Lecture Electrical Engineering: Lecture 15 - Dr. Nasim Zafar

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Lecture Electrical Engineering: Lecture 15 - Dr. Nasim Zafar

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In this chapter, you will learn about: Transistor characteristics and parameters, the gain factors: DC Beta and DC alpha, relationship of DC Beta and DC alpha, early effect, maximum transistor ratings.

COMSATS Institute of Information Technology Virtual campus Islamabad Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 BJT­Transistor Characteristics  and Parameters: Lecture No:  15 Nasim Zafar References: Ø Microelectronic Circuits:           Adel S. Sedra and Kenneth C. Smith.  Ø Electronic Devices :   Thomas L. Floyd ( Prentice Hall ).  Ø Integrated Electronics:  Jacob Millman and Christos Halkias (McGraw­Hill) Ø Electronic Devices and Circuit Theory:    Robert Boylestad & Louis Nashelsky ( Prentice Hall ) Ø   Introductory Electronic Devices and Circuits:  Reference: Chapter 4 – Bipolar Junction Transistors: Figures are redrawn (with some modifications) from  Electronic Devices  By Thomas L. Floyd Nasim Zafar Bipolar Junction Transistors BJTs­Circuits C B E Nasim Zafar Transistor Types: v   MOS ­ Metal Oxide Semiconductor v   FET ­ Field Effect Transistor  v BJT ­ Bipolar Junction Transistor Nasim Zafar ◄ Transistor Characteristics  and  Hybrid Parameters Nasim Zafar An Overview of Bipolar Transistors: Ø Ø While control in an FET is due to an electric field.  Control in a bipolar transistor is generally considered to be due  to an electric current – current into one terminal determines the current between two others – as with an FET, a bipolar transistor can be used as a ‘control device’ Nasim Zafar Transistor Characteristics: Ø Transistor Geometry Ø Carrier motion (mobility) Ø Collector “collection efficiency” (Alpha) Ø Asymmetry: Efficiency / Breakdown voltages Ø NPN transistors are normally better than PNP since electron  mobility is better than hole mobility Nasim Zafar Transistor Biasing Configurations and Operation Modes: Nasim Zafar 10 Beta ( ) or Amplification Factor: Ø IC and IB are determined at a particular       operating point, Q­point (quiescent point).  Ø Typical values of dc range from:  30 

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Mục lục

  • Slide 1

  • BJT-Transistor Characteristics and Parameters:

  • References:

  • Reference:

  • Bipolar Junction Transistors

  • Transistor Types:

  • Slide 7

  • An Overview of Bipolar Transistors:

  • Transistor Characteristics:

  • Transistor Biasing Configurations and Operation Modes:

  • Transistor Biasing Configurations:

  • Slide 12

  • Modes of BJT Operation:

  • Modes of BJT Operation:

  • Modes of BJT Operation:

  • Slide 16

  • 1. DC-Current Gain Parameters:

  • DC Common-Emitter Current Gain :

  • DC Common-Emitter Current Gain :

  • DC Common-Base Current Gain  :

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