OPTOELECTRONICS – DEVICES AND APPLICATIONS pptx

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OPTOELECTRONICS DEVICES AND APPLICATIONS Edited by Padmanabhan Predeep Optoelectronics Devices and Applications Edited by Padmanabhan Predeep Published by InTech Janeza Trdine 9, 51000 Rijeka, Croatia Copyright © 2011 InTech All chapters are Open Access articles distributed under the Creative Commons Non Commercial Share Alike Attribution 3.0 license, which permits to copy, distribute, transmit, and adapt the work in any medium, so long as the original work is properly cited. After this work has been published by InTech, authors have the right to republish it, in whole or part, in any publication of which they are the author, and to make other personal use of the work. Any republication, referencing or personal use of the work must explicitly identify the original source. Statements and opinions expressed in the chapters are these of the individual contributors and not necessarily those of the editors or publisher. No responsibility is accepted for the accuracy of information contained in the published articles. The publisher assumes no responsibility for any damage or injury to persons or property arising out of the use of any materials, instructions, methods or ideas contained in the book. Publishing Process Manager Mirna Cvijic Technical Editor Teodora Smiljanic Cover Designer Jan Hyrat Image Copyright john austin, 2010. Used under license from Shutterstock.com First published September, 2011 Printed in Croatia A free online edition of this book is available at www.intechopen.com Additional hard copies can be obtained from orders@intechweb.org Optoelectronics Devices and Applications, Edited by Padmanabhan Predeep p. cm. ISBN 978-953-307-576-1 free online editions of InTech Books and Journals can be found at www.intechopen.com Contents Preface IX Part 1 Optoelectronic Devices 1 Chapter 1 Organic Light Emitting Diodes: Device Physics and Effect of Ambience on Performance Parameters 3 T.A. Shahul Hameed, P. Predeep, M.R. Baiju Chapter 2 Integrating Micro-Photonic Systems and MOEMS into Standard Silicon CMOS Integrated Circuitry 23 Lukas W. Snyman Chapter 3 SPSLs and Dilute-Nitride Optoelectronic Devices 51 Y Seyed Jalili Chapter 4 Optoelectronic Plethysmography for Measuring Rib Cage Distortion 79 Giulia Innocenti Bruni, Francesco Gigliotti and Giorgio Scano Chapter 5 Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth 95 Tadao Hashimoto and Edward Letts Chapter 6 Computational Design of A New Class of Si-Based Optoelectronic Material 107 Meichun Huang Part 2 Optoelectronic Sensors 129 Chapter 7 Coupling MEA Recordings and Optical Stimulation: New Optoelectronic Biosensors 131 Diego Ghezzi VI Contents Chapter 8 Detection of Optical Radiation in NO x Optoelectronic Sensors Employing Cavity Enhanced Absorption Spectroscopy 147 Jacek Wojtas Chapter 9 Use of Optoelectronics to Measure Biosignals Concurrently During Functional Magnetic Resonance Imaging of the Brain 173 Bradley J MacIntosh, Fred Tam and Simon J Graham Chapter 10 Applications and Optoelectronic Methods of Detection of Ammonia 189 Paul Chambers, William B. Lyons, Tong Sun and Kenneth T.V. Grattan Chapter 11 Optical-Fiber Measurement Systems for Medical Applications 205 Sergio Silvestri and Emiliano Schena Part 3 Lasers in Optoelectronics 225 Chapter 12 The Vertical-Cavity Surface Emitting Laser (VCSEL) and Electrical Access Contribution 227 Angelique Rissons and Jean-Claude Mollier Chapter 13 Effects of Quantum-Well Base Geometry on Optoelectronic Characteristics of Transistor Laser 255 Iman Taghavi and Hassan Kaatuzian Chapter 14 Intersubband and Interband Absorptions in Near-Surface Quantum Wells Under Intense Laser Field 275 Nicoleta Eseanu Chapter 15 Using the Liquid Crystal Spatial Light Modulators for Control of Coherence and Polarization of Optical Beams 307 Andrey S. Ostrovsky, Carolina Rickenstorff-Parrao and Miguel Á. Olvera-Santamaría Chapter 16 Recent Developments in High Power Semiconductor Diode Lasers 325 Li Zhong and Xiaoyu Ma Part 4 Optical Switching Devices 349 Chapter 17 Energy Efficient Semiconductor Optical Switch 351 Liping Sun and Michel Savoie Contents VII Chapter 18 On Fault-Tolerance and Bandwidth Consumption Within Fiber-Optic Media Networks 369 Roman Messmer and Jörg Keller Chapter 19 Integrated ASIC System and CMOS-MEMS Thermally Actuated Optoelectronic Switch Array for Communication Network 373 Jian-Chiun Liou Part 5 Signals and Fields in Optoelectronic Devices 393 Chapter 20 Low Frequency Noise as a Tool for OCDs Reliability Screening 395 Qiuzhan Zhou, Jian Gao and Dan’e Wu Chapter 21 Electromechanical Fields in Quantum Heterostructures and Superlattices 409 Lars Duggen and Morten Willatzen Chapter 22 Optical Transmission Systems Using Polymeric Fibers 435 U. H. P. Fischer, M. Haupt and M. Joncic Chapter 23 Transfer Over of Nonequilibrium Radiation in Flames and High-Temperature Mediums 459 Nikolay Moskalenko, Almaz Zaripov, Nikolay Loktev, Sergei Parzhin and Rustam Zagidullin Chapter 24 Photopolarization Effect and Photoelectric Phenomena in Layered GaAs Semiconductors 517 Yuo-Hsien Shiau Chapter 25 Optoelectronics in Suppression Noise of Light 531 Jiangrui Gao, Kui Liu, Shuzhen Cui and Junxiang Zhang Chapter 26 Anomalous Transient Photocurrent 543 Laigui Hu and Kunio Awaga Part 6 Nanophotonics 563 Chapter 27 Nanophotonics for 21 st Century 565 S. K. Ghoshal, M. R. Sahar, M. S. Rohani and Sunita Sharma To my father; but for his unrelenting efforts I would not have made it to this day. Preface Optoelectronics - Devices and Applications is the second part of an edited anthology on the multifaceted areas of optoelectronics by a selected group of authors including promising novices to experts in the field, where are discussed design and fabrication of device structures and the underlying phenomena. Many of the optoelectronic and photonic effects are integrated into a vast array of devices and applications in numerous combinations, and more are in fast development. New branches of optoelectronics continues to sprout up such as military optoelectronics, medical optoelectronics etc. The field of optoelectronics and photonics was originally aimed at applying light to tasks that could previously only be solved through electronics, such as in data transfer technology. Optoelectronics, being graduated to photonics seeks to continue this endeavor and to expand upon it by searching for applications for light. At any rate the optics related electronic and photonic phenomena, where the closely connected players like electrons and photons, often refuse to be demarcated into water tight compartments. With applications touching everyday life and consumer electronic gadgets, optoelectronics is emerging as a popular technology and draws from and contributes to several other fields, such as quantum electronics and modern optics. There are many aspects of light and its behavior that are important to those studying electronics for scientific or industrial purposes. Light sensing is particularly important in photonics, as the light involved in experiments and tests often needs to be quantified and may not even be visible and electrons invariably helps in this. The role of lasers in increasing the quality of life in modern times is unique. It is a lifesaving source of light that enormously helped in medicine as in military technology and even in entertainment, data storage, and holography. The wide range of such applications in the field of optoelectronics and photonics ensures that it is generally a well-funded and thriving area of scientific research and upcoming researchers are sure to find it extremely encouraging. In the global energy front also optics and photonics hold the hope of harnessing light to provide safe energy and power especially in the light of the hidden dangers of nuclear power as an alternative. I am sure that this collection of articles by experts from the field would help them enormously to understand the underlying principles, design and fabrication philosophy behind this wonderful technology. The first part of this set presents recent X Preface trends in the development of materials and techniques in optoelectronics and the readers are suggested to have a look into that as well in the InTech websites. July 2011 P. Predeep Professor Laboratory for Unconventional Electronics & Photonics Department of Physics National Institute of Technology Calicut India [...]... transport 4 Optoelectronics Devices and Applications layer Poly-(3,4-ethyhylene dioxythiophene):poly-(styrenesulphonate) (PEDOT:PSS) Indium Tin Oxide (ITO) and aluminium are the anode and cathode respectively Charge injection, transport and recombination (I.H.Campbell et al,1996) occur in the light emitting conductive layer of organic light emitting diodes and its features influence efficiency and color... electrode/polymer interface (fig.4) 8 Optoelectronics Devices and Applications Fig 4 Thickness Dependence of the I-V Characteristics in ITO/MEH-PPV/Ca Device (I.D.Parker,1994) Fig 5 Field v Current Dependence for ITO/MEH-PPV/Ca Device ((I.D.Parker,1994) For a clear understanding of the device physics and models, it is customary to fabricate single carrier and dual carrier devices On replacing Ca, having... single carrier and dual carrier devices, paved the way to the better understanding of mobility of electrons and holes Electron only devices are fabricated by a PPV layer sandwiched between two Ca electrodes whereas hole only devices with an evaporated Au on top For hole only devices, current density depends quadratically on voltage J 9 V2  o r  p 3 8 L (9) where  p is hole mobility and L is the... explains the turn on phenomena of the device Figures 10 and 11 show the J-V characteristics of devices A, B, C and D respectively at a temperature varying from very low value of 100K to room temperature The devices A and B are having MEH:PPV as the emissive layer and their J-V characteristics are shown in figure 10a and 10b respectively The devices C and D in which the emissive material is small molecule... were also 6 Optoelectronics Devices and Applications made by the group on J-V and luminance characteristics of ITO/TPD/AlQ/Ca hetero junction devices for different organic layer thickness The thickness dependence of current at room temperature leads to the inference that the electron current in Alq device is predominantly space charge limited with a field dependent charge carrier mobility and that trapping... conservation equation has been rewritten as dJ h , e( x )   A(  h   e )E( x )nh ( x )ne ( x ) dx where + and signs indicate electron and hole currents By conservation law of the total current J h ( x )  J e( x )  eE( x )nh ( x ) h  eE( x )ne ( x ) e  J 0 , (12) (13) 12 Optoelectronics Devices and Applications with the boundary conditions given by current injection at both electrodes (Y.Kawabe et... methods and simulations, thermionic injection ( G.G Malliaras ,1998) is said to best suit for explaining the injection in organic diodes 10 Optoelectronics Devices and Applications Fig 7 Device Efficiency v (Barrier Height)3/2 [I.D.Parker,1994) There are remarkable efforts (P.W.M.Blom & Marc J.M,1998) in characterization and modeling of polymer light emitting diodes Their experiments on PPV devices, ... 18 Optoelectronics Devices and Applications No doubt, the degradation due to moisture poses threat in lifetime and performance and this problem is worse in devices having flexible substrates since they are more permeable to moisture and oxygen to which organic materials are sensitive too The first systematic study in this respect was from Burrows et al (P.E.Burrows et al,1994) and they had proposed... al,1999) are assumed to have links with the leakage paths 20 Optoelectronics Devices and Applications 6 References Amare Benor, Shin-ya Takizawa, C Pérez-Bolivar, and Pavel Anzenbacher(2010), Energy barrier, charge carrier balance, and performance improvement in organic light-emitting diodes,Applied Physics Letters 96, 243310 C W Tang, S A VanSlyke, and C H Chen (1989) Electroluminescence of doped organic... amorphous charge transfer complexes of trinitrofluorenone and poly-n-vinylcarbazole, Journal of Applied Physics 43, 5033 Wolfgang Brutting, Stefan Berleb and Anton G.Muckl (2001) Device physics of organic lightemitting diodes based on molecular materials, Organic Electronics 2, 1-36 22 Optoelectronics Devices and Applications Y Cao, G Yu, C Zhang, R Menon, and A.J Heeger(1997), Polymer light emitting diodes . OPTOELECTRONICS – DEVICES AND APPLICATIONS Edited by Padmanabhan Predeep Optoelectronics – Devices and Applications Edited by Padmanabhan. transport Optoelectronics – Devices and Applications 4 layer Poly-(3,4-ethyhylene dioxythiophene):poly-(styrenesulphonate) (PEDOT:PSS). Indium Tin Oxide (ITO) and aluminium are the anode and cathode. observations were also Optoelectronics – Devices and Applications 6 made by the group on J-V and luminance characteristics of ITO/TPD/AlQ/Ca hetero junction devices for different organic

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  • 00 Preface

  • 00a part 1

  • 01 Organic Light Emitting Diodes: Device Physics and Effect of Ambience on Performance Parameters

  • 02 Integrating Micro-Photonic Systems and MOEMS into Standard Silicon CMOS Integrated Circuitry

  • 03 SPSLs and Dilute-Nitride Optoelectronic Devices

  • 04 Optoelectronic Plethysmography for Measuring Rib Cage Distortion

  • 05 Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth

  • 06 Computational Design of A New Class of Si-Based Optoelectronic Material

  • 06a part 2

  • 07 Coupling MEA Recordings and Optical Stimulation: New Optoelectronic Biosensors

  • 08 Detection of Optical Radiation in NOx Optoelectronic Sensors Employing Cavity Enhanced Absorption Spectroscopy

  • 09 Use of Optoelectronics to Measure Biosignals Concurrently During Functional Magnetic Resonance Imaging of the Brain

  • 10 Applications and Optoelectronic Methods of Detection of Ammonia

  • 11 Optical-Fiber Measurement Systems for Medical Applications

  • 11a part 3

  • 12 The Vertical-Cavity Surface Emitting Laser (VCSEL) and Electrical Access Contribution

  • 13 Effects of Quantum-Well Base Geometry on Optoelectronic Characteristics of Transistor Laser

  • 14 Intersubband and Interband Absorptions in Near-Surface Quantum Wells Under Intense Laser Field

  • 15 Using the Liquid Crystal Spatial Light Modulators for Control of Coherence and Polarization of Optical Beams

  • 16 Recent Developments in High Power Semiconductor Diode Lasers

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