Tài liệu tham khảo |
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Chi tiết |
1. L. Moll and Y. Tarui, “A new solid state memory resistor,” IEEE Trans. Electron Devices, vol.10, no. 6, p. 338, Sept. 1963 |
Sách, tạp chí |
Tiêu đề: |
A new solid state memory resistor |
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2. J.T. Evans and R. Womack, “An experimental 512-bit nonvolatile memory with ferroelectric storage cell,” IEEE J. Solid-State Circuits, vol. 23, no. 5, pp.1171–1175, Oct. 1998 |
Sách, tạp chí |
Tiêu đề: |
An experimental 512-bit nonvolatile memory with ferroelectricstorage cell |
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3. A. Sheikholeslami and P. Gulak, “A survey of circuit innovations in ferroelectric random- access memories,” Proc. IEEE, vol. 88, no. 5, pp.667–789, May 2000 |
Sách, tạp chí |
Tiêu đề: |
A survey of circuit innovations in ferroelectric random-access memories |
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4. J. F. Scott, “Ferroelectric Memories,” Advanced Microelectronics, Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co.KG, 2000 |
Sách, tạp chí |
Tiêu đề: |
Ferroelectric Memories |
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5. H. Ishiwara, M. Okuyama, and Y. Arimoto (Eds,) “Ferroelectric random access memories,”Fundamentals and applications, Topics in applied physics, vol. 93, Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, 2004 |
Sách, tạp chí |
Tiêu đề: |
Ferroelectric random access memories |
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9. A. Onodera, S. Mouri, M. Fukunaga, S. Hiramatsu, M. Takesada, and H. Yamashita, “Phase transition in Bi-layered oxides with five perovskite layers,” Jpn. J. Appl. Phys., vol. 45, no.12, pp. 9125–9128, Dec. 2006 |
Sách, tạp chí |
Tiêu đề: |
Phasetransition in Bi-layered oxides with five perovskite layers |
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10. H. Yamashita, K. Yoshio, W. Murata, and A. Onodera, “Structural changes and ferroelectricity in Bi-layered SrBi2Ta2O9,” Jpn. J. Appl. Phys., vol. 41, pt. 1, no. 11B, pp. 7076–7079, 2002 |
Sách, tạp chí |
Tiêu đề: |
Structural changes and ferroelectricityin Bi-layered SrBi2Ta2O9 |
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11. M.G. Stachiotti, C.O. Rodriguez, C. Ambrosch-Draxl, N. E. Christensen, “Electronic struc- ture and ferroelectricity in SrBi2Ta2O9,” Phys. Rev., B61, 14434, 2000. (http://prola.aps.org/abstract/PRB/v61/i21/p14434 1) |
Sách, tạp chí |
Tiêu đề: |
Electronic struc-ture and ferroelectricity in SrBi2Ta2O9 |
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12. E. C. Subbarao, “Ferroelectricity in Bi4Ti3O12 and its solid solutions,” Phys. Rev., vol. 122, no. 3, pp. 804–807, 1961. (http://prola.aps.org/abstract/PR/v122/i3/p804 1) |
Sách, tạp chí |
Tiêu đề: |
Ferroelectricity in Bi4Ti3O12 and its solid solutions |
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13. Ying-Hao Chu, Qian Zhan, L. W. Martin, M. P. Cruz, Pei-Ling Yang, G. W. Pabst, F. Zavaliche, Seung-Yeul Yang, Jing-Xian Zhang, Long-Qing Chen, D. G. Schlom, I.-Nan Lin,Tai-Bor Wu, and R. Ramesh, “Nanoscale domain control in multiferroic BiFeO 3 thin films,” Adv. Mater., vol. 18, pp. 2307–2311, 2006. Fig. 1(a):Copyright Wiley-VCH Verlag GmbH & Co. KGaA. Reproduced with permission |
Sách, tạp chí |
Tiêu đề: |
Nanoscale domain control in multiferroic BiFeO3 thinfilms |
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15. Y. Hosono and Y. Yamashita, “High-efficiency piezoelectric single crystals”, Toshiba review, vol. 59, no. 10, pp.39–42, 2004 : Japanese language |
