 x 0 x 2 2 x x 1-x x x x 063-067 x [1] Y Wan, J Sha, B Chen, Y Fang, Z Wang, and Y Recent Pat Nanotechnol., vol 3, no 1, pp 9, Jan 2009 [2] S Chen, A van den Berg, and E T Carlen, nalysis of silicon Sensors Actuators B Chem., vol 209, pp 486 489, 2015 [3] C H Peters, a R Guichard, a C Hryciw, M L nanowire solar cells with photon-harvesti Appl Phys., vol 105, no 12, p 124509, 2009 x J [4] C K Chan, H Peng, G Liu, K McIlwrath, X F -performance Nat Nanotechnol., vol 3, no 1, pp 31 5, Jan 2008 [5] D W Kwak, H Y Cho, and W.-C Yang, synthesized by Au Si island-catalyzed chemical vapor Phys E Low-dimensional Syst Nanostructures, vol 37, no 2, pp 153 157, Mar 2007 [6] X T Zhou, J Q Hu, C P Li, D D D Ma, C S Lee, Chem Phys Lett., vol 369, no 2, pp 220 224, Feb 2003 d C [7] Fei Zhao, Dan-dan Zhao, Shao-long Wu, Guo-an Cheng and Rui-ting Zheng abrication and Electron Field Emission of Silicon Nanowires Synthesized by J Korean Phys Soc., vol 55, no 61, p 2681, Dec 2009 x [8] in the fabrication of silicon nanowire array Nanotechnology, vol 17, no 15, pp 3768 3774, 2006 [9] and photoluminescence property of silicon carbon nanowires synthesized by the thermal evaporation Phys E Low-dimensional Syst Nanostructures, vol 41, no 4, pp 655 659, Feb 2009 063-067 [10] G Gundiah, F L Deepak, a Govindaraj, and C N R Chem Phys Lett., vol 381, no 6, pp 579 583, Nov 2003 and c Phys Lett., vol 81, no 15, p 2866, 2002 [16] [11] T Nguyen, T T Nguyen, A X Vuong, L D Mai, T H Nguyen, C D Nguyen, and L H Nguyen, Phys Status Solidi Appl Mater Sci., vol 210, no 7, pp 1429 1432, 2013 [12] Z W Pan, Z R Dai, L Xu, S T Lee, and Z L -Controlled Growth of SiliconBased Nanostructures by Thermal Evaporation of SiO J Phys Chem B, vol 105, no 13, pp 2507 2514, 2001 [13] M Lajvardi, H Eshghi, M E Ghazi, M Izadifard, and a Goodarzi silicon nanowires synthesized by Ag-assisted chemical Mater Sci Semicond Process., vol 40, pp 556 563, 2015 [14] A Kramer, T Boeck, P Schramm, and R Fornari, s for the growth Phys E Lowdimensional Syst Nanostructures, vol 40, no 7, pp 2462 2467, May 2008 [15] R J Barsotti, J E Fischer, C H Lee, J Mahmood, C Appl -dimensional properties of semiconductor microcrystallites ( zerodimensional systems ) and some quasi-twoAdv Phys., vol 51, no January 2015, pp 799 890, 2002 [17] G Belomoin, J Therrien, A Smith, S Rao, R Twesten, S Chaieb, M H Nayfeh, L Wagner, and L family of Appl Phys Lett., vol 80, no 5, pp 841 843, 2002 [18] J A Rodríguez and M AcevesMechanisms of Si Nanocrystals and Defects in SiO J Nanomater., vol 2014, pp 17, 2014 [19] band structure of highPhys status solidi, vol 242, no 12, pp 2474 2479, Oct 2005 [20] G Ledoux, J Gong, F Huisken, O Guillois and C Reynaud, "Photoluminescence of size-separated silicon nanocrystals: confirmation of quantum confinement", Appl Phys Lett., vol 80, pp 48344836, 2002 ... abrication and Electron Field Emission of Silicon Nanowires Synthesized by J Korean Phys Soc., vol 55, no 61, p 2681, Dec 2009 x [8] in the fabrication of silicon nanowire array Nanotechnology,... Growth of SiliconBased Nanostructures by Thermal Evaporation of SiO J Phys Chem B, vol 105, no 13, pp 2507 2514, 2001 [13] M Lajvardi, H Eshghi, M E Ghazi, M Izadifard, and a Goodarzi silicon nanowires... nanowire array Nanotechnology, vol 17, no 15, pp 3768 3774, 2006 [9] and photoluminescence property of silicon carbon nanowires synthesized by the thermal evaporation Phys E Low-dimensional Syst Nanostructures,