Static and dynamic characteristics of lg 50nm inaln aln gan hemt with algan back barrier for high power millimetre wave applications

Accepted Manuscript STATIC AND DYNAMIC CHARACTERISTICS OF Lg 50 nm InAlN/AlN/GaN HEMT WITH AlGaN BACK-BARRIER FOR HIGH POWER MILLIMETRE WAVE APPLICATIONS P Murugapandiyan, Assistant Professor, S Ravimaran, Professor, J William, Professor PII: S2468-2179(17)30006-0 DOI: 10.1016/j.jsamd.2017.08.004 Reference: JSAMD 118 To appear in: Journal of Science: Advanced Materials and Devices Received Date: 21 January 2017 Revised Date: 21 July 2017 Accepted Date: August 2017 Please cite this article as: P Murugapandiyan, S Ravimaran, J William, STATIC AND DYNAMIC CHARACTERISTICS OF Lg 50 nm InAlN/AlN/GaN HEMT WITH AlGaN BACK-BARRIER FOR HIGH POWER MILLIMETRE WAVE APPLICATIONS, Journal of Science: Advanced Materials and Devices (2017), doi: 10.1016/j.jsamd.2017.08.004 This is a PDF file of an unedited manuscript that has been accepted for publication As a service to our customers we are providing this early version of the manuscript The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain ACCEPTED MANUSCRIPT STATIC AND DYNAMIC CHARACTERISTICS OF Lg 50nm InAlN/AlN/GaN HEMT WITH AlGaN BACK-BARRIER FOR HIGH POWER MILLIMETRE WAVE APPLICATIONS P.Murugapandiyan1, S.Ravimaran2, J.William3 Assistant Professor, Department of Electronics and Communication Engineering, Agnel Institute of Technology and Design, Goa-India RI PT Professor, Department of Electrical and Computer Science, M.A.M College of Engineering, Trichy,Tamilnadu, Professor, Department of Electronics and Communication Engineering, M.A.M College of Engineering and Technology, Trichy,Tamilnadu, India SC M AN U Email: murugavlsi@gmail.com TE D Authors AC C EP P.Murugapandiyan has received his B.E in Electronics and Communication Engineering from Anna University , Chennai, Tamil Nadu, India in 2008 and he received Master of Engineering in VLSI Design from Anna University, Chennai, Tamil Nadu, India in the year 2013 He is pursuing Ph.D at Anna University, Chennai, Tamilnadu- India Now he is working as Assistant Professor in the Department of Electronics and Communication Engineering, Agnel Institute of Technology and Design, Goa-India His research focuses on modelling and simulation of III–N compound semiconductor materials and devices for future high speed with high power MMIC applications Dr.S.Ravimaran , Principal and Professor in Computer Science and Electrical Engineering department of the M.A.M College of Engineering, Tamil Nadu,India and he has received his B.E in computer science and engineering from National Institute of Technology, Tiruchirapalli, India in 1997 and his M.E Computer science and engineering from Anna ACCEPTED MANUSCRIPT RI PT University, Chennai, Tamil Nadu, India in 2004 He has done his Ph.D in Data and Transaction Management Using Surrogate Objects in Distributed Mobile Systems fromAnna University Chennai, India in 2013 His research interests are High speed wireless Communication Networks and wide band attenna design for MMIC RF applications AC C EP TE D M AN U SC Dr.J.William, Principal and Professor in Electronics and Communication Engineering department of the M.A.M College of Engineering and Technology, Tamil Nadu-India and he has received Doctor of Philosophy in the area of ULTRA WIDEBAND ANTENNA, Pondicherry Central University, Pudhucherry, India, in the year 2011 and Master of Technology with the specialization of Communication Systems at NIT, Trichy in the year 2006 His research interests are GaN based High power amplifier and oscillator design for milli meter wave high power applications ACCEPTED MANUSCRIPT STATIC AND DYNAMIC CHARACTERISTICS OF Lg 50 nm InAlN/AlN/GaN HEMT WITH AlGaN BACK-BARRIER FOR HIGH POWER MILLIMETRE WAVE APPLICATIONS RI PT Abstract M AN U SC In this paper, a novel 50 nm recessed T-gate AlN spacer based InAlN/GaN HEMT with AlGaN back-barrier is designed The static and dynamic characteristics of the proposed device structure are investigated using Synopsys TCAD tool The other device features are heavily doped source/drain region, Al2O3 passivated device surface which are helped the device to suppress the parasitic resistances and capacitances of the transistor for enhancing the microwave characteristics The proposed InAlN/GaN HEMT exhibits the sheet carrier density (ns) of 1.9x1013 cm-2, drain current density (Ids) of 2.1 A/mm, transconductance (gm) of 800 mS/mm, 40 V breakdown voltage (VBR), current gain cut-off frequency (ft) of 221 GHz and power gain cut-off frequency (fmax) of 290 GHz The superior static and dynamic characteristics of InAlN/GaN HEMT obtained, undoubtedly places the device at the forefront for high power millimetre wave applications Keywords 1.Introduction TE D HEMT, 2DEG, static and dynamic characteristics, cut-off frequency, back-barrier AC C EP Recently the lattice matched InAlN/GaN heterojunction high electron mobility transistors (HEMTS) are of great interest for high power switching and RF applications because of their high breakdown voltage, high current density and thermal stability The limitations of AlGaN/GaN HEMT have been reached now in particular for the bottom part of the mm-wave spectrum (30-300 GHz) Furthermore the unavoidable strain caused by the lattice mismatch between GaN and AlGaN limits the Al contents of the barrier to about 30% and therefore the 2DEG density to ~1013 cm-2 As a consequence, the maximum current density is limited to A/mm The presence of strain has been identified as a source of failure for these devices (5, 6) Lattice matched InAlN/GaN HEMTs presents several advantages with respect to AlGaN/GaN They allow for a more efficient downscaling of the transistor dimensions, making easier to achieve the cut-off frequencies (ft and fmax) more than 200 GHz (8) InAlN/GaN HEMT have been shown to produce the current density of A/mm (9) Therefore InAlN/GaN based HEMTs are ideal candidates for high power RF applications particularly in the millimeter range frequencies Besides the remarkable potential for high power and high frequency applications, InalN/GaN HEMT has also demonstrated for good thermal stability at 1000ºC (11) However, despite the great potentials of the InAlN/GaN ACCEPTED MANUSCRIPT RI PT HEMTs, are suffering from leakage currents and consequently low breakdown voltages reported (12), as well as strong short channel effects (13) The ohmic contacts were characterized to reduce the contact resistance of ~0.3 Ω.mm (13).Devices for high temperature operation on the other hand from high buffer leakage which strongly degrades the operating temperature of HEMT InAlN/GaN HEMTs Provide a better carrier confinement in the 2DEG than conventional AlGaN/GaN based HEMT due to larger spontaneous polarization between the barrier and channel (6) To reduce the alloy disorder scattering at the InalN/GaN interface, a very thin AlN spacer layer is placed between them which improves the 2DEG density M AN U SC In this work we have proposed a novel 50 nm recessed T-gate InAlN/GaN HEMT with AlGaN back-barrier The heavily doped source/drain region associated with Al2O3 passivated device surface reduces the parasitic capacitances (Cgd and Cgs) and T-gate structure provides low gate resistances (Rg) while maintaining large gate area (high mobility) A 1nm wide band gap (6.02 eV) AlN spacer layer along with AlGaN back-barrier provides the effective confinement of electrons in the 2DEG region Moreover, the buffer leakage current is mitigated by the back-barrier and the gate leakage current is majorly suppressed by AlN spacer layer The symmetric gate position and back-barrier are helped the device to achieve higher breakdown voltage, which is essential key factor for high power applications InAlN/GaN HEMT device structure and Band gap Diagram: AC C EP TE D The vertical cross section of InAlN/AlN/GaN/AlGaN HEMT device structure is depicted in Fig.1 The device consists of inch SiC substrate to achieve good thermal stability, 1450 nm Fe doped GaN buffer layer which isolate the channel from the substrate defects, 3.5 nm Al0.07Ga0.93N back-barrier layer which helps to confine the more electron in the channel due its effective conduction band notch at the interface with GaN channel and also it contributed for higher carrier mobility in the 2DEG (~1500 Cm2/V-s) Moreover, the buffer leakage current is effectively mitigated by the Al0.07Ga0.93N back-barrier The channel region is defined by 30 nm GaN and 10 nm In0.17Al0.83N is used as barrier layer A very thin nm AlN spacer layer is placed between the barrier and channel which improves the electron mobility in the 2DEG by reducing the interface roughness and alloy disorder scattering at the interface of InAlN/GaN The induced spontaneous and piezoelectric polarization electric field provides an improved sheet charge carrier density of 1.9x1013 cm-2 in the 2DEG and also due to the higher band gap of the barrier limits the gate leakage current and reduces the short channel effects in the device The source and drain regions are formed by heavily doped GaN (50 nm) with Si in the order of ~ 7x1020 cm-3 to minimize the contact resistances The source and drain ohmic contacts were designed by using Ti/Pt/Au metal stack and T-shaped recessed gate (6nm recess depth) is formed with the head size of 450 nm, stem height of 140 nm with 50 nm footprint is designed, which liftoff wide cross sectional gate area with smaller gate length and Schottky contact is formed by Ni/Pt/Au metal stack The reduction in the gate to drain space can causes the high electric field in the gate-source region which results in high Cgs and high drain conductance (gd) In this work, gate to source and the gate to drain ACCEPTED MANUSCRIPT M AN U SC RI PT distance are kept at 30 nm and 80 nm respectively to maintain a low electrostatic field in the gate-drain space channel region while maintaining enhanced breakdown voltage In order to reduce the parasitic capacitances of the device, finally the device surface is fully passivated by 10 nm Al2O3 layer which greatly helped for achieving higher cut-off frequencies Usually Si3N4 is the commonly used passivation layer to avoid the current collapses, but the larger thickness of passivation layer is needed, which will increases the gate capacitance particularly gate-drain capacitance (Cgd) In this model a 10 nm Al2O3 is used as passivation layer which assists to unfasten the dispersion effects and it provides a root to good transport property in the 2DEG AC C EP TE D Figure.1 Vertical Cross-sectional view of InAlN/AlN/GaN/AlGaN heterostructure Figure.2 (a) Polarization charge distribution (b) Energy band diagram of HEMT ACCEPTED MANUSCRIPT SC RI PT The Polarization charge distribution and conduction band offset diagram of InAlN/AlN/GaN/InGaN is depicted in Fig.2 (a) and (b) respectively The InAlN/GaN heterojunction benefits the high 2DEG density (~1013 cm-2) without doping and high electron mobility (~2000 cm2/V-s) because of the large conduction band discontinuity between the InAlN/GaN The high 2DEG density is achieved by the large spontaneous and piezoelectric polarization field inside the InAlN layer Due to induced piezoelectric polarization between AlGaN and GaN there will be a sharp raised potential barrier is formed at the back of 2DEG channel Such a sharp notch helps to confine the electron in better manner in the channel region and also it mitigates the buffer leakage current, which also contributed for improving the breakdown voltage of the transistor A very thin nm wide band gap (6.01 eV) AlN spacer is placed between barrier and channel to offer large effective conduction band offset and also it helps to reduce the gate leakage current Result and discussion M AN U In this article, we have proposed and investigated the static and dynamic characteristics of a novel 50 nm x 20 µm T-gate InAlN/GaN HEMT with AlGaN back-barrier Fig.3 depicts the sheet charge carrier density (ns) dependence on barrier thickness (tbarrier) for AlGaN/InAlN barrier materials A 10 nm InAlN barrier layer achieved a sheet carrier density of 1.9 x1013 cm-2 which is comparatively higher than with the AlGaN barrier layer and the measured mobility in the 2DEG is 1450 cm-2/V-s AC C EP TE D Fig.4 shows the V–I characteristics of Lg = 50 nm and W = 20 µm InAlN/AlN/GaN HEMT The simulation result gives a supreme current density of 2.1 A/mm at Vgs = 2V and the device is pinched off perfectly at Vgs = -2V This higher current density is achieved mainly because of the enhanced mobility with greater sheet charge carrier density in 2DEG channel The lattice-matched InAlN/GaN with nm SiN spacer provides effective conduction band offset and it reduces strain induced surface defects at the interface Moreover, the AlGaN notch helps to provide better confinement of charge carriers in the channel and also it suppressed the buffer leakage current in the device The device on resistance (Ron) is the source of power dissipation when the transistor working in linear region, the extracted very low Ron of the proposed device from the drain characteristics is 0.3 Ω.mm The breakdown voltage (VBR) of the device is the most essential parameter for high power RF applications A 40 V off-state breakdown voltage is obtained from the breakdown characteristics of the proposed HEMT which is depicted in Fig.5 ACCEPTED MANUSCRIPT Fig.6.shows the transconductance variation with the gate bias voltage The maximum transconductance of the device is measured from the plot is 800 mS/mm at Vgs = -1 V and the associated drain voltage is V The extracted threshold voltage of the device from the transfer characteristics shown in Fig.7 is -1.5 V AC C EP TE D M AN U SC RI PT The short channel effects (SCEs) are the major problems in nanometer regime gate length devices, the drain current variation with gate-source bias for different Vds is displayed in Fig.8 (semilog scale) A small threshold voltage (Vth) shift of proposed HEMT device result of good aspect ratio (Lg/d) maintained by recessed gate structure, where d is the distance from gate to channel From the log-scale plot, a very small 63 mV/V drain induced barrier lowering (DIBL) and 80 mV/dec subthreshold swing (SS) at Vds = V is extracted from the subthreshold characteristics shown in Fig.8 Moreover, the improved Ion/Ioff ratio of ~105 is achieved, which is important factor for high speed switching applications The gate leakage current (Ig) depends on the band gap of the barrier and channel materials The wide band gap of nm AlN spacer layer effectively suppressed the gate leakage current for such a smaller gate length device in the order of 1x10-13 A/mm displaying in Fig.9 at Vds = 2V Figure.3 Sheet charge density dependency on barrier layer thickness M AN U SC RI PT ACCEPTED MANUSCRIPT AC C EP TE D Figure.4 V-I Characteristics of Lg = 50 nm and w = 20 µm InAlN/GaN HEMT Figure.5 Breakdown characteristics of Lg = 50 nm and w = 20 µm InAlN/GaN HEMT M AN U SC RI PT ACCEPTED MANUSCRIPT AC C EP TE D Figure.6 Dependences of gm on the gate bias of Lg = 50 nm and w = 20 µm InAlN/GaN HEMT Figure.7 Dependences of Id on the gate bias of Lg = 50 nm and w = 20 µm InAlN/GaN HEMT M AN U SC RI PT ACCEPTED MANUSCRIPT AC C EP TE D Figure.8.Subthreshold characteristics of Lg = 50 nm and w = 20 µm InAlN/GaN HEMT Figure.9 Gate leakage current verses gate–source bias of Lg = 50 nm and w = 20 µm InAlN/GaN HEMT M AN U SC RI PT ACCEPTED MANUSCRIPT AC C EP TE D Figure.10 ft and fmax variation with Vgs of Lg = 50 nm and w = 20 µm InAlN/GaN HEMT Figure.11 cut-off frequency variation of InAlN/GaN HEMT for different gate length ACCEPTED MANUSCRIPT The expression for ft and fmax are as follows; Current gain Cut-off frequency: ௚೘ /௚೏ೞ Power gain cut-off frequency: ݂௠௔௫ = ௙೟ ଶ ට൫ோೞ ାோ೒ ൯௚೏ೞ ାଶగ௙೟ ோ೒ ஼೒೏ Where the source resistance ோ ௅ ோ ܴ௦ = ቀ ௪೎ቁ + ቀ ோೞ೓ ௅ಸೄ ௪ (1) RI PT భ ൰ቇା൫஼೒೏ ௚೘ /௚೏ೞ ൯ሺோೞ ାோ೏ ሻ൱ ೒೏ೞ శ൫ೃೞ శೃ೏ ൯ ଶగ൭ቆ൫஼೒ೞ ା஼೒೏ ൯ା൬ SC ݂௧ = ோ (2) ቁ and drain resistance ܴௗ = ቀ ௪೎ቁ + AC C EP TE D M AN U ቀ ೞ೓௪ ೄವቁ ܴ௖ and ܴ௦௛ are the contact resistance and channel sheet resistance respectively ‫ீܮ‬ௌ and ‫ܮ‬ௌ஽ are gate to source and gate to drain spacing respectively ‫ ݓ‬is the width of the gate ܴ௚ is the gate access resistance and ݃ௗ௦ represents drain conductance The gate to drain capacitance is ‫ܥ‬௚ௗ is an essential parameter for high-frequency operation of the device A 10 nm Al2O3 passivated device surface reduces the overall gate capacitance in our proposed device model The simulation of current gain cut-off frequency (ft) and power gain cut-off frequency (fmax) of Lg = 50 nm InAlN/GaN HEMT is depicted in Fig.10 For fixed Vds = V, the HEMT device exhibited a peak ft/fmax of 221/290 GHz at Vgs = -1 V The ft/fmax dependence of gate length (Lg) of proposed HEMT is shown in Fig.11 The obtained results are best cut-off frequencies of 50 nm gate length GaN-based HEMT with a high current density of 2.1 A/mm simultaneously maintaining VBR of 40 V and low gate leakage current among any materials so far from author’s knowledge This ft/fmax is achieved by drastic reduction in the contacts resistances (Rd and Rs), gate resistance (Rg) and parasitic capacitances (Cgs and Cgd) of the device mainly because of heavily doped (n++ GaN) source / drain regions has direct contacts with the channel, combined with drain /source access region, passivated device surface, and a T-gate structure The features of recessed T-gate structure are to minimize the Rg and enhancing the mobility by providing large gate area Moreover, the minimum short channel effects (SCEs) are achieved by good aspect ratio (Lg/d) with back-barrier ACCEPTED MANUSCRIPT Table.1 Recent Research Progress in GaN-based HEMTs for High Power RF applications 150 130 80 27 110 70 30 30 30 30 60 75 160 30 70 500 120 100 80 140 50 TE D Conclusion 0.8 1.9 1.1 1.25 1.65 1.9 1.57 2.18 1.8 2.1 0.8 1.19 1.5 1.2 1.5 2.4 1.65 1.13 1.2 2.1 VBR (V) 95 10.7 21 16 50 23.6 24 34 40 SCEs DIBL 240 mV/V DIBL 530 mV/V DIBL 63 mV/V DIBL 220 mV/V DIBL 63 mV/V, SS 80 mV/dec RI PT [24],2009 [25],2010 [26],2014 [27],2013 [28],2015 [29],2016 [10],2013 [30],2011 [13],2011 [16],2010 [31],2011 [32],2013 [33],2010 [3],2012 [34],2011 [35],2011 [36],2009 [37],2013 [38],2015 [39],2015 This work ft/fmax (GHz) 47/81 93/127 114/230 348/340 60/101 162/176 400/33 245/13 205/220 300/33 210/55 170/210 79/113.8 370/30 115/310 26.5/17 132/17.5 80/200 115/150 65/100 221/290 SC Lg in nm Idmax(A/mm) M AN U Reference AC C EP The static and dynamic characteristics of a novel 50 nm recessed T-gate InAlN/GaN HEMT with AlGaN back-barrier has been studied by using Synopsys TCAD tool The proposed device features are heavily doped (n++ GaN) source/drain regions with Al2O3 passivated device surface, which are helped to reduce the contact resistances and parasitic capacitances of the device to uplift the microwave characteristics of the HEMTs Lg of 50 nm HEMT shows a ft/fmax of 221/290 GHz The peak drain current density of 2.1 A/mm is achieved by offering effective conduction band offset by using InAlN barrier material associated with back-barrier by enhancing the sheet charge carrier density in 2DEG region 1.9Χ1013 cm-2 with higher carrier mobility of 1450 cm2/V.s A 40 V off-state breakdown voltage (VBR) is achieved by keeping the large gate to drain separation than gate to source associated with the back-barrier structure The short channel effects (SCEs) are greatly suppressed by providing good aspect ratio with the help of recessed gate This excellent DC and microwave characteristics of the proposed HEMT device makes them the most suitable candidate for future high power millimetre wave RF applications ACCEPTED MANUSCRIPT Acknowledgement The authors acknowledge the Nanoelectron Device Laboratory of Electronics and Communication Engineering 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Letters (2015) https://doi.org/10.1109/LED.2015.2474265  ... milli meter wave high power applications ACCEPTED MANUSCRIPT STATIC AND DYNAMIC CHARACTERISTICS OF Lg 50 nm InAlN/ AlN/ GaN HEMT WITH AlGaN BACK- BARRIER FOR HIGH POWER MILLIMETRE WAVE APPLICATIONS. .. MANUSCRIPT STATIC AND DYNAMIC CHARACTERISTICS OF Lg 50nm InAlN/ AlN/ GaN HEMT WITH AlGaN BACK- BARRIER FOR HIGH POWER MILLIMETRE WAVE APPLICATIONS P.Murugapandiyan1, S.Ravimaran2, J.William3 Assistant Professor,... is essential key factor for high power applications InAlN/ GaN HEMT device structure and Band gap Diagram: AC C EP TE D The vertical cross section of InAlN/ AlN/ GaN/ AlGaN HEMT device structure is