Sách, tạp chí |
Tiêu đề: |
High-efficiency piezoelectric single crystals |
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18. A. Sheikholeslami, P.G. Gulak, H. Takauchi, H. Tamura, H. Yoshioka, and T.Tamura,“A pulse-based, parallel-element macromodel for ferroelectric capacitors,” IEEE Trans.Ultrasonics, Ferroelectrics and Frequency Control, vol. 47, no. 4, pp. 784–791, Jul.2000 |
Sách, tạp chí |
Tiêu đề: |
A pulse-based, parallel-element macromodel for ferroelectric capacitors |
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19. J. Chow, A. Sheikholeslami, J. S. Cross, and S. Masui, “A voltage-dependent switching-time (VDST) model of ferroelectric capacitors for low-voltage FeRAM circuits,” Digest of Tech- nical Papers, Symp. VLSI Circuits, pp. 448–449, Jun. 2004 |
Sách, tạp chí |
Tiêu đề: |
A voltage-dependent switching-time(VDST) model of ferroelectric capacitors for low-voltage FeRAM circuits |
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20. A. Gruverman, B. J. Rodriguez, C. Dehoff, J. D. Waldrep, A. I. Kingon, and R. J. Nemanich,“Direct studies of domain switching dynamics in thin film ferroelectric capacitors,” Appl.Phys. Lett., vol. 87, 082902, 2005 |
Sách, tạp chí |
Tiêu đề: |
Direct studies of domain switching dynamics in thin film ferroelectric capacitors |
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21. S. Kawashima, I. Fukushi, K. Morita, K. Nakabayashi, M. Nakazawa, K.Yamane, T. Hirayama, and T. Endo, “A reliable 1T1C FeRAM using a thermal history tracking 2T2C dual reference level technique for a smart card application chip,” IEICE Trans. Electron., vol.E90-C, no. 10, pp. 1941–1948, Oct. 2007 |
Sách, tạp chí |
Tiêu đề: |
A reliable 1T1C FeRAM using a thermal history tracking 2T2Cdual reference level technique for a smart card application chip |
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22. F. Chu, G. Fox, and T. Davenport, “Scaled PLZT thin film capacitors with excellent endurance and retention performance,” Proc. MRS, Ferroelectric Thin Films IX, Symposium CC , vol.655, CC1.2, 2001 |
Sách, tạp chí |
Tiêu đề: |
Scaled PLZT thin film capacitors with excellent enduranceand retention performance |
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23. Y. Shimada, A. Inoue, T. Nasu, Y. Nagano, A. Matsuda, K. Arita, Y. Uemoto, E. Fujii, and T. Otsuki, “Time-dependent leakage current behavior of integrated Ba 0.7 Sr 0.3 TiO 3 thin film capacitors during stressing,” Jpn. J. Appl. Phys., vol. 35, pt. 1, no. 9B, pp. 4919–4924, Sep.1996 |
Sách, tạp chí |
Tiêu đề: |
Time-dependent leakage current behavior of integrated Ba0.7Sr0.3TiO3thin filmcapacitors during stressing |
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7. S. Kimura http://sunbeam.spring8.or.jp/top/seika/ohp/2001/nec.pdf : Japanese language 8. http://www.murata.co.jp/izumomurata/trend/index4.html Japanese language |
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51. HM71V832(32 K x8) data sheet, Hitach(1995):http://www.datasheetarchive.com/H-195.htm52. MB85RS256(SPI256K) data sheet, Fujitsu(2005): http://edevice.fujitsu.com/fj/DATASHEET/e-ds/e513105.pdf |
Link |
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55. H. Takasu, FED Review, vol. 2, no. 7, pp. 1–24, Feb. 2003 ; Japanese language. Also in SS.10, H. Ishiwara, T.Fuchigami et al ‘Recent progress in ferroelectric memories,’ CMC publishing ISBN4-88231-819-9 (Feb.2004) http://www.cmcbooks.co.jp/books/b0712.php; Japanese lan- guage |
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