Electron scattering from roughness-induced fluctuations in the donor density in ZnO surface quantum wells Quang D.N., Tuan L., Tien N.T Center for Theoretical Physics, Vietnamese Academy of Science and Technology, 10 Dao Tan Street, Hanoi, Viet Nam; Institute of Engineering Physics, Hanoi University of Technology, Dai Co Viet Road, Hanoi, Viet Nam; College of Science, Can Tho University, 3-2 Road, Can Tho City, Viet Nam Abstract: We present the theory of an ad hoc mechanism for electron scattering in heavily-doped zinc oxide (ZnO) surface quantum wells (SFQWs) We show that the carriers must be extra scattered in the in-plane from roughness-induced fluctuations in the donor density In combination with the normal scattering from roughness-induced fluctuations in the potential barrier position, this gives rise to an effective roughnessrelated process, referred to as combined surface roughness (CSR) scattering The CSR scattering is determined by both the roughness and doping profiles The fluctuating donor density dominates CSR scattering at small angles and is important for large correlation length The electron mobility in heavilydoped ZnO SFQWs is ruled by CSR scattering This enables a successful explanation of the mobility data of accumulation layers near the ZnO surface at extremely high electron densities, which has not been explained so far © 2010 American Institute of Physics Index Keywords: Accumulation layers; Combined surface; Correlation lengths; Donor density; Doped ZnO; Doping profiles; High-electron-density; In-plane; Potential barriers; Quantum well; ZnO; ZnO surface; Doping (additives); Electron energy loss spectroscopy; Electron mobility; Electron scattering; Electrons; Semiconductor quantum wells; Surface roughness; Zinc; Zinc oxide Year: 2010 Source title: Journal of Applied Physics Volume: 107 Issue: 12 Art No.: 123709 Link: Scorpus Link Correspondence Address: Quang, D N.; Center for Theoretical Physics, Vietnamese Academy of Science and Technology, 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D.N., Tung, N.H., Tuoc, V.N., Minh, N.V., Huy, H.A., Hien, D.T., Quantum and transport lifetimes due to roughness- induced scattering of a two-dimensional electron gas in wurtzite group-III-nitride... Makino, T., Segawa, Y., Tsukazaki, A., Ohtomo, A., Kawasaki, M., Electron transport in ZnO thin films (2005) Applied Physics Letters, 87 (2), pp 1-3 , DOI 10.1063/1.1991994, 022101 14 Makino,... Ellmer, K., Mientus, R., Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide (2008) Thin Solid Films, 516 (14), pp 4620-4627 ,