CdS free p type cu2znsnse4 sputtered n type inxga1−xn thin film solar cells

Journal of Electronic Materials March 2017, Volume 46, Issue 3, pp 1481–1487 CdS-Free p-Type Cu2ZnSnSe4/Sputtered n-Type InxGa1−xN Thin Film Solar Cells       Authors Authors and affiliations Wei-Liang Chen Dong-Hau KuoEmail author Thi Tran Anh Tuan Article First Online: 20 December 2016 DOI: 10.1007/s11664-016-5184-z Cite this article as: Chen, WL., Kuo, DH & Tuan, T.T.A Journal of Elec Materi (2017) 46: 1481 doi:10.1007/s11664-016-5184-z Abstract Cu2ZnSnSe4 (CZTSe) films for solar cell devices were fabricated by sputtering with a Cu–Zn–Sn metal target, followed by two-step post-selenization at 500–600°C for h in the presence of single or double compensation discs to supply Se vapor After that, two kinds of n-type IIInitride bilayers were prepared by radio frequency sputtering for CdS-free CZTSe thin film solar cell devices: In0.15Ga0.85N/GaN/CZTSe and In0.15Ga0.85N/In0.3Ga0.7N/CZTSe The p-type CZTSe and the n-type InxGa1−xN films were characterized The properties of CZTSe changed with the selenization temperature and the InxGa1−xN with its indium content With the CdS-free modeling for a solar cell structure, the In0.15Ga0.85N/In0.3Ga0.7N/CZTSe solar cell device had an improved efficiency of 4.2%, as compared with 1.1% for the conventional design with the n-type conventional ZnO/CdS bilayer Current density of ∼48 mA/cm2, the maximum open-circuit voltage of 0.34 V, and fill factor of 27.1% are reported The 3.8-fold increase in conversion efficiency for the CZTSe thin film solar cell devices by replacing n-type ZnO/CdS with the IIInitride bilayer proves that sputtered III-nitride films have their merits Keywords Cu2ZnSnSe4 InGaN thin film solar cells sputtering