CdS free p type cu2znsnse4 sputtered n type inxga1−xn thin film solar cells

... characteristics of solar cells having (a) AZO /p-type a-SiC:H and AZO/ p+ a-SiC:H /p-type a-SiC:H front interface and (b) AZO/ptype a-SiC:H and AZO/nc-Si /p-type a-SiC:H front interface Figure Dependence ... obtained only by engineering the interface between the p-type a-SiC:H and AZO and shows that a large increase in the solar cell efficiency can be...

Ngày tải lên: 20/06/2014, 20:20

... characteristics of solar cells having (a) AZO /p-type a-SiC:H and AZO/ p+ a-SiC:H /p-type a-SiC:H front interface and (b) AZO/ptype a-SiC:H and AZO/nc-Si /p-type a-SiC:H front interface Figure Dependence ... Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells Seungsin Baek*1, Jeong Chul Lee2,...

Ngày tải lên: 21/06/2014, 17:20

... extinguishes the temperature dependence of the deformation of Pam2GroPGro MLV observed in the absence of the toxin These data support the above conclusion on hampering of the deformation of Pam2Gro-PGro ... membrane the hydrophobic partitioning of CTII is favoured In the case of the P-type CTs the insertion is accomplished via the tips of three hydropho...

Ngày tải lên: 17/03/2014, 03:20

... deviation of three to four measurements In addition to measuring the formation of aspartyl phosphate, the catalytic cycle of a P-type ATPase can be characterized by determining the decay rate of the ... changes in Mg2+ ligation so that in the E1 state Mg2+ is ligated by residues in the hinge motif in the P domain and by residues in the N domain, w...

Ngày tải lên: 17/03/2014, 17:20

... modeling: upper part, the actual sensing layer; center, the approximation of cubic grains in full contact; lower part, the approximation of cubic grains partly in contact between grain size and ... sensitive p- type oxides was not available Here, we are proposing such a model and we are using it in order to extract the relevant material parameters Sensing and transduction...

Ngày tải lên: 20/03/2014, 13:04

... the potential of this oxide superlattice approach IV CONCLUSIONS Cross- plane transport in LSMO/LMO superlattices has been presented as a potential route to a p- type thermoelectric material Epitaxial ... see http://jap.aip.org/about/rights _and_ permissions 063714-6 Jha et al J Appl Phys 112, 063714 (2012) FIG (a) Measured in -plane resistivity and (b) extracted cross- pla...

Ngày tải lên: 06/05/2014, 08:53

... thermal transport properties of p- type La0.67Sr0.33MnO3/ LaMnO3 perovskite oxide metal/ semiconductor superlattices, ” J Appl Phys 112, 063714 (2012) C Aruta, M Angeloni, G Balestrino, N G Boggio, P ... al on cross- plane transport of high resistivity p- type LSMO/ LMO superlattices The high resistivity helped mitigate the effects of electrical and thermal parasitic...

Ngày tải lên: 06/05/2014, 08:53

... distribution, and reproduction in any medium, provided the original work is properly cited Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge ... epi -GaAs MOS capacitors were fabricated and characterized using electrical and physical analysis Atomic layer-deposited TiO2/Al2O3 gate...

Ngày tải lên: 20/06/2014, 20:20

... first part of this work, we report fabrication of arrays of micro test tubes and microbeakers formed on p-type Si substrate with varying pore and particle sizes For the micro test tubes, the ... the micro test tubes and microbeakers on p-Si and analyses of the results SEM imaging was performed by AJ and MR SOR and ADG concentrated on the...

Ngày tải lên: 20/06/2014, 22:20

... photo-generated carriers of intrinsic hole states in the valence band of the p-type CuO NWs The recovery of the initial state filling for the low incident fluence (< 40 μJ/cm2) suggests two relaxation ... Photoluminescence properties of sparkprocessed CuO Ceramics Int 2005, 31:411415 doi:10.1186/1556-276X-6-622 Cite this article as: Othonos and Zervos: Ultrafast hole carrier...

Ngày tải lên: 20/06/2014, 23:20

... doi:10.1186/1556-276X-6-191 Cite this article as: Khalil et al.: Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells Nanoscale Research Letters 2011 6:191 Abbreviations ... else [1] The nonlinear transport processes depicted in Figure are modeled by a set of dynamic equations relevant to current instabilities in semicon...

Ngày tải lên: 21/06/2014, 05:20

... characteristics of solar cells having (a) AZO /p-type a-SiC:H and AZO/ p+ a-SiC:H /p-type a-SiC:H front interface and (b) AZO/ptype a-SiC:H and AZO/nc-Si /p-type a-SiC:H front interface Figure Dependence of resistance ... (V) Figure 0.4 0.6 0.8 1.0 (a) *) *% " +,)% /.-)/# + "CDB@A= "CDB@A=FGE ' ) % %$% %$) %$' %$+ %$- *$% &*)%'&( " (b) *' *) " *% - " +,)% /.-)...

Ngày tải lên: 22/06/2014, 00:20

... of P-type and Mtype functions and give several quantities for homogeneous P-type and M-type functions Furthermore, we give the concepts of P-property and M-property for a couple of functions, and ... obtain some quantities for homogeneous continuous pair with P-property and M-property, respectively As an application, a bound of the solution to the homogeneous c...

Ngày tải lên: 22/06/2014, 18:20

... TRÌNH BÀY Mục tiêu, tổng quan nghiên cứu Dữ liệu – mô hình Phương pháp và kết qua Chiến lược danh mục đầu tư và ý nghĩa kinh tế Kết luận Nhóm 10 – TCDN Đêm – Khóa 20 Mục tiêu, ... thông qua danh mục tạo lập giá vào thời kỳ trước khủng hoảng (pre-GFC) khủng hoảng (GFC) 3.1 Cân giá rủi ro vỡ nợ dài hạn • Bảng 3A mẫu đầy đủ: So sánh ICDSit CDSit 173...

Ngày tải lên: 04/07/2014, 08:54

Ngày tải lên: 16/09/2015, 15:54