A FGT-NAND memory array was successfully designed and demonstrated using only ferroelectric- gate thin film transistors with solution-processed channel and gate insulator. A wide memory [r]
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A FGT-NAND memory array was successfully designed and demonstrated using only ferroelectric- gate thin film transistors with solution-processed channel and gate insulator. A wide memory [r]
Ngày đăng: 27/01/2021, 02:41
